Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2006
07/19/2006CN1265394C Addressing method of memory matrix
07/19/2006CN1265393C Integrated semiconductor memory with memory units of ferroelectric storage effect
07/19/2006CN1265346C Display memory driver circuit display and cellular information apparatus
07/18/2006US7080270 Multi-threshold-voltage integrated circuit having a non-volatile data storage circuit
07/18/2006US7080193 Flash memory with accessible page during write
07/18/2006US7080192 File storage and erasure in flash memory
07/18/2006US7079443 Semiconductor device
07/18/2006US7079442 Layout of driver sets in a cross point memory array
07/18/2006US7079440 Method and system for providing directed bank refresh for volatile memories
07/18/2006US7079439 Low power auto-refresh circuit and method for dynamic random access memories
07/18/2006US7079438 Controlled temperature, thermal-assisted magnetic memory device
07/18/2006US7079436 Resistive cross point memory
07/18/2006US7079435 Sense amplifier circuit to write data at high speed in high speed semiconductor memory
07/18/2006US7079425 Data output circuit in a semiconductor memory device and control method of a data output circuit
07/18/2006US7079424 Methods and systems for reducing erase times in flash memory devices
07/18/2006US7079422 Periodic refresh operations for non-volatile multiple-bit-per-cell memory
07/18/2006US7079421 Method of improving data retention ability of semiconductor memory device, and semiconductor memory device
07/18/2006US7079418 Semiconductor storage apparatus and microcomputer having the same
07/18/2006US7079416 Non-volatile multi-level, semiconductor flash memory device and method of driving same
07/18/2006US7079415 Magnetic random access memory element
07/18/2006US7079414 Magnetic random access memory device
07/18/2006US7079413 Semiconductor memory device with back gate potential control circuit for transistor in memory cell
07/18/2006US7079412 Programmable MOS device formed by stressing polycrystalline silicon
07/18/2006US7079411 Ferroelectric nonvolatile code data output device
07/18/2006US7079410 Ferroelectric memory cell array and device for operating the same
07/18/2006US7079408 Circuit and method for reducing fatigue in ferroelectric memories
07/18/2006US7079148 Non-volatile memory parallel processor
07/18/2006US7078949 Analog delay locked loop having duty cycle correction circuit
07/18/2006US7078945 Semiconductor device having logic circuit and macro circuit
07/18/2006US7078774 Semiconductor memory device having a shallow trench isolation structure
07/18/2006US7078762 Semiconductor memory device and method for producing the same
07/18/2006US7078244 Multi-bit MRAM device with switching nucleation sites
07/18/2006US7078239 Integrated circuit structure formed by damascene process
07/18/2006US7077515 Media cartridge for inkjet printhead
07/18/2006US7077508 Micro-electromechanical liquid ejection device with a thermal actuator that undergoes rectilinear motion
07/18/2006CA2236336C Regulated dram cell plate and precharge voltage generator
07/13/2006WO2006073308A1 Method for operating a passive matrix-addressable ferroelectric or electret memory device
07/13/2006WO2006073115A1 Silicon-containing photosensitive composition, method for forming thin film pattern using same, protective film for electronic device, gate insulating film and thin film transistor
07/13/2006WO2006073060A1 Semiconductor storage device
07/13/2006WO2006072223A1 Memory device for recording and storage of information in at least ternary code
07/13/2006US20060155947 Selectable block protection for non-volatile memory
07/13/2006US20060155884 Apparatus and method for selectively configuring a memory device using a bi-stable relay
07/13/2006US20060155882 Integrity control for data stored in a non-volatile memory
07/13/2006US20060154381 Method and structure for generating offset fields for use in mram devices
07/13/2006US20060152994 Timer lockout circuit for synchronous applications
07/13/2006US20060152978 Multi-state NROM device
07/13/2006US20060152975 Multiple use memory chip
07/13/2006US20060152973 Multi-sensing level MRAM structure with different magneto-resistance ratios
07/13/2006US20060152972 Thin film magnetic memory device conducting read operation by a self-reference method
07/13/2006US20060152971 Thin film magnetic memory device reducing a charging time of a data line in a data read operation
07/13/2006US20060152970 Method and apparatus for current sense amplifier calibration in mram devices
07/13/2006US20060152969 Mram device with improved stack structure and offset field for low-power toggle mode writing
07/13/2006US20060152968 Spin based device with low transmission barrier
