Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
04/2006
04/11/2006US7027334 Semiconductor memory device
04/11/2006US7027333 High reliability triple redundant memory element with integrated testability and voting structures on each latch
04/11/2006US7027330 Multi-input/output repair method of NAND flash memory device and NAND flash memory device thereof
04/11/2006US7027327 Non-volatile memory
04/11/2006US7027326 3T1D memory cells using gated diodes and methods of use thereof
04/11/2006US7027325 Magnetic random access memory
04/11/2006US7027324 Method and system for providing common read and write word lines for a segmented word line MRAM array
04/11/2006US7027323 Storage device having parallel connected memory cells that include magnetoresistive elements
04/11/2006US7027322 EPIR device and semiconductor devices utilizing the same
04/11/2006US7027321 Tunneling anisotropic magnetoresistive device and method of operation
04/11/2006US7027320 Soft-reference magnetic memory digitized device and method of operation
04/11/2006US7027319 Retrieving data stored in a magnetic integrated memory
04/11/2006US7027318 Method and system for adjusting offset voltage
04/11/2006US7027317 Semiconductor memory with embedded DRAM
04/11/2006US7027316 Access circuit and method for allowing external test voltage to be applied to isolated wells
04/11/2006US7027272 Magnetoresistance effect device, and magnetoresistance effect magnetic head
04/11/2006US7027205 Methods and apparatus for selectively updating memory cell arrays
04/11/2006US7026911 Point contact array, not circuit, and electronic circuit comprising the same
04/11/2006US7026910 GMR module
04/11/2006US7026841 Logical operation circuit and logical operation method
04/11/2006US7026702 Memory device
04/11/2006US7026677 Magnetoresistive element, magnetic memory cell, and magnetic memory device, and method for manufacturing the same
04/11/2006US7026673 Low magnetization materials for high performance magnetic memory devices
04/11/2006US7026671 Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
04/11/2006US7026670 Ferroelectric memory device with a conductive polymer layer and a method of formation
04/11/2006US7026639 Phase change memory element capable of low power operation and method of fabricating the same
04/11/2006CA2229611C Electrically erasable memory elements characterized by reduced current and improved thermal stability
04/06/2006WO2006036952A2 Monitoring of cell adhesion and spreading
04/06/2006WO2006036907A2 One time programmable latch and method
04/06/2006WO2006036783A1 Read approach for multi-level virtual ground memory
04/06/2006WO2006035943A1 Magnetic memory
04/06/2006WO2004066090A3 Query string matching method and apparatus
04/06/2006US20060073642 Method for manufacturing a multiple-bit-per-cell memory
04/06/2006US20060072427 Information storage
04/06/2006US20060072363 High speed and high precision sensing for digital multilevel non-volatile memory system
04/06/2006US20060072361 Semiconductor memory device with adjustable I/O bandwidth
04/06/2006US20060072357 Method of operating a programmable resistance memory array
04/06/2006US20060072356 State-retentive mixed register file array
04/06/2006US20060072355 Electrostatic capacitance detection device and smart card
04/06/2006US20060072354 Information processing device and method, recording medium, and program
04/06/2006US20060072030 Data card reader
04/06/2006DE19839105B4 Integrierter Halbleiterspeicher mit Steuerungseinrichtung zum taktsynchronen Schreiben und Lesen Integrated semiconductor memory controller for isochronous reading and writing
04/06/2006DE10339894B4 Leseverstärker-Zuschalt/Abschalt-Schaltungsanordnung Sense amplifier Zuschalt / shutdown circuitry
04/06/2006DE10249207B4 Verfahren zur Herstellung eines ringförmigen Mikrostrukturelementes A method for producing an annular microstructure element
04/06/2006DE102005047197A1 Memory system has control circuit that delays refresh of target block, reads requested information from main memory and transfers target memory block to cache memory, when refresh start signal is enabled and read signal is received
04/06/2006DE102005046425A1 Array resistiver Speicherzellen und Verfahren zum Erfassen von Widerstandswerten solcher Zellen Array of resistive memory cells and method for detecting resistance values ​​of such cells
