Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2008
05/29/2008US20080123401 Damascene metal-insulator-metal (MIM) device with improved scaleability
05/29/2008US20080123400 Integrated circuit including circuitry to perform write and erase operations
05/29/2008US20080123399 Non-volatile memory devices, method of manufacturing and method of operating the same
05/29/2008US20080123398 Memory cell with trigger element
05/29/2008US20080123397 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
05/29/2008US20080123395 Nonvolatile memory device and control method thereof
05/29/2008US20080123394 Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same
05/29/2008US20080123393 Nonvolatile semiconductor memory device and method of writing into the same
05/29/2008US20080123392 Nonvolatile semiconductor memory device and method of writing into the same
05/29/2008US20080123391 Memory system and resistive memory device including buffer memory for reduced overhead
05/29/2008US20080123390 Non-volatile memory device and method of fabricating the same
05/29/2008US20080122500 Reset circuit and system having reset circuit
05/29/2008US20080122008 Memory cell
05/29/2008US20080121976 Non-volatile memory cell devices and methods
05/29/2008US20080121969 Non-volatile memory cell device and methods
05/29/2008US20080121961 Transistor and memory cell array
05/29/2008US20080121945 Magnetic switching element and a magnetic memory
05/29/2008US20080121860 Semiconductor memory cell and method of forming same
05/29/2008DE10351030B4 Speicherzelle, DRAM und Verfahren zur Herstellung einer Transistorstruktur in einem Halbleitersubstrat Memory cell, DRAM and methods of making a transistor structure in a semiconductor substrate,
05/29/2008DE102007052840A1 Vorrichtung und Verfahren zum Umschalten einer Vorrichtung in einen Leistungssparmodus Apparatus and method for switching a device in a power save mode
05/29/2008DE102007046954A1 Steuerung der Spannungsversorgung einer Speicherzelle aufgrund von Fehlerermittlung Controlling the voltage supply of a memory cell due to error detection
05/29/2008DE102007040140A1 Statischer Speicher mit wahlfreiem Zugriff mit Dünnoxidkondensator Static random access with Dünnoxidkondensator
05/29/2008DE10200685B4 Verfahren zum Speichern von Daten und zum Zugreifen auf die gespeicherten Daten A method for storing data and for accessing the stored data
05/29/2008DE102006054781A1 Memory device, has word line-driver that is provided for emitting word line-signal, if driver is activated by word line-trigger signal, and word line that is coupled for receiving and supplying word line signal to number of memory cells
05/29/2008DE10154648B4 Subwortleitungstreiber Subwortleitungstreiber
05/29/2008DE10122075B4 Halbleiterspeicherzelle und deren Herstellungsverfahren A semiconductor memory cell and its manufacturing method
05/28/2008EP1924999A1 Storage element with clear operation and method thereof
05/28/2008EP1924998A2 Sram cell with separate read-write circuitry
05/28/2008EP1924997A1 Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
05/28/2008EP1714317B1 Optical devices comprising thin ferroelectric films
05/28/2008CN201066587Y Data writing storage device
05/28/2008CN101189680A System and method for hidden-refresh rate modification
05/28/2008CN101188271A Data storage device having magnetic domain wall motion and method of forming the same
05/28/2008CN101188235A Layered integrated circuit memory
05/28/2008CN101188141A Resistive memory including refresh operation
05/28/2008CN101188140A Resistive memory including bipolar transistor access devices
05/28/2008CN101188139A Resistive memory including selective refresh operation
05/28/2008CN101188138A Dynamic semiconductor storage device and method for operating same
05/28/2008CN101188137A Semiconductor memory device including a write recovery time control circuit
05/28/2008CN101188136A Clock synchronous semiconductor memory device
05/28/2008CN100390903C Semiconductor memory device and method for correcting memory cell data
05/28/2008CN100390902C Semiconductor memory device and method for correctnig reference unit
05/28/2008CN100390901C Programing method for ferroelectric dynamic random access single-tube unit array
05/28/2008CN100390900C Semiconductor memory device
05/28/2008CN100390899C MRAM without isolation devices
05/28/2008CN100390898C Reluctance memory made on common base plate, and its operation method
05/28/2008CN100390897C Megnetic memory and its manufacturing method
05/28/2008CN100390896C Bitline load and precharge structure for SRAM memory
05/28/2008CN100390895C Word line electronic drive circuit of memory matrix and memory equipment
