Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2005
03/03/2005US20050047260 Semiconductor integrated circuit
03/03/2005US20050047246 Semiconductor memory device and module for high frequency operation
03/03/2005US20050047241 Magnetic random access memory designs with controlled magnetic switching mechanism
03/03/2005US20050047240 Semiconductor memory device
03/03/2005US20050047239 Semiconductor storage device and refresh control method thereof
03/03/2005US20050047237 Data write circuit in memory system and data write method
03/03/2005US20050047235 Semiconductor memory device using VSS or VDD bit line precharge approach without reference cell
03/03/2005US20050047233 Voltage keeping scheme for low-leakage memory devices
03/03/2005US20050047232 Semiconductor integrated circuit device
03/03/2005US20050047231 Memory controller and image forming device provided with the same
03/03/2005US20050047223 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
03/03/2005US20050047222 Data signal reception latch control using clock aligned relative to strobe signal
03/03/2005US20050047220 Semiconductor memory device
03/03/2005US20050047219 Memory with reference-initiated sequential sensing
03/03/2005US20050047218 Multi-port memory architecture
03/03/2005US20050047217 Semiconductor memory device for storing multivalued data
03/03/2005US20050047216 Non-volatile semiconductor memory device and electric device with the same
03/03/2005US20050047206 Magnetic memory with write inhibit selection and the writing method for same
03/03/2005US20050047205 MRAM having current peak suppressing circuit
03/03/2005US20050047204 Ferromagnetic layer compositions and structures for spin polarized memory device
03/03/2005US20050047203 Semiconductor storage device
03/03/2005US20050047202 Magnetic random access memory having test circuit and test method therefor
03/03/2005US20050047201 Method and system reading magnetic memory
03/03/2005US20050047200 Method and system for controlling write current in magnetic memory
03/03/2005US20050047199 Method and apparatus of coupling conductors in magnetic memory
03/03/2005US20050047198 Method of writing to a multi-state magnetic random access memory cell
03/03/2005US20050047197 Semiconductor memory device including 4TSRAMs
03/03/2005US20050047196 Loadless NMOS four transistor dynamic dual Vt SRAM cell
03/03/2005US20050047194 Non-volatile dynamic random access memory
03/03/2005US20050047192 Semiconductor integrated circuit
03/03/2005US20050047191 Memory cell and semiconductor memory device
03/03/2005US20050047190 FeRAM having test circuit and method for testing the same
03/03/2005US20050047189 Reliable ferro fuse cell
03/03/2005US20050047188 Ferroelectric memory device
03/03/2005US20050046687 Web printing system
03/03/2005US20050046674 Inkjet printhead chip that incorporates micro-mechanical lever mechanisms
03/03/2005US20050046472 Data driving circuit and semiconductor memory device having the same
03/03/2005US20050046465 High voltage supply circuit and a method of supplying high voltage
03/03/2005US20050046455 DLL circuit
03/03/2005US20050045971 Magnetic memory with self-aligned magnetic keeper structure
03/03/2005US20050045953 Semiconductor device
03/03/2005US20050045931 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
03/03/2005US20050045930 Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric
03/03/2005US20050045929 Magnetoresistive random access memory with reduced switching field variation
03/03/2005US20050045919 Semiconductor device
03/03/2005US20050045913 Magnetic memory element utilizing spin transfer switching and storing multiple bits
03/03/2005US20050045877 Photosensitive polymeric memory elements
03/03/2005DE19723432B4 Halbleiterspeicher-Bauelement mit Bänken A semiconductor memory device with benches
03/03/2005DE19503988B4 Halbleiterspeichervorrichtung A semiconductor memory device
03/03/2005DE10334125A1 Semiconductor memory has memory cells wordlines and bitlines with a device to dynamically alter the electrical active length of the bitlines
03/03/2005DE10333280A1 Halbleiter-Speicherbauelement, und Verfahren zum Betrieb eines Halbleiter-Speicherbauelements A semiconductor memory device, and method for operating a semiconductor memory device
03/03/2005DE102004034822A1 MRAM und Verfahren zu dessen Herstellung MRAM and methods for its preparation
