| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/05/2011 | US7972711 Large area, uniformly low dislocation density GaN substrate and process for making the same |
| 07/05/2011 | US7972439 Method of growing single crystals from melt |
| 07/05/2011 | US7972438 High-index UV optical materials for immersion lithography |
| 07/05/2011 | US7972437 Hollow nanocrystals and method of making |
| 07/05/2011 | CA2648378C Process for depositing polycrystalline silicon |
| 06/30/2011 | WO2011078243A1 Metal fluoride crystal, vacuum ultraviolet light emitting element, and vacuum ultraviolet light emitting scintillator |
| 06/30/2011 | WO2011077797A1 Silicon carbide substrate |
| 06/30/2011 | WO2011077541A1 Template for epitaxial growth and process for producing same |
| 06/30/2011 | WO2011076921A1 Method for coating a substrate with aluminum-doped zinc oxide |
| 06/30/2011 | WO2011076643A1 Synthetic cvd diamond |
| 06/30/2011 | WO2011076642A1 Single crystal diamond material |
| 06/30/2011 | DE112009000787T5 AlxGa(1-x)As-Substrat, Epitaxialwafer für Infrarot-LEDs, Infrarot-LED, Verfahren zur Herstellung eines AlxGa(1-x)As-Substrats, Verfahren zur Herstellung eines Epitaxialwafers für Infrarot-LEDs und Verfahren zur Herstellung von Infrarot-LEDs Al x Ga (1-x) As substrate, epitaxial wafer for infrared LEDs, infrared LEDs, process for preparing a Al x Ga (1-x) As substrate, process for producing an epitaxial wafer for infrared LEDs and method for the production of infrared LEDs |
| 06/30/2011 | CA2785385A1 Metal fluoride crystal, vacuum ultraviolet light emitting element, and vacuum ultraviolet light emitting scintillator |
| 06/30/2011 | CA2782183A1 Single crystal diamond material |
| 06/30/2011 | CA2782159A1 Synthetic cvd diamond |
| 06/30/2011 | CA2776403A1 Silicon carbide substrate |
| 06/29/2011 | EP2339053A2 Manufacturing apparatus and manufacturing method of silicon carbide single crystal |
| 06/29/2011 | EP2339052A1 Silicon wafer and manufacturing method thereof |
| 06/29/2011 | EP2337881A1 System and method for liquid silicon containment |
| 06/29/2011 | EP1801268B1 Magnetic field application method of pulling silicon single crystal |
| 06/29/2011 | CN201883180U Silicon single crystal growth thermal field device with low power consumption |
| 06/29/2011 | CN201883177U Crucible with BN (boron nitride)-silicon carbide composite structure for growth of compound semiconductor single crystal |
| 06/29/2011 | CN201883176U Crucible for growth of compound semiconductor single crystal |
| 06/29/2011 | CN102113140A Method for manufacturing iii nitride semiconductor light emitting element, iii nitride semiconductor light emitting element and lamp |
| 06/29/2011 | CN102112666A Compound semiconductor substrate, semiconductor device, and process for producing semiconductor device |
| 06/29/2011 | CN102112665A Generating a pumping force in a silicon melt by applying a time-varying magnetic field |
| 06/29/2011 | CN102108555A High-temperature perfect oxidation resistance type nickel-based single-crystal alloy and preparation method thereof |
| 06/29/2011 | CN102108554A Method for preparing high-performance p-type bismuth telluride-based thermoelectric materials |
| 06/29/2011 | CN102108553A Laser crystal, growth device and method thereof and laser working element prepared from crystal |
| 06/29/2011 | CN102108552A Method for preparing NiCo2O4 nanocrystal film and application of the film in preparing semiconductor optoelectronic devices |
| 06/29/2011 | CN102108551A Rare-earth niobate- and tantalite-doped Re'xRE1-xNbyTa1-yO4 luminous material and melt method crystal growth method thereof |
| 06/29/2011 | CN102108550A Method for preventing severe volatilization during growth process of cesium triborate |
| 06/29/2011 | CN102108549A Silicon wafer and method for producing the same |
| 06/29/2011 | CN102108548A Square electromagnetic cold crucible for continuous melting and organizational control of polycrystalline silicon |
| 06/29/2011 | CN102108547A Multi-substrate large-size hydride vapor phase epitaxy method and device |
| 06/29/2011 | CN102108544A Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| 06/29/2011 | CN102108541A Raw material corrosion equipment system applied to gallium arsenide single crystal growth by vertical gradient freeze method or vertical bridgman method |
| 06/29/2011 | CN102108540A Method for synthesizing mono-dispersed multicomponent compound nanocrystals |
| 06/29/2011 | CN102108496A Film deposition apparatus and film deposition method |
| 06/29/2011 | CN101636849B Iii-nitride light emitting devices grown on templates to reduce strain |
| 06/29/2011 | CN101570884B High-frequency coil capable of drawing 16 silicon cores or other crystal materials simultaneously |
| 06/29/2011 | CN101570883B High-frequency coil structure capable of drawing 19 silicon cores or other crystal materials simultaneously |
