Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2006
08/17/2006US20060181921 Method for writing data into memory and the control device
08/17/2006US20060181920 Resistive memory element with shortened erase time
08/17/2006US20060181919 Embedded DRAM gain memory cell
08/17/2006US20060181918 Semiconductor memory device with dual storage node and fabricating and operating methods thererof
08/17/2006US20060181917 Semiconductor memory device for low voltage
08/17/2006US20060181916 Non-volatile memory cell for storage of a data item in an integrated circuit
08/17/2006US20060181915 Phase change memory device providing compensation for leakage current
08/17/2006DE102006001117A1 Verfahren und Apparat für Strom-Erfass-Verstärker-Kalibrierung in MRAM-Einrichtungen Method and apparatus for current-sense amplifier calibration in MRAM devices
08/17/2006DE102005007084A1 Integrierter Halbleiterspeicher mit einstellbarer interner Spannung Integrated semiconductor memory with adjustable internal voltage
08/17/2006DE102005006831A1 Halbleiterspeichermodul zur Verbesserung der Signalintegrität A semiconductor memory module for improving the signal integrity
08/17/2006DE102005006343A1 Integrated semiconductor memory e.g. dynamic RAM, for computer, has controllable switch connecting amplifier`s output terminal with internal terminal generating clock signal, when amplifier`s input terminals s controlled by input signal
08/17/2006DE102005004593A1 Integrated semiconductor memory e.g. dynamic random access memory, has electrolytic memory cells whose thickness sequence is oriented in memory cell planes, where ohmic resistance of sequence is reduced by applying programming current
08/17/2006DE102005004107A1 Integrierter Halbleiterspeicher mit einer Anordnung nichtflüchtiger Speicherzellen und Verfahren Integrated semiconductor memory having an array of nonvolatile memory cells and methods
08/17/2006DE102004037163B4 Vorrichtung zur Einstellung einer Taktverzögerung Apparatus for adjusting a clock delay
08/17/2006DE10035108B4 Nichtflüchtiger ferroelektrischer Speicher Non-volatile ferroelectric memory
08/16/2006EP1690263A1 Data retention indicator for magnetic memories
08/16/2006EP1690262A1 Non-homogeneous shielding of an mram chip with magnetic field sensor
08/16/2006EP1690261A1 Method and device for preventing erroneous programming of a magnetoresistive memory element
08/16/2006EP1690260A1 Method for operating a data storage apparatus employing passive matrix addressing
08/16/2006EP1623463A4 Mram architecture with a bit line located underneath the magnetic tunneling junction device
08/16/2006EP1446910A4 Phase adjustment apparatus and method for a memory device signaling system
08/16/2006EP1433182B1 Selective operation of a multi-state non-volatile memory system in a binary mode
08/16/2006EP1138044B1 Capacitive sensing array devices
08/16/2006EP1046049B1 Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
08/16/2006CN2806544Y Information paper
08/16/2006CN1820375A Self-aligned conductive lines for FET-based magnetic random access memory devices and method of forming it
08/16/2006CN1820324A Semiconductor integrated circuit
08/16/2006CN1820323A Skewed sense amp for variable resistance memory sensing
08/16/2006CN1820322A Data strobe synchronization circuit and method for double data rate, multi-bit writes
08/16/2006CN1819256A 相变存储器装置 Phase change memory device
08/16/2006CN1819206A Memory device, method of improving memory retention thereof, and antihunt means thereof
08/16/2006CN1819077A Polycrystalline FeO thin-film materials and production thereof
08/16/2006CN1819061A Memory devices and methods using improved reference cell trimming algorithms for accurate read operation window control
08/16/2006CN1819060A Integration semiconductor memory with nonvolatile storage unit device and method
08/16/2006CN1819059A Semiconductor integrated device
08/16/2006CN1819058A Memory outputting circuit and data outputting method
08/16/2006CN1819057A Dynamic random access memory with public pre-charger
08/16/2006CN1819056A Integrated DRAM memory device
08/16/2006CN1819055A Method for reading non-volatile memory cells
08/16/2006CN1819054A Semiconductor memory device and writing method thereof
08/16/2006CN1819023A System and method for transferring data to and from a magnetic shift register with a shiftable data column
08/16/2006CN1270461C Semiconductor integrated apparatus and delayed locking ring device
08/16/2006CN1270385C Magnetic RAM of transistor with vertical structure and making method thereof
