Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2006
06/21/2006CN1260734C Programmable sub-surface aggregating metallization device and method of making same
06/21/2006CN1260733C Semiconductor memory and method for accessing semiconductor memory
06/21/2006CN1260565C Biosensor
06/20/2006US7065003 Latency control circuit and method of latency control
06/20/2006US7064998 Semiconductor memory
06/20/2006US7064997 Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
06/20/2006US7064996 Refreshing dynamic memory cells in a memory circuit and a memory circuit
06/20/2006US7064995 Storage device employing a flash memory
06/20/2006US7064993 Semiconductor memory device with common I/O type circuit configuration achieving write before sense operation
06/20/2006US7064992 Method and apparatus for saving current in a memory device
06/20/2006US7064991 Semiconductor storage device
06/20/2006US7064988 Synchronous semiconductor memory device of fast random cycle system and test method thereof
06/20/2006US7064986 Non-volatile semiconductor memory device using differential start programming voltage and programming method thereof
06/20/2006US7064983 Method for programming a reference cell
06/20/2006US7064980 Non-volatile memory and method with bit line coupled compensation
06/20/2006US7064976 Method of operating a stacked spin based memory
06/20/2006US7064975 Magnetic random access memory
06/20/2006US7064974 Magnetic random access memory and method for manufacturing the same
06/20/2006US7064973 Combination field programmable gate array allowing dynamic reprogrammability
06/20/2006US7064972 Ferroelectric memory device and read control method thereof
06/20/2006US7064970 Serial transistor-cell array architecture
06/20/2006US7064594 Pass gate circuit with stable operation in transition phase of input signal, self-refresh circuit including the pass gate circuit, and method of controlling the pass gate circuit
06/20/2006US7064589 Semiconductor device using two types of power supplies supplying different potentials
06/20/2006US7064571 Multiple-select multiplexer circuit, semiconductor memory device including a multiplexer circuit and method of testing the semiconductor memory device
06/20/2006US7064453 Semiconductor memory device including a gate electrode with a recess
06/20/2006US7064402 Magnetic random access memory
06/20/2006US7064398 Semiconductor memory device
06/20/2006US7064383 Non-volatile memory device
06/20/2006US7064376 High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines
06/20/2006US7064367 Magnetoresistive element, magnetic memory cell, and magnetic memory device
06/20/2006US7064366 Ferroelectric memory devices having an expanded plate electrode
06/20/2006US7064346 Transistor and semiconductor device
06/20/2006US7063985 Method for fabricating sensor devices having improved switching properties
06/20/2006US7063940 Curl resistant media
06/15/2006WO2006063312A2 Variable voltage supply bias and methods for negative differential resistance (ndr) based memory device
06/15/2006WO2006062175A1 Semiconductor device and method for manufacturing the same
06/15/2006WO2006062150A1 Magnetic random access memory
06/15/2006WO2006062113A1 Magnetic memory cell reading device
06/15/2006WO2005114742A3 Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
06/15/2006WO2005074386A3 Two-phase programming of a flash memory
06/15/2006US20060129865 Method and apparatus for data transfer
06/15/2006US20060129776 Method, system and memory controller utilizing adjustable read data delay settings
06/15/2006US20060129756 Computer arrangement using non-refreshed DRAM
06/15/2006US20060129751 Novel multi-state memory
06/15/2006US20060128107 Methods of forming memory devices
06/15/2006US20060128104 NROM memory cell, memory array, related devices and methods
06/15/2006US20060128103 NROM memory cell, memory array, related devices and methods
06/15/2006US20060128090 Latch-up prevention for memory cells
06/15/2006US20060128049 Devices having vertically-disposed nanofabric articles and methods of making the same
06/15/2006US20060128037 Method of manufacturing a magnetic tunnel junction device
06/15/2006US20060126414 Method for activating a plurality of word lines in a refresh cycle, and electronic memory device
06/15/2006US20060126413 Memory circuit and method for reading out a memory datum from such a memory circuit
06/15/2006US20060126400 Semiconductor integrated circuit
06/15/2006US20060126398 NROM memory cell, memory array, related devices and methods
06/15/2006US20060126395 Non-volatile memory cell and operating method thereof