03/03/2005DE102004011741A1 Halbleiterspeicherschaltung und zugehöriger Halbleiterspeicherbaustein A semiconductor memory circuit and related semiconductor memory device
03/03/2005CA2535965A1 High speed low power magnetic devices based current induced spin-momentum transfer
03/02/2005EP1511085A2 Asymmetric crystalline structure memory cell
03/02/2005EP1511041A2 Magnetoresistive element, magnetic memory cell, and magnetic memory device, and method for manufacturing the same
03/02/2005EP1509952A2 Variable capacitances for memory cells within a cell group
03/02/2005EP1509923A1 Ferroelectric memory integrated circuit with improved reliability and density
03/02/2005EP1509922A1 Mram-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference
03/02/2005EP1402329A4 Low latency multi-level communication interface
03/02/2005CN1589480A Variable level memory
03/02/2005CN1589479A 铁电或驻极体存储电路 Ferroelectric or electret memory circuit
03/02/2005CN1589478A Magnetoresistance random access memory for improved scalability
03/02/2005CN1589477A A matrix-addressable optoelectronic apparatus and electrode means in the same
03/02/2005CN1589448A System and method for implementing journaling in a multi-node environment
03/02/2005CN1589447A System and method for a multi-node environment with shared storage
03/02/2005CN1588664A Characterization emthod for convertable phase change material electric property
03/02/2005CN1588637A Process for preparing nano electronic phase change storage
03/02/2005CN1588613A Process for preparing nano phase change storage device unit
03/02/2005CN1588553A Method for detecting information gating signal
03/02/2005CN1588552A Control device and method for double speed dynamic random access storage with asynchronous buffer
03/02/2005CN1588551A Carbon nano tube magnetic random access storge
03/02/2005CN1588326A Initializing set truss and method for dynamic random access storage
03/02/2005CN1588325A Initializing setting method of dynamic rondom access storage
03/02/2005CN1191635C Microelectronic device for storing information and method thereof
03/02/2005CN1191587C 检测电路 Detection circuit
03/02/2005CN1191586C Memory location arrangement and its use as a magnetic ram and as an associative memory
03/02/2005CN1191585C Self-analyzing semiconductor IC unit capable of carrying out redundant replacement with installed memory circrits
03/01/2005US6862672 Semiconductor memory device and method of controlling same
03/01/2005US6862667 Synchronous DRAM utilizable as shared memory
03/01/2005US6862654 Method and system for using dynamic random access memory as cache memory
03/01/2005US6862333 CMD and CMD-carrying CCD device
03/01/2005US6862251 Semiconductor memory device
03/01/2005US6862250 Circuit and method for generating output control signal in synchronous semiconductor memory device
03/01/2005US6862249 Devices and methods for controlling active termination resistors in a memory system
03/01/2005US6862248 Method for masking ringing in DDR SDRAM
03/01/2005US6862247 Pseudo-static synchronous semiconductor memory device
03/01/2005US6862246 Semiconductor apparatus which prevents generating noise and being influenced by noise
03/01/2005US6862245 Dual port static memory cell and semiconductor memory device having the same
03/01/2005US6862244 DRAM with segmental cell arrays and method of accessing same
03/01/2005US6862242 SRAM control circuit with a power saving function
03/01/2005US6862241 Semiconductor device and method for controlling semiconductor device
03/01/2005US6862240 Variable refresh control for a memory
03/01/2005US6862239 Circuit and method for self-refresh of DRAM cells through monitoring of cell leakage currents
03/01/2005US6862238 Memory system with reduced refresh current
03/01/2005US6862237 Data access method of semiconductor memory device and semiconductor memory device
03/01/2005US6862236 Ferroelectric memory device with an equalization circuit connected between word voltage supply lines and bit voltage supply lines
03/01/2005US6862235 Semiconductor device which is low in power and high in speed and is highly integrated
03/01/2005US6862233 Method and circuit for determining sense amplifier sensitivity
03/01/2005US6862232 Semiconductor device
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