| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 06/25/2008 | EP1936633A1 Information storage devices using movement of magnetic domain wall and methods of manufacturing the information storage device |
| 06/25/2008 | EP1936631A1 Memory device, memory controller and memory system |
| 06/25/2008 | EP1936630A1 Memory device, memory controller and memory system |
| 06/25/2008 | EP1936629A1 Three-dimensional magnetic memory |
| 06/25/2008 | EP1936627A1 Reduction of power consumption of an integrated electronic system comprising distinct static random access storage resources |
| 06/25/2008 | EP1935029A2 Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer |
| 06/25/2008 | EP1934986A1 Method for increasing storage capacity of a memory device |
| 06/25/2008 | EP1934985A2 Method and apparatus for programming/erasing a non-volatile memory |
| 06/25/2008 | EP1934984A2 Nanowire magnetic random access memory |
| 06/25/2008 | EP1934982A2 Dram density enhancements |
| 06/25/2008 | EP1934981A2 Low power memory control circuits and methods |
| 06/25/2008 | EP1745488A4 Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same |
| 06/25/2008 | EP1476849B1 Electromagnetic transponder with a programmable code |
| 06/25/2008 | CN101208753A Method of achieving wear leveling in flash memory using relative grades |
| 06/25/2008 | CN101207180A Multi-layer electrode structure |
| 06/25/2008 | CN101207179A Memory cell and manufacturing method thereof |
| 06/25/2008 | CN101207178A Phase-change storage element and manufacturing method thereof |
| 06/25/2008 | CN101207176A Information storage devices using movement of magnetic domain wall and methods of manufacturing the same |
| 06/25/2008 | CN101207149A Phase change random access memory device with transistor, and method for fabricating a memory device |
| 06/25/2008 | CN101207129A Semiconductor memory device |
| 06/25/2008 | CN101207120A Semiconductor integrated circuit and manufacturing method therefor |
| 06/25/2008 | CN101206919A Semiconductor integrated circuit and manufacturing method therefor |
| 06/25/2008 | CN101206918A Semiconductor memory device |
| 06/25/2008 | CN101206917A Semiconductor integrated circuit and method of operating the same |
| 06/25/2008 | CN101206916A Memory device, memory controller and memory system |
| 06/25/2008 | CN101206915A Semiconductor device |
| 06/25/2008 | CN101206914A Information storage devices using magnetic domain wall movement and methods of manufacturing the same |
| 06/25/2008 | CN101206913A 三维磁存储器 Three-dimensional magnetic memory |
| 06/25/2008 | CN100397677C Phase change type multi-digit quasi-memory cell and its operating method |
| 06/25/2008 | CN100397676C Characterization emthod for convertable phase change material electric property |
| 06/25/2008 | CN100397675C Improved unit structure for reducing phase transition memory writing current, and method thereof |
| 06/25/2008 | CN100397674C Magnetic controlled resistance storage device with magnetic field attenuation layer |
| 06/25/2008 | CN100397561C Process for preparing nano phase change storage device unit |
| 06/25/2008 | CN100397529C Power-saving static storage device control circuit |
| 06/24/2008 | US7392372 Method for memory initialization involves detecting primary quantity of memories and setting optimum parameters based on hardware information of memories |
| 06/24/2008 | US7392339 Partial bank DRAM precharge |
| 06/24/2008 | US7391667 Semiconductor integrated circuit |
| 06/24/2008 | US7391666 DRAM power bus control |
| 06/24/2008 | US7391662 Semiconductor memory device with redundancy circuit |
| 06/24/2008 | US7391655 Data processing system and nonvolatile memory |
| 06/24/2008 | US7391654 Memory block erasing in a flash memory device |
| 06/24/2008 | US7391651 Method for programming NAND flash memory device and page buffer performing the same |
| 06/24/2008 | US7391649 Page buffer and non-volatile memory device including the same |
| 06/24/2008 | US7391648 Low voltage sense amplifier for operation under a reduced bit line bias voltage |
| 06/24/2008 | US7391646 Non-volatile memory and method with control gate compensation for source line bias errors |
| 06/24/2008 | US7391645 Non-volatile memory and method with compensation for source line bias errors |
| 06/24/2008 | US7391644 Phase-changeable memory device and read method thereof |
| 06/24/2008 | US7391643 Semiconductor memory device and writing method thereof |
| 06/24/2008 | US7391642 Multilevel programming of phase change memory cells |
| 06/24/2008 | US7391641 Multi-layered magnetic memory structures |
| 06/24/2008 | US7391640 2-transistor floating-body dram |
| 06/24/2008 | US7391639 Memory device and method for reading data |