05/28/2008CN100390700C Tamper-resistant packaging and approach using magnetically-set data
05/27/2008US7380149 Information processing device
05/27/2008US7380076 Information processing apparatus and method of accessing memory
05/27/2008US7380048 System and method for managing data in memory for reducing power consumption
05/27/2008US7379374 Virtual ground circuit for reducing SRAM standby power
05/27/2008US7379367 Memory controller and semiconductor comprising the same
05/27/2008US7379366 Thin film magnetic memory device capable of conducting stable data read and write operations
05/27/2008US7379350 Semiconductor memory device operating using read only memory data
05/27/2008US7379346 Erase inhibit in non-volatile memories
05/27/2008US7379345 Nonvolatile semiconductor memory device that achieves speedup in read operation
05/27/2008US7379343 Time-dependent compensation currents in non-volatile memory read operations
05/27/2008US7379342 Flash memory device being programmed and verified using voltage higher than target/read threshold voltage to achieve uniform threshold voltage characteristic
05/27/2008US7379341 Loading data with error detection in a power on sequence of flash memory device
05/27/2008US7379340 Sense amplifier circuit in non-volatile semiconductor memory comprising a boosting capacitor for boosting the potential at sense node
05/27/2008US7379339 Device and procedure for measuring memory cell currents
05/27/2008US7379338 Method and system for regulating a program voltage value during multilevel memory device programming
05/27/2008US7379336 Integrated DRAM-NVRAM multi-level memory
05/27/2008US7379335 Nonvolatile semiconductor memory device and a method for programming NAND type flash memory
05/27/2008US7379333 Page-buffer and non-volatile semiconductor memory including page buffer
05/27/2008US7379332 Systems-on-chips including programmed memory cells and programmable and erasable memory cells
05/27/2008US7379331 Nonvolatile semiconductor memory including redundant cell for replacing defective cell
05/27/2008US7379330 Retargetable memory cell redundancy methods
05/27/2008US7379329 Addressing architecture for perpendicular giant magnetoresistance memory
05/27/2008US7379328 Semiconductor device
05/27/2008US7379327 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
05/27/2008US7379326 Large-capacity magnetic memory using carbon nano-tube
05/27/2008US7379325 Non-imprinting memory with high speed erase
05/27/2008US7379324 Storage device
05/27/2008US7379323 Memory with a refresh portion for rewriting data
05/27/2008US7379322 Amorphous high-k thin film and manufacturing method thereof
05/27/2008US7379321 Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect
05/27/2008US7379320 Method for operating an MFIS ferroelectric memory array
05/27/2008US7379319 Semiconductor integrated circuit device
05/27/2008US7379318 Semiconductor integrated circuit device and method for manufacturing the same
05/27/2008US7378863 Synchronous semiconductor device, and inspection system and method for the same
05/27/2008US7378716 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
05/27/2008US7378699 Magnetic head having a magnetoresistive element and highly polarized spin injection layer
05/27/2008US7378698 Magnetic tunnel junction and memory device including the same
05/27/2008US7377706 Print media roll and ink supply cartridge
05/22/2008WO2008060984A2 Low energy memory component
05/22/2008WO2008040561A3 System and method for providing content-addressable magnetoresistive random access memory cells
05/22/2008WO2008016419A3 Mixed-use memory array and method for use therewith
05/22/2008WO2007149677A3 Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
05/22/2008US20080119027 Vertically stacked field programmable nonvolatile memory and method of fabrication
05/22/2008US20080119026 Multi-State Non-Volatile Integrated Circuit Memory Systems that Employ Dielectric Storage Elements
05/22/2008US20080118993 Method of manufacturing magnetic random access memory (MRAM)
05/22/2008US20080117701 Method For Compensated Sensing In Non-Volatile Memory
05/22/2008US20080117692 Semiconductor memory device having the operating voltage of the memory cell controlled
05/22/2008US20080117689 Flash memory device with improved program performance and smart card including the same
05/22/2008US20080117688 Flash Memory Devices that Utilize Age-Based Verify Voltages to Increase Data Reliability and Methods of Operating Same
05/22/2008US20080117684 Systems for controlled boosting in non-volatile memory soft programming
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