Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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12/24/2014 | CN104241526A 相变化存储器、其写入方法及其读取方法 Phase change memory write method and reading method |
12/24/2014 | CN104240757A 一种阻变存储器存储单元的多值操作方法 A multi-value method of operation of the resistive memory cell |
12/24/2014 | CN104240754A 阻变存储器件和装置及其制造方法、操作方法以及系统 Resistive memory device and manufacturing method and apparatus, the operating method and system |
12/24/2014 | CN104240753A 突触阵列、脉冲整形电路和神经形态系统 Synapse array, pulse shaping circuits and neuromorphic systems |
12/24/2014 | CN104240752A 半导体器件、半导体系统以及半导体器件的控制方法 Control method of a semiconductor device, a semiconductor device and semiconductor system |
12/24/2014 | CN104240751A 存储系统、半导体器件及其操作方法 Storage systems, and methods of operating the semiconductor device |
12/24/2014 | CN104240750A 动态随机存取存储器装置 Dynamic random access memory device |
12/24/2014 | CN102422359B 通过动态随机存储器体现静态随机存储器输出特性的装置及方法 Apparatus and method reflects the output characteristics of static random access memory by dynamic random access memory |
12/24/2014 | CN102334165B 用于存储器阵列的动态泄漏控制 Leakage control for dynamic memory array |
12/24/2014 | CN101689397B 具有高可靠性的非易失存储器 Having high reliability non-volatile memory |
12/24/2014 | CN101421793B Nand存储器装置列充电 Nand memory device charging column |
12/23/2014 | US8918669 Mesochronous signaling system with clock-stopped low power mode |
12/23/2014 | US8918667 Mesochronous signaling system with core-clock synchronization |
12/23/2014 | US8917568 Method of operating PSRAM and related memory device |
12/23/2014 | US8917567 Semiconductor device having hierarchical bit line structure and control method thereof |
12/23/2014 | US8917563 Semiconductor device and information processing system including an input circuit with a delay |
12/23/2014 | US8917562 Body voltage sensing based short pulse reading circuit |
12/23/2014 | US8917560 Half bit line high level voltage genertor, memory device and driving method |
12/23/2014 | US8917559 Multiple write operations without intervening erase |
12/23/2014 | US8917557 Nonvolatile semiconductor memory device |
12/23/2014 | US8917556 Nonvolatile memory device having 3D memory cell array and read method |
12/23/2014 | US8917553 Non-volatile memory programming |
12/23/2014 | US8917552 Nonvolatile semiconductor storage device |
12/23/2014 | US8917551 Flexible 2T-based fuzzy and certain matching arrays |
12/23/2014 | US8917550 Apparatus comparing verified data to original data in the programming of memory cells |
12/23/2014 | US8917549 NOR flash memory array structure, mixed nonvolatile flash memory and memory system comprising the same |
12/23/2014 | US8917548 Non-volatile semiconductor memory device |
12/23/2014 | US8917547 Complementary SOI lateral bipolar for SRAM in a CMOS platform |
12/23/2014 | US8917546 Method and apparatus for increasing the reliability of an access transitor coupled to a magnetic tunnel junction (MTJ) |
12/23/2014 | US8917545 Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same |
12/23/2014 | US8917544 Phase change memory device, operation method thereof, and data storage device having the same |
12/23/2014 | US8917543 Multi-state spin-torque transfer magnetic random access memory |
12/23/2014 | US8917542 Unidirectional spin torque transfer magnetic memory cell structure |
12/23/2014 | US8917541 Magnetoresistance effect element and magnetic memory |
12/23/2014 | US8917540 Memory device with soft-decision decoding |
12/23/2014 | US8917539 Solid, multi-state molecular random access memory |
12/23/2014 | US8917538 Nonvolatile semiconductor memory device |
12/23/2014 | US8917537 Inline fuses in programmable crossbar arrays |
12/23/2014 | US8917536 Adaptive reference scheme for magnetic memory applications |
12/23/2014 | US8917535 Variable resistance memory device and related method of operation |
12/23/2014 | US8917534 Path isolation in a memory device |
12/23/2014 | US8917485 Magnetoresistive effect element, magnetic head, and magnetic disk apparatus |
12/23/2014 | US8917112 Bidirectional level shifter |
12/18/2014 | US20140372669 Memory control system and memory interface method using the same |
12/18/2014 | US20140369148 Memory module and memory system |
12/18/2014 | US20140369147 Power converter for a memory module |
12/18/2014 | US20140369115 Semiconductor device, method for fabricating the same, and memory system including the semiconductor device |
12/18/2014 | US20140369112 Semiconductor memory |
12/18/2014 | US20140369111 Semiconductor Memory Device And Method For Driving The Same |
