Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2008
05/15/2008US20080111177 Non-volatile memory cell and non-volatile memory device using said cell
05/15/2008US20080111154 INTEGRATION OF A SiGe- OR SiGeC-BASED HBT WITH A SiGe- OR SiGeC-STRAPPED SEMICONDUCTOR DEVICE
05/14/2008EP1751762A4 Automatic hidden refresh in a dram and method therefor
05/14/2008EP1454324B1 Segmented write line architecture
05/14/2008EP1131700B1 A microcontroller with extended internal data memory
05/14/2008CN101180682A Non-volatile memory and method with power-saving read and program-verify operations
05/14/2008CN101178932A Method for reading double places memory cell
05/14/2008CN101178931A Low-power consumption SRAM circuit structure design capable of realizing high speed write and windows write
05/14/2008CN101178930A Semiconductor memory device comprising a plurality of static memory cells
05/14/2008CN101178929A Data storage device using magnetic domain wall movement and method of operating the same
05/14/2008CN101178928A 半导体器件和存储器 A semiconductor device and a memory
05/14/2008CN101178927A Multi-stable sensing amplifier applied to memory
05/14/2008CN100388499C Memory cell design with vertically stacked crossovers
05/14/2008CN100388388C Semiconductor memory apparatus and data write method
05/14/2008CN100388387C Semiconductor storage device
05/14/2008CN100388386C Compensation method of a bias magnetic field in a storage surface of a magnetoresistive storage cell, and semiconductor device
05/13/2008US7373562 Memory circuit comprising redundant memory areas
05/13/2008US7373432 Programmable circuit and related computing machine and method
05/13/2008US7373265 Data storage device and a method of reading data in a data storage device
05/13/2008US7373083 Camera incorporating a releasable print roll unit
05/13/2008US7372762 Semiconductor memory device
05/13/2008US7372757 Magnetic memory device with moving magnetic domain walls
05/13/2008US7372752 Test mode controller
05/13/2008US7372742 Memory block erasing in a flash memory device
05/13/2008US7372741 Nonvolatile memory apparatus having a processor and plural memories one or more of which is a nonvolatile memory having circuitry which performs an erase operation and an erase verify operation when the processor specifies the erase operation mode to the nonvolatile memory
05/13/2008US7372740 Semiconductor memory device
05/13/2008US7372739 High voltage generation and regulation circuit in a memory device
05/13/2008US7372738 Flash memory device with reduced erase time
05/13/2008US7372737 Nonvolatile memory and method of driving the same
05/13/2008US7372735 Non-volatile semiconductor memory device
05/13/2008US7372734 Methods of operating electrically alterable non-volatile memory cell
05/13/2008US7372731 Flash memories with adaptive reference voltages
05/13/2008US7372730 Method of reading NAND memory to compensate for coupling between storage elements
05/13/2008US7372728 Magnetic random access memory array having bit/word lines for shared write select and read operations
05/13/2008US7372727 Magnetic cell and magnetic memory
05/13/2008US7372725 Integrated circuit having resistive memory
05/13/2008US7372723 State save-on-power-down using GMR non-volatile elements
05/13/2008US7372722 Methods of operating magnetic random access memory devices including heat-generating structures
05/13/2008US7372720 Methods and apparatus for decreasing soft errors and cell leakage in integrated circuit structures
05/13/2008US7372719 DRAM semiconductor memory device with increased reading accuracy
05/13/2008US7372718 Storage and semiconductor device
05/13/2008US7372717 Methods for resistive memory element sensing using averaging
05/13/2008US7372306 Method and apparatus for stability control using fast excitation in circuits having elements with negative differential resistance
05/13/2008US7372292 Signal transmitting device suited to fast signal transmission
05/13/2008US7372166 Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
05/13/2008US7372118 Magnetic random access memory and method of manufacturing the same
05/13/2008US7372116 Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh
05/13/2008US7371642 Multi-state NROM device
05/08/2008WO2008053677A1 Write-in verifying mram
05/08/2008WO2008053473A2 Memory cell readout using successive approximation
05/08/2008WO2008053472A2 Reading memory cells using multiple thresholds
05/08/2008WO2008053053A1 Reduction of effect of ageing on registers
05/08/2008WO2008036963A3 Feram manufacture using gas cluster ion beam
05/08/2008WO2007079159A3 Distributed programmed memory cell overwrite protection
05/08/2008US20080106966 Circuit of detecting power-up and power-down
