| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/13/2011 | CN102017069A Silicon monocrystal wafer, method for manufacturing the silicon monocrystal wafer and method for evaluating the silicon monocrystal wafer |
| 04/13/2011 | CN102016136A AlxGa(1-x)As substrate, epitaxial wafer for infrared leds, infrared led, method of manufacturing AlxGa(1-x)as substrate, method of manufacturing epitaxial wafer for infrared leds, and method of manufacturing infrared leds |
| 04/13/2011 | CN102016135A Method of manufacturing Si(1-v-w-x)CwAlxNv substrate, method of manufacturing epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer |
| 04/13/2011 | CN102011195A Preparation method of directional solidification high-Nb TiAl alloy single crystal |
| 04/13/2011 | CN102011194A Photovoltaic semiconductor nanocrystalline and preparation method and application thereof |
| 04/13/2011 | CN102011193A Protein modified GaN nanowire array as well as preparation method and application thereof |
| 04/13/2011 | CN102011192A GaN nanowire array carrying functional groups and making method and application thereof |
| 04/13/2011 | CN102011191A Gan single crystal substrate and method of manufacturing thereof and gan-based semiconductor device and method of manufacturing thereof |
| 04/13/2011 | CN102011190A Method for preparing nanostructure barium strontium titanate ferroelectric film by utilizing nanocrystalline self assembly process |
| 04/13/2011 | CN102011189A Tellurium-caesium molybdate crystal, growth of tellurium-caesium molybdate crystal by flux method and application |
| 04/13/2011 | CN102011188A Method for growing RFeO3 photomagnetic function crystal by secondary melting method |
| 04/13/2011 | CN102011187A Bismuth silicate-germanate mixed crystal and preparation method thereof |
| 04/13/2011 | CN102011186A Middle seed crystal method for growing high-quality (beta-BaB2O4) BBO crystals |
| 04/13/2011 | CN102011185A Method for artificially synthesizing sapphire |
| 04/13/2011 | CN102011184A Production method of alpha-aluminum oxide single crystal |
| 04/13/2011 | CN102011183A Polycrystalline monolithic magnesium aluminate spinels |
| 04/13/2011 | CN102011181A Thermal field device for growing 8-inch silicon single crystals for solar energy by Czochralski method |
| 04/13/2011 | CN102011178A Production method capable of reducing internal air holes of monocrystalline silicon |
| 04/13/2011 | CN102011177A Re-feeding device for Czochralski silicon single crystal furnace |
| 04/13/2011 | CN102011176A Silicon single crystal growth furnace with gas cold traps |
| 04/13/2011 | CN102011175A Flow guide cylinder used for czochralski silicon single crystal growth finance |
| 04/13/2011 | CN102011174A Air-cooled sleeve for straight pull type silicon single crystal growing furnace |
| 04/13/2011 | CN102011173A Equipment for growing sapphire single crystal |
| 04/13/2011 | CN102011103A Chemisorption method for preparing carbon nitride film |
| 04/13/2011 | CN102009186A Low-cost tree-like Co-Pt core shell structure bimetallic material and preparation method thereof |
| 04/13/2011 | CN102009185A Preparation method of silver nanobelts |
| 04/13/2011 | CN101580965B Rapid-annealing method for growing large-size sapphire single-crystal with SAPMAC method |
| 04/13/2011 | CN101580963B SAPMAC method for preparing sapphire single-crystal with size above 300mm |
| 04/13/2011 | CN101451270B Method for large scale preparation of noble metal nano wire |
| 04/13/2011 | CN101323976B Production method of non-inoculating crystal sonic surface wave quartz crystal |
| 04/12/2011 | USRE42279 Method of preparing a compound semiconductor crystal |
| 04/12/2011 | US7923072 Silver crystals through Tollen's reaction |
| 04/12/2011 | US7922815 System and method for epitaxial deposition of a crystal using a liquid-solvent fluidized-bed mechanism |
| 04/07/2011 | WO2011040566A1 Cdte semiconductor substrate for epitaxial growth and substrate container |
