Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2008
03/13/2008US20080061336 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
03/13/2008US20080061298 Semiconductor element and semiconductor memory device using the same
03/13/2008DE19944727B4 Integrierte Schaltung und synchrones Halbleiterspeicherbauelement mit einer Takterzeugungsschaltung Integrated circuit and synchronous semiconductor memory device having a clock generating circuit
03/13/2008DE102007035895A1 Dynamische Leistungssteuerung eines Wärmesensors einer Speichervorrichtung Dynamic power control of a heat sensor of a memory device
03/13/2008DE102006040570A1 Storage device has number of multi level storage cells, where each cell has number in levels, corresponding to 2n, where n is positive whole number, and another device combines levels of storage cells
03/13/2008DE102006040238A1 Transistor arrangement for selecting one memory cell from multiple memory cells in substrate, has memory cell, and one wordline forms in one wordline trench of multiple gate electrodes at side panel of active areas of two adjacent set
03/12/2008EP1898423A1 Refresh sequence control for multiple memory elements
03/12/2008EP1898422A1 Semiconductor memory and system
03/12/2008CN101142629A Magnetic ROM information carrier with additional stabilizing layer
03/12/2008CN101140944A Spin memory and spin fet
03/12/2008CN101140803A Flash memory device having branch path
03/12/2008CN101140802A Phase change random access memory and related methods of operation
03/12/2008CN101140801A Phase change random access memory device and related methods of operation
03/12/2008CN101140800A Memory cell programmed using current from access device
03/12/2008CN101140799A Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
03/12/2008CN101140798A Static random access memory device
03/12/2008CN101140797A Synchronous dynamic memory read-write method and read-write equipment
03/12/2008CN100375388C Integrated circuit low leakage power circuitry for use with advanced CMOS process
03/12/2008CN100375309C Tmr material having ultra-thin magnetic layer
03/12/2008CN100375285C Integrated storage circuit
03/12/2008CN100375198C Semiconductor device equiped with memory and logical chips for testing memory ships
03/12/2008CN100375194C Semiconductor integrated circuit device
03/12/2008CN100375193C Semiconductor memory
03/12/2008CN100375002C Storage device and information processing system
03/11/2008US7343462 Method for using non-volatile memory and electronics device thereof
03/11/2008US7342845 Method and apparatus to clamp SRAM supply voltage
03/11/2008US7342842 Data storage device and refreshing method for use with such device
03/11/2008US7342835 Memory device with pre-fetch circuit and pre-fetch method
03/11/2008US7342830 Program and program verify operations for flash memory
03/11/2008US7342829 Memory device and method for operating a memory device
03/11/2008US7342828 Nonvolatile semiconductor memory device
03/11/2008US7342827 Charge trap-type 3-level non-volatile semiconductor memory device and method of driving the same
03/11/2008US7342826 Semiconductor device
03/11/2008US7342825 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
03/11/2008US7342824 Method of programming a 3D RRAM
03/11/2008US7342823 Tunneling magnetoresistance device with high magnetoimpedance (MI) effect
03/11/2008US7342822 Magnetic memory device, write current driver circuit and write current driving method
03/11/2008US7342821 Hot-carrier-based nonvolatile memory utilizing differing transistor structures
03/11/2008US7342819 Methods for generating a reference voltage and for reading a memory cell and circuit configurations implementing the methods
03/11/2008US7342818 Hybrid circuit having nanotube electromechanical memory
03/11/2008US7342279 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
03/11/2008US7341918 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
03/11/2008US7341672 Method of fabricating printhead for ejecting ink supplied under pulsed pressure
03/06/2008WO2008028129A2 Non-volatile memory cell in standard cmos process
03/06/2008WO2008027681A2 Non-volatile memory device and method having bit-state assignments selected to minimize signal coupling
03/06/2008WO2007134253A3 Use of alternative value in cell detection
03/06/2008WO2007134247A3 Dynamic cell bit resolution
03/06/2008WO2007131062A3 Non-volatile memory with background data latch caching during read operations and methods therefor
03/06/2008US20080059695 Method for controlling non-volatile semiconductor memory system
