Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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01/08/2009 | US20090010067 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
01/08/2009 | US20090010063 Nand type flash memory and write method of the same |
01/08/2009 | US20090010056 Method and apparatus for capacitorless double-gate storage |
01/08/2009 | US20090010055 One-transistor type DRAM |
01/08/2009 | US20090010054 Semiconductor memory device with ferroelectric device |
01/08/2009 | US20090010053 Combo memory cell |
01/08/2009 | US20090010052 One-transistor type dram |
01/08/2009 | US20090010051 Reading a phase change memory |
01/08/2009 | US20090010050 Calibration system for writing and reading multiple states into phase change memory |
01/08/2009 | US20090010049 Phase change memory device |
01/08/2009 | US20090010048 Memory device including a programmable resistance element |
01/08/2009 | US20090010047 Writing circuit for a phase change memory |
01/08/2009 | US20090010046 magnetic memory device with non-rectangular cross section current carrying conductors |
01/08/2009 | US20090010045 Magnetoresistive random access memory |
01/08/2009 | US20090010044 Toggle Magnetic Random Access Memory and Write Method of Toggle Magnetic Random Access Memory |
01/08/2009 | US20090010043 Configurable SRAM System and Method |
01/08/2009 | US20090010042 Semiconductor integrated circuit device |
01/08/2009 | US20090010041 Hybrid DRAM |
01/08/2009 | US20090010040 Resistance change memory device |
01/08/2009 | US20090010039 Non-volatile memory device |
01/08/2009 | US20090010038 Low resistance plate line bus architecture |
01/08/2009 | US20090010037 Semiconductor memory device with ferroelectric device |
01/08/2009 | US20090009236 Step-down circuit with stabilized output voltage |
01/08/2009 | DE102008028514A1 Speicherzellenanordnung und Steuerverfahren dafür Memory cell array and control method thereof |
01/08/2009 | DE102007031411A1 Integrierte Schaltung und Verfahren zum Umladen eines Schaltungsteils der integrierten Schaltung Integrated circuit and method for transferring a circuit part of the integrated circuit |
01/08/2009 | DE102005046739B4 Ein quasi-selbstpositionierender MRAM-Kontakt A quasi-self-positioning MRAM Contact |
01/08/2009 | DE102004031140B4 MRAM-Speichervorrichtung MRAM memory device |
01/07/2009 | EP2012323A2 Use of gamma hardened RFID tags in pharmaceutical devices |
01/07/2009 | EP2011146A1 Dynamic memory cell structures |
01/07/2009 | CN101341469A Method for recognizing a power outage in a data memory and recovering the data memory |
01/07/2009 | CN101339805A Phase change memory cell storage of high reading speed, low operating interference and operating method thereof |
01/07/2009 | CN101339804A Circuit and method for an sram with two phase word line pulse |
01/07/2009 | CN101339803A Temperature sensor circuit and calibration method thereof |
01/07/2009 | CN100449814C Magneto-resistance effect element, magnetic memory and magnetic head |
01/07/2009 | CN100449770C Intrgrated magnetoresistive semiconductor memory arrangement |
01/07/2009 | CN100449761C Semiconductor storage device |
01/07/2009 | CN100449647C Programming a phase-change material memory |
01/07/2009 | CN100449645C Dynamic semiconductor memory device |
01/07/2009 | CN100449644C Multiple data state memory cell |
01/07/2009 | CN100449643C Reference voltage generating circuit and internal voltage generating circuit for controlling internal voltage level |
01/07/2009 | CN100449642C Method and apparatus to program a phase change memory |
01/07/2009 | CN100449641C Non-volatile memory cell and a method of controlling the same |
01/07/2009 | CN100449640C Ferroelectric or electret memory circuit |
01/07/2009 | CN100449639C Magneto-electronic component for high density memory |
01/07/2009 | CN100449638C MTJ MRAM parallel-parallel architecture |
01/06/2009 | US7474585 Memory with serial input-output terminals for address and data and method therefor |
01/06/2009 | US7474584 Semiconductor device |
01/06/2009 | US7474582 Systems and methods for managing power |
01/06/2009 | US7474568 Non-volatile memory with programming through band-to-band tunneling and impact ionization gate current |
01/06/2009 | US7474567 Method for programming multi-level nitride read-only memory cells |
01/06/2009 | US7474565 Programming scheme for non-volatile flash memory |