| 04/07/2011 | WO2011040240A1 Sic single crystal and method for producing same |
| 04/07/2011 | WO2011040232A1 Inorganic optical filter, optical element, and light source |
| 04/07/2011 | WO2011040108A1 Iii nitride semiconductor substrate, epitaxial substrate, and semiconductor device |
| 04/07/2011 | WO2011040106A1 Method for preserving a gallium nitride substrate, preserved gallium nitride substrate, semiconductor device, and manufacturing method therefor |
| 04/07/2011 | US20110079790 Group iii nitride semiconductor element and epitaxial wafer |
| 04/07/2011 | DE112009001297T5 ALXGA(1-X)AS-Substrat, Epitaxialwafer für Infrarot-LED, Infrarot-LED, Verfahren zur Herstellung eines ALXGA(1-X) AS-Substrats, Verfahren zur Herstellung eines Epitaxialwafers für eine Infrarot-LED und Verfahren zur Herstellung einer Infrarot-LED Al x Ga (1-x) As substrate, epitaxial wafer for infrared LED, infrared LED, methods for the preparation of a Al x Ga (1-x) As substrate, process for producing an epitaxial wafer for an infrared LED and methods of manufacturing an infra -LED |
| 04/07/2011 | DE102009043003A1 Herstellung von Seltenerd-Aluminium- oder -Gallium-Granat-Kristallen aus einer fluoridhaltigen Schmelze sowie ihre Verwendung als optisches Element für die Mirolithographie sowie als Szintillator Production of rare earth-aluminum or gallium-garnet crystals from a fluoride-containing melt as well as its use as an optical element for the Miro lithography and as a scintillator |
| 04/07/2011 | DE102009043002A1 Method for growing a single crystal, comprises producing a melt from a mixture containing aluminum-garnet and/or gallium-garnet and/or a rare earth element and/or a mixture of metal oxides |
| 04/07/2011 | DE102005039116B4 Verfahren zur Erzeugung eines Siliziumwafers A method for producing a silicon wafer |
| 04/06/2011 | EP2305860A2 Gallium nitride substrate |
| 04/06/2011 | EP2305859A1 III-V Nitride substrate boule and method of making and using the same |
| 04/06/2011 | EP2304365A1 Thermal insulation system having variable thermal insulating capacity and the use thereof, and apparatus and method for producing monocrystalline or multicrystalline or vitreous materials |
| 04/06/2011 | EP2304083A1 Solid state material |
| 04/06/2011 | EP1485956B1 Process of producing multicrystalline silicon substrate and solar cell |
| 04/06/2011 | CN201785548U Chain type diffusion equipment |
| 04/06/2011 | CN201785545U Vacuum silicon material feeding device for single crystal furnace |
| 04/06/2011 | CN201785199U Circuit of polycrystalline silicon hydrogen reduction furnace |
| 04/06/2011 | CN201785198U 30-pair-rod polysilicon reduction furnace |
| 04/06/2011 | CN102007234A Single crystal growth method and single crystal pulling apparatus |
| 04/06/2011 | CN102002757A Method for controlling bismuth-sulfide polycrystalline thermoelectric material texture |
| 04/06/2011 | CN102002756A Method of preparing calcium sulfate whisker by using agglomerate fume desulfurized by-products |
| 04/06/2011 | CN102002755A Crystalline silicon ingot furnace thermal field structure with two-stage thermal insulation cage |
| 04/06/2011 | CN102002754A Method for growing bismuth silicate (BSO) scintillation crystal by shaping and lifting |
| 04/06/2011 | CN102002753A Processing method of phi 8-inch <110> czochralski silicon and thermal system thereof |
| 04/06/2011 | CN102002752A Process method for growing bismuth boronate crystals |
| 04/06/2011 | CN102002751A Method for directly synthesizing basic magnesium sulfate whiskers by brine |
| 04/06/2011 | CN101570887B High-frequency coil structure capable of drawing 19 silicon cores or other crystal materials |
| 04/06/2011 | CN101451269B Method for preparing centimeter grade mono-layer or double layers ordered single crystal graphite layer |