03/06/2008US20080056049 Method for powering an electronic device and circuit
03/06/2008US20080056044 Semiconductor device and fabrication method thereof
03/06/2008US20080056035 Method and apparatus for adaptive programming of flash memory, flash memory devices, and systems including flash memory having adaptive programming capability
03/06/2008US20080056031 Semiconductor memory
03/06/2008US20080056012 Method for prioritized erasure of flash memory
03/06/2008US20080056011 Semiconductor device
03/06/2008US20080056010 Non-volatile memory with programming through band-to-band tunneling and impact ionization gate current
03/06/2008US20080056009 Method of programming non-volatile memory
03/06/2008US20080056007 Flash memory device using program data cache and programming method thereof
03/06/2008US20080056006 Flash memory device and method for programming multi-level cells in the same
03/06/2008US20080056005 Non-volatile memory cell read failure reduction
03/06/2008US20080056003 Concurrent programming of non-volatile memory
03/06/2008US20080056002 Concurrent programming of non-volatile memory
03/06/2008US20080055998 Flash memory device and method for programming multi-level cells in the same
03/06/2008US20080055995 Programming non-volatile memory with improved boosting
03/06/2008US20080055994 Concurrent programming of non-volatile memory
03/06/2008US20080055993 System and memory for sequential multi-plane page memory operations
03/06/2008US20080055992 Semiconductor device with the high-breakdown-voltage transistors
03/06/2008US20080055990 Non-volatile semiconductor storage device and non-volatile storage system
03/06/2008US20080055988 Method, apparatus, and system providing adjustable memory page configuration
03/06/2008US20080055987 Memory Device and Method of Operating a Memory Device
03/06/2008US20080055986 Semiconductor memory device having faulty cells
03/06/2008US20080055984 Non-volatile memory device and method having bit-state assignments selected to minimize signal coupling
03/06/2008US20080055978 Nonvolatile semiconductor memory with dummy cell which is absence of a source/drain region
03/06/2008US20080055977 Methods, devices and systems for sensing the state of fuse devices
03/06/2008US20080055976 MEM suspended gate non-volatile memory
03/06/2008US20080055974 Semiconductor device
03/06/2008US20080055972 Phase change random access memory
03/06/2008US20080055971 Phase change random access memory device and related methods of operation
03/06/2008US20080055970 Medium for use in data storage, thermal energy storage and other applications, with functional layer made of different materials
03/06/2008US20080055969 Phase change memory
03/06/2008US20080055968 Memory with five-transistor bit cells and associated control circuit
03/06/2008US20080055967 Memory with low power mode for WRITE
03/06/2008US20080055966 Storage circuit with efficient sleep mode and method
03/06/2008US20080055965 Non-Volatile Memory Cell In Standard CMOS Process
03/06/2008US20080055963 Phase change random access memory and related methods of operation
03/06/2008US20080055962 Ferroelectric semiconductor memory device
03/06/2008US20080055961 Ferroelectric memory device and electronic apparatus
03/06/2008US20080055960 Semiconductor storage device, and data reading method
03/06/2008US20080055958 Semiconductor memory device
03/06/2008US20080054936 Output circuit of semiconductor device and semiconductor device including thereof
03/06/2008US20080054310 Capacitorless DRAM memory cell comprising a partially-depleted MOSFET device comprising a gate insulator in two parts
03/06/2008DE112004001640T5 Nichtflüchtige sequenzielle Maschine Non-volatile sequential machine
03/06/2008DE102004043902B9 Feldeffekttransistor mit einem Anschlussdielektrikum und DRAM-Speicherzelle Field effect transistor having a DRAM memory cell and Anschlussdielektrikum
03/05/2008EP1895542A2 Flash memory device having multi-page copyback functionality and related block replacement methods
03/05/2008EP1895539A2 Semiconductor device and fabrication method thereof
03/05/2008EP1894205A1 Compensation currents in non-volatile memory read operations
03/05/2008EP1894204A1 Ideal cmos sram system implementation
03/05/2008EP1894203A1 A method in the fabrication of a ferroelectric memory device
03/05/2008EP1894202A2 Word line driver for dram embedded in a logic process
03/05/2008EP1894146A1 A data storage device
1 ... 244 245 246 247 248 249 250 251 252 253 254 255 256 257 258 259 260 261 262 263 264 ... 761