08/16/2006CN1270323C Magnetic memory drive method
08/15/2006US7093145 Method and apparatus for calibrating a multi-level current mode driver having a plurality of source calibration signals
08/15/2006US7093139 Unauthorized modification of values stored in flash memory
08/15/2006US7093095 Double data rate scheme for data output
08/15/2006US7093091 Selectable block protection for non-volatile memory
08/15/2006US7093067 DRAM architecture enabling refresh and access operations in the same bank
08/15/2006US7093065 Random access memory initialization
08/15/2006US7092911 Reproducing apparatus and reproducing method
08/15/2006US7092314 Semiconductor memory device invalidating improper control command
08/15/2006US7092309 Standby mode SRAM design for power reduction
08/15/2006US7092307 Leakage current reduction for CMOS memory circuits
08/15/2006US7092306 Semiconductor device capable of adjusting operation timing using antifuse
08/15/2006US7092305 Semiconductor memory device
08/15/2006US7092304 Semiconductor memory
08/15/2006US7092303 Dynamic memory and method for testing a dynamic memory
08/15/2006US7092300 Memory apparatus having a short word line cycle time and method for operating a memory apparatus
08/15/2006US7092294 Nonvolatile semiconductor memory
08/15/2006US7092293 Non-volatile memory cell integrated with a latch
08/15/2006US7092292 Noise reduction technique for transistors and small devices utilizing an episodic agitation
08/15/2006US7092291 Nonvolatile semiconductor memory device, charge injection method thereof and electronic apparatus
08/15/2006US7092289 Efficient redundancy system for flash memories with uniformly sized blocks
08/15/2006US7092288 Non-volatile memory array with simultaneous write and erase feature
08/15/2006US7092286 Electrically programmable memory element with reduced area of contact
08/15/2006US7092285 State save-on-power-down using GMR non-volatile elements
08/15/2006US7092284 MRAM with magnetic via for storage of information and field sensor
08/15/2006US7092283 Magnetic random access memory devices including heat generating layers and related methods
08/15/2006US7092282 Semiconductor integrated circuit device
08/15/2006US7092281 Method and apparatus for reducing soft error rate in SRAM arrays using elevated SRAM voltage during periods of low activity
08/15/2006US7092280 SRAM with dynamically asymmetric cell
08/15/2006US7092279 Shared bit line memory device and method
08/15/2006US7092278 Memory device
08/15/2006US7092277 Phase-change memory device with biasing of deselected bit lines
08/15/2006US7092276 Series feram cell array
08/15/2006US7092275 Memory device of ferro-electric
08/15/2006US7092274 Ferroelectric memory device
08/15/2006US7092011 Camera for printing on media provided on print roll
08/15/2006US7091750 Sense amplifier and electronic apparatus using the same
08/15/2006US7091748 Semiconductor integrated circuit
08/15/2006US7091547 Semiconductor storage location
08/15/2006US7091539 Magnetic random access memory
08/15/2006US7091067 Current limiting antifuse programming path
08/15/2006US7091052 Method of forming ferroelectric memory cell
08/15/2006US7090337 Inkjet printhead comprising contractible nozzle chambers
08/10/2006WO2006083607A1 Radiation-hardened sram cell with write error protection
08/10/2006WO2006083085A1 Memory cell employing single electron transistor and memory device using the same
08/10/2006WO2006083034A1 Semiconductor storage apparatus and method for driving the same
08/10/2006WO2006069356A3 A method, apparatus, and system for partial memory refresh
08/10/2006US20060179490 Method and device for protection of an mram device against tampering
08/10/2006US20060177947 Magnetoresistive random-access memory device
08/10/2006US20060176739 Novel monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
08/10/2006US20060176735 Magnetic tunnel junction device and method of manufacturing the same
08/10/2006US20060176734 Double-decker mram cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating
08/10/2006US20060176733 Method of switching an MRAM cell comprising bidirectional current generation
08/10/2006US20060176732 SRAM and dual single ended bit sense for an SRAM
08/10/2006US20060176731 Multifunctional latch circuit for use with both sram array and self test device
08/10/2006US20060176730 Global bit line restore timing scheme and circuit
08/10/2006US20060176729 Local bit select with suppression of fast read before write