| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 04/10/2008 | US20080084765 Method and apparatus for sector erase operation in a flash memory array |
| 04/10/2008 | US20080084764 NROM Memory Device With Enhanced Endurance |
| 04/10/2008 | US20080084762 Method of identifying logical information in a programming and erasing cell by on-side reading scheme |
| 04/10/2008 | US20080084761 Hybrid programming methods and systems for non-volatile memory storage elements |
| 04/10/2008 | US20080084760 Efficient circuit and method to measure resistance thresholds |
| 04/10/2008 | US20080084758 Sense amplifier for non-volatile memory |
| 04/10/2008 | US20080084757 Memory cell |
| 04/10/2008 | US20080084756 Loading data with error detection in a power on sequence of flash memory device |
| 04/10/2008 | US20080084755 Systems for reverse reading in non-volatile memory with compensation for coupling |
| 04/10/2008 | US20080084754 Reverse reading in non-volatile memory with compensation for coupling |
| 04/10/2008 | US20080084753 Decoding method in an NROM flash memory array |
| 04/10/2008 | US20080084752 Systems utilizing variable program voltage increment values in non-volatile memory program operations |
| 04/10/2008 | US20080084751 Variable program voltage increment values in non-volatile memory program operations |
| 04/10/2008 | US20080084748 Apparatus with reduced program disturb in non-volatile storage |
| 04/10/2008 | US20080084747 Reducing program disturb in non-volatile storage |
| 04/10/2008 | US20080084746 Non-volatile memory device adapted to reduce coupling effect between storage elements and related methods |
| 04/10/2008 | US20080084745 Dual-gate device and method |
| 04/10/2008 | US20080084744 Method of making and operating a semiconductor memory array of floating gate memory cells with program/erase and select gates |
| 04/10/2008 | US20080084743 Memory stucture capable of bit-wise write or overwrite |
| 04/10/2008 | US20080084741 Semiconductor Memory Device for Storing Multivalued Data |
| 04/10/2008 | US20080084737 Method of achieving zero column leakage after erase in flash EPROM |
| 04/10/2008 | US20080084736 Multi-port phase change random access memory cell and multi-port phase change random access memory device including the same |
| 04/10/2008 | US20080084735 Method for reading phase change memories and phase change memory |
| 04/10/2008 | US20080084734 Balanced and bi-directional bit line paths for memory arrays with programmable memory cells |
| 04/10/2008 | US20080084733 Back-gate controlled asymmetrical memory cell and memory using the cell |
| 04/10/2008 | US20080084732 Nbti-resilient memory cells with nand gates |
| 04/10/2008 | US20080084731 DRAM devices including fin transistors and methods of operating the DRAM devices |
| 04/10/2008 | US20080084730 Semiconductor memory device |
| 04/10/2008 | US20080084727 Scaleable memory systems using third dimension memory |
| 04/10/2008 | US20080084726 Semiconductor integrated circuit device and method for designing the same |
| 04/10/2008 | US20080084724 System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells |
| 04/10/2008 | US20080083943 Dual-gate memory device and optimization of electrical interaction between front and back gates to enable scaling |
| 04/10/2008 | US20080083942 Single-Poly Non-Volatile Memory Cell |
| 04/10/2008 | DE102007045077A1 Aktive Schreib-Strom-Anpassung für einen magnetoresistiven Vielfachzugriffsspeicher Active write current adjustment for a magneto-access memory |
| 04/10/2008 | DE102007041265A1 Wortleitungssteuerung zur Verbesserung der Lese- und Schreibrate Word line control to improve the literacy rate |
| 04/10/2008 | DE102007040577A1 DLL-Schaltung und damit ausgestattete Halbleitervorrichtung DLL circuit and semiconductor device equipped therewith |
| 04/10/2008 | DE102007034304A1 Unterstützte Taktschaltung für Halbleiterspeicher Supported timing circuit for semiconductor memories |
| 04/09/2008 | EP1908076A1 Non-volatile content addressable memory using phase-change-material memory elements |
| 04/09/2008 | EP1570487B1 Architecture for high-speed magnetic memories |
| 04/09/2008 | EP1354322B1 Non orthogonal mram device |
| 04/09/2008 | CN101159314A Memory cell of resistor type stochastic memory and preparation method thereof |
| 04/09/2008 | CN101159313A Sulfureous phase changing memory CRAM storage member |
| 04/09/2008 | CN101159312A Memory cell device with circumferentially-extending memory element |
| 04/09/2008 | CN101159309A Method for implementing low power consumption resistance memory |
| 04/09/2008 | CN101159164A Semiconductor device including multi-bit memory cells and a temperature budget sensor |
| 04/09/2008 | CN101159163A System latency levelization for read data |
| 04/09/2008 | CN101159162A Balanced and bi-directional bit line paths for memory arrays with programmable memory cells |
