| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 07/27/2006 | US20060164877 Memory |
| 07/27/2006 | US20060164876 Multi-transistor memory cells |
| 07/27/2006 | US20060163634 Semiconductor storage device |
| 07/27/2006 | US20060163614 Multi-layer memory arrays |
| 07/27/2006 | US20060163196 Method for producing magnetic memory device |
| 07/27/2006 | DE4308665B4 DRAM mit einer bidirektionalen globalen Bitleitung DRAM with a bidirectional global bit line |
| 07/27/2006 | DE102005001892A1 Steuereinheit Control unit |
| 07/26/2006 | EP1684305A1 Magnetic memory device and method of magnetization reversal of the magnetization of at least one magnetic memory element |
| 07/26/2006 | EP1684304A2 Binding of organic molecules to a silicon surface for fabrication of storage elements with organic compounds |
| 07/26/2006 | EP1683161A2 Stress assisted current driven switching for magnetic memory applications |
| 07/26/2006 | EP1683160A2 A method circuit and system for read error detection in a non-volatile memory array |
| 07/26/2006 | EP1683159A2 Method, system and circuit for programming a non-volatile memory array |
| 07/26/2006 | EP1584107A4 Adaptive negative differential resistance device |
| 07/26/2006 | EP1471644B1 Logical operation circuit and logical operation method |
| 07/26/2006 | EP1332499B1 Magnetoresistive memory (mram) |
| 07/26/2006 | CN1809869A Memory controller and data driver for flat panel display |
| 07/26/2006 | CN1809823A Method and apparatus to establish, report and adjust system memory usage |
| 07/26/2006 | CN1808735A Phase-change storage and its manufacturing method |
| 07/26/2006 | CN1808621A Memory cell having improved read stability, memory array and integrate circuit |
| 07/26/2006 | CN1266767C Semiconductor device and method for manufacturing semiconductor device |
| 07/26/2006 | CN1266754C Semiconductor memory device with reduced package test time |
| 07/26/2006 | CN1266704C Thin film magnetic body memory for reading data without base unit |
| 07/25/2006 | US7082593 Method and apparatus of IC implementation based on C++ language description |
| 07/25/2006 | US7082513 Integrated memory and method for checking the functioning of an integrated memory |
| 07/25/2006 | US7082491 Memory device having different burst order addressing for read and write operations |
| 07/25/2006 | US7082091 Information reproducing method judging a multivalued level of a present cell by referring to judged multivalued levels of a preceding cell and an ensuing cell |
| 07/25/2006 | US7082075 Memory device and method having banks of different sizes |
| 07/25/2006 | US7082074 Semiconductor device having a power down mode |
| 07/25/2006 | US7082072 Semiconductor memory device with refreshment control |
| 07/25/2006 | US7082070 Temperature detection circuit and temperature detection method |
| 07/25/2006 | US7082067 Circuit for verifying the write speed of SRAM cells |
| 07/25/2006 | US7082063 Semiconductor memory device |
| 07/25/2006 | US7082060 Soft programming for recovery of overerasure |
| 07/25/2006 | US7082058 Non-volatile semiconductor memory device having sense amplifier with increased speed |
| 07/25/2006 | US7082056 Flash memory device and architecture with multi level cells |
| 07/25/2006 | US7082054 Semiconductor storage device having page copying function |
| 07/25/2006 | US7082053 Non-volatile latch with magnetic junctions |
| 07/25/2006 | US7082052 Multi-resistive state element with reactive metal |
| 07/25/2006 | US7082051 Method and driver for programming phase change memory cell |
| 07/25/2006 | US7082050 Method to equalize word current circuitry |
| 07/25/2006 | US7082049 Random access memory having fast column access |
| 07/25/2006 | US7082048 Low voltage operation DRAM control circuits |
| 07/25/2006 | US7082047 Ferroelectric memory input/output apparatus |
| 07/25/2006 | US7082046 Semiconductor memory device and method of reading data |
| 07/25/2006 | US7082045 Offset compensated sensing for magnetic random access memory |
| 07/25/2006 | US7081774 Circuit having source follower and semiconductor device having the circuit |
| 07/25/2006 | US7081653 Semiconductor memory device having mis-type transistors |
| 07/25/2006 | US7081635 High activity, spatially distributed radiation source for accurately simulating semiconductor device radiation environments |
| 07/20/2006 | WO2006076378A1 Programmable matrix array with chalcogenide material |
| 07/20/2006 | WO2006076145A1 Multi-level ono flash program algorithm for threshold width control |
| 07/20/2006 | WO2006076113A1 Sram having improved cell stability and method therefor |
| 07/20/2006 | WO2006076037A2 Controllable nanomechanical memory element |
| 07/20/2006 | WO2006074859A1 Non-volatile reconfigurable digital logic unit |