07/13/2006US20060152967 Hardmasks for providing thermally assisted switching of magnetic memory elements
07/13/2006US20060152966 Memory cell power switching circuit in semiconductor memory device and method for applying memory cell power voltage
07/13/2006US20060152965 Memory with reduced bitline leakage current and method for the same
07/13/2006US20060152964 SRAM having improved cell stability and method therefor
07/13/2006US20060152963 Integrated DRAM-NVRAM multi-level memory
07/13/2006US20060152962 Integrated DRAM-NVRAM multi-level memory
07/13/2006US20060152961 NOR-type hybrid multi-bit non-volatile memory device and method of operating the same
07/13/2006DE19952311B4 Integrierter Speicher mit Speicherzellen vom 2-Transistor/2-Kondensator-Typ Integrated memory having memory cells of the 2-transistor / 2-capacitor type
07/13/2006DE112004001704T5 Verfahren zum Auffrischen eines Speichers und integrierter Schaltkreis, der einen auffrischbaren Speicher enthält A method for refreshing a memory, and an integrated circuit that includes a refreshable memory
07/13/2006DE10302527B4 Teilspeisespannungserzeugungsschaltung und Halbleiterspeicherbauelement Part supply voltage generation circuit and semiconductor memory device
07/13/2006DE102005056351A1 Speichervorrichtung, Speichersteuereinheit und Verfahren zum Betreiben derselben Memory device, memory controller and method of operating the same
07/13/2006DE102005017534A1 Nichtflüchtige ferroelektrische Speichervorrichtung A non-volatile ferroelectric memory device
07/13/2006DE102005017533A1 Nonvolatile ferroelectric memory device e.g. ferroelectric random access memory device, has ferroelectric layer formed on floating channel layer and word line formed on ferroelectric layer
07/13/2006DE102005000841A1 Integrierter Halbleiterspeicher mit Anpassung des Bewertungsverhaltens von Leseverstärkern Integrated semiconductor memory with adjustment of the evaluation behavior of sense amplifiers
07/13/2006DE102004063531A1 Halbleiter-Speicherbauelement, System mit Halbleiter-Speicherbauelement, und Verfahren zum Betrieb eines Halbleiter-Speicherbauelements A semiconductor memory device, system semiconductor memory device, and method for operating a semiconductor memory device
07/13/2006DE102004048056B4 Speicherkontrollbaustein und Verfahren zu dessen Betrieb Memory control module and method for its operation
07/12/2006EP1679719A1 Magnetoresistive element, magnetic memory cell, and magnetic memory device
07/12/2006EP1679607A2 A memory controller with an adaptive timing system for controlling access to the memory
07/12/2006EP1678722A1 Programming method based on the behavior of non-volatile memory cells
07/12/2006EP1678721A1 Memory assembly and method for operating the same
07/12/2006EP1606215A4 Nanoscopic structure and devices using the same
07/12/2006EP1518246B1 Circuit and method of writing a toggle memory
07/12/2006EP1374033B1 Improved high speed data capture circuit for a digital device
07/12/2006EP1364372B1 Non-destructive readout
07/12/2006CN1802707A An apparatus and method for a configurable mirror fast sense amplifier
07/12/2006CN1801625A Delay locked loop and semiconductor memory device having the same
07/12/2006CN1801605A Comparator using differential amplifier with reduced current consumption
07/12/2006CN1801398A Sram device
07/12/2006CN1801397A 半导体存储器件 A semiconductor memory device
07/12/2006CN1801396A Memory controller to utilize dram write buffers
07/12/2006CN1801395A Method for repairing and running storage devices
07/12/2006CN1801394A Dynamic random access memory self-refresh circuit relating with temperature
07/12/2006CN1801393A Time limit function utilization apparatus
07/12/2006CN1801392A 半导体存储元件及半导体存储器件 The semiconductor memory device and semiconductor memory device
07/12/2006CN1801391A Memory device and circuit
07/12/2006CN1801390A Mram and manufacture method thereof
07/12/2006CN1801389A High performance register file with bootstrapped storage supply and related method
07/12/2006CN1801388A 半导体存储装置 The semiconductor memory device
07/12/2006CN1801331A Magnetic tunnel junctions using amorphous materials as reference and free layers
07/12/2006CN1264219C Synchronous semiconductor memory device
07/12/2006CN1264167C Semiconductor storage apparatus
07/11/2006US7076678 Method and apparatus for data transfer
07/11/2006US7076601 Memory controller and data processing system
07/11/2006US7076600 Dual purpose interface using refresh cycle
07/11/2006US7075857 Distributed write data drivers for burst access memories
07/11/2006US7075856 Apparatus for latency specific duty cycle correction
07/11/2006US7075854 Semiconductor memory device, write control circuit and write control method for the same