C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
05/2011
05/11/2011	EP2318574A1 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation
05/11/2011	EP1600530B1 (001)-orientated perovskite film formation method and device having perovskite film
05/11/2011	EP1268882B1 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide
05/11/2011	CN201826035U Silicon core bar and silicon core structure for growth of polycrystalline silicon
05/11/2011	CN201823519U Novel alpha type crystal lattice chlorothalonil production device
05/11/2011	CN1936112B Low defect density silicon
05/11/2011	CN102057084A Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same
05/11/2011	CN102056592A Stable crystal modifications of DOPC
05/11/2011	CN102051689A Preparation method of metal/alloy nanoparticle-semiconductor nanowire or nanorod composite nano system
05/11/2011	CN102051688A Method for preparing giant field induced strain barium titanate single crystal
05/11/2011	CN102051687A Method for preparing gold crystals by adopting surface active agent molecule C18N3
05/11/2011	CN102051686A Method and device for growing large-size sodium yttrium tungstate crystals by two-stage heating and pulling process
05/11/2011	CN102051685A Novel ferroelectric single-crystal lead ytterbium niobate-lead magnesium niobate-lead titanate
05/11/2011	CN102051684A Method for growing thulium-holmium-codoped yttrium calcium aluminate laser crystal
05/11/2011	CN102051683A Nonlinear optical crystal molybdenum manganese selenite
05/11/2011	CN102051682A Dysprosium doped lead fluoride crystal and preparation method thereof
05/11/2011	CN102051681A Seed crystal for preparing single crystal silicon
05/11/2011	CN102051680A Rapid preparation method of gold nano rod with small aspect ratio
05/11/2011	CN102051679A Hot door and polycrystalline ingot furnace
05/11/2011	CN102051678A Magnesium alloy preparation device capable of controlling grain orientation
05/11/2011	CN102051677A Method for growing graphene on large-diameter 6H-SiC carbon surface
05/11/2011	CN102051676A In-situ grown tantalum carbide whisker material and preparation method thereof
05/11/2011	CN102051675A Method for manufacturing CuO nanowire
05/11/2011	CN102051674A Monocrystal ingot manufacturing device
05/11/2011	CN102051673A Graded-index birefringent crystal growth method
05/11/2011	CN102051672A Vertical temperature grade kyropoulos method for growing large-size high-temperature oxide crystals
05/11/2011	CN102051671A Device for producing a single crystal composed of silicon by remelting granules
05/11/2011	CN102051667A Method for studying in-situ growing process of MnMo04.H20 nanorod
05/11/2011	CN102049527A Nanocrystal with core-shell structure and preparation method thereof
05/11/2011	CN101698937B Preparation method of columnar monocrystal nano-TiO2 array film
05/11/2011	CN101591803B High-temperature carborundum double-chamber hot wall type epitaxial growth device
05/11/2011	CN101560647B Preparation method of GaN-based material featuring epitaxial layer growth
05/11/2011	CN101550599B Preparation method of boron nitride crystal whisker
05/11/2011	CN101514493B In-situ grown titanium carbonitride crystal whisker materials and preparation method thereof
05/11/2011	CN101476162B Method for synthesizing flower shaped ZnSe semiconductor nanocrystalline
05/11/2011	CN101343773B Sodium sulfate wastewater liquid phase method in situ preparation of hydrophobic calcium sulphate crystal whisker
05/11/2011	CN101319389B Preparation method of gadolinium gallium garnet planar interface crystal
05/11/2011	CN101074493B Method for synthesizing supefine CdSe and CdTe nano-crystal
05/10/2011	US7939126 Halogenated yttrium acetate, barium trifluoroacetate, and a copper propionate mixed with a nitrogen-containing solvent; treating to form thick and high quality intermediate of a yttrium-barium-copper intermediates; finishing to form a yttrium-barium-copper biaxially oriented film; high speed processing
05/10/2011	CA2660075C Method and apparatus for preparation of granular polysilicon
05/10/2011	CA2654896C Method for continual preparation of polycrystalline silicon using a fluidized bed reactor
05/05/2011	WO2011053564A1 Method of making an article of semiconducting material
05/05/2011	WO2011052321A1 Silicon carbide substrate production method and silicon carbide substrate
05/05/2011	WO2011052320A1 Silicon carbide substrate production method and silicon carbide substrate
05/05/2011	WO2010119792A9 Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
05/05/2011	WO2010062735A3 Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
05/05/2011	US20110104438 AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT
05/05/2011	DE112009001167T5 Gießen mit hohem Temperaturgradienten bei dichter Anordnung von gerichtet erstarrten Gussteilen Pour directed at high temperature gradients in high-density array of solidified castings
05/05/2011	DE102009051823A1 Einkristallines Schweißen von direktional verfestigten Werkstoffen Monocrystalline welding of directionally solidified materials
