Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2008
03/27/2008WO2007134244A3 Use of 8-bit or higher a/d for nand cell value
03/27/2008US20080076193 Ferroelectric memory device with a conductive polymer layer and a method of formation
03/27/2008US20080075214 Information processing apparatus working at variable operating frequency
03/27/2008US20080074930 Semiconductor memory device
03/27/2008US20080074929 Application specific semiconductor integrated circuit and its manufacturing method thereof
03/27/2008US20080074928 Nonvolatile memory system and associated programming methods
03/27/2008US20080074926 Nonvolatile semiconductor memory and fabrication method for the same
03/27/2008US20080074925 Nonvolatile memory device including circuit formed of thin film transistors
03/27/2008US20080074924 Non-volatile electrically alterable memory cells for storing multiple data
03/27/2008US20080074923 Flash memory device and method of programming the same
03/27/2008US20080074921 Semiconductor integrated circuit device and method of operating same
03/27/2008US20080074919 Phase-change memory device and firing method for the same
03/27/2008US20080074918 Phase change memory device and related programming method
03/27/2008US20080074917 Magnetoresistive RAM and associated methods
03/27/2008US20080074916 SRAM device with a low operation voltage
03/27/2008US20080074913 Semiconductor integrated circuit device and method for designing the same
03/27/2008US20080074466 Print assembly and printer having wide printing zone
03/27/2008US20080073726 Semiconductor integrated circuit device and process for manufacturing the same
03/27/2008US20080073719 Semiconductor device
03/27/2008US20080073711 Method of manufacturing a semiconductor integrated circuit device having a columnar laminate
03/27/2008DE19915044B4 Schnittstelle für synchrone Halbleiterspeicher Interface for synchronous semiconductor memory
03/27/2008DE102007036088A1 Memory for use in integrated circuits for various electrical and electronic applications, has refurbishing circuit that examines validity bits and refurbishes memory cells
03/27/2008DE102006044854A1 Verzögerungsschaltung Delay circuit
03/27/2008DE102006043668A1 Controller for controlling semiconductor memory chip of semiconductor memory module, has control device for generating control signals, for controlling reading-and writing access to semiconductor memory chip
03/27/2008DE102006043634A1 Halbleiterspeichermodul mit Busarchitektur A semiconductor memory module with bus architecture
03/27/2008DE102006043456A1 Verfahren zum Auffrischen des Inhalts einer Speicherzelle einer Speicheranordnung sowie entsprechende Speicheranordnung Method to refresh the contents of a memory cell of a memory array and corresponding memory array
03/27/2008DE102006043222A1 Magnetisch programmierbares EEPROM Magnetically programmable EEPROM
03/27/2008DE102006042858A1 Schaltungsanordnung zum Abtasten angeforderter Datenbits Circuitry for sensing requested data bits
03/27/2008DE102006042727A1 Memory unit e.g. magnetic RAM memory unit, for storing data, has potential supply unit supplying potential to amplifying circuits, such that leakage current through circuits is decreased or avoided in deactivated condition of circuits
03/27/2008DE102004015269B4 Integrierte Schaltung zur Ermittelung einer Spannung An integrated circuit for determining a voltage
03/26/2008EP1903578A1 Semiconductor memory device and method of controlling timing
03/26/2008CN101151677A Decoding circuit for non-binary groups of memory line drivers
03/26/2008CN101150393A A RSA coprocessor design method applicable SOC chip
03/26/2008CN101150173A Nonvolatile memory device and fabrication method thereof
03/26/2008CN101150170A Tunnel type magnetic sensor having fixed magnetic layer of composite structure containing CoFeB film and method for manufacturing the same
03/26/2008CN101150169A Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor
03/26/2008CN101150138A Phase change memory devices including memory cells having different phase change materials and related methods and systems
03/26/2008CN101149970A Semiconductor memory device
03/26/2008CN101149969A Semiconductor memory and memory system
03/26/2008CN101149968A Delay counter possessing frequency detector and its delayed counting method
03/26/2008CN101149967A Memorizer control circuit and method