04/06/2006DE102004046957A1 Verfahren und Schaltungsanordnungen zum Abgleichen von Signallaufzeiten in einem Speichersystem Method and circuit arrangement for matching of signal propagation times in a retrieval system,
04/05/2006EP1643506A1 System and method for automatically saving memory contents of a data processing device on power failure
04/05/2006EP1642386A2 Configurable cablecard
04/05/2006EP1642299A2 Sram cell structure and circuits
04/05/2006EP1642298A1 Method for reducing power consumption when sensing a resistive memory
04/05/2006EP1642297A1 Data strobe synchronization circuit and method for double data rate, multi-bit writes
04/05/2006EP0896734B1 All-metal, giant magnetoresistive, solid-state component
04/05/2006CN1757076A MRAM architecture with electrically isolated read and write circuitry
04/05/2006CN1755963A Magnetoresistance effect device and method of production of the same
04/05/2006CN1755836A SRAM array with improved cell stability
04/05/2006CN1755835A Integrated circuit chip with improved array stability
04/05/2006CN1755834A Semiconductor memory device, test circuit and test method
04/05/2006CN1755833A Floating gate analog voltage level shift circuit and method for producing a voltage reference that operates on a low supply voltage
04/05/2006CN1755832A Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods
04/05/2006CN1755831A Resistance ems memory device especially cbram ems memory
04/05/2006CN1755577A Semiconductor integrated circuit
04/05/2006CN1249815C Information memory and manufacturing method therefor
04/05/2006CN1249727C An analog functional module using magnetoresistive memory technology
04/05/2006CN1249726C High voltage generating circuit for semiconductor storage device
04/05/2006CN1249725C Semiconductor storage device formed for optimizing testing technique and rebundance technique
04/05/2006CN1249724C Semiconductor storage and its data reading method
04/05/2006CN1249723C Semiconductor device
04/05/2006CN1249722C Method for constructing multi-counter, multi-counter and multi-queue device using same
04/04/2006US7024524 Semiconductor storage
04/04/2006US7023760 Memory arrangement for processing data, and method
04/04/2006US7023757 Semiconductor device
04/04/2006US7023756 DRAM power bus control
04/04/2006US7023755 Low power control circuit and method for a memory device
04/04/2006US7023754 Semiconductor device having standby mode and active mode
04/04/2006US7023753 Current controlled word and sense source
04/04/2006US7023751 Method and circuit for reducing DRAM refresh power by reducing access transistor sub threshold leakage
04/04/2006US7023749 Semiconductor integrated circuit device
04/04/2006US7023748 Semiconductor storage device
04/04/2006US7023747 Semiconductor memory device and address conversion circuit
04/04/2006US7023746 High-speed synchronous memory device
04/04/2006US7023743 Stacked columnar 1T-nMTJ structure and its method of formation and operation
04/04/2006US7023742 Semiconductor device and method for inputting/outputting data simultaneously through single pad
04/04/2006US7023739 NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
04/04/2006US7023736 Non-volatile memory and method with improved sensing
04/04/2006US7023735 Methods of increasing the reliability of a flash memory
04/04/2006US7023734 Overerase correction in flash EEPROM memory
04/04/2006US7023733 Boosting to control programming of non-volatile memory
04/04/2006US7023727 Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry
04/04/2006US7023726 Hybrid magnetoresistive random access memory (MRAM) architecture
04/04/2006US7023725 Magnetic memory
04/04/2006US7023724 Pseudo tunnel junction
04/04/2006US7023723 Magnetic memory layers thermal pulse transitions
04/04/2006US7023722 Low-operating voltage and low power consumption semiconductor memory device
04/04/2006US7023721 Semiconductor integrated circuit device
04/04/2006US7023720 Ferroelectric memory device
04/04/2006US7023235 Redundant single event upset supression system
04/04/2006US7023198 Semiconductor device and method of inspecting the same
04/04/2006US7023071 Semiconductor integrated circuit device and process for manufacturing the same
04/04/2006US7023058 Semiconductor integrated circuit device