| 07/20/2006 | WO2006074810A1 Magnetic memory device and method of magnetization reversal of the magnetization of at least one magnetic memory element |
| 07/20/2006 | WO2005059966A3 Rotational use of memory to minimize write cycles |
| 07/20/2006 | US20060161876 Array-based architecture for molecular electronics |
| 07/20/2006 | US20060160297 Semiconductor integrated circuit device and process for manufacturing the same |
| 07/20/2006 | US20060160251 Method in the fabrication of a memory device |
| 07/20/2006 | US20060158947 Reference sense amplifier for non-volatile memory |
| 07/20/2006 | US20060158945 Readout circuit for semiconductor storage device |
| 07/20/2006 | US20060158941 Serial bus controller using nonvolatile ferroelectric memory |
| 07/20/2006 | US20060158938 Method, circuit and systems for erasing one or more non-volatile memory cells |
| 07/20/2006 | US20060158936 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line |
| 07/20/2006 | US20060158935 Method for compensated sensing in non-volatile memory |
| 07/20/2006 | US20060158930 CACT-TG (CATT) low voltage NVM cells |
| 07/20/2006 | US20060158929 Thin film magnetic memory device for conducting data write operation by application of a magnetic field |
| 07/20/2006 | US20060158928 Phase change memory cell with junction selector and manufacturing method thereof |
| 07/20/2006 | US20060158927 Spin based electronic device |
| 07/20/2006 | US20060158926 Memory cell and semiconductor integrated circuit device |
| 07/20/2006 | US20060158925 Non-volatile static memory cell |
| 07/20/2006 | US20060158924 Semiconductor memory device |
| 07/20/2006 | US20060158923 Nonvolatile semiconductor memory device |
| 07/20/2006 | US20060158922 Semiconductor device |
| 07/20/2006 | US20060158921 Semiconductor integrated circuit device |
| 07/20/2006 | US20060158918 Semiconductor memory device |
| 07/20/2006 | US20060158519 Digital camera having parallel processing controller |
| 07/20/2006 | US20060157775 Byte-operational nonvolatile semiconductor memory device |
| 07/20/2006 | US20060157772 Nonvolatile memory device |
| 07/20/2006 | US20060157765 Magnetic random access memory designs with controlled magnetic switching mechanism |
| 07/20/2006 | US20060157755 Transistor of volatile memory device with gate dielectric structure capable of trapping charges and method for fabricating the same |
| 07/20/2006 | US20060157738 Semiconductor memory device and its manufacturing method |
| 07/20/2006 | DE69831918T2 Speicherschaltung mit DMA Prüfung und sein Prüfverfahren Memory circuit with DMA testing and test methods to be |
| 07/20/2006 | DE10254160B4 Transistorarray und damit hergestellte Halbleiterspeicheranordnung Transistor array and thus produced semiconductor memory device |
| 07/20/2006 | DE102006001073A1 Arbeitszyklusdetektor mit erstem, zweitem und drittem Wert Duty cycle detector with first, second and third value |
| 07/20/2006 | DE102005062769A1 Hybrid-Speicherzelle für durch spinpolarisierten Elektronenstrom induziertes Schalten und Schreib/Leseprozess, der eine derartige Speicherzelle verwendet Hybrid memory cell for induced by spin-polarized electron current switching and write / read process that uses such memory cell |
| 07/20/2006 | DE102005059556A1 Hochfrequenzfeld-erwärmte Dioden zum Bereitstellen eines thermisch gestützten Umschaltens zu Magnetspeicherelementen High-frequency field-heated diode for providing a thermally assisted switching to magnetic storage elements |
| 07/20/2006 | DE102005059555A1 Hartmasken zur Bereitstellung eines thermisch gestützten Umschaltens von Magnetspeicherelementen Hard masks for providing a thermally assisted switching magnetic memory elements |
| 07/20/2006 | DE102004027423A1 Speicherschaltung mit redundanten Speicherbereichen Memory circuit with redundant memory areas |
| 07/20/2006 | CA2568140A1 Controllable nanomechanical memory element |
| 07/19/2006 | EP1680787A2 Nrom flash memory with self-aligned structural charge separation |
| 07/19/2006 | CN1806294A Ferroelectric memory device |
| 07/19/2006 | CN1806293A Universally accessible fully programmable memory built-in self-test (mbist) system and method |
| 07/19/2006 | CN1805167A Phase change type multi-digit quasi-memory cell and its operating method |
| 07/19/2006 | CN1805166A Magnetic logic device and methods of manufacturing and operating the same |
| 07/19/2006 | CN1805081A Anti-ferromagnetic coupling magnetic-particle thin-film material and its preparation and application |
| 07/19/2006 | CN1805048A 半导体存储装置和刷新控制方法 The semiconductor memory device and a refresh control method |
| 07/19/2006 | CN1265463C Semiconductor storage device |
| 07/19/2006 | CN1265462C Semiconductor storage device |
| 07/19/2006 | CN1265461C Integrated circuit for storage |
| 07/19/2006 | CN1265460C Memory device and method for driving the memory device |