Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2006
05/18/2006US20060104106 Memory element and memory device
05/18/2006US20060103989 Magnetic head, magnetic head gimbal assembly, magnetic recording and reproducing apparatus, and magnetic memory
05/18/2006US20060102971 Magnetic random access memory with lower switching field
05/18/2006US20060102934 Semiconductor integrated circuit device
05/18/2006DE10358038B4 Integrierte Schaltung zur Speicherung von Betriebsparametern An integrated circuit for storage of operating parameters
05/18/2006DE102005053171A1 Memory cells e.g. dynamic random access memory cell, refreshing method for use in volatile memory device, involves performing auto-refresh operation on set of memory cells in response to auto-refresh command
05/18/2006DE102005052508A1 Referenz-Strom-Quelle für Strom-Erfass-Verstärker und programmierbarer Widerstand konfiguriert mit magnetischen Tunnelübergang-Zellen Reference current source for current-sense amplifier and programmable resistor configured with magnetic tunnel junction cells
05/18/2006DE102004053486A1 Integrierter Halbleiterspeicher Integrated semiconductor memory
05/18/2006DE102004053316A1 Operating parameters e.g. operating temperatures, reading and selecting method for e.g. dynamic RAM, involves providing memory with registers to store parameters, where read and write access on register takes place similar to access on cell
05/18/2006DE102004049667B3 Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle und entsprechender Grabenkondensator Manufacturing method for a grave capacitor with an insulation collar, which is electrically connected through a buried contact on one side with a substrate, in particular for a semiconductor memory cell and corresponding capacitor grave
05/18/2006DE10139725B4 Integrierter dynamischer Speicher sowie Verfahren zum Betrieb eines integrierten dynamischen Speichers Integrated dynamic memory and method for operating an integrated dynamic memory
05/17/2006EP1657723A1 Semiconductor memory and operation method of semiconductor memory
05/17/2006EP1656676A1 Detecting over programmed memory
05/17/2006EP1606821A4 An apparatus and method for a configurable mirror fast sense amplifier
05/17/2006EP1423855B1 Mram with midpoint generator reference
05/17/2006CN1774769A Method of programming dual cell memory device to store multiple data states per cell
05/17/2006CN1774768A Low-power high-performance memory circuit and related methods
05/17/2006CN1774767A Dynamic semiconductor storage device
05/17/2006CN1774766A Memory device with sense amplifier and self-timed latch
05/17/2006CN1773863A RS (256, 252) code error-correcting decoding chip used for large-volume memory
05/17/2006CN1773628A Single-side structural static memory in LCOS
05/17/2006CN1773627A Internal voltage generator for semiconductor memory device
05/17/2006CN1773626A Oscillator of semiconductor device
05/16/2006US7047461 Semiconductor integrated circuit device with test data output nodes for parallel test results output
05/16/2006US7047391 System and method for re-ordering memory references for access to memory
05/16/2006US7047332 Data transfer control device and electronic instrument
05/16/2006US7046579 Semiconductor storage device
05/16/2006US7046576 Multi-port memory device
05/16/2006US7046575 Bus connection circuit for read operation of multi-port memory device
05/16/2006US7046573 Semiconductor integrated circuit and IC card
05/16/2006US7046571 Internal voltage generating circuit for periphery, semiconductor memory device having the circuit and method thereof
05/16/2006US7046568 Memory sensing circuit and method for low voltage operation
05/16/2006US7046567 Sense amplifying circuit and bit comparator with the sense amplifying circuit
05/16/2006US7046557 Flash memory
05/16/2006US7046551 Nonvolatile memories with asymmetric transistors, nonvolatile memories with high voltage lines extending in the column direction, and nonvolatile memories with decoding circuits sharing a common area
05/16/2006US7046548 Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
05/16/2006US7046547 Magnetic non-volatile memory coil layout architecture and process integration scheme
05/16/2006US7046546 Semiconductor memory device
05/16/2006US7046545 Semiconductor integrated circuit device including magnetoresistive effect device and method of manufacturing the same
05/16/2006US7046544 SRAM cell with read-disturb immunity
05/16/2006US7046543 Semiconductor memory device with improved data retention characteristics
05/16/2006US7046542 Semiconductor integrated circuit device
05/16/2006US7046541 Semiconductor integrated circuit device
