| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/03/2011 | WO2011024854A1 Silicon carbide epitaxial wafer and manufacturing method therefor |
| 03/03/2011 | WO2011023893A1 Method for cleaning the surface of a silicon substrate |
| 03/03/2011 | WO2011023749A1 Method for producing wafers |
| 03/03/2011 | WO2010147625A3 Systems and methods for determining process conditions in confined volumes |
| 03/02/2011 | EP2290137A1 Method for the synthesis of metallic nanotubes and nanotubes synthesized by the method |
| 03/02/2011 | EP2290136A1 Method for achieving improved epitaxy quality (surface texture and defect densitity) on free-standing (aluminum, indium, gallium) nitride ((Al, In, Ga)N) substrates for opto-electronic and electronic devices |
| 03/02/2011 | EP2290135A1 Method for achieving improved epitaxy quality (surface texture and defect densitity) on free-standing (aluminum, indium, gallium) nitride ((Al, In, Ga)N) substrates for opto-electronic and electronic devices |
| 03/02/2011 | EP1874985B1 Method of and system for forming sic crystals having spatially uniform doping impurities |
| 03/02/2011 | EP1536043B1 N-type semiconductor diamond producing method and semiconductor diamond |
| 03/02/2011 | CN201753373U Synthetic diamond electrolyte circulating device |
| 03/02/2011 | CN201753371U Cover for production of epitaxial wafer |
| 03/02/2011 | CN101983263A Zinc oxide single crystal and method for producing the same |
| 03/02/2011 | CN101983262A Quartz glass crucible and process for producing the same |
| 03/02/2011 | CN101982569A Position control method and device for silicone liquid level of czochralski crystal grower |
| 03/02/2011 | CN101982568A Method for growing strontium iodide scintillating crystals by nonvacuum crucible descent method |
| 03/01/2011 | US7897938 Scintillator panel |
| 03/01/2011 | CA2443192C Stabilised zirconium oxide for an observation window |
| 02/24/2011 | WO2011021710A1 Semiconductor element and production method thereof |
| 02/24/2011 | WO2011020996A1 PREPARATION OF FePt AND CoPt NANOPARTICLES |
| 02/24/2011 | WO2011020175A1 Rare earth-doped sapphire films and related methods |
| 02/24/2011 | WO2010129718A3 Method and reactor for growing gallium nitride crystals using ammonia and hydrogen chloride |
| 02/24/2011 | DE112009000195T5 Verfahren zum Herstellen eines III-Metall-Nitrid-Einkristalls A method of preparing a group III metal nitride single crystal |
| 02/24/2011 | DE102009037286A1 Producing a single crystal from silicon through zone-pulling, comprises doping the single crystal with a doping material and producing longitudinal sections of the single crystal, in which the single crystal has a constant resistivity |
| 02/24/2011 | DE102006029830B4 Verfahren und Vorrichtung zur Herstellung pyroelektrischer Einkristalle Method and apparatus for manufacturing single crystals pyroelectric |
| 02/24/2011 | DE102004028331B4 Verfahren zum Kristallisieren von Silicium Method of crystallizing silicon |
| 02/23/2011 | EP2287919A2 Solar cells having nanowires and methods of fabricating nanowires |
| 02/23/2011 | EP2287370A1 A l X G a 1-X N SINGLE CRYSTAL AND ELECTROMAGNETIC WAVE TRANSMISSION BODY |
| 02/23/2011 | EP2287369A1 Method for manufacturing silicon single crystal |
| 02/23/2011 | EP2287368A2 Apparatus and method for producing (Ai, Ga, In)N material using an in-situ laser for parting this material |
| 02/23/2011 | EP2287367A1 Single crystal manufacturing device and manufacturing method |
| 02/23/2011 | EP2286459A1 Ultratough single crystal boron-doped diamond |
| 02/23/2011 | EP2286007A1 Method for testing group-iii nitride wafers and group iii-nitride wafers with test data |
| 02/23/2011 | EP2286006A1 Methods and apparatus for deposition reactors |
| 02/23/2011 | EP1664395B1 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| 02/23/2011 | CN101981677A Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element |
| 02/23/2011 | CN101981658A Epitaxial substrate for semiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element |
| 02/23/2011 | CN101981237A AlxGa(1-x)As substrate, epitaxial wafer for infrared LED, infrared LED, method for production of AlxGa(1-x)As substrate, method for production of epitaxial wafer for infrared LED, and method for production of infrared LED |
| 02/23/2011 | CN101980066A Polarization microscope device for polymer crystallization process under observable ultrasonic condition |
| 02/23/2011 | CN101979723A Method for preparing p-type CdS nanowires |
| 02/23/2011 | CN101979722A DyTiO3 single crystal material with low-magnetic-field giant magnetocaloric effect and preparation method thereof |
| 02/23/2011 | CN101979721A Silicon core rods and silicon core structure for growth of polycrystalline silicon |
| 02/23/2011 | CN101979719A Method for producing gas phase heavy phosphorus-doped float zone silicon single crystal |
| 02/22/2011 | US7893454 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device |
| 02/22/2011 | US7892970 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
| 02/22/2011 | US7892879 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/22/2011 | US7892370 Heat treatment method for monocrystalline or directionally solidified structural components |
| 02/22/2011 | US7892356 Diamond composite substrate and process for producing the same |
| 02/22/2011 | CA2618326C Method for manufacturing scorodite |
| 02/17/2011 | WO2011019012A1 Production device for silica glass crucible and production method for silica glass crucible |
| 02/17/2011 | DE112009000526T5 Einkristallherstellungsvorrichtung und Verfahren zur Herstellung eines Einkristalls Einkristallherstellungsvorrichtung and method for producing a single crystal |
