Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2006
08/03/2006US20060171194 Programmable matrix array with chalcogenide material
08/03/2006US20060171193 Semiconductor storage device
08/03/2006US20060171192 Semiconductor storage device
08/03/2006US20060171191 Memory architecture of display device and memory writing method for the same
08/03/2006US20060171190 Systems and methods for accessing memory cells
08/03/2006US20060171189 Sram cell using tunnel current loading devices
08/03/2006US20060171188 Memory cell with stability switch for stable read operation and improved write operation
08/03/2006US20060171187 Rectifying charge storage memory circuit
08/03/2006US20060171186 Ferro-electric memory device
08/03/2006US20060170453 Low latency multi-level communication interface
08/03/2006DE112004001864T5 Verfahren und Vorrichtung zur Verbesserung der Stabilität einer 6-Transistor-CMOS-SRAM-Zelle A method and apparatus for improving the stability of a 6-transistor CMOS SRAM cell
08/03/2006DE102005008391B3 Ferro electric RAM-memory cell manufacturing method, involves filling trenches with conductive electrode material to form capacitor electrodes so that electrodes in trenches with areas of ferroelectric layers form ferroelectric capacitor
08/03/2006DE102005004425A1 Comparator-receiver circuit arrangement for e.g. static RAM, has one transistor whose control input is connected with control inputs of another two transistors by alternating current-coupling device
08/03/2006DE102005003475A1 Neuartige Anbindung organischer Moleküle an eine Siliziumoberfläche zur Herstellung von Speicherelementen mit organischen Bestandteilen Novel attachment of organic molecules on a silicon surface for the production of memory elements with organic ingredients
08/03/2006DE102005003461A1 Integrated semiconductor memory e.g. dynamic RAM, for storing digital information, has selection transistor, where capacitor electrode connected to complementary secondary bit line and is not connected to transistor
08/03/2006CA2596128A1 Magnetic memory composition and method of manufacture
08/02/2006EP1686591A1 A memory device with a ramp-like voltage biasing structure based on a current generator
08/02/2006EP1685571A2 A method circuit and system for determining a reference voltage
08/02/2006EP1685570A1 Refresh for dynamic cells by identifying those with weak retention and refreshing them more often than those with normal retention
08/02/2006EP1685569A1 Phase change memory, phase change memory assembly, phase change memory cell, 2d phase change memory cell array, 3d phase change memory cell array and electronic component
08/02/2006EP1518245A4 Enhanced read-write methods for negative differential resistance (ndr) based memory device
08/02/2006EP1155413B1 Dual threshold voltage sram cell with bit line leakage control
08/02/2006EP1038299B1 Low switching field magnetic tunneling junction usable for multi-state magnetic memory cell
08/02/2006CN1813312A Programming of a memory with discrete charge storage elements
08/02/2006CN1813311A Variable gate bias for a reference transistor in a non-volatile memory
08/02/2006CN1811990A Method of dynamically controlling program verify levels in multilevel memory cells
08/02/2006CN1811988A Storage unit array offset method and semiconductor storage device
08/02/2006CN1811987A Bit line voltage supply circuit in semiconductor memory device and voltage supplying method therefor
08/02/2006CN1811986A Memory cell power switching circuit in semiconductor memory device and method for applying memory cell power voltage
08/02/2006CN1811985A Memory device
08/02/2006CN1811984A Spin-injection magnetic random access memory and write-in method
08/02/2006CN1811979A Improved sensing amplifier
08/02/2006CN1267997C Semiconductor storage device
08/02/2006CN1267994C Semiconductor device
08/02/2006CN1267928C Semiconductor memory device with control for auxiliary word lines for memory cell selection
08/02/2006CN1267899C Magnetic recording element
08/02/2006CN1267804C Memory systems and methods of operating the same
08/02/2006CN1267800C High precision voltage regulation circuit for programming multievel flash memory
08/01/2006US7086022 Semiconductor integrated circuit using the same
08/01/2006US7085974 Semiconductor device, method of testing the same and electronic instrument
08/01/2006US7085972 System for testing a group of functionally independent memories and for replacing failing memory words
08/01/2006US7085946 Backup memory control unit with reduced current consumption having normal self-refresh and unsettled modes of operation
08/01/2006US7085912 Sequential nibble burst ordering for data
