| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/27/2011 | CN101148779B Preparation method for potassium titanate crystal whisker |
| 07/26/2011 | US7985868 Hybrid metal organic scintillator materials system and particle detector |
| 07/26/2011 | US7985446 Preparation of nanoparticle materials |
| 07/26/2011 | US7985294 Optical device and method of manufacturing the same |
| 07/26/2011 | CA2687129C Nanocrystalline alloys of the fe3al(ru) type and use thereof optionally in nanocrystalline form for making electrodes for sodium chlorate synthesis |
| 07/26/2011 | CA2652493C Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
| 07/26/2011 | CA2468789C Shaped nanocrystal particles and methods for making the same |
| 07/21/2011 | WO2011087074A1 Apparatus for producing silicon carbide single crystal |
| 07/21/2011 | WO2011087061A1 Single-crystal substrate, group iii element nitride crystal obtained using same, and process for produicng group iii element nitride crystal |
| 07/21/2011 | WO2011086734A1 Process for production of silicon carbide substrate |
| 07/21/2011 | WO2011086314A1 Use of nanostructures made of highly coordinated silicon nanotubes as electric conductor elements |
| 07/21/2011 | WO2011086164A1 Cvd single crystal diamond material |
| 07/21/2011 | WO2011085905A1 Nanoparticles having reduced ligand spheres |
| 07/21/2011 | WO2011027992A3 Method and apparatus for growing a sapphire single crystal |
| 07/21/2011 | US20110176657 Single crystal scintillator material, method for producing same, radiation detector and pet system |
| 07/21/2011 | DE102010005100A1 Verfahren zur Herstellung von Halbleiterscheiben aus Silizium mit einem Durchmesser von mindestens 450 mm und Halbleiterscheibe aus Silizium mit einem Durchmesser von 450 mm A process for the production of semiconductor wafers of silicon having a diameter of at least 450 mm and the semiconductor wafer of silicon having a diameter of 450 mm |
| 07/21/2011 | DE102005044697B4 Verfahren zur Herstellung von CAF2-Einkristalle mit erhöhter Laserstabilität, CAF2-Einkristalle mit erhöhter Laserstabilität und ihre Verwendung A process for the production of CaF2 single crystals with high laser resistance, CaF2 single crystals with high laser resistance, and their use |
| 07/20/2011 | EP2346066A1 METHOD FOR STRIPPING GaN FROM SAPPHIRE SUBSTRATE WITHOUT DAMAGE BY USING SOLID-STATE LASER |
| 07/20/2011 | EP2345753A1 Silicon wafer and production method therefor |
| 07/20/2011 | EP2345752A1 Silicon wafer and method for producing the same |
| 07/20/2011 | EP2344427A1 Zirconium oxide powder |
| 07/20/2011 | EP2344419A1 Method for manufacturing a zirconium derivative, hydrate, or oxide |
| 07/20/2011 | CN201901725U Draft tube for growing silicon single crystal |
| 07/20/2011 | CN1734247B III-V group nitride system semiconductor substrate, method of making the same and III-V group nitride system semiconductor |
| 07/20/2011 | CN102131964A Apparatus for producing nitride semiconductor crystal, method for producing nitride semiconductor crystal, and nitride semiconductor crystal |
| 07/20/2011 | CN102131957A UV absorption based monitor and control of chloride gas stream |
| 07/20/2011 | CN102131575A Polycrystalline diamond abrasive compact |
| 07/20/2011 | CN102130223A Method for coarsening surface of GaN-based LED epitaxial wafer |
| 07/20/2011 | CN102130208A Method for manufacturing photoelectric detection unit or focal plane device by using molecular beam epitaxy method |
| 07/20/2011 | CN102130068A Alloy-type bonding wire with composite plating on surface |
| 07/20/2011 | CN102129970A Method for manufacturing semiconductor device |
| 07/20/2011 | CN102127816A Method for preparing Ni3A1-based rhenium-contained moncrystal alloy with liquid metal cooling method |
