Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2005
01/25/2005US6847572 Refresh control circuit and methods of operation and control of the refresh control circuit
01/25/2005US6847571 Use of redundant memory cells to manufacture cost efficient drams with reduced self refresh current capability
01/25/2005US6847570 Semiconductor memory having burst transfer function and internal refresh function
01/25/2005US6847568 Sense amplifier configuration for a semiconductor memory device
01/25/2005US6847567 Sense amplifier drive circuits responsive to predecoded column addresses and methods for operating the same
01/25/2005US6847566 Method and circuit configuration for multiple charge recycling during refresh operations in a DRAM device
01/25/2005US6847564 Semiconductor memory device capable of relieving defective cell
01/25/2005US6847563 Semiconductor storage device and method for remedying defects of memory cells
01/25/2005US6847562 Enhanced read and write methods for negative differential resistance (NDR) based memory device
01/25/2005US6847560 Method and circuit for generating constant slew rate output signal
01/25/2005US6847559 Input buffer circuit of a synchronous semiconductor memory device
01/25/2005US6847555 Non-volatile semiconductor memory device reading and writing multi-value data from and into pair-cells
01/25/2005US6847553 Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
01/25/2005US6847550 Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor
01/25/2005US6847549 Clock synchronized non-volatile memory device
01/25/2005US6847548 Memory with multiple state cells and sensing method
01/25/2005US6847547 Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
01/25/2005US6847545 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
01/25/2005US6847544 Magnetic memory which detects changes between first and second resistive states of memory cell
01/25/2005US6847542 SRAM cell and integrated memory circuit using the same
01/25/2005US6847540 Semiconductor memory device and control method thereof
01/25/2005US6847539 Ferroelectric memory and method of reading data in the same
01/25/2005US6847538 Double operation speed in DRAM with new memory cell configuration
01/25/2005US6847537 Ferroelectric memory devices having a plate line control circuit and methods for operating the same
01/25/2005US6847252 Semiconductor integrated circuit device
01/25/2005US6847072 Low switching field magnetic element
01/25/2005US6847047 Methods that facilitate control of memory arrays utilizing zener diode-like devices
01/25/2005US6846703 Three-dimensional device
01/25/2005US6846683 Method of forming surface-smoothing layer for semiconductor devices with magnetic material layers
01/25/2005CA2294834C Electrically addressable passive device, method for electrical addressing of the same and uses of the device and the method
01/25/2005CA2124355C Nonvolative random access memory device
01/20/2005WO2005006376A2 Electronic device with aperture and wide lens for small emission spot size
01/20/2005WO2005006344A1 Booster circuit
01/20/2005WO2005006341A1 Method and apparatus for partial refreshing of drams
01/20/2005WO2005006340A2 Sram cell structure and circuits
01/20/2005WO2005006339A2 A scalable flash eeprom memory cell with notched floating gate and graded source region, and method of manufacturing the same
01/20/2005WO2005006338A2 Magnetoelectronics information device having a compound magnetic free layer
01/20/2005WO2005006337A2 Variable gate bias for a reference transistor in a non-volatile memory
01/20/2005WO2004105039A3 STACKED 1T-nMEMORY CELL STRUCTURE
01/20/2005US20050015640 System and method for journal recovery for multinode environments
01/20/2005US20050015560 Method and device for masking ringing in a DDR SDRAM
01/20/2005US20050014325 Point contact array, not circuit, and electronic circuit comprising the same
01/20/2005US20050014297 Methods of forming magnetoresistive memory devices and assemblies
01/20/2005US20050013186 Flash/dynamic random access memory field programmable gate array
01/20/2005US20050013185 Dynamic random access memory with smart refresh scheduler
01/20/2005US20050013184 Dual loop sensing scheme for resistive memory elements
01/20/2005US20050013182 Systems and methods for sensing a memory element
01/20/2005US20050013180 Memory circuit, display device and electronic equipment each comprising the same
01/20/2005US20050013178 Synchronous semiconductor memory device having stable data output timing
