Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2006
07/11/2006US7075853 Semiconductor memory device including internal clock doubler
07/11/2006US7075852 Semiconductor memory device of hierarchy word type and sub word driver circuit
07/11/2006US7075847 Semiconductor memory device having optimum refresh cycle according to temperature variation
07/11/2006US7075845 FeRAM and sense amplifier array having data bus pull-down sensing function and sensing method using the same
07/11/2006US7075842 Differential current-mode sensing methods and apparatuses for memories
07/11/2006US7075841 Writing circuit for a phase change memory device
07/11/2006US7075839 Semiconductor memory device
07/11/2006US7075838 Semiconductor device and test method of testing the same
07/11/2006US7075837 Redundancy relieving circuit
07/11/2006US7075835 Redundancy control circuit which surely programs program elements and semiconductor memory using the same
07/11/2006US7075834 Semiconductor integrated circuit device
07/11/2006US7075830 Method for programming single-bit storage SONOS type memory
07/11/2006US7075826 Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
07/11/2006US7075825 Electrically alterable non-volatile memory with n-bits per cell
07/11/2006US7075824 NAND flash memory device
07/11/2006US7075823 Flash memory cell arrays having dual control gates per memory cell charge storage element
07/11/2006US7075822 High bandwidth datapath load and test of multi-level memory cells
07/11/2006US7075820 Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node
07/11/2006US7075819 Closed flux magnetic memory
07/11/2006US7075818 Magnetic random access memory with stacked memory layers having access lines for writing and reading
07/11/2006US7075817 Two terminal memory array having reference cells
07/11/2006US7075816 Quad flat no-lead (QFN) grid array package, method of making and memory module and computer system including same
07/11/2006US7075815 Spin driven resistors and nanogates
07/11/2006US7075814 Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
07/11/2006US7075813 Storage device using resistance varying storage element and reference resistance value decision method for the device
07/11/2006US7075812 Ferroelectric random access memory device and control method thereof
07/11/2006US7075811 Memory system and semiconductor integrated circuit
07/11/2006US7075810 Nonvolatile ferroelectric memory device
07/11/2006US7075357 Boosting circuit and semiconductor device using the same
07/11/2006US7075339 Semiconductor output circuit device
07/11/2006US7075328 Apparatus and method of error detection and correction in a radiation-hardened static random access memory field-programmable gate array
07/11/2006US7075152 Semiconductor storage device
07/11/2006US7075134 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same
07/11/2006US7075131 Phase change memory device
07/11/2006US7075105 Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device
07/11/2006US7074519 Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
07/11/2006US7073719 Data system
07/11/2006US7073713 Card having coded data and visible information, for operating a device
07/06/2006WO2006071854A1 Directed auto-refresh synchronization
07/06/2006WO2006071724A2 Mtj elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
07/06/2006WO2006071122A1 A method in the fabrication of a memory device
07/06/2006WO2006069761A1 Memory with selectable single cell or twin cell configuration and method of operating a memory
07/06/2006US20060149996 Techniques for storing accurate operating current values
07/06/2006US20060148130 Memory chip and semiconductor device using the memory chip and manufacturing method of those
07/06/2006US20060146641 High speed DRAM architecture with uniform access latency
07/06/2006US20060146636 Internal power management scheme for a memory chip in deep power down mode
07/06/2006US20060146635 Semiconductor device
07/06/2006US20060146634 Semiconductor device
07/06/2006US20060146630 Non volatile semiconductor memory device having a multi-bit cell array
07/06/2006US20060146629 Semiconductor memory, semiconductor memory system and method of monitoring dynamic temperature thereof
07/06/2006US20060146625 Semiconductor memory
07/06/2006US20060146623 Semiconductor device
07/06/2006US20060146620 Semiconductor memory having a spare memory cell
07/06/2006US20060146617 Programming and evaluating through PMOS injection
07/06/2006US20060146610 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
07/06/2006US20060146603 Method of forming and operating an assisted charge memory device
07/06/2006US20060146602 MRAM cell with reduced write current
07/06/2006US20060146601 Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
07/06/2006US20060146600 Reading phase change memories to reduce read disturbs
07/06/2006US20060146599 Magneto-resistance effect element and magnetic memory
07/06/2006US20060146598 Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
07/06/2006US20060146597 Hardware security device for magnetic memory cells
07/06/2006US20060146596 Configurable storage device
07/06/2006US20060146595 Methods for forming DRAM devices including protective patterns and related devices
07/06/2006US20060146594 Integrated DRAM-NVRAM multi-level memory
07/06/2006US20060146593 Method and circuit for reading a dynamic memory circuit
07/06/2006US20060146592 Ferroelectric random access memory device and method for driving the same
07/06/2006US20060146591 Memory device and semiconductor device
07/06/2006US20060146590 Semiconductor memory
07/06/2006US20060146589 Method for operating a passive matrix-addressable ferroelectric or electret memory device
07/06/2006US20060146588 Process monitoring for ferroelectric memory devices with in-line retention test
07/06/2006US20060146451 Magnetoresistive element and magnetic memory device
07/06/2006US20060146101 Ink reservoir
07/06/2006US20060145722 Apparatus and method of error detection and correction in a radiation-hardened static random access memory field-programmable gate array
07/06/2006US20060145225 Fast remanent resistive ferroelectric memory
07/06/2006DE19730958B4 Halbleiterspeichervorrichtung A semiconductor memory device
07/06/2006DE10330812B4 Halbleiterspeichermodul A semiconductor memory module
07/06/2006DE102005055437A1 MRAM mit schaltbarer ferromagnetischer Offset-Schicht MRAM with switchable ferromagnetic offset layer
07/06/2006DE102005053717A1 Erfass-Verstärker-Bitleitungs-Verstärkungs-Schaltkreis Sense amplifier bit line boost circuit
07/06/2006DE10127336B4 Halbleiterspeicherzelle mit einem Auswahltransistor und einem Speicherkondensator A semiconductor memory cell comprising a selection transistor and a storage capacitor
07/06/2006DE10018988B4 Hochgeschwindigkeits-Pipelinevorrichtung und Verfahren zum Erzeugen von Steuersignalen dafür High-speed pipelined device and method for generating control signals for
07/05/2006EP1677347A1 Magnetic random access memory
07/05/2006EP1677310A1 Semiconductor memory device and storage method thereof
07/05/2006EP1677204A2 A memory and an adaptive timing system for controlling access to the memory
07/05/2006EP1676213A1 Sparse caching for streaming media
07/05/2006EP1644936A4 Flash/dynamic random access memory field programmable gate array
07/05/2006EP1360692B1 Method for writing into magnetoresistive memory cells and magnetoresistive memory which can be written into according to said method
07/05/2006CN1799143A Planar polymer memory device
07/05/2006CN1799104A Integrity control for data stored in a non-volatile memory
07/05/2006CN1797606A Apparatus and method for latency control in high frequency synchronous semiconductor device
07/05/2006CN1797605A Semiconductor device
07/05/2006CN1263175C Magneto resistance effect device and magneto resistance effect magnetic head
07/05/2006CN1263154C Semiconductor storage and mfg. method thereof
07/05/2006CN1263144C Semiconductor memory device
07/05/2006CN1263142C Dynamic memory cell
07/05/2006CN1263141C Semiconductor memory device, display device, and portable electronic apparatus
07/05/2006CN1263138C Semiconductor memory having configuration of memory cells
07/05/2006CN1263136C Nonvolatile semiconductor memory
07/05/2006CN1263043C Semiconductor storage device having memory cells requiring no refresh operations
07/05/2006CN1263042C Readout circuit, reference circuit and semiconductor storage device