| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/27/2011 | EP2313542A1 Systems and methods for growing monocrystalline silicon ingots by directional solidification |
| 04/27/2011 | EP1741808B1 InP SINGLE CRYSTAL WAFER AND InP SINGLE CRYSTAL MANUFACTURING METHOD |
| 04/27/2011 | CN201809175U Feeding fluidic device of horizontal polycrystalline silicon reduction furnace |
| 04/27/2011 | CN102037546A Methods of making an unsupported article of pure or doped semiconducting material |
| 04/27/2011 | CN102037165A Method for producing nanostructures on metal oxide substrate, and thin film device |
| 04/27/2011 | CN102037164A Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
| 04/27/2011 | CN102031566A All-organic one-dimensional photonic crystal based on surface plasma effect and preparation method thereof |
| 04/27/2011 | CN102031565A Polycrystal material with sulvanite structure and application thereof |
| 04/27/2011 | CN102031564A Gallium nitride substrate |
| 04/27/2011 | CN102031563A High-temperature-phase tellurium barium molybdate crystal as well as preparation method and applications thereof |
| 04/27/2011 | CN102031562A Non-linear optical crystal bismuth cadmium borate |
| 04/27/2011 | CN102031561A Base material for growing single crystal diamond and method for producing single crystal diamond substrate |
| 04/27/2011 | CN102031560A Method for preparing large-size GaN self-support substrate |
| 04/27/2011 | CN102031556A Growing process of polycrystalline cast ingot crystals |
| 04/27/2011 | CN102031498A Substrate support seat for III-V group thin film growth reaction chamber, reaction chamber thereof and process treatment method |
| 04/27/2011 | CN102031420A Nickle-based superalloys and articles |
| 04/27/2011 | CN102031419A Nickle-based superalloys and articles |
| 04/27/2011 | CN102031418A Nickel-based superalloys and articles |
| 04/27/2011 | CN102029400A Method for preparing silver nanometer wire with controllable wire diameter by cation control microwave method |
| 04/27/2011 | CN101602503B Method for graphene epitaxial growth on 4H-SiC silicon surface |
| 04/27/2011 | CN101591812B Production technology for brazing diamond polycrystal and used mold thereof |
| 04/27/2011 | CN101525707B Method for reducing tendency of TCP phase precipitation in nickel-base single crystal superalloy |
| 04/27/2011 | CN101514487B Method for preparation of silicon crystal with lower oxygen content |
| 04/27/2011 | CN101498037B Method for preparing single crystal silver nano-wire by plant biomass reduction |
| 04/27/2011 | CN101445960B Method for preparing adulteration monocrystalline zinc oxide nanometer brush by vapour deposition and device thereof |
| 04/27/2011 | CN101403138B Oxide nanocrystalline synthesis method |
| 04/27/2011 | CN101319459B Preparation of magnesium oxide crystal orientation membrane on fire resistant organic fibre |
| 04/27/2011 | CN101319382B Calcium sulphate crystal whisker preparation method with sea water bittern as raw material |
| 04/27/2011 | CN101187059B Silicon wafer having good intrinsic getterability and method for its production |
| 04/27/2011 | CN101168850B Silicon single crystal manufacturing method and silicon wafer manufacturing method |
| 04/27/2011 | CN101063233B Equipment for growth of horizontal chromium doped semi-insulation gallium arsenide |
| 04/26/2011 | US7931883 Metallurgical grade silicon produced in an electric arc furnace by carbothermal reduction contains <300 ppma boron and >100 ppma phosphorus; refinining by treating with calcium-silicate slag to remove boron 0.2-100 ppma; solidification, acid leaching, melting, directional solidification to an ingot |
| 04/26/2011 | CA2452542C Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
| 04/21/2011 | WO2011046203A1 Substrate, group-3b element nitride crystals, and process for producing same |