| 04/09/2008 | CN100380700C Composite electrode having low heat consumption and small contact area for memory device of phase-changing medium |
| 04/09/2008 | CN100380665C Ferroelectric memory element and its manufacturing method |
| 04/09/2008 | CN100380664C Integrated circuit device and mfg. and method for storing document and programme |
| 04/09/2008 | CN100380654C Interconnection structure and methods |
| 04/09/2008 | CN100380528C Semiconductor device beyond misrecognition of occuring cut-off of fuse |
| 04/09/2008 | CN100380527C Once write film storage |
| 04/09/2008 | CN100380523C Non-volatile semiconductor memory device and rewriting method |
| 04/09/2008 | CN100380522C Magnetoresistive level generator |
| 04/09/2008 | CN100380521C Magnetic memory device, write current drive circuit, and write current drive method |
| 04/09/2008 | CN100380520C Memory device capable of stable data writing |
| 04/09/2008 | CN100380519C Magnetic random access memory with shared character lines |
| 04/09/2008 | CN100380518C Method for generating solid memory address configuration |
| 04/09/2008 | CN100380448C Magneto-resistance effect element, magnetic head and magnetic storage device |
| 04/09/2008 | CN100380184C Display device |
| 04/08/2008 | US7356795 Semiconductor integrated circuit device and method for designing the same |
| 04/08/2008 | US7356755 Error correction for multi-level cell memory with overwrite capability |
| 04/08/2008 | US7356723 Method and apparatus for data transfer |
| 04/08/2008 | US7356718 Semiconductor memory circuit and method for operating the same in a standby mode |
| 04/08/2008 | US7356662 Compressed file system for non-volatile RAM |
| 04/08/2008 | US7356654 Flexible multi-area memory and electronic device using the same |
| 04/08/2008 | US7356646 Memory card using NAND flash memory and its operating method |
| 04/08/2008 | US7355919 Semiconductor storage device and refresh control method therefor |
| 04/08/2008 | US7355912 Auto-precharge control circuit in semiconductor memory and method thereof |
| 04/08/2008 | US7355911 Semiconductor memory component and method for testing semiconductor memory components having a restricted memory area (partial good memories) |
| 04/08/2008 | US7355902 Methods and apparatus for inline characterization of high speed operating margins of a storage element |
| 04/08/2008 | US7355901 Synchronous output buffer, synchronous memory device and method of testing access time |
| 04/08/2008 | US7355898 Integrated circuit and method for reading from resistance memory cells |
| 04/08/2008 | US7355896 System for improving endurance and data retention in memory devices |
| 04/08/2008 | US7355894 Programming flash memories |
| 04/08/2008 | US7355892 Partial page fail bit detection in flash memory devices |
| 04/08/2008 | US7355889 Method for programming non-volatile memory with reduced program disturb using modified pass voltages |
| 04/08/2008 | US7355888 Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages |
| 04/08/2008 | US7355887 Non-volatile semiconductor memory device having non-selected word lines adjacent to selected word lines being charged at different timing for program disturb control |
| 04/08/2008 | US7355886 Method of programming, erasing and reading memory cells in a resistive memory array |
| 04/08/2008 | US7355885 Semiconductor memory device with magnetoresistance elements and method of writing date into the same |
| 04/08/2008 | US7355884 Magnetoresistive element |
| 04/08/2008 | US7355883 Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory |
| 04/08/2008 | US7355882 Method and device for performing active field compensation during programming of a magnetoresistive memory device |
| 04/08/2008 | US7355881 Memory array with global bitline domino read/write scheme |
| 04/08/2008 | US7355880 Soft error resistant memory cell and method of manufacture |
| 04/08/2008 | US7355879 Semiconductor integrated circuit, operating method thereof, and IC card including the circuit |
| 04/08/2008 | US7355877 Semiconductor device |
| 04/08/2008 | US7355824 Magnetoresistive effect element and magnetic memory having the same |
| 04/08/2008 | US7355246 Memory cell without halo implant |
| 04/08/2008 | US7355237 Shield plate for limiting cross coupling between floating gates |
| 04/08/2008 | US7355203 Use of gate electrode workfunction to improve DRAM refresh |
| 04/03/2008 | WO2008039661A1 Hybrid programming methods and systems for non-volatile memory storage elements |
| 04/03/2008 | WO2008039166A2 Non-volatile switching and memory devices using vertical nanotubes |
| 04/03/2008 | WO2008037816A1 Nbti-resistant memory cells with nand gates |
| 04/03/2008 | WO2008021582A3 Mram refreshing |
| 04/03/2008 | WO2007131127A3 Merging queued memory operation in a non-volatile memory |
| 04/03/2008 | US20080082291 On die thermal sensor |
| 04/03/2008 | US20080080290 Memory device having small clock buffer |