12/18/2014 | US20140369110 Semiconductor memory device and semiconductor package |
12/18/2014 | US20140369109 Semiconductor memory device and memory system including the same |
12/18/2014 | US20140367681 Semiconductor device |
12/17/2014 | CN104221090A 电阻式器件及其操作方法 Resistive device and operating method thereof |
12/17/2014 | CN104218035A 一种磁隧道结单元及自旋电子器件 A magnetic tunnel junction unit and spintronic devices |
12/17/2014 | CN104217753A Sram单元 Sram unit |
12/17/2014 | CN104217752A 多端口存储器系统和用于多端口存储器的写电路和读电路 And a multi-port memory system circuit and read circuit for writing multi-port memory |
12/17/2014 | CN102831935B 相变存储器单元的脉冲iv特性测试方法和装置 Pulse iv characteristic test method and apparatus of phase change memory cells |
12/17/2014 | CN102593141B 一种电场调制型随机存储单元阵列及存储器 An electric field modulation type random access memory cell array and memory |
12/17/2014 | CN102549673B 用较小通道电压干扰和浮栅极到控制栅极泄漏对存储器编程 With a smaller channel interference and the floating gate voltage to the control gate leakage memory programming |
12/17/2014 | CN102467954B 切换向平面外的磁性隧道结单元的方法 Switching to the outer plane of a magnetic tunnel junction element method |
12/17/2014 | CN102439745B 磁电子器件和测量方法 Electronic devices and magnetic measurements |
12/17/2014 | CN101996676B 半导体存储器装置、控制器和半导体存储器系统 A semiconductor memory device, a controller and a semiconductor memory system |
12/16/2014 | US8914692 DRAM test architecture for wide I/O DRAM based 2.5D/3D system chips |
12/16/2014 | US8913459 Semiconductor device including plural chips stacked to each other |
12/16/2014 | US8913455 Dual port memory cell |
12/16/2014 | US8913446 Nonvolatile semiconductor memory device |
12/16/2014 | US8913443 Voltage regulation for 3D packages and method of manufacturing same |
12/16/2014 | US8913442 Circuit for sensing MLC flash memory |
12/16/2014 | US8913440 Tracking mechanisms |
12/16/2014 | US8913439 Memory device and corresponding reading method |
12/16/2014 | US8913437 Inter-cell interference cancellation |
12/16/2014 | US8913430 Non-volatile memory device |
12/16/2014 | US8913429 Nonvolatile semiconductor memory device |
12/16/2014 | US8913428 Programming non-volatile storage system with multiple memory die |
12/16/2014 | US8913427 Semiconductor memory device and method of operating the same |
12/16/2014 | US8913426 Read distribution management for phase change memory |
12/16/2014 | US8913425 Phase change memory mask |
12/16/2014 | US8913424 Magnetic enhancement layer in memory cell |
12/16/2014 | US8913423 Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) |
12/16/2014 | US8913422 Decreased switching current in spin-transfer torque memory |
12/16/2014 | US8913421 Writing to a memory cell |
12/16/2014 | US8913420 Random access memory controller having common column multiplexer and sense amplifier hardware |
12/16/2014 | US8913419 Semiconductor memory device and driving method thereof |
12/16/2014 | US8913417 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
12/16/2014 | US8913416 Variable-resistance memory device and its operation method |
12/16/2014 | US8913414 Semiconductor apparatus and semiconductor system for outputting internal information according to various mode and method for outputting internal information thereof |
12/16/2014 | US8913411 Method for modifying data more than once in a multi-level cell memory location within a memory array |
12/16/2014 | US8913350 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements |
12/16/2014 | US8913182 Portable hand-held device having networked quad core processor |
12/16/2014 | US8913151 Digital camera with quad core processor |
12/16/2014 | US8913137 Handheld imaging device with multi-core image processor integrating image sensor interface |
12/16/2014 | US8912518 Resistive random access memory cells having doped current limiting layers |
12/16/2014 | US8912013 Magnetic tunnel junction device and fabrication |
12/16/2014 | US8912012 Magnetic tunnel junction device and fabrication |
12/16/2014 | US8911888 Three-dimensional magnetic memory with multi-layer data storage layers |
12/11/2014 | US20140362653 Memory control device and a delay controller |
12/11/2014 | US20140362639 Integrated Circuit With Separate Supply Voltage For Memory That Is Different From Logic Circuit Supply Voltage |
12/11/2014 | US20140362638 Structure and method for adjusting threshold voltage of the array of transistors |
12/11/2014 | US20140362637 Memory device, memory system, and operation method thereof |
12/11/2014 | US20140362636 Capacitor backup for sram |