Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2006
07/05/2006CN1263041C Film magnetic storage with parallel processing of data readout and write-in
07/05/2006CN1263040C Film magnetic storage device with data write-in by applying magnetic field
07/05/2006CN1263039C Semiconductor storage apparatus for increasing bus efficiency and method thereof
07/05/2006CN1263037C Method and apparatus for controlling temperature of component
07/05/2006CN1262933C Compound storage device
07/05/2006CN1262929C Storage controller and storage controlling method
07/04/2006US7073157 Array-based architecture for molecular electronics
07/04/2006US7073103 Smart verify for multi-state memories
07/04/2006US7073099 Method and apparatus for improving memory operation and yield
07/04/2006US7072530 Semiconductor memory apparatus
07/04/2006US7072243 Semiconductor memory
07/04/2006US7072242 Semiconductor integrated circuit device
07/04/2006US7072241 Semiconductor memory device and multi-chip module comprising the semiconductor memory device
07/04/2006US7072237 Method and system for low power refresh of dynamic random access memories
07/04/2006US7072235 Bias sensing in DRAM sense amplifiers through coupling and decoupling device
07/04/2006US7072233 Method and apparatus for optimizing the functioning of DRAM memory elements
07/04/2006US7072230 Method and apparatus for standby power reduction in semiconductor devices
07/04/2006US7072228 Semiconductor memory device with improved precharge timing
07/04/2006US7072227 Current mode output driver
07/04/2006US7072226 Method of erasing a flash memory cell
07/04/2006US7072225 Nonvolatile memory and method of programming the same memory
07/04/2006US7072224 Nonvolatile memory and method of erasing for nonvolatile memory
07/04/2006US7072222 Nonvolatile memory system, semiconductor memory and writing method
07/04/2006US7072218 Semiconductor integrated circuit, semiconductor non-volatile memory, memory card, and microcomputer
07/04/2006US7072215 Array structure of two-transistor cells with merged floating gates for byte erase and re-write if disturbed algorithm
07/04/2006US7072214 NOR flash memory device and method of shortening a program time
07/04/2006US7072213 NROM flash memory cell with integrated DRAM
07/04/2006US7072209 memory element includes a sense structure, a tunnel barrier adjacent the sense structure, and a pinned structure adjacent the tunnel barrier on a side opposite the sense structure; pinned structure includes an antiferromagnetic structure adjacent a ferromagnetic structure; minimized texture variations
07/04/2006US7072208 Vortex magnetic random access memory
07/04/2006US7072207 Thin film magnetic memory device for writing data of a plurality of bits in parallel
07/04/2006US7072206 Semiconductor integrated device
07/04/2006US7072205 Floating-body DRAM with two-phase write
07/04/2006US7072204 Semiconductor memory device having dummy word line
07/04/2006US7072203 Hybrid switch cell and memory device using the same
07/04/2006US7072202 Semiconductor device having a power down mode
07/04/2006US7071771 Current difference divider circuit
07/04/2006US7071748 Charge pump clock for non-volatile memories
07/04/2006US7071729 Dual-purpose shift register
07/04/2006US7071420 Methods and apparatus for a flexible circuit interposer
07/04/2006US7071009 MRAM arrays with reduced bit line resistance and method to make the same
07/04/2006US7071008 Multi-resistive state material that uses dopants
06/2006
06/29/2006WO2006069356A2 A method, apparatus, and system for partial memory refresh
06/29/2006WO2006068916A1 System and method for use of on-chip non-volatile memory write cache
06/29/2006WO2006067852A1 Synchronization type storage device and control method thereof
06/29/2006WO2006066890A1 Bipolar reading technique for a memory cell having an electrically floating body transistor
06/29/2006WO2005067497A3 Radiation tolerant sram bit
06/29/2006US20060143489 System and method for power saving delay locked loop control
06/29/2006US20060141679 Vertically stacked field programmable nonvolatile memory and method of fabrication
06/29/2006US20060141640 MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
06/29/2006US20060140043 Flash memory architecture for optimizing performance of memory having multi-level memory cells
06/29/2006US20060140018 Semiconductor memory device
06/29/2006US20060140017 Ferroelectric memory reference generator systems using staging capacitors
