Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2008
05/22/2008US20080117680 Non-Volatile Memory and Semiconductor Device
05/22/2008US20080117678 Memory with a core-based virtual ground and dynamic reference sensing scheme
05/22/2008US20080117677 Vertical Nonvolatile Memory Cell, Array, and Operation
05/22/2008US20080117676 Method for preventing memory from generating leakage current and memory thereof
05/22/2008US20080117673 Gated Diode Nonvolatile Memory Operation
05/22/2008US20080117672 Gated Diode Nonvolatile Memory Structure with Diffusion Barrier Structure
05/22/2008US20080117671 Memory devices using carbon nanotube (cnt) technologies
05/22/2008US20080117670 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
05/22/2008US20080117669 Memory readout circuit and phase-change memory device
05/22/2008US20080117668 Phase change memory device having a uniform set and reset current
05/22/2008US20080117667 Resistive memory including bipolar transistor access devices
05/22/2008US20080117666 Memory with increased write margin bitcells
05/22/2008US20080117665 Two-port sram having improved write operation
05/22/2008US20080117664 Resistance memory element and nonvolatile semiconductor memory
05/22/2008US20080117663 Resistive memory including refresh operation
05/22/2008US20080117661 Method, apparatus and system providing memory cells associated with a pixel array
05/22/2008US20080117254 Wide Format Pagewidth Inkjet Printer
05/22/2008US20080116509 Multi-State Non-Volatile Integrated Circuit Memory Systems that Employ Dielectric Storage Elements
05/22/2008US20080116502 Non-volatile memory with epitaxial regions for limiting cross coupling between floating gates
05/22/2008US20080116442 Phase change memory cell having a sidewall contact
05/21/2008EP1923891A1 Data storage device having magnetic domain wall motion and method of forming the same
05/21/2008EP1922733A1 Remanent volatile memory cell
05/21/2008EP1922623A2 Front memory storage system and method
05/21/2008EP1476877B1 Programmable conductor random access memory and method for sensing same
05/21/2008EP1342243B8 Memory device and method for the operation of the same
05/21/2008DE102007050424A1 DRAM mit geringem Energieverbrauch und Verfahren zum Steuern desselben DRAM thereof with low power consumption and methods for taxes
05/21/2008DE102007049927A1 Bitleitungs-Dummy-Kernzelle und Verfahren zum Herstellen einer Bitleitungs-Dummy-Kernzelle Bit line dummy core cell and method for fabricating a bit line dummy core cell
05/21/2008CN101185141A Semiconductor storage apparatus and semiconductor integrated circuit incorporating the same
05/21/2008CN101183705A Resistive random access memory having a solid solution layer and method of manufacturing the same
05/21/2008CN101183704A Tunneling magnetoresistance device, its manufacture method, magnetic head and magnetic memory using tmr device
05/21/2008CN101183681A Bistable resistance random access memory structure for enhanced retention
05/21/2008CN101183560A Memory including deep power down mode
05/21/2008CN101183559A Refresh period adjustment technique for dynamic random access memories and integrated circuit devices incorporating embedded dram
05/21/2008CN101183558A Novel word-line driver design for pseudo two-port memories
05/21/2008CN100389507C Sulfur compound random access internal memory and manufacturing method thereof
05/21/2008CN100389469C Semiconductor memory device
05/21/2008CN100389468C Semiconductor memory with double data transfer rate and its operation method
05/20/2008USRE40326 Single chip frame buffer and graphics accelerator
05/20/2008US7376801 Power saving data storage circuit, data writing method in the same, and data storage device
05/20/2008US7376041 Semiconductor memory device and data read and write method of the same
05/20/2008US7376039 Circuit and method for preserving data in sleep mode of semiconductor device using test scan chain
05/20/2008US7376035 Semiconductor memory device for performing refresh operation and refresh method thereof
05/20/2008US7376030 Memory sensing circuit and method for low voltage operation
05/20/2008US7376028 Semiconductor memory device and method for reading semiconductor memory device
05/20/2008US7376025 Method and apparatus for semiconductor device repair with reduced number of programmable elements
05/20/2008US7376022 Method using a one-time programmable memory cell
05/20/2008US7376021 Data output circuit and method in DDR synchronous semiconductor device
05/20/2008US7376018 Non-volatile memory device with single transistor memory cell
05/20/2008US7376017 Flash memory device and program method thereof