| 04/06/2011 | CN101423220B Method for purifying and ingot casting multi-temperature zones silicon material and apparatus thereof |
| 04/06/2011 | CN101343778B Process for producing golden nano stick with short length-diameter ratio |
| 04/06/2011 | CN101319399B Preparation method of silicon carbide nanometer line accompanied with string structure |
| 04/06/2011 | CN101048539B Single crystal wire and manufacturing method of the same |
| 04/05/2011 | US7919831 Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| 04/05/2011 | US7919012 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same |
| 04/05/2011 | US7918936 System and method for crystal growing |
| 04/05/2011 | US7918935 Transition metal oxide nanowires |
| 03/31/2011 | WO2011037473A1 Method for producing high purity silicon |
| 03/31/2011 | WO2011037251A1 Method for production of laminate |
| 03/31/2011 | WO2011036563A2 Structure of the n-rna complex of the non-segmented negative-strand rna viruses of the paramyxoviridae family |
| 03/31/2011 | WO2011016828A3 Large area deposition of graphene hetero-epitaxial growth, and products including the same |
| 03/31/2011 | WO2011009062A3 Coated crucibles and methods for preparing and use thereof |
| 03/31/2011 | US20110073184 Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby |
| 03/31/2011 | US20110073034 Apparatus and process for crystal growth |
| 03/31/2011 | DE102009055667A1 Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide |
| 03/31/2011 | DE102009042349A1 Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente Semi-polar wurtzite-type group III nitride based semiconductor layers that form the basis semiconductor devices |
| 03/31/2011 | CA2744802A1 Method for producing high purity silicon |
| 03/30/2011 | EP2302113A1 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device |
| 03/30/2011 | EP2302112A1 Algan bulk crystal manufacturing method and algan substrate manufacturing method |
| 03/30/2011 | EP2302111A1 Process for producing group iii nitride crystal and group iii nitride crystal |
| 03/30/2011 | EP2302110A1 Method of manufacturing a si(1-v-w-x)cwalxnv substrate, method of manufacturing an epitaxial wafer, si(1-v-w-x)cwalxnv substrate, and epitaxial wafer |
| 03/30/2011 | EP2302109A1 Crystal growing apparatus and crystal growing method |
| 03/30/2011 | EP2302108A1 Nanostructures and methods for manufacturing the same |
| 03/30/2011 | EP2302107A1 Scintillator single crystals produced by solid state crystal growth from ceramic powder |
| 03/30/2011 | EP2300643A1 Diamond material |
| 03/30/2011 | EP2300366A2 Pulsed electrical field assisted or spark plasma sintered polycrystalline ultra hard material and thermally stable ultra hard material cutting elements and compacts and methods of forming the same |
| 03/30/2011 | EP1848844B1 Method and control unit for controlling crystal growing process by electromagnetic pumping |
| 03/30/2011 | EP1784529B1 Manufacture of cadmium mercury telluride on patterned silicon |
| 03/30/2011 | CN201778147U Sapphire growth device and quick seed-crystal replacement device thereof |
| 03/30/2011 | CN201778142U Directional solidification furnace with improved gas circuit |
| 03/30/2011 | CN201776030U Metal powder sintered cartridge filter for polycrystalline silicon production |
| 03/30/2011 | CN101999013A Method for producing photovoltaic-grade crystalline silicon by addition of doping impurities and photovoltaic cell |
| 03/30/2011 | CN101994156A Preparation method of magnetic element-doped CdS nanorods |
| 03/30/2011 | CN101994155A Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof |
| 03/30/2011 | CN101994154A Preparation method of waist drum shaped single crystal anatase titanium dioxide and gathered microsphere thereof |
| 03/30/2011 | CN101994153A Method for preparing modified calcium sulfate whisker by using desulfurization gypsum |
| 03/30/2011 | CN101994152A Process for manufacturing solar crystalline silicon P-type master alloy |