05/05/2011	CA2764900A1 Method for manufacturing silicon carbide substrate and silicon carbide substrate
05/05/2011	CA2759852A1 Method for manufacturing silicon carbide substrate and silicon carbide substrate
05/04/2011	EP2317078A2 Abrasive single-crystal turbine blade
05/04/2011	EP2316989A2 Non-polar (Al, B, In, Ga) quantum well and heterostructure materials and devices
05/04/2011	EP1786956B1 Method and system with seed holder for growing silicon carbide single crystals
05/04/2011	EP1369708B1 Method of producing an optical member for a projection aligner
05/04/2011	CN201817577U Heat-insulating cage and ingot furnace with same
05/04/2011	CN201817576U System of making polycrystalline ingots
05/04/2011	CN201817570U Device for manufacturing single crystal ingots through directional solidification method
05/04/2011	CN201817569U System for manufacturing single crystal ingots
05/04/2011	CN201815202U Separating, dedusting and packaging system for burning of exhaust gases from polycrystalline silicon
05/04/2011	CN1649181B Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
05/04/2011	CN102046858A AlxGa1-xN single crystal and electromagnetic wave transmission body
05/04/2011	CN102046857A AlN bulk single crystal, semiconductor device, and process for producing AlN single crystal bulk
05/04/2011	CN102041556A Method for preparing monocrystalline one-dimensional or quasi one-dimensional organic nanomaterial by solution method
05/04/2011	CN102041555A Preparation method of CuInS2 nanocrystalline material
05/04/2011	CN102041554A Method for producing N-doped SiC nanowires with field emission properties
05/04/2011	CN102041553A Preparation method and application of crystalline-state beta-MnOOH nanowire
05/04/2011	CN102041552A Method for preparing polysilicon membrane
05/04/2011	CN102041551A Base material for growing single crystal diamond and method for producing single crystal diamond substrate
05/04/2011	CN102041549A Crystallizing and growing device of single crystal silicon
05/04/2011	CN102041547A Method for preparing phosphor-doped zinc oxide nanowires
05/04/2011	CN102041476A Method for preparing cobalt titanate film by dual-target magnetron sputtering method
05/04/2011	CN102040220A Manufacturing method of solar-grade polycrystalline silicon
05/04/2011	CN102040204A Method for casting ingots by using gallium phosphide polycrystal
05/04/2011	CN101586255B Preparation method of calcium sulphate dihydrate crystal whisker
05/04/2011	CN101545134B Method and device for preparing high-purity single crystal silicon bar by utilizing silicon material containing impurities
05/04/2011	CN101481822B Method for preparing beta-sialon crystal whisker by two-step reduction nitridation reaction
05/04/2011	CN101387008B Carbon nanotube growing apparatus
05/04/2011	CN101333683B Novel infrared non-linear crystal CsV2O5
05/04/2011	CN101323980B Large size vanadium sodium borate nonlinear optical crystal, and preparation and use thereof
05/04/2011	CN101311352B Method for preparing germanium of nanometer needle-shaped structure
05/04/2011	CN101220506B Method for high concentration mass-synthesis of silver nano-wire
05/04/2011	CN101210347B Method for preparing organic compound single-crystal nano structure
05/04/2011	CN101094732B Deposition of silicon-containing films from hexachlorodisilane
05/04/2011	CN101074491B Method for growing barium strontium titanate on metal titanium-based substrate
05/04/2011	CN101074490B Method for producing spherical, tie-shaped and octahedral polycrystalline Ce0.6Zr0.3Y0.1O2 particles of um sizes
05/03/2011	US7935617 Method to stabilize carbon in Si1-x-yGexCy layers
05/03/2011	US7935615 III-V nitride semiconductor substrate and its production method
05/03/2011	US7935550 Method of forming light-emitting device using nitride bulk single crystal layer
04/2011
04/28/2011	WO2011050170A2 Crystal growth methods and systems
04/28/2011	WO2011049102A1 Single crystal, process for producing same, optical isolator, and optical processor using same
04/28/2011	WO2011048474A1 Device for obtaining a multicrystalline semiconductor material, in particular silicon, and method for controlling the temperature therein
04/28/2011	WO2011048473A1 Method and device for obtaining a multicrystalline semiconductor material, in particular silicon
04/28/2011	US20110097876 Chemical vapor deposition reactor having multiple inlets
04/28/2011	CA2779225A1 Process for continuous production of ductile microwires from glass forming systems
04/28/2011	CA2778173A1 Single crystal, production process of same, optical isolator and optical processor using same
04/27/2011	EP2314738A1 PROCESS FOR PRODUCTION OF A AlxGa(1-X)N SINGLE CRISTAL, AlxGa(1-X)N SINGEL CRISTAL, AND OPTICS
04/27/2011	EP2314737A2 Method of producing high purity semi-insulating single crystal silicon carbide wafer
04/27/2011	EP2314727A1 Nickle-based superalloys and articles
04/27/2011	EP2313543A2 Growth of planar non-polar {1-1 0 0} m-plane and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (hvpe)

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