08/01/2006US7085882 SRAM-compatible memory and method of driving the same
08/01/2006US7085881 Semiconductor memory device
08/01/2006US7085192 Semiconductor integrated circuit device
08/01/2006US7085188 Semiconductor memory device, control method thereof, and control method of semiconductor device
08/01/2006US7085187 Semiconductor storage device
08/01/2006US7085186 Method for hiding a refresh in a pseudo-static memory
08/01/2006US7085185 Circuit and method for controlling an access to an integrated memory
08/01/2006US7085179 Integrated circuit having a non-volatile memory cell transistor as a fuse device
08/01/2006US7085175 Word line driver circuit for a static random access memory and method therefor
08/01/2006US7085174 Semiconductor memory device with current driver providing bi-directional current to data write line
08/01/2006US7085169 Flash memory device capable of reducing read time
08/01/2006US7085167 Methods for programming user data and confirmation information in nonvolatile memory devices
08/01/2006US7085165 Method and apparatus for reducing read disturb in non-volatile memory
08/01/2006US7085164 Programming methods for multi-level flash EEPROMs
08/01/2006US7085163 Gate voltage regulation system for a non-volatile memory cells programming and/or soft programming phase
08/01/2006US7085162 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
08/01/2006US7085161 Non-volatile semiconductor memory with large erase blocks storing cycle counts
08/01/2006US7085160 NAND flash memory and blank page search method therefor
08/01/2006US7085158 Nonvolatile semiconductor memory device and one-time programming control method thereof
08/01/2006US7085157 Nonvolatile memory device and semiconductor device
08/01/2006US7085156 Semiconductor memory device and method of operating same
08/01/2006US7085155 Secured phase-change devices
08/01/2006US7085154 Device and method for pulse width control in a phase change memory device
08/01/2006US7085153 Semiconductor memory cell, array, architecture and device, and method of operating same
08/01/2006US7085152 Memory system segmented power supply and control
08/01/2006US7085151 Storage device having a resistance measurement system
08/01/2006US7085150 Methods for enhancing performance of ferroelectic memory with polarization treatment
08/01/2006US7085148 Semiconductor memory device
08/01/2006US7084951 Combined media- and ink-supply cartridge
08/01/2006US7084690 Semiconductor integrated circuit device
08/01/2006US7084686 System and method for open-loop synthesis of output clock signals having a selected phase relative to an input clock signal
08/01/2006US7084675 Circuit and method of generating a boosted voltage
08/01/2006US7084673 Output driver with pulse to static converter
08/01/2006US7084614 Reference voltage generator
08/01/2006US7084469 Magnetic storage device comprising memory cells including magneto-resistive elements
08/01/2006US7084468 Hybrid ferromagnet/semiconductor spin device and fabrication method therof
08/01/2006US7084446 Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric
08/01/2006US7084437 Semiconductor device
08/01/2006US7083988 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
08/01/2006US7083264 Micro-electromechanical liquid ejection device with motion amplification
08/01/2006US7083261 Printer incorporating a microelectromechanical printhead
08/01/2006CA2534330A1 Read and/or write detection system for an asynchronous memory array
08/01/2006CA2250504C Multibit single cell memory having tapered contact
07/2006
07/27/2006WO2006078505A2 A non-volatile memory cell comprising a dielectric layer and a phase change material in series
07/27/2006WO2006077553A1 Magnetic memory system using mram-sensor
07/27/2006WO2006077549A1 Magnetic rom information carrier with additional stabilizing layer
07/27/2006WO2006047089A3 Memory output data systems and methods with feedback
07/27/2006US20060166443 Multi-state NROM device
07/27/2006US20060166430 Conductive memory stack with non-uniform width
07/27/2006US20060165299 Semiconductor memory apparatus
07/27/2006US20060164906 Semiconductor integrated circuit and IC card
07/27/2006US20060164897 Semiconductor storage device having page copying function
07/27/2006US20060164882 Storage controller using vertical memory
07/27/2006US20060164881 Static semiconductor memory device
07/27/2006US20060164880 Switching element method of driving switching element rewritable logic integrated circuit and memory
07/27/2006US20060164879 Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry
07/27/2006US20060164878 Data reading method, data writing method, and semiconductor memory device