03/26/2008CN101149966A Semiconductor memory device
03/26/2008CN101149965A Wordline booster design structure and method of operating a wordline booster circuit
03/26/2008CN100377355C Ferroelectric capacitor and its manufacturing method
03/26/2008CN100377260C Dynamic memory and method for testing dynamic memory
03/26/2008CN100377257C Semiconductor memory device
03/26/2008CN100377256C Multi-port memory unit structure
03/25/2008US7350018 Method and system for using dynamic random access memory as cache memory
03/25/2008US7349289 Two-bit per I/O line write data bus for DDR1 and DDR2 operating modes in a DRAM
03/25/2008US7349284 Memory array with staged output
03/25/2008US7349280 Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
03/25/2008US7349279 Memory Device Having a Configurable Oscillator for Refresh Operation
03/25/2008US7349274 Precharge circuit and method employing inactive weak precharging and equalizing scheme and memory device including the same
03/25/2008US7349273 Access circuit and method for allowing external test voltage to be applied to isolated wells
03/25/2008US7349272 Multi-port semiconductor memory device
03/25/2008US7349271 Cascaded test circuit with inter-bitline drive devices for evaluating memory cell performance
03/25/2008US7349269 Programmable DQS preamble
03/25/2008US7349264 Alternate sensing techniques for non-volatile memories
03/25/2008US7349263 Circuit and method for adaptive incremental step-pulse programming in a flash memory device
03/25/2008US7349262 Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
03/25/2008US7349260 Alternate row-based reading and writing for non-volatile memory
03/25/2008US7349259 Semiconductor memory device
03/25/2008US7349258 Reducing read disturb for non-volatile storage
03/25/2008US7349257 Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
03/25/2008US7349256 Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
03/25/2008US7349255 High data rate write process for non-volatile flash memories
03/25/2008US7349254 Charge-trapping memory device and methods for its manufacturing and operation
03/25/2008US7349253 Memory device and method for testing memory devices with repairable redundancy
03/25/2008US7349252 Integrated DRAM-NVRAM multi-level memory
03/25/2008US7349251 Integrated memory circuit arrangement
03/25/2008US7349250 Semiconductor device
03/25/2008US7349249 Semiconductor memory device
03/25/2008US7349248 Non-volatile memory
03/25/2008US7349247 Multi-layer magnetic switching element comprising a magnetic semiconductor layer having magnetization induced by applied voltage
03/25/2008US7349246 Initial firing method and phase change memory device for performing firing effectively
03/25/2008US7349245 Non-volatile phase-change memory device and associated program-suspend-read operation
03/25/2008US7349244 Magnetic memory device
03/25/2008US7349243 3-parameter switching technique for use in MRAM memory arrays
03/25/2008US7349242 Magnetic device
03/25/2008US7349241 SRAM circuitry
03/25/2008US7349240 Semiconductor memory device having reduced leakage current
03/25/2008US7349238 Ferroelectric memory device
03/25/2008US7349237 Plateline driver with RAMP rate control
03/25/2008US7349236 Electromechanical memory cell with torsional movement
03/25/2008US7349235 Non-volatile memory device
03/25/2008US7348823 Delay circuit and delay synchronization loop device
03/25/2008US7348647 Digital memory cell device
03/25/2008US7348640 Memory device
03/25/2008US7347952 Method of fabricating an ink jet printhead
03/20/2008WO2008032549A1 Semiconductor storage device
03/20/2008US20080072095 Semiconductor integrated circuit
03/20/2008US20080072094 Asynchronous data holding circuit
03/20/2008US20080068895 Integrated Circuit Having a Drive Circuit
03/20/2008US20080068893 Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
03/20/2008US20080068891 Boosting to control programming of non-volatile memory
03/20/2008US20080068889 Nand memory cell at initializing state and initializing process for nand memory cell
03/20/2008US20080068887 Program methods for split-gate memory
03/20/2008US20080068882 Semiconductor device
03/20/2008US20080068881 Memory device employing magnetic domain wall movement
03/20/2008US20080068880 Memory device employing magnetic domain wall movement
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