Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2006
04/18/2006US7032105 Method and apparatus for using a dynamic random access memory in substitution of a hard disk drive
04/18/2006US7032084 Circuit for generating column selection control signal in memory device
04/18/2006US7032066 Semiconductor memory unit
04/18/2006US7031898 Mechanism for recognizing and abstracting memory structures
04/18/2006US7031421 Method and device for initializing an asynchronous latch chain
04/18/2006US7031220 Semiconductor memory device and semiconductor integrated circuit device
04/18/2006US7031219 Internal power management scheme for a memory chip in deep power down mode
04/18/2006US7031218 Externally clocked electrical fuse programming with asynchronous fuse selection
04/18/2006US7031216 Refresh controller with low peak current
04/18/2006US7031215 Memory device and method having data path with multiple prefetch I/O configurations
04/18/2006US7031214 Digital multilevel memory system having multistage autozero sensing
04/18/2006US7031213 Semiconductor memory device using VSS or VDD bit line precharge approach without reference cell
04/18/2006US7031209 Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric
04/18/2006US7031208 Semiconductor memory device
04/18/2006US7031207 Semiconductor memory device with configurable on-chip delay circuit
04/18/2006US7031203 Floating-body DRAM using write word line for increased retention time
04/18/2006US7031202 Method and apparatus for rapidly storing data in memory cell without voltage loss
04/18/2006US7031201 Semiconductor memory device with late write function and data input/output method therefor
04/18/2006US7031199 Semiconductor memory device
04/18/2006US7031193 Method and device for programming an electrically programmable non-volatile semiconductor memory
04/18/2006US7031191 Stabilization method for drain voltage in non-volatile multi-level memory cells and related memory device
04/18/2006US7031188 Memory system having flash memory where a one-time programmable block is included
04/18/2006US7031187 Nonvolatile semiconductor memory device which stores multi-value information
04/18/2006US7031186 Biosensor and sensing cell array using the same
04/18/2006US7031185 Data storage device and method of forming the same
04/18/2006US7031184 Magnetic random access memory
04/18/2006US7031183 MRAM device integrated with other types of circuitry
04/18/2006US7031181 Multi-pulse reset write scheme for phase-change memories
04/18/2006US7031180 Method of reading data in ferroelectric memory device and ferroelectric memory device
04/18/2006US7031178 Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same
04/18/2006US7030681 Semiconductor device with multiple power sources
04/18/2006US7030671 Circuit for controlling pulse width
04/18/2006US7030643 Output buffer circuits including logic gates having balanced output nodes
04/18/2006US7030449 Semiconductor integrated circuit device having capacitor element
04/18/2006US7030446 Semiconductor switching devices
04/18/2006US7030438 Semiconductor integrated circuit
04/18/2006US7030437 Semiconductor device having sense amplifier including paired transistors
04/18/2006US7030435 Single transistor rare earth manganite ferroelectric nonvolatile memory cell
04/18/2006US7030408 Molecular wire transistor (MWT)
04/18/2006US7029941 Magnetic random access memory designs with controlled magnetic switching mechanism
04/18/2006US7029926 Double density MRAM with planar processing
04/18/2006US7029923 Method for manufacture of magneto-resistive bit structure
04/18/2006US7028908 Recording medium, and recording apparatus, reproducing apparatus, recording method and control method thereof
04/13/2006WO2006039370A2 Fuse memory cell comprising a diode, the diode serving as the fuse element
04/13/2006WO2006037432A1 Memory with resistance memory cells and evaluation circuit
04/13/2006WO2005119693A3 Configurable ready/busy control
04/13/2006US20060077752 Phase controlled high speed interfaces
04/13/2006US20060077717 Row decoder circuit for use in non-volatile memory device
04/13/2006US20060077716 Row decoder circuit of NAND flash memory and method of supplying an operating voltage using the same
04/13/2006US20060077715 Read-accessible column latch for non-volatile memories
04/13/2006US20060077712 Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus
04/13/2006US20060077707 Thermomagnetically assisted spin-momentum-transfer switching memory
04/13/2006US20060077706 Multilevel phase-change memory, operating method and manufacture method thereof