01/20/2005US20050013176 Circuit and method of generating a boosted voltage
01/20/2005US20050013175 Semiconductor memory device having over-driving scheme
01/20/2005US20050013174 System of multiplexed data lines in a dynamic random access memory
01/20/2005US20050013173 Programming of a memory with discrete charge storage elements
01/20/2005US20050013172 Multiple modes of operation in a cross point array
01/20/2005US20050013171 Methods of increasing the reliability of a flash memory
01/20/2005US20050013169 Nonvolatile semiconductor memory device
01/20/2005US20050013167 Non-volatile multi-level, semiconductor flash memory device and method of driving same
01/20/2005US20050013165 Flash memories with adaptive reference voltages
01/20/2005US20050013164 Nonvolatile memory and method of driving the same
01/20/2005US20050013163 Semiconductor memory cell, array, architecture and device, and method of operating same
01/20/2005US20050013161 Ferroelectric memory and method of manufacturing the same
01/20/2005US20050013160 Semiconductor memory device
01/20/2005US20050013159 Semiconductor integrated circuit device
01/20/2005US20050013157 Methods of reading junction-isolated depletion mode ferroelectric memory devices
01/20/2005US20050013156 Semiconductor integrated circuit device having ferroelectric capacitor
01/20/2005US20050013155 Method and apparatus of IC implementation based on C++ language description
01/20/2005US20050012494 Power supply voltage lowering circuit used in semiconductor device
01/20/2005US20050012162 Semiconductor storage device
01/20/2005US20050012161 Semiconductor memory device
01/20/2005US20050012157 Semiconductor device having sufficient process margin and method of forming same
01/20/2005US20050012140 EEPROM device having selecting transistors and method of fabricating the same
01/20/2005US20050012130 6F2 3-Transistor DRAM gain cell
01/20/2005US20050012129 Magnetic switching element and a magnetic memory
01/20/2005US20050012127 Via AP switching
01/20/2005US20050012086 Programmable resistance memory element and method for making same
01/20/2005US20050012045 Detector for alpha particle or cosmic ray
01/20/2005DE10325757A1 Verfahren zur Herstellung von magnetischen Halbleitern mit günstigen ferromagnetischen Eigenschaften A process for producing magnetic semiconductors ferromagnetic properties with favorable
01/20/2005DE102004029846A1 Integrated circuit memory device, has column select IO blocks and N-type sense amplifier blocks arranged in zig-zag layout pattern that spans two rows of zeroth sense amplifier region
01/20/2005CA2529667A1 Sram cell structure and circuits
01/19/2005EP1498952A2 Oxygen content system and method for controlling memory resistance properties
01/19/2005EP1498904A1 Magnetic memory cell
01/19/2005EP1498903A2 High speed data access memory arrays
01/19/2005EP1497733A1 Destructive-read random access memory system buffered with destructive-read memory cache
01/19/2005EP1497730A1 Methods for storing data in non-volatile memories
01/19/2005CN1568525A Semiconductor storage device
01/19/2005CN1568524A Semiconductor memory having mutually crossing word and bit lines, at which magnetoresistive memory cells are arranged
01/19/2005CN1568523A Sense amplifier and architecture for open digit arrays
01/19/2005CN1568521A Adjustable memory self-timing circuit
01/19/2005CN1567478A Apparatus for generating refresh clock changed with capacitance of memory capacitor and method thereof
01/19/2005CN1567477A SRAM interface compatible delayed reading/storing mode of DRAM
01/19/2005CN1567475A Memory element with built-in error connecting function
01/19/2005CN1185714C Semiconductor memory and its preparing process
01/19/2005CN1185711C Semiconductor storage device
01/19/2005CN1185630C Magnetic memory device
01/19/2005CN1185580C Semiconductor integrated circuit and data processing system
01/18/2005US6845459 System and method to provide tight locking for DLL and PLL with large range, and dynamic tracking of PVT variations using interleaved delay lines
01/18/2005US6845458 System and method of operation of DLL and PLL to provide tight locking with large range, and dynamic tracking of PVT variations using interleaved delay lines
01/18/2005US6845438 Method for controlling non-volatile semiconductor memory system by using look up table
01/18/2005US6845433 Memory device having posted write per command
01/18/2005US6845429 Multi-port cache memory