| 06/29/2011 | CN101565855B Method for preparing silicon nanocrystal superlattice structure based on co-evaporation method |
| 06/29/2011 | CN101545133B Method for growing rare-earth ferrite magneto-optical crystal |
| 06/29/2011 | CN101532175B Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method |
| 06/29/2011 | CN101498031B Crystal preparation and crystal prepared thereby |
| 06/29/2011 | CN101319361B 单晶金刚石 Single crystal diamond |
| 06/29/2011 | CN101311367B Tungsten oxide nano-material and method for preparing same |
| 06/28/2011 | US7968216 Internal gear pump |
| 06/28/2011 | US7968074 Method for making low-stress large-volume crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| 06/28/2011 | US7967910 Fine structure body, process for producing the same, and Raman spectroscopic method and apparatus |
| 06/28/2011 | CA2634878C Process for producing scorodite and recycling the post-scorodite-synthesis solution |
| 06/23/2011 | WO2011074599A1 Method for producing mosaic diamond |
| 06/23/2011 | WO2011074588A1 Method for calculating temperature distribution in crucible |
| 06/23/2011 | WO2011074568A1 Silica glass crucible and method for manufacturing same |
| 06/23/2011 | WO2011074534A1 Substrate, template substrate, semiconductor light emitting element, semiconductor light emitting element producing method, illumination device using semiconductor light emitting element, and electronic device |
| 06/23/2011 | WO2011074533A1 Single crystal pulling apparatus and single crystal pulling method |
| 06/23/2011 | WO2011074453A1 SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME |
| 06/23/2011 | WO2011074361A1 Group iii nitride crystal substrate, group iii nitride crystal substrate having epitaxial layer, and semiconductor device and method for producing the same |
| 06/23/2011 | WO2011074176A1 Process for production of silicon epitaxial wafer |
| 06/23/2011 | WO2011072675A1 Production method and production device for producing a crystal body from a semiconductor material |
| 06/23/2011 | WO2011036563A9 Structure of the n-rna complex of the non-segmented negative-strand rna viruses of the paramyxoviridae family |
| 06/23/2011 | WO2010033575A3 Abrasive particles having a unique morphology |
| 06/23/2011 | US20110150745 Single crystal diamond material |
| 06/22/2011 | EP2337062A2 Method for making semiconductor structures with structural homogeneity |
| 06/22/2011 | EP2336409A2 Method of preparing a coated nanocrystal |
| 06/22/2011 | EP2336400A2 CdTe single crystal and CdTe polycrystal, and method for producing the same |
| 06/22/2011 | EP2336399A2 Method of producing high quality silicon carbide single crystal in a seeded growth system. |
| 06/22/2011 | EP2336398A1 Single crystal scintillator material, method for producing same, radiation detector and pet system |
| 06/22/2011 | EP2336397A2 Non-polar (Al,B,In,Ga)N-based device with a reduced dislocation density and method for its manufacture |
| 06/22/2011 | EP2334848A1 Method for making side growth semiconductor nanowires and transistors obtained by said method |
| 06/22/2011 | EP2334847A1 Directional solidification furnace for reducing melt contamination and reducing wafer contamination |
| 06/22/2011 | EP2334839A2 Method for the controlled growth of a graphene film |
| 06/22/2011 | EP1895029B1 Apparatus for producing semiconductor single crystal |
| 06/22/2011 | EP1754808B1 Solid solution material of rare earth element fluoride (polycrystal and single crystal), and radiation detector and test device |
| 06/22/2011 | EP1690284B1 Method of production of silicon carbide single crystal |
| 06/22/2011 | EP1449817B1 Production of oriented material or composite material through centrifugal burning |
| 06/22/2011 | DE112009000239T5 Silizium-Einkristall-Züchtungsvorrichtung und Quarztiegel Silicon single crystal growth apparatus and the quartz crucible |
| 06/22/2011 | CN201873777U Silicon fluid level control device |
| 06/22/2011 | CN201873774U Horizontal synthetic furnace for synthesizing gallium arsenide (GaAs) semiconductor |
| 06/22/2011 | CN1904147B Method and apparatus for growing high quality silicon single crystal, silicon single crystal and silicon wafer |
| 06/22/2011 | CN1840748B Diamond substrate and manufacturing method thereof |
| 06/22/2011 | CN102104078A Method for preparing one-dimensional nanometer material with ZnO/ZnS core-shell structure and single crystal ZnS nanotube |
| 06/22/2011 | CN102104060A Semiconductor structure and forming method thereof |
| 06/22/2011 | CN102102225A Method for reducing cracking degree of rare earth-doped halide single crystal |
| 06/22/2011 | CN102102224A Silver-copper-selenium ternary compound dendrite film material and preparation method thereof |
| 06/22/2011 | CN102102223A Group IIIA nitride semiconductor substrate and manufacturing method of the