05/16/2006US7046540 Semiconductor integrated circuit device and information storage method therefor
05/16/2006US7046075 Semiconductor integrated circuit
05/16/2006US7046061 Delayed locked loops and methods of driving the same
05/16/2006US7046059 Delay locked loop and its control method
05/16/2006US7046045 SOI sense amplifier with cross-coupled bit line structure
05/16/2006US7045841 Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM
05/16/2006US7045368 MRAM cell structure and method of fabrication
05/16/2006US7045071 Method for fabricating ferroelectric random access memory device
05/16/2006US7044584 Wide format pagewidth inkjet printer
05/16/2006CA2465341C Folded memory layers
05/11/2006WO2006049407A1 Current induced magnetoresistance device
05/11/2006US20060099797 Integrated circuits with contemporaneously formed array electrodes and logic interconnects
05/11/2006US20060098525 Array substrate and display apparatus having the same
05/11/2006US20060098523 Semiconductor memory device capable of driving non-selected word lines to first and second potentials
05/11/2006US20060098518 Memory array with staged output
05/11/2006US20060098517 Semiconductor memory device
05/11/2006US20060098509 Sequential tracking temperature sensors and methods
05/11/2006US20060098504 Semiconductor memory
05/11/2006US20060098499 Random access memory with stability enhancement and early read elimination
05/11/2006US20060098491 Non-volatile memory device providing controlled bulk voltage during programming operations
05/11/2006US20060098490 Non-volatile semiconductor memory device and method for reading the same
05/11/2006US20060098489 Semiconductor integrated circuit device and non-volatile memory system using the same
05/11/2006US20060098488 Semiconductor memory device
05/11/2006US20060098482 Floating-body dynamic random access memory with purge line
05/11/2006US20060098481 Circuitry for and method of improving statistical distribution of integrated circuits
05/11/2006US20060098480 Memory
05/11/2006US20060098479 CMI-001U solid state magnetic memory system and method
05/11/2006US20060098478 Magnetic memory device and writing method of the same
05/11/2006US20060098477 Magnetic random access memory
05/11/2006US20060098476 Circuit arrangement having security and power saving modes
05/11/2006US20060098475 Static random access memory and pseudo-static noise margin measuring method
05/11/2006US20060098474 High performance, low leakage SRAM device and a method of placing a portion of memory cells of an SRAM device in an active mode
05/11/2006US20060098473 Semiconductor memory element and semiconductor memory device
05/11/2006US20060098472 Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
05/11/2006US20060098471 High reliability area efficient non-volatile configuration data storage for ferroelectric memories
05/11/2006US20060098470 Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory
05/11/2006US20060097311 Semiconductor memory device
05/11/2006DE19952667B4 Nichtflüchtiger ferroelektrischer Speicher Non-volatile ferroelectric memory
05/11/2006DE112004001049T5 Nichtflüchtige Speichervorrichtung A non-volatile memory device
05/11/2006DE10253879B4 Phasendetektor und Verfahren zur Taktsignal-Phasendifferenzkompensation Phase detector and method for clock signal phase difference compensating
05/11/2006DE102004047411B3 Magnetisches Speicherschichtsystem A magnetic storage layer system
05/10/2006EP1654736A2 Method and system for optimizing reliability and performance of programming data in non-volatile memory devices
05/10/2006EP1588372A4 Mram architecture with a grounded write bit line and electrically isolated read bit line
05/10/2006EP1479006B1 A memory and an adaptive timing system for controlling access to the memory
05/10/2006EP1374248B1 Very small swing and low voltage cmos static memory
05/10/2006EP1166357B1 Memory cell arrangement
05/10/2006CN1771565A Semiconductor memory and operation method of semiconductor memory
05/10/2006CN1771481A Detection circuit for mixed asynchronous and synchronous memory operation
05/10/2006CN1770464A Magnetic memory device
05/10/2006CN1770461A Memory cell having an electric field programmable storage element, and method of operating same
05/10/2006CN1770455A Non-volatility memory, non-volatility memory array and its manufacturing method
05/10/2006CN1770326A Operation scheme for programming charge trapping non-volatile memory
05/10/2006CN1770324A Semiconductor memory
05/10/2006CN1770323A Semiconductor memory device with on die termination circuit
05/10/2006CN1770322A Semiconductor memory device with on-die termination circuit
05/10/2006CN1770321A Memory
05/10/2006CN1770320A System and method for controlling the access and refresh of a memory