| 07/20/2011 | CN102127815A Manufacturing method of group IIIA nitride semiconductor crystal and manufacturing method of group IIIA nitride semiconductor substrate |
| 07/20/2011 | CN102127814A Ytterbium and holmium codoped lithium niobate crystals and preparation method thereof |
| 07/20/2011 | CN102127813A High-efficiency mid-infrared laser crystal Pr, Er:YSGG and preparation method thereof |
| 07/20/2011 | CN102127812A High-efficiency radiation-resistant intermediate infrared laser crystal Re, Er: GSGG and preparation method thereof |
| 07/20/2011 | CN102127811A Lead fluoroborate nonlinear optical crystal as well as preparation method and application thereof |
| 07/20/2011 | CN102127810A Basic bismuth nitrate nonlinear crystal material and preparation method and application thereof |
| 07/20/2011 | CN102127809A Polycrystalline silicon ingot furnace |
| 07/20/2011 | CN102127808A Independent metal source system of semiconductor growth equipment |
| 07/20/2011 | CN102127807A Method for preparing ternary-component AlxGaI-xN nanocone |
| 07/20/2011 | CN102127803A Growth method of rectangular specially-shaped sapphire crystal |
| 07/20/2011 | CN102127802A Method for growing zinc oxide monocrystalline under hydrothermal condition by utilizing mineralizer |
| 07/20/2011 | CN102127755A Direct current glow plasma device and preparation method of diamond chip |
| 07/20/2011 | CN102127437A Doped group IIA rare earth oxide luminescent material and melt-process growing method thereof |
| 07/20/2011 | CN101671842B Method for growing Na-N co-doping p-type ZnO crystal film by annealing |
| 07/20/2011 | CN101570889B Heat-insulation device using sublimation method to prepare aluminum nitride crystal |
| 07/20/2011 | CN101570888B Method capable of removing carbon-containing impurities for preparing solar-grade silicon crystals |
| 07/20/2011 | CN101550595B Method for preparing pure rutile-phase titanium dioxide single crystalline nanorod without template under low temperature |
| 07/20/2011 | CN101550594B Method for preparing phosphorite crystal whisker using natural phosphorite as raw material |
| 07/20/2011 | CN101519802B Crystal growth furnace body structure with emergency decompression arrangement |
| 07/20/2011 | CN101515629B Piezoelectric thin film, piezoelectric element, and inkjet recording head |
| 07/20/2011 | CN101469448B Method for growth of large size high quality zinc oxide single crystal thick film on sapphire |
| 07/20/2011 | CN101407938B Method for preparing crystal form-controllable yttrium fluoride natrium nanocrystalline under normal temperature |
| 07/20/2011 | CN101392407B Method for preparing cylinder hollow macroporous ordered colloidal crystal |
| 07/20/2011 | CN101235538B Electric arc atomization auxiliary preparation method for four-needle type zinc oxide crystal whisker |
| 07/20/2011 | CN101225545B Method for preparing near-stoichiometric lithium tantalate crystals |
| 07/20/2011 | CN101224400B Preparing method of green diamond |
| 07/20/2011 | CN101220517B Molecular sieve micro-pool device for forcing to deposit photon crystal and method of manufacturing the same |
| 07/19/2011 | US7982208 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices |
| 07/19/2011 | US7981721 Diamond transistor and method of manufacture thereof |
| 07/14/2011 | WO2011084887A1 Chemical compositions for wet chemical modification of sapphire surfaces |
| 07/14/2011 | WO2011083898A1 Insulation device of single crystal growth device and single crystal growth device including the same |
| 07/14/2011 | WO2011083552A1 Epitaxial wafer and semiconductor element |
| 07/14/2011 | WO2011083529A1 Single crystal manufacturing apparatus |
| 07/14/2011 | US20110170174 Doped low-temperature phase barium metaborate single crystal, the manufacturing method thereof and wave changing elements therefrom |