04/13/2006US20060077705 Methods of accelerated life testing of programmable resistance memory elements
04/13/2006US20060077704 Integrated circuit including sensor to sense environmental data, and system for testing
04/13/2006US20060077703 Integrated circuit device provided with series-connected TC parallel unit ferroelectric memory and method for testing the same
04/13/2006US20060077248 Printing cartridge incorporating print media and an internal feed mechanism
04/13/2006US20060076610 Semiconductor integrated circuit device with reduced leakage current
04/13/2006US20060076423 Data distribution method
04/13/2006DE19744438B4 Halbleiterspeichervorrichtung A semiconductor memory device
04/13/2006DE19503964B4 Datenausgabepuffer einer Halbleitervorrichtung Data output buffer of a semiconductor device
04/13/2006DE112004001023T5 Strukturierung eines magnetischen Tunnelübergangs unter Verwendung von SiC oder SiN Structuring a magnetic tunnel junction using SiC or SiN
04/13/2006DE112004001017T5 Integrationsschema zum Vermeiden von Plasmaschäden in MRAM Technologie Integration scheme for avoiding plasma damage in MRAM technology
04/13/2006DE10347467B4 Frequenzmultiplizierer und zugehöriges Multiplizierverfahren sowie Datenausgabepuffer und Halbleiterbaustein Frequency multiplier and associated multiplication method and data output buffer and semiconductor device
04/13/2006DE102005040840A1 Assoziativspeicherzelle mit resistiven Speicherelementen Content addressable memory cell having the resistive memory elements
04/13/2006DE102005001938B3 Stable reconfigurable digital logic system has several cells with magnetic layers, whose electrical resistance is altered by magnetic field pulses and has data cells in parallel with configuration cells
04/13/2006DE102004060348A1 Halbleiterspeichervorrichtung und Gehäuse dazu, und Speicherkarte mit Verwendung derselben Semiconductor memory device and housing to and memory card using the same
04/13/2006DE102004048056A1 Speicherkontrollbaustein und Verfahren zu dessen Betrieb Memory control module and method for its operation
04/13/2006DE102004047666A1 Speicher mit Widerstandsspeicherzelle und Bewertungsschaltung Memory with resistive memory cell and evaluation circuit
04/13/2006DE102004047638A1 Nichtflüchtige Speicherzelle und Verfahren zum Betreiben einer nichtflüchtigen Speicherzelle A non-volatile memory cell and method for operating a non-volatile memory cell
04/13/2006DE10113714B4 Eingabe/Ausgabe-Abtastverstärkerschaltung für ein Halbleiterspeicherbauelement Input / output sense amplifier for a semiconductor memory device
04/12/2006EP1646087A1 Surface spintronics device
04/12/2006EP1644936A1 Flash/dynamic random access memory field programmable gate array
04/12/2006CN1759451A Spin on polymers for organic memory devices
04/12/2006CN1759450A Programmable resistance memory device
04/12/2006CN1759449A Multi-frequency synchronizing clock signal generator
04/12/2006CN1758438A Semiconductor memory device and package thereof, and memory card using the same
04/12/2006CN1758376A Semiconductor device
04/12/2006CN1758375A Internal voltage supply circuit
04/12/2006CN1758374A Semiconductor storage device
04/12/2006CN1758373A Semiconductor storage device
04/12/2006CN1758372A Memory
04/12/2006CN1758371A Magnetic memory and manufacturing method thereof
04/12/2006CN1251328C Memory macro and semiconductor integrated circuit
04/12/2006CN1251251C Magnetic materials
04/12/2006CN1251241C Semiconductor memory
04/12/2006CN1251240C Static random access device
04/12/2006CN1251239C Semiconductor storage device adapting to multiple packing forms
04/12/2006CN1251238C Circuit for non-destructive, self-normalizing reading-out of MRAM memory cells
04/12/2006CN1251178C Quantum magnetic memory
04/11/2006US7028234 Method of self-repairing dynamic random access memory
04/11/2006US7028208 Duty cycle distortion compensation for the data output of a memory device
04/11/2006US7027350 Device and method for partial read-protection of a non-volatile storage
04/11/2006US7027347 Semiconductor memory device
04/11/2006US7027346 Bit line control for low power in standby
04/11/2006US7027343 Method and apparatus for controlling refresh operations in a dynamic memory device
04/11/2006US7027342 Semiconductor memory device
04/11/2006US7027340 Output device for static random access memory
04/11/2006US7027336 Semiconductor memory device for controlling output timing of data depending on frequency variation
04/11/2006US7027335 Semiconductor storage device