01/06/2009 | US7474564 Non-volatile memory device capable of changing increment of program voltage according to mode of operation |
01/06/2009 | US7474562 Method of forming and operating an assisted charge memory device |
01/06/2009 | US7474561 Variable program voltage increment values in non-volatile memory program operations |
01/06/2009 | US7474560 Non-volatile memory with both single and multiple level cells |
01/06/2009 | US7474558 Gated diode nonvolatile memory cell array |
01/06/2009 | US7474557 MRAM array and access method thereof |
01/06/2009 | US7474556 Phase-change random access memory device |
01/06/2009 | US7474555 Integrated circuit including resistivity changing material element |
01/06/2009 | US7474554 Magnetoresistance effect device having crystal grain boundary and method of manufacturing the same |
01/06/2009 | US7474553 Device writing to a plurality of rows in a memory matrix simultaneously |
01/06/2009 | US7474552 Integrated semiconductor memory device |
01/06/2009 | US7474550 Dynamic RAM-and semiconductor device |
01/06/2009 | US7474547 Active shielding for a circuit comprising magnetically sensitive materials |
01/06/2009 | US7473982 Point contact array, not circuit, and electronic circuit comprising the same |
01/06/2009 | US7473951 Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same |
01/06/2009 | US7473949 Ferroelectric capacitor and method of manufacturing the same |
01/06/2009 | US7473574 Memory element with improved contacts |
01/02/2009 | DE102007029371A1 Verfahren zum Verbergen defekter Speicherzellen und Halbleiterspeicher A method for hiding defective memory cells and semiconductor memory |
01/02/2009 | DE102007028870A1 Speicherbauteil, Datenverarbeitungssystem, Verfahren zum Einstellen von Betriebsparametern eines Speichers und Computerprogramms Memory device, data processing system, method for adjusting operating parameters of a computer program memory, and |
01/02/2009 | DE102005046426B4 MRAM und Verfahren zu dessen Herstellung MRAM and methods for its preparation |
01/01/2009 | US20090006880 System and method for power saving delay locked loop control |
01/01/2009 | US20090004803 Multi-stage implant to improve device characteristics |
01/01/2009 | US20090004791 Semiconductor switching devices and fabrication methods |
01/01/2009 | US20090003085 Nonvolatile memory system, semiconductor memory, and writing method |
01/01/2009 | US20090003083 Memory cell with voltage modulated sidewall poly resistor |
01/01/2009 | US20090003082 Method of making memory cell with voltage modulated sidewall poly resistor |
01/01/2009 | US20090003081 Non-volatile memory and method of manufacturing same |
01/01/2009 | US20090003079 Method and circuit for performing read operation in a nand flash memory |
01/01/2009 | US20090003078 Program-verify method |
01/01/2009 | US20090003070 Semiconductor memory device |
01/01/2009 | US20090003069 Non-volatile storage with source bias all bit line sensing |
01/01/2009 | US20090003065 Flash cell with improved program disturb |
01/01/2009 | US20090003061 Select gate transistors and methods of operating the same |
01/01/2009 | US20090003060 High density NOR flash array architecture |
01/01/2009 | US20090003059 Segmented bit line for flash memory |
01/01/2009 | US20090003054 Double programming methods of a multi-level-cell nonvolatile memory |
01/01/2009 | US20090003051 Semiconductor Memory Device and Semiconductor Device |
01/01/2009 | US20090003050 Floating body memory array |
01/01/2009 | US20090003049 Phase change memory device and program method thereof |
01/01/2009 | US20090003048 Nonvolatile memory device using a variable resistive element and associated operating method |
01/01/2009 | US20090003047 Resistance change memory device |
01/01/2009 | US20090003046 Memory with dynamic redundancy configuration |
01/01/2009 | US20090003045 Cmos-process-compatible programmable via device |
01/01/2009 | US20090003044 Program method with locally optimized write parameters |
01/01/2009 | US20090003043 Method for switching magnetic moment in magnetoresistive random access memory with low current |
01/01/2009 | US20090003042 Magnetic memory device using domain structure and multi-state of ferromagnetic material |
01/01/2009 | US20090003041 Semiconductor memory device and read method thereof |
01/01/2009 | US20090003038 Capacitor supported precharching of memory digit lines |
01/01/2009 | US20090003037 Integrated circuit with memory having a current limiting switch |