| 02/17/2011 | DE112008003609T5 Vorrichtung zur Herstellung eines Einkristalls An apparatus for producing a single crystal |
| 02/16/2011 | EP2284298A2 Optical quality diamond material |
| 02/16/2011 | EP2284297A1 Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminium, indium, gallium) nitride ((AI, In,Ga)N) substrates for opto-electronic and electronic devices |
| 02/16/2011 | CN201746608U Silicon liquid smelting furnace |
| 02/16/2011 | CN201746607U Polycrystalline ingot furnace improved thermal field |
| 02/16/2011 | CN201746334U Polysilicon reducing furnace tail gas outlet structure with dust removing apparatus |
| 02/16/2011 | CN201746331U Polysilicon reducing surface |
| 02/16/2011 | CN1782142B Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
| 02/16/2011 | CN101978103A System and method for arranging heating element in crystal growth apparatus |
| 02/16/2011 | CN101978102A Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same |
| 02/16/2011 | CN101974783A Compound cesium lithium borate (CLBO) nonlinear optical crystal, preparation method and application thereof |
| 02/16/2011 | CN101974782A Method of preparing alpha-Al2O3 crystal whisker by carbothermal reduction |
| 02/16/2011 | CN101974781A Method for preparing ZnO nano-rod array at normal temperature and normal pressure |
| 02/16/2011 | CN101974780A Growth process of polycrystal ingot casting crystal |
| 02/16/2011 | CN101974779A Method for preparing (110) float zone silicon crystal |
| 02/16/2011 | CN101974778A Preparation method of barium titanium silicate crystal |
| 02/16/2011 | CN101338453B Growth method of large size non-core YAG series laser crystal |
| 02/16/2011 | CN101122047B Method for manufacturing polycrystalline silicon used for solar battery |
| 02/15/2011 | US7889842 Doped lithium fluoride monochromator for X-ray analysis |
| 02/15/2011 | US7888848 Piezoelectric single crystal device and fabrication method thereof |
| 02/15/2011 | US7887883 Composition and method for low temperature deposition of silicon-containing films |
| 02/15/2011 | US7887632 Process for producing monocrystal thin film and monocrystal thin film device |
| 02/15/2011 | US7887631 System and high pressure, high temperature apparatus for producing synthetic diamonds |
| 02/15/2011 | US7887628 Chemical vapor deposited diamond having a thickness of >2 mm of high purity/quality; single impurity of not greater than 1 ppm and a total impurity content of not greater than 5 ppm; high value electron mobility, wide band gap device; anvils |
| 02/10/2011 | WO2011017439A1 Critical current density enhancement via incorporation of nanoscale ba2renbo6 in rebco films |
| 02/10/2011 | WO2011017392A1 Vertically-aligned nanopillar array on biaxially-textured substrates for nanoelectronics and energy conversion applications |
| 02/10/2011 | WO2011016837A1 Large area deposition and doping of graphene, and products including the same |
| 02/10/2011 | WO2011016836A2 Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same |
| 02/10/2011 | WO2011016828A2 Large area deposition of graphene hetero-epitaxial growth, and products including the same |
| 02/10/2011 | WO2011016177A1 Silica vessel and process for producing same |
| 02/10/2011 | WO2011016167A1 Silicon oxide removal apparatus, and inert gas collection facility for silicon monocrystal production apparatus |
| 02/10/2011 | US20110033718 ZnO THIN FILM |
| 02/10/2011 | DE112009000360T5 Verfahren zum Wachsen eines Siliziumkarbideinkristalls A method for growing a silicon carbide single crystal |
| 02/10/2011 | DE10320133B4 Verfahren zur Herstellung von einkristallinen oder quasi-einkristallinen Diamantschichten und auf einem Körper angeordnete einkristalline oder quasi-einkristalline Diamantschicht A process for the production of single crystalline or quasi-single-crystalline diamond layers and arranged on a body monocrystalline or quasi-monocrystalline diamond layer |
| 02/10/2011 | DE102009028256A1 Etching silicon carbide by plasma etching process, comprises etching silicon carbide with first ionized process gas, which contains fluorine-containing gas, and etching silicon carbide with second ionized process gas, which contains oxygen |
| 02/09/2011 | EP2281300A2 Methods and apparatus for a chemical vapor deposition reactor |
| 02/09/2011 | EP2281076A1 Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
| 02/09/2011 | EP2280691A1 Stable crystal modifications of dopc |
| 02/09/2011 | EP1559814B1 Process for producing crystalline nucleus and method of screening crystallization conditions |
| 02/09/2011 | CN1965112B III group nitride crystal and method for preparation thereof, and III group nitride crystal substrate and semiconductor device |
| 02/09/2011 | CN101970728A Single-crystal manufacturing apparatus and method for manufacturing single crystal |
| 02/09/2011 | CN101970708A Thin film of aluminum nitride and process for producing the thin film of aluminum nitride |
| 02/09/2011 | CN101970362A Quartz glass crucible |
| 02/09/2011 | CN101970351A Apparatus including a plasma torch for purifying a semiconductor material |
| 02/09/2011 | CN101967681A Method for growing zinc telluride (ZnTe) sextic symmetric multi-branched hierarchical nano-structure |
| 02/09/2011 | CN101967680A Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate |
| 02/09/2011 | CN101967679A Method and adjusting and controlling appearance of zinc oxide whisker |
| 02/09/2011 | CN101967678A Method for preparing thallium-doped caesium iodide (CsI:T1) film |
| 02/09/2011 | CN101967676A Surface modified quartz glass crucible and a process for modifying the crucible |
| 02/09/2011 | CN101967675A Device for manufacturing single crystal ingots |