Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2009
01/08/2009US20090010067 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
01/08/2009US20090010063 Nand type flash memory and write method of the same
01/08/2009US20090010056 Method and apparatus for capacitorless double-gate storage
01/08/2009US20090010055 One-transistor type DRAM
01/08/2009US20090010054 Semiconductor memory device with ferroelectric device
01/08/2009US20090010053 Combo memory cell
01/08/2009US20090010052 One-transistor type dram
01/08/2009US20090010051 Reading a phase change memory
01/08/2009US20090010050 Calibration system for writing and reading multiple states into phase change memory
01/08/2009US20090010049 Phase change memory device
01/08/2009US20090010048 Memory device including a programmable resistance element
01/08/2009US20090010047 Writing circuit for a phase change memory
01/08/2009US20090010046 magnetic memory device with non-rectangular cross section current carrying conductors
01/08/2009US20090010045 Magnetoresistive random access memory
01/08/2009US20090010044 Toggle Magnetic Random Access Memory and Write Method of Toggle Magnetic Random Access Memory
01/08/2009US20090010043 Configurable SRAM System and Method
01/08/2009US20090010042 Semiconductor integrated circuit device
01/08/2009US20090010041 Hybrid DRAM
01/08/2009US20090010040 Resistance change memory device
01/08/2009US20090010039 Non-volatile memory device
01/08/2009US20090010038 Low resistance plate line bus architecture
01/08/2009US20090010037 Semiconductor memory device with ferroelectric device
01/08/2009US20090009236 Step-down circuit with stabilized output voltage
01/08/2009DE102008028514A1 Speicherzellenanordnung und Steuerverfahren dafür Memory cell array and control method thereof
01/08/2009DE102007031411A1 Integrierte Schaltung und Verfahren zum Umladen eines Schaltungsteils der integrierten Schaltung Integrated circuit and method for transferring a circuit part of the integrated circuit
01/08/2009DE102005046739B4 Ein quasi-selbstpositionierender MRAM-Kontakt A quasi-self-positioning MRAM Contact
01/08/2009DE102004031140B4 MRAM-Speichervorrichtung MRAM memory device
01/07/2009EP2012323A2 Use of gamma hardened RFID tags in pharmaceutical devices
01/07/2009EP2011146A1 Dynamic memory cell structures
01/07/2009CN101341469A Method for recognizing a power outage in a data memory and recovering the data memory
01/07/2009CN101339805A Phase change memory cell storage of high reading speed, low operating interference and operating method thereof
01/07/2009CN101339804A Circuit and method for an sram with two phase word line pulse
01/07/2009CN101339803A Temperature sensor circuit and calibration method thereof
01/07/2009CN100449814C Magneto-resistance effect element, magnetic memory and magnetic head
01/07/2009CN100449770C Intrgrated magnetoresistive semiconductor memory arrangement
01/07/2009CN100449761C Semiconductor storage device
01/07/2009CN100449647C Programming a phase-change material memory
01/07/2009CN100449645C Dynamic semiconductor memory device
01/07/2009CN100449644C Multiple data state memory cell
01/07/2009CN100449643C Reference voltage generating circuit and internal voltage generating circuit for controlling internal voltage level
01/07/2009CN100449642C Method and apparatus to program a phase change memory
01/07/2009CN100449641C Non-volatile memory cell and a method of controlling the same
01/07/2009CN100449640C Ferroelectric or electret memory circuit
01/07/2009CN100449639C Magneto-electronic component for high density memory
01/07/2009CN100449638C MTJ MRAM parallel-parallel architecture
01/06/2009US7474585 Memory with serial input-output terminals for address and data and method therefor
01/06/2009US7474584 Semiconductor device
01/06/2009US7474582 Systems and methods for managing power
01/06/2009US7474568 Non-volatile memory with programming through band-to-band tunneling and impact ionization gate current
01/06/2009US7474567 Method for programming multi-level nitride read-only memory cells
01/06/2009US7474565 Programming scheme for non-volatile flash memory
01/06/2009US7474564 Non-volatile memory device capable of changing increment of program voltage according to mode of operation