06/15/2006US20060126394 Multi-state memory having data recovery after program fail
06/15/2006US20060126393 Data recovery methods in multi-state memory after program fail
06/15/2006US20060126391 Methods of program verifying non-volatile memory devices
06/15/2006US20060126390 Pipelined programming of non-volatile memories using early data
06/15/2006US20060126384 Flash memory integrated circuit with multi-selected modes
06/15/2006US20060126381 Method of writing to a phase change memory device
06/15/2006US20060126380 Semiconductor device
06/15/2006US20060126379 Thin film magnetic memory device writing data with bidirectional
06/15/2006US20060126378 Serial transistor-cell array architecture
06/15/2006US20060126377 Semiconductor memory device
06/15/2006US20060126376 Deglitching circuits for a radiation-hardened static random access memory based programmable architecture
06/15/2006US20060126375 Integrated circuit with a memory of reduced consumption
06/15/2006US20060126374 Sense amplifier circuitry and architecture to write data into and/or read from memory cells
06/15/2006US20060126373 Three-state memory cell
06/15/2006US20060126372 Circuits for driving FRAM
06/15/2006US20060126371 Magnetoresistive effect device, magnetic random access memory, and magnetoresistive effect device manufacturing method
06/15/2006US20060126370 Memory architecture and method of manufacture and operation thereof
06/15/2006US20060125880 Ink nozzle
06/15/2006US20060125753 Spatial light modulator with charge-pump pixel cell
06/15/2006US20060125034 Magnetoresistant device and magnetic memory device further comments
06/15/2006US20060125021 Methods of forming SRAM constructions
06/15/2006US20060125017 Stacked memory cell utilizing negative differential resistance devices
06/15/2006US20060124998 NROM memory cell, memory array, related devices and methods
06/15/2006US20060124992 NROM memory cell, memory array, related devices and methods
06/15/2006US20060124989 Ballistic injection NROM flash memory
06/15/2006US20060124967 NROM memory cell, memory array, related devices and methods
06/14/2006EP1669999A1 Semiconductor memory
06/14/2006EP1668671A2 Apparatus and method for selectively configuring a memory device using a bi-stable relay
06/14/2006EP1668646A1 Method and apparatus for implicit dram precharge
06/14/2006EP1668645A1 Clock receiver circuit arrangement, especially for semiconductor components
06/14/2006EP1668524A1 Memory buffer device integrating refresh
06/14/2006EP1668517A1 Selectable block protection for non-volatile memory
06/14/2006EP1590836A4 Mram cells having magnetic write lines with a stable magnetic state at the end regions
06/14/2006EP1446805B8 Electrodes, method and apparatus for memory structure
06/14/2006EP1402536B1 Charge coupled eeprom device and corresponding method of operation
06/14/2006EP1042818B1 Coulomb blockade multilevel memory device and corresponding methods of making and operating the same
06/14/2006DE19921259B4 Nichtflüchtiger ferroelektrischer Speicher Non-volatile ferroelectric memory
06/14/2006DE19636743B4 Halbleiterspeichervorrichtung mit Datenausgabewegen für einen schnellen Zugriff Semiconductor memory device with data output paths for quick access
06/14/2006DE19549156B4 Datensignalverteilungsschaltung für ein Synchronspeicherelement Data signal distribution circuit for a synchronous memory device
06/14/2006DE10260344B4 Magnetische Dünnfilmspeichervorrichtung, die Daten mit bidirektionalem Strom schreibt Thin film magnetic memory device which writes data with bidirectional current
06/14/2006DE102005030545A1 Semiconductor memory device e.g. dynamic random access memory, has switch pair connecting bit lines to local data lines, where voltage of data lines maintains bit line voltage at time when column selection signal is activated
06/14/2006DE102004059723A1 Memory component has memory cells and bitlines connected to read amplifier with neighboring bitlines connected to neighboring read amplifiers
06/14/2006DE102004059671A1 Verfahren zum Aktivieren von mehreren Wortleitungen bei einem Wiederauffrischungszyklus und elektronische Speichervorrichtung zur Durchführung des Verfahrens The method for activating a plurality of word lines in a refresh cycle and electronic memory device for implementing the method
06/14/2006DE102004059447A1 Integrated circuit for analysis of input signal characteristics has one port for first input signal, which adopts first and second state during first signal period and another port for second input signal
06/14/2006DE102004009692B4 Halbleiterspeichervorrichtung A semiconductor memory device