| 04/21/2011 | WO2011045888A1 Silica powder, silica container, and method for producing the silica powder and container |
| 04/21/2011 | WO2011016836A3 Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same |
| 04/21/2011 | US20110089433 Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal sic substrate and single crystal sic substrate |
| 04/21/2011 | DE202004021800U1 Halbleiterfilme aus einer quartären oder höheren Legierung der Gruppe I-III-VI Semiconductor films of a quaternary or higher alloy of group I-III-VI |
| 04/21/2011 | DE112009001014T5 AlxGa(1-x)As-Substrat, Epitaxialwafer für Infrarot-LEDs, Infrarot-LED, Verfahren zur Herstellung eines AlxGa(1-x)AS-Substrats, Verfahren zur Herstellung eines Epitaxialwafers für Infrarot-LEDs und Verfahren zur Herstellung von Infrarot-LEDs Al x Ga (1-x) As substrate, epitaxial wafer for infrared LEDs, infrared LEDs, process for preparing a Al x Ga (1-x) As substrate, process for producing an epitaxial wafer for infrared LEDs and method for the production of infrared LEDs |
| 04/21/2011 | DE10219387B4 Aus Kohlenfaser-verstärktem Kohlenstoffkompositmaterial hergestellter Schmelztiegel für ein Einkristallziehgerät Made of carbon fiber-reinforced carbon composite crucible for a Einkristallziehgerät |
| 04/21/2011 | DE102009048868A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer thermischen Behandlung und niederohmiges einkristallines SiC-Substrat Manufacturing method of a SiC bulk single crystal by means of a thermal treatment, and low-resistance single-crystal SiC substrate |
| 04/21/2011 | DE102006048409B4 Vorrichtung und Verfahren zur Herstellung von Schichten und/oder Kristallen aus Nitriden von Metallen der Gruppe III des PSE Device and method for the production of layers and / or crystals of nitrides of metals of group III of the PSE |
| 04/21/2011 | CA2777544A1 High growth rate deposition for group iii/v materials |
| 04/20/2011 | EP2312616A1 Film deposition method |
| 04/20/2011 | EP2312351A1 Optical waveguide material and optical waveguide |
| 04/20/2011 | EP2312023A2 Compound single crystal and method for producing the same |
| 04/20/2011 | EP2310321A1 Surface functionalised nanoparticles |
| 04/20/2011 | EP1957689B1 High crystalline quality synthetic diamond |
| 04/20/2011 | CN201801637U Multi-axis synchronous lifting device for thermal insulation cover of photovoltaic polysilicon ingot furnace |
| 04/20/2011 | CN201801636U Novel silicon chip production extension equipment and system comprising same |
| 04/20/2011 | CN201801630U Automatic crystal growing speed measuring device of photovoltaic polycrystalline silicon ingot production furnace |
| 04/20/2011 | CN1894093B Vicinal gallium nitride substrate for high quality homoepitaxy |
| 04/20/2011 | CN102026914A Pretreated metal fluorides and process for production of fluoride crystals |
| 04/20/2011 | CN102025099A Calcium fluoride optics with improved laser durability |
| 04/20/2011 | CN102021660A Polysilicon crucible sintering furnace |
| 04/20/2011 | CN102021655A Synthetic quartz wafer electric cleaning method |
| 04/20/2011 | CN102021654A Method for preparing magnetic nanotube |
| 04/20/2011 | CN102021653A Method for growing silicon carbide single crystal by using high-density material block |
| 04/20/2011 | CN102021652A Rare earth or Bi, Cr and Ti-doped IIA-family rare-earth oxide luminescent material and preparation method thereof |
| 04/20/2011 | CN102021651A Cerium-doped rare earth borate scintillating crystal and Bridgman preparation method thereof |
| 04/20/2011 | CN102021650A Production method of large polycrystalline ingot |
| 04/20/2011 | CN102021649A Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas |
| 04/20/2011 | CN102021647A Method for rapid growth of centimeter magnitude ruby crystal |
| 04/20/2011 | CN102021646A Thermal field structure of polycrystalline silicon crystal growing furnace |