05/20/2008US7376016 Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage
05/20/2008US7376014 Highly reliable NAND flash memory using five side enclosed floating gate storage elements
05/20/2008US7376013 Compact virtual ground diffusion programmable ROM array architecture, system and method
05/20/2008US7376012 Memory system and data writing method
05/20/2008US7376011 Method and structure for efficient data verification operation for non-volatile memories
05/20/2008US7376009 Semiconductor memory device which stores plural data in a cell
05/20/2008US7376008 SCR matrix storage device
05/20/2008US7376007 Non-volatile magnetic memory device
05/20/2008US7376006 Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
05/20/2008US7376005 Thin film magnetic memory device including memory cells having a magnetic tunnel junction
05/20/2008US7376004 Increased magnetic memory array sizes and operating margins
05/20/2008US7376003 Magnetic random access memory
05/20/2008US7376002 Semiconductor memory device
05/20/2008US7376001 Row circuit ring oscillator method for evaluating memory cell performance
05/20/2008US7376000 Memory cells utilizing metal-to-metal capacitors to reduce susceptibility to single event upsets
05/20/2008US7375999 Low equalized sense-amp for twin cell DRAMs
05/20/2008US7375998 Ferroelectric random access memory circuits for guarding against operation with out-of-range voltages and methods of operating same
05/20/2008US7375746 Forming a manipulated image using a printed medium having an image manipulation instruction
05/20/2008US7375714 Active-matrix driving device, electrostatic capacitance detection device, and electronic equipment
05/20/2008US7375565 Delay locked loop in semiconductor memory device
05/20/2008US7375544 Semiconductor apparatus having logic level decision circuit and inter-semiconductor apparatus signal transmission system
05/20/2008US7375399 Semiconductor memory device
05/20/2008US7375388 Device having improved surface planarity prior to MRAM bit material deposition
05/20/2008US7374954 Ferroelectric register, and method for manufacturing capacitor of the same
05/15/2008WO2008057822A2 Nonvolatile memory with variable read threshold
05/15/2008WO2008056559A1 Semiconductor integrated circuit
05/15/2008WO2008056351A1 Programming a nand flash memory with reduced program disturb
05/15/2008WO2008016951A3 Method and apparatus for hierarchical bit line bias bus for block selectable memory array
05/15/2008US20080112248 Refresh period adjustment technique for dynamic random access memories (dram) and integrated circuit devices incorporating embedded dram
05/15/2008US20080112245 Bit line dummy core-cell and method for producing a bit line dummy core-cell
05/15/2008US20080112238 Hybrid flash memory device and method for assigning reserved blocks thereof
05/15/2008US20080112232 Method and Apparatus for Fast Programming of Nonvolatile Memory
05/15/2008US20080112229 Sense Amplifiers Including Multiple Precharge Circuits and Associated Memory Devices and Sensing Methods
05/15/2008US20080112227 Non-volatile memory device and programming, reading and erasing methods thereof
05/15/2008US20080112224 Mini flash disk with data security function
05/15/2008US20080112221 Multi-bit flash memory device including memory cells storing different numbers of bits
05/15/2008US20080112219 Method and Enhanced SRAM Redundancy Circuit for Reducing Wiring and Required Number of Redundant Elements
05/15/2008US20080112218 Semiconductor memory device and write control method thereof
05/15/2008US20080112217 Read window in chalcogenide semiconductor memories
05/15/2008US20080112216 Magnetic memory device
05/15/2008US20080112215 Storage element and memory
05/15/2008US20080112214 Electronic assembly having magnetic tunnel junction voltage sensors and method for forming the same
05/15/2008US20080112213 Novel word-line driver design for pseudo two-port memories
05/15/2008US20080112212 Circuits for improving read and write margins in multi-port SRAMS
05/15/2008US20080112211 Phase changing memory device
05/15/2008US20080112210 Semiconductor memory device
05/15/2008US20080112209 Semiconductor memory device having a three-dimensional cell array structure
05/15/2008US20080112208 Semiconductor memory device and method for biasing dummy line therefor
05/15/2008US20080112207 Solid electrolyte memory device
05/15/2008US20080112206 Method of selecting operating characteristics of a resistive memory device
05/15/2008US20080111866 Nozzle arrangement with a top wall portion having etchant holes therein
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