05/08/2008US20080106952 Multimode data buffer and method for controlling propagation delay time
05/08/2008US20080106948 Nonvolatile semiconductor memory device, manufacturing method thereof and method of programming information into the memory device
05/08/2008US20080106945 Self-reference sense amplifier circuit and sensing method
05/08/2008US20080106944 Method for setting programming start bias for flash memory device and programming method using the same
05/08/2008US20080106942 Nand type non-volatile memory device and method for fabricating the same
05/08/2008US20080106938 Semiconductor integrated circuit device and data processor device
05/08/2008US20080106934 Memory device and method of operating and fabricating the same
05/08/2008US20080106933 Advanced multi-bit magnetic random access memory device
05/08/2008US20080106932 Coil sensor memory device and method
05/08/2008US20080106931 Phase change memory device
05/08/2008US20080106930 Pram and method of firing memory cells
05/08/2008US20080106929 Electrochemical memory with heater
05/08/2008US20080106928 Energy adjusted write pulses in phase-change memory cells
05/08/2008US20080106927 Stabilized resistive switching memory
05/08/2008US20080106926 Non-volatile resistance switching memories and methods of making same
05/08/2008US20080106925 Correlated electron memory
05/08/2008US20080106924 Resistive memory device and method of writing data
05/08/2008US20080106923 Phase Change Memory Cells with Dual Access Devices
05/08/2008US20080106922 Semiconductor memory device and layout structure of word line contacts
05/08/2008US20080106576 Printhead Micro-Electromechanical Nozzle Arrangement With A Motion-Transmitting Structure.
05/08/2008DE19807014B4 Halbleiterspeicherelement mit verbesserter Datenausgabegeschwindigkeit The semiconductor memory device with improved data output rate
05/08/2008DE102007047377A1 Speicherzugriff-Strobe-Konfigurationssystem und -verfahren Memory access strobe configuration system and method
05/08/2008DE102007013595A1 Kohlenstoff-Filament-Speicher und Verfahren zum Herstellen eines Kohlenstoff-Filament-Speichers A carbon filament memory and method of manufacturing a carbon filament memory
05/08/2008DE102006054554A1 Speichereinrichtung-Architektur und Verfahren zum Vorladen einer Bitleitung mit hoher Geschwindigkeit Memory device architecture and method for precharging a bit line at high speed
05/08/2008DE102006052338A1 Memory unit i.e. dynamic RAM, operating method, involves producing read connection between memory area and output buffer at time interval after providing read instruction for transferring read information from memory area to output buffer
05/08/2008DE102006051514A1 Speichermodul und Verfahren zum Betreiben eines Speichermoduls Memory module and method of operating a memory module
05/08/2008DE102006050362A1 Synchronisationsvorrichtung und Verfahren zur Datensynchronisation Synchronization apparatus and method for data synchronization
05/08/2008DE102005053496B4 Speicherbauelement mit mehreren resistiv schaltenden Speicherzellen, insbesondere PCM-Speicherzellen Memory device having a plurality of resistive switching memory cells, in particular PCM memory cells
05/08/2008DE102005004126B4 MRAM-Speicherzelle mit schwacher intrinsisch anisotroper Speicherschicht MRAM memory cell with weak intrinsic anisotropic storage layer
05/07/2008EP1918937A1 Storage element and memory
05/07/2008EP1918936A1 Data storage device using magnetic domain wall movement and method of operating the same
05/07/2008EP1917684A2 Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
05/07/2008CN101176162A Faster programming of higher level states in multi-level cell flash memory
05/07/2008CN101176161A Non-volatile content addressable memory using phase-change-material memory elements
05/07/2008CN101174673A Double-layer compound film non-volatile memory device and method for producing the same
05/07/2008CN101174672A Storage cell and its manufacturing process
05/07/2008CN101174670A Storage element and memory
05/07/2008CN101174669A Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory
05/07/2008CN101174455A Sram device with a low operation voltage
05/07/2008CN101174452A Memory module and method for operating a memory module
05/07/2008CN100386820C Non-volatile variohm, memory element, and its scaling method
05/07/2008CN100386818C Low power hynamic RAM with bit line pre-charge, inversion data write and storing data output
05/06/2008US7370237 Semiconductor memory device capable of accessing all memory cells
05/06/2008US7370141 Memory system
05/06/2008US7370140 Enhanced DRAM with embedded registers