| 04/20/2011 | CN102021645A Method for preparing polycrystalline silicon ingot with directional solidification microstructure |
| 04/20/2011 | CN102021644A Crystal silicon ingot casting furnace thermal field thermal door control device |
| 04/20/2011 | CN102021643A Method and device for directionally solidifying liquid-solid interface based on alternating magnetic field modulation |
| 04/20/2011 | CN102021641A Orientated seed crystal growth method of R2CaB10O19 single crystal |
| 04/20/2011 | CN102021640A Aluminum-barium fluoborate (BaAlBo3F2) non-linear optical crystal, and growth method and application thereof |
| 04/20/2011 | CN102021630A Coaxial heterogeneous ceric dioxide nanotube-titanium dioxide nanotube array thin film |
| 04/20/2011 | CN102021456A Method for determining directional solidification of once dendritic crystal spacing by controlling crystal growth rate |
| 04/20/2011 | CN102021455A Method for controlling primary dendritic spacing of directional solidification by adding rare earth La |
| 04/20/2011 | CN102020276A Method for utilizing waste heat in polycrystalline silicon production process |
| 04/20/2011 | CN102019433A Method for preparing core-shell type organic/inorganic composite silver nano-wire |
| 04/20/2011 | CN102019153A Method for compounding fine-particle cubic boron nitride single crystal |
| 04/20/2011 | CN101532179B Method for manufacturing silicon wafer on insulator |
| 04/20/2011 | CN101503192B Method for preparing polysilicon by plasma purification casting integrated furnace |
| 04/20/2011 | CN101435108B Large size nonlinear optical crystal lead bromoborate preparation method |
| 04/20/2011 | CN101319380B Method for rare earth 242 phase control component for growing superconducting block material |
| 04/20/2011 | CN101318640B Process for synthesizing CePO4 nano-material with monocline structure |
| 04/20/2011 | CN101200127B Lanthanum zirconic acid/yttrium titanate film material and method for making same |
| 04/20/2011 | CN101168851B Epitaxial silicon wafer and fabrication method thereof |
| 04/19/2011 | CA2451299C Nickel-base superalloy composition and its use in single-crystal articles |
| 04/14/2011 | WO2010056350A3 Methods for casting by a float process and associated appratuses |
| 04/13/2011 | EP2309040A1 Process for production of a i x ga (1-x )n single crystal,a i x ga(1-x) n single crystal and optical lensess |
| 04/13/2011 | EP2309039A1 Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
| 04/13/2011 | EP2309038A1 Epitaxial wafer and production method thereof |
| 04/13/2011 | EP2307309A2 Stable indium-containing semiconductor nanocrystals |
| 04/13/2011 | EP1741809B1 Electrostatic charge controlling process for piezoelectric oxide single crystal |
| 04/13/2011 | EP1490537B1 High pressure high temperature growth of crystalline group iii metal nitrides |
| 04/13/2011 | EP1195455B1 Method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer |
| 04/13/2011 | CN201793815U Temperature thermocouple sleeve evacuating device of photovoltaic polycrystalline silicon ingot furnace |
| 04/13/2011 | CN201793814U Graphite clamping petal |
| 04/13/2011 | CN201793809U Heavy hammer of silicon single crystal furnace |
| 04/13/2011 | CN201793805U High-temperature microwave silicon material smelting furnace |
| 04/13/2011 | CN201793804U Thermal insulation device for growth of crystal |
| 04/13/2011 | CN201793803U Temperature control device for photovoltaic polysilicon ingot furnace |
| 04/13/2011 | CN201793375U Reduction furnace for producing polysilicon |
| 04/13/2011 | CN102017080A Method of manufacturing Si(1-v-w-x)CwAlxNv substrate, method of manufacturing epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer |
| 04/13/2011 | CN102017079A Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer |