| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 03/05/2008 | EP1665404A4 Multiple bit chalcogenide storage device |
| 03/05/2008 | CN101138049A Method for operating a passive matrix-addressable ferroelectric or electret memory device |
| 03/05/2008 | CN101136453A Thin film phase change memory cell and its manufacture method |
| 03/05/2008 | CN101136452A Phase variation storage installation and its making method |
| 03/05/2008 | CN101136451A Magnetic random access memory device using current induced switching |
| 03/05/2008 | CN101136426A Semiconductor device and method of manufacturing the same |
| 03/05/2008 | CN101136246A Apparatus and method for realizing data rate converting based on double mouths RAM |
| 03/05/2008 | CN101136245A Semiconductor memory device |
| 03/05/2008 | CN101136244A Semiconductor memory and system |
| 03/05/2008 | CN101136243A Semiconductor device and fabrication method thereof |
| 03/05/2008 | CN101136242A Memory circuit |
| 03/05/2008 | CN101136241A Semiconductor memory device |
| 03/05/2008 | CN100373631C Information processing structure |
| 03/05/2008 | CN100373582C Method for preparing nano phase transformation memory unit capable of reducing write-operation current |
| 03/05/2008 | CN100373501C Semiconductor storage device and semiconductor integrated circuit device |
| 03/04/2008 | USRE40132 Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| 03/04/2008 | US7340668 Low power cost-effective ECC memory system and method |
| 03/04/2008 | US7340584 Sequential nibble burst ordering for data |
| 03/04/2008 | US7340580 Storage device and information processing system |
| 03/04/2008 | US7340560 Methods and devices for accessing a memory using multiple separate address mapped temporary storage areas |
| 03/04/2008 | US7340537 Memory channel with redundant presence detect |
| 03/04/2008 | US7339849 Internal voltage supply circuit of a semiconductor memory device with a refresh mode |
| 03/04/2008 | US7339847 BLEQ driving circuit in semiconductor memory device |
| 03/04/2008 | US7339839 Triggering of IO equilibrating ending signal with firing of column access signal |
| 03/04/2008 | US7339838 Method and apparatus for supplementary command bus |
| 03/04/2008 | US7339835 Non-volatile memory structure and erase method with floating gate voltage control |
| 03/04/2008 | US7339834 Starting program voltage shift with cycling of non-volatile memory |
| 03/04/2008 | US7339833 Non-volatile semiconductor memory device |
| 03/04/2008 | US7339832 Array source line (AVSS) controlled high voltage regulation for programming flash or EE array |
| 03/04/2008 | US7339831 Non-volatile semiconductor memory device allowing efficient programming operation and erasing operation in short period of time |
| 03/04/2008 | US7339829 Ultra low power non-volatile memory module |
| 03/04/2008 | US7339828 Nonvolatile semiconductor memory device with memory cells, each having an FG cell transistor and select gate transistor, and a method of writing data into the same |
| 03/04/2008 | US7339826 Threshold voltage shift in NROM cells |
| 03/04/2008 | US7339823 Nonvolatile semiconductor storage apparatus and method of driving the same |
| 03/04/2008 | US7339821 Dual-gate nonvolatile memory and method of program inhibition |
| 03/04/2008 | US7339820 Nonvolatile memory and semiconductor device |
| 03/04/2008 | US7339819 Spin based memory coupled to CMOS amplifier |
| 03/04/2008 | US7339818 Spintronic devices with integrated transistors |
| 03/04/2008 | US7339817 Thermally-assisted switching of magnetic memory elements |
| 03/04/2008 | US7339815 Method of operating a programmable resistance memory array |
| 03/04/2008 | US7339814 Phase change memory array having equalized resistance |
| 03/04/2008 | US7339813 Complementary output resistive memory cell |
| 03/04/2008 | US7339812 Stacked 1T-nmemory cell structure |
| 03/04/2008 | US7339811 Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation |
| 03/04/2008 | US7339401 Nanotube-based switching elements with multiple controls |
| 03/04/2008 | US7339185 Phase change memory device and method for forming the same |
| 03/04/2008 | US7337532 Method of manufacturing micro-electromechanical device having motion-transmitting structure |
| 02/28/2008 | WO2008024171A1 Dram transistor with recessed gates and methods of fabricating the same |
| 02/28/2008 | WO2008023793A1 Semiconductor integrated circuit, memory system and electronic imaging device |
| 02/28/2008 | WO2008022463A1 Integrated circuit with digitally switched components to drive an output to which is connected a load |
| 02/28/2008 | WO2008002832A3 Method for programming non-volatile memory using variable amplitude programming pulses |
| 02/28/2008 | US20080049531 Memory arrangement and method for operating such a memory arrangement |
| 02/28/2008 | US20080049530 Equalizer circuit and method of controlling the same |
| 02/28/2008 | US20080049520 Flash memory system and programming method performed therein |
| 02/28/2008 | US20080049516 Flash memory device having improved program rate |
| 02/28/2008 | US20080049515 Semiconductor memory device |
| 02/28/2008 | US20080049514 Memory device with a managing microprocessor system and an architecture of fail search and automatic redundancy |
| 02/28/2008 | US20080049512 Nonvolatile memory device and method of programming the same |
| 02/28/2008 | US20080049511 Method of programming cells of a nand memory device |
| 02/28/2008 | US20080049507 Flash memory device employing disturbance monitoring scheme |
| 02/28/2008 | US20080049505 Scalable memory system |
| 02/28/2008 | US20080049503 Nonvolatile storage and erase control |
| 02/28/2008 | US20080049501 Cell array of memory device sharing selection line |
| 02/28/2008 | US20080049500 Nonvolatile memory |
| 02/28/2008 | US20080049499 Block status storage unit of flash memory device |
| 02/28/2008 | US20080049498 Integrated Circuit with Analog or Multilevel Storage Cells and User-Selectable Sampling Frequency |
| 02/28/2008 | US20080049496 Method for modifying data more than once in a multi-level cell memory location within a memory array |
| 02/28/2008 | US20080049495 Method, apparatus and system relating to automatic cell threshold voltage measurement |
| 02/28/2008 | US20080049492 Spin Memory with Write Pulse |
| 02/28/2008 | US20080049491 Electromechanical non-volatile memory device and method of manufacturing the same |
| 02/28/2008 | US20080049490 Phase-change memory device, phase-change channel transistor, and memory cell array |
| 02/28/2008 | US20080049489 Multi-Bit Spin Memory |
| 02/28/2008 | US20080049488 Spin-transfer based MRAM with reduced critical current density |
| 02/28/2008 | US20080049487 Semiconductor memory device |
| 02/28/2008 | US20080049481 Semiconductor device |
| 02/28/2008 | US20080049072 Printhead including a looped heater element |
| 02/28/2008 | US20080048767 Semiconductor device with surge protection circuit |
| 02/28/2008 | DE102007038114A1 Error correction circuit for correction of error in memory cell e.g. read only memory, has main control unit is formed for determining definite error location based on error type and output is determined by two error locating detectors |
| 02/28/2008 | DE102006008264B4 MRAM Zelle mit Domänenwandumschaltung und Feldauswahl MRAM cell with domain wall switching and field selection |
| 02/28/2008 | DE10115817B4 Integrierter Speicherchip mit einem dynamischen Speicher Built-in memory chip with a dynamic memory |
| 02/28/2008 | DE10115816B4 Integrierter dynamischer Speicher und Verfahren zum Betrieb eines integrierten dynamischen Speichers Integrated dynamic memory and method of operating a dynamic memory integrated |
| 02/28/2008 | DE10060665B4 Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu dessen Herstellung A non-volatile ferroelectric memory and method for its production |
| 02/27/2008 | EP1892721A2 Method of programming a multi-bit non-volatile memory device and multi-bit non-volatile memory device |
| 02/27/2008 | EP1892720A1 A non-volatile, electrically-programmable memory with a plurality of storage densities and data transfer speeds |
| 02/27/2008 | EP1892719A1 Logic cell protected against hazards |
| 02/27/2008 | EP1892718A1 Charge sensing circuit |
| 02/27/2008 | EP1892709A2 Devices and methods for writing and reading information |
| 02/27/2008 | EP1891644A1 Selective slow programming convergence in a flash memory device |
| 02/27/2008 | EP1891583A1 A data storage device |
| 02/27/2008 | EP1588379B1 Non-volatile semiconductor memory with large erase blocks storing cycle counts |
| 02/27/2008 | CN101133460A A method in the fabrication of a memory device |
| 02/27/2008 | CN101133459A Variable memory array self-refresh rates in suspend and standby modes |
| 02/27/2008 | CN101133301A Mram device integrated with other types of circuitry |
| 02/27/2008 | CN101132051A Semiconductor memory device and fabrication method thereof |
| 02/27/2008 | CN101132050A Thin film fuse phase change cell with thermal isolation layer and manufacturing method |
| 02/27/2008 | CN101132049A SiSb based phase-change thin-film material used for phase-change memory device |
| 02/27/2008 | CN101132048A Phase-change memory cell structure and fabrication method thereof |
| 02/27/2008 | CN101131868A Latency counter |
| 02/27/2008 | CN101131867A 校准电路 Calibration circuit |
| 02/27/2008 | CN101131866A Magnetic memory element, magnetic memory, and method for driving magnetic memory |