06/29/2006US20060140014 Static random access memory device having a memory cell with multiple bit elements
06/29/2006US20060140008 Storage apparatus
06/29/2006US20060140002 Flash memory device having multi-level cell and reading and programming method thereof
06/29/2006US20060139996 Dynamic data restore in thyristor-based memory device
06/29/2006US20060139995 One time programmable memory
06/29/2006US20060139994 Method of programming, reading and erasing memory-diode in a memory-diode array
06/29/2006US20060139993 Biosensor and sensing cell array using the same
06/29/2006US20060139992 Magnetic memory device and method
06/29/2006US20060139991 Magnetic memory device, method for writing magnetic memory device and method for reading magnetic memory device
06/29/2006US20060139990 Pre-written volatile memory cell
06/29/2006US20060139989 Integration of 1T1R CBRAM memory cells
06/29/2006US20060139988 Isolation device over field in a memory device
06/29/2006US20060139987 Nonvolatile ferroelectric memory device and control method thereof
06/29/2006US20060139986 Nonvolatile ferroelectric memory device
06/29/2006US20060139844 Logical calculation circuit, logical calculation device, and logical calculation method
06/29/2006US20060139817 Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it
06/29/2006US20060139101 Step-down circuit with stabilized voltage
06/29/2006US20060138576 Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same
06/29/2006US20060138505 Tunneling magnetoresistance device with high magnetoimpedance (MI) effect
06/29/2006US20060138502 Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using same
06/29/2006DE19916599B4 Ferroelektrischer SWL-Speicher und Schaltung zum Ansteuern desselben The same SWL ferroelectric memory circuit for driving and
06/29/2006DE19738726B4 Datenausgabe-bezogener Schaltkreis für Halbleiterspeichervorrichtung mit Eignung für Hochgeschwindigkeitsbetrieb Data-related circuit for semiconductor memory device with suitability for high-speed operation
06/29/2006DE10301092B4 MRAM-Speicherzelle MRAM memory cell
06/29/2006DE102005061375A1 NOR flash memory device for use in cell phone, has single sense amplifier to detect most and least significant bits of data stored in memory cell
06/29/2006DE102005060385A1 Speicherschaltungsempfänger, die durch eine Freigabeschaltung aktiviert werden Memory circuit receiver, which are activated by an enable circuit
06/29/2006DE102005016597B3 Electric component for pre-charging of bit line has first bit line and second bit line whereby bit lines are connected to resistors through switches so resistance of resistor is controllable through pre-determined resistance value
06/29/2006DE10112281B4 Leseverstärkeranordnungen für eine Halbleiterspeichereinrichtung Sense amplifier arrangement for a semiconductor memory device
06/29/2006DE10110274B4 Integrierter Speicher mit mehreren Speicherzellenfeldern Integrated memory having a plurality of memory cell arrays
06/28/2006EP1673783A1 Magnetic field shaping conductor
06/28/2006EP1673782A2 Mram array with segmented word and bit lines
06/28/2006EP1673780A2 Ac sensing for a resistive memory
06/28/2006EP1497730B1 Methods for storing data in non-volatile memories
06/28/2006CN1795511A 信号完整性检查电路 Signal integrity checking circuit
06/28/2006CN1795510A Memory with charge storage locations
06/28/2006CN1795509A Sense amplifier systems and a matrix-addressable memory device provided therewith
06/28/2006CN1795508A Method for reducing power consumption when sensing a resistive memory
06/28/2006CN1794454A 低电压半导体存储器装置 Low voltage of the semiconductor memory device
06/28/2006CN1794354A Design of high density storage
06/28/2006CN1794353A Apparatus and method for receiving inputted signal
06/28/2006CN1794352A Method of increasing packing density of phase change storage and its implementing circuit
06/28/2006CN1262066C Timer circuit and semiconductor memory incorporating the timer circuit
06/28/2006CN1262015C Ultra-late programming ROM and method of manufacture
06/28/2006CN1262012C 半导体集成电路 The semiconductor integrated circuit
06/28/2006CN1262000C Self-aligned magnetic clad write line and manufacturing method thereof
06/28/2006CN1261946C Semiconductor memory and controlling method thereof
06/28/2006CN1261945C Reduced multi-port register unit
06/27/2006US7069406 Double data rate synchronous SRAM with 100% bus utilization
06/27/2006US7069377 Scratch control memory array in a flash memory device