| 07/14/2011 | US20110168968 Fluidic nanotubes and devices |
| 07/13/2011 | EP2343403A1 Electrochemical method for manufacturing one or more of silicon nanopowder, silicon nanowire and silicon nanotube |
| 07/13/2011 | EP2343139A1 Apparatus and method for continuous casting of monocrystalline silicon ribbon |
| 07/13/2011 | EP1618227B1 Method and device for depositing semiconductor layers using two process gases, of which one is preconditioned |
| 07/13/2011 | CN1988113B Process for selective masking of iii-n layers and for the preparation of free-standing iii-n layers or of devices, and products obtained thereby |
| 07/13/2011 | CN1928167B Big-size potassium fluorine boron beryllium crystal, its growing in hydro-thermal method and frequency-converter |
| 07/13/2011 | CN102124150A Controlling transport of gas borne contaminants across a ribbon surface |
| 07/13/2011 | CN102121130A ZnO nano slice/nano wire composite structure with photocatalysis characteristic and preparation method thereof |
| 07/13/2011 | CN102121129A Iron-Based superconducting crystal and preparation method thereof |
| 07/13/2011 | CN102121128A Separable and recyclable composite functional nanomaterial formed by using sawtooth nanostructure as carrier |
| 07/13/2011 | CN101979719B Method for producing gas phase heavy phosphorus-doped float zone silicon single crystal |
| 07/13/2011 | CN101974779B Method for preparing (110) float zone silicon crystal |
| 07/13/2011 | CN101318107B Preparation method for pure silicon beta molecular sieve film |
| 07/13/2011 | CN101255597B Crystal growth method performing physical gas-phase transmission by using curved seed crystal |
| 07/13/2011 | CN101210346B Horizontal zone melting method for growing tellurium zinc cadmium single-crystal |
| 07/12/2011 | US7977673 Semiconductor layer with a Ga2O3 system |
| 07/12/2011 | US7976609 Method for manufacturing metal nanorods and use thereof |
| 07/12/2011 | CA2604148C Improved sucralose composition and process for the crystallization thereof |
| 07/12/2011 | CA2440666C Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
| 07/07/2011 | WO2011081210A1 Tantalum carbide-coated carbon material and manufacturing method for same |
| 07/07/2011 | WO2011081082A1 Method for manufacturing a polycrystalline silicon block material, method for manufacturing a polycrystalline silicon wafer, and polycrystalline silicon block material |
| 07/07/2011 | WO2011079485A1 Production method and production apparatus for element silicon |
| 07/07/2011 | WO2011029976A3 Superconducting strips formed from metalorganic solutions that contain two transition metals |
| 07/06/2011 | CN201890951U Guide cylinder for straight pull silicon single crystal growing furnace |
| 07/06/2011 | CN201890950U Air-cooling jacket for straight pull type silicon single crystal growing furnace |
| 07/06/2011 | CN102119243A Growth of planar non-polar {1-1 0 0} m-plane and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) |
| 07/06/2011 | CN102115914A Mn50CoxNiySnz high-temperature ferromagnetic shape memory alloy material and preparation methods thereof |
| 07/06/2011 | CN102115913A Preparation method of titanium dioxide nanotube film |
| 07/06/2011 | CN102115912A Method and device for preparing Mg-doped ZnO nanowire array |
| 07/06/2011 | CN102115911A Crucibleless growth method of sapphire crystals in different atmospheres |
| 07/06/2011 | CN102115878A Preparation method of single crystal cubic carbon nitride thin film |
| 07/06/2011 | CN101537484B Method for improving temperature distribution in process of single crystal casting solidification |
| 07/06/2011 | CN101381888B Method for producing silicon single crystal |
| 07/06/2011 | CN101106082B Method for the simultaneous double-side grinding of a plurality of semiconductor wafers, and semiconductor wafer having outstanding flatness |