| 06/24/2008 | US7391435 Monolithic integrated circuit with a printhead interface |
| 06/24/2008 | US7391255 Semiconductor phase adjustment system module |
| 06/24/2008 | US7390421 Method for forming inkjet nozzles having a coiled thermal actuator mechanism |
| 06/19/2008 | WO2008072649A1 Logic circuit, address decoder circuit, and semiconductor storage device |
| 06/19/2008 | WO2008072421A1 Magnetoresistance effect element and mram |
| 06/19/2008 | WO2008072354A1 Compiled memory, asic chip, and layout method for compiled memory |
| 06/19/2008 | WO2008070978A1 Memory system and method with serial and parallel modes |
| 06/19/2008 | WO2008050045A3 Magnetic device with perpendicular magnetisation and comprising an interaction-compensating intermediate layer |
| 06/19/2008 | WO2008021912A3 Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches |
| 06/19/2008 | WO2007143498A3 Non-volatile memory embedded in a conventional logic process and methods for operating same |
| 06/19/2008 | US20080145702 Phase change layers having different crystal lattices in single layer, methods of forming the same, phase change memory devices and methods of manufacturing the same |
| 06/19/2008 | US20080144394 Nonvolatile semiconductor memory having suitable crystal orientation |
| 06/19/2008 | US20080144392 Methods for reducing write time in nonvolatile memory devices and related devices |
| 06/19/2008 | US20080144387 Flash memory device and method of erasing flash memory device |
| 06/19/2008 | US20080144378 Nonvolatile semiconductor memory device having reduced electrical stress |
| 06/19/2008 | US20080144367 Sensing device for floating body cell memory and method thereof |
| 06/19/2008 | US20080144366 Dual-bit memory device having trench isolation material disposed near bit line contact areas |
| 06/19/2008 | US20080144365 Semiconductor integrated circuit and manufacturing method therefor |
| 06/19/2008 | US20080144364 Multi-bit electro-mechanical memory device and method of manufacturing the same |
| 06/19/2008 | US20080144363 Method of testing pram device |
| 06/19/2008 | US20080144362 Asymmetrical memory cells and memories using the cells |
| 06/19/2008 | US20080144361 Static random access memory architecture |
| 06/19/2008 | US20080144360 Semiconductor device |
| 06/19/2008 | US20080144359 Semiconductor memory and method of writing data into the semiconductor memory |
| 06/19/2008 | US20080144358 Read state retention circuit and method |
| 06/19/2008 | US20080144357 Method for sensing a signal in a two-terminal memory array having leakage current |
| 06/19/2008 | US20080144356 Nonvolatile memory devices having multi-filament variable resistivity memory cells therein |
| 06/19/2008 | US20080144355 Dielectric Antifuse for Electro-Thermally Programmable Device |
| 06/19/2008 | US20080144354 Resistive memory array using P-I-N diode select device and methods of fabrication thereof |
| 06/19/2008 | US20080144353 Method, Apparatus and Computer Program Product for Read Before Programming Process on Programmable Resistive Memory Cell |
| 06/19/2008 | US20080144352 Ferroelectric memory device and method of manufacturing the same |
| 06/19/2008 | US20080144351 Methods and systems for accessing a ferroelectric memory |
| 06/19/2008 | US20080144349 Memory Device, Semiconductor Device, and Driving Method Thereof |
| 06/19/2008 | US20080144233 Tunnel magnetoresistance effect device, and a portable personal device |
| 06/19/2008 | DE102007059547A1 Schaltung und Verfahren zum Unterdrücken eines gateinduzierten Drainleckstroms Circuit and method for suppressing a gate induced drain leakage current |
| 06/19/2008 | DE102006059743A1 Halbleiter-Bauelement, insbesondere DRAM, mit mehreren einmal-programmierbaren Elementen Semiconductor component, in particular DRAM, having a plurality of one-time programmable elements |
| 06/18/2008 | EP1933326A1 Semiconductor integrated circuit |
| 06/18/2008 | EP1932158A1 Memory with output control |
| 06/18/2008 | EP1932157A1 Multiple independent serial link memory |
| 06/18/2008 | CN101203919A Fast read port for register file |
| 06/18/2008 | CN101202540A Oscillator and design method thereof |
| 06/18/2008 | CN101202327A Phase change memory having a sidewall contact |
| 06/18/2008 | CN101202325A Magnetic storage element and memory |
| 06/18/2008 | CN101202302A Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors |
| 06/18/2008 | CN101202104A Circuit and method for a high speed dynamic ram |
| 06/18/2008 | CN101202103A Data copying apparatus, data copying system, recording medium and data copying method |
| 06/18/2008 | CN101202100A Composite store cell |
| 06/18/2008 | CN100395843C High speed low power consumption current sensitive amplifier |