01/06/2009US7474562 Method of forming and operating an assisted charge memory device
01/06/2009US7474561 Variable program voltage increment values in non-volatile memory program operations
01/06/2009US7474560 Non-volatile memory with both single and multiple level cells
01/06/2009US7474558 Gated diode nonvolatile memory cell array
01/06/2009US7474557 MRAM array and access method thereof
01/06/2009US7474556 Phase-change random access memory device
01/06/2009US7474555 Integrated circuit including resistivity changing material element
01/06/2009US7474554 Magnetoresistance effect device having crystal grain boundary and method of manufacturing the same
01/06/2009US7474553 Device writing to a plurality of rows in a memory matrix simultaneously
01/06/2009US7474552 Integrated semiconductor memory device
01/06/2009US7474550 Dynamic RAM-and semiconductor device
01/06/2009US7474547 Active shielding for a circuit comprising magnetically sensitive materials
01/06/2009US7473982 Point contact array, not circuit, and electronic circuit comprising the same
01/06/2009US7473951 Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
01/06/2009US7473949 Ferroelectric capacitor and method of manufacturing the same
01/06/2009US7473574 Memory element with improved contacts
01/02/2009DE102007029371A1 Verfahren zum Verbergen defekter Speicherzellen und Halbleiterspeicher A method for hiding defective memory cells and semiconductor memory
01/02/2009DE102007028870A1 Speicherbauteil, Datenverarbeitungssystem, Verfahren zum Einstellen von Betriebsparametern eines Speichers und Computerprogramms Memory device, data processing system, method for adjusting operating parameters of a computer program memory, and
01/02/2009DE102005046426B4 MRAM und Verfahren zu dessen Herstellung MRAM and methods for its preparation
01/01/2009US20090006880 System and method for power saving delay locked loop control
01/01/2009US20090004803 Multi-stage implant to improve device characteristics
01/01/2009US20090004791 Semiconductor switching devices and fabrication methods
01/01/2009US20090003085 Nonvolatile memory system, semiconductor memory, and writing method
01/01/2009US20090003083 Memory cell with voltage modulated sidewall poly resistor
01/01/2009US20090003082 Method of making memory cell with voltage modulated sidewall poly resistor
01/01/2009US20090003081 Non-volatile memory and method of manufacturing same
01/01/2009US20090003079 Method and circuit for performing read operation in a nand flash memory
01/01/2009US20090003078 Program-verify method
01/01/2009US20090003070 Semiconductor memory device
01/01/2009US20090003069 Non-volatile storage with source bias all bit line sensing
01/01/2009US20090003065 Flash cell with improved program disturb
01/01/2009US20090003061 Select gate transistors and methods of operating the same
01/01/2009US20090003060 High density NOR flash array architecture
01/01/2009US20090003059 Segmented bit line for flash memory
01/01/2009US20090003054 Double programming methods of a multi-level-cell nonvolatile memory
01/01/2009US20090003051 Semiconductor Memory Device and Semiconductor Device
01/01/2009US20090003050 Floating body memory array
01/01/2009US20090003049 Phase change memory device and program method thereof
01/01/2009US20090003048 Nonvolatile memory device using a variable resistive element and associated operating method
01/01/2009US20090003047 Resistance change memory device
01/01/2009US20090003046 Memory with dynamic redundancy configuration
01/01/2009US20090003045 Cmos-process-compatible programmable via device
01/01/2009US20090003044 Program method with locally optimized write parameters
01/01/2009US20090003043 Method for switching magnetic moment in magnetoresistive random access memory with low current
01/01/2009US20090003042 Magnetic memory device using domain structure and multi-state of ferromagnetic material
01/01/2009US20090003041 Semiconductor memory device and read method thereof
01/01/2009US20090003038 Capacitor supported precharching of memory digit lines
01/01/2009US20090003037 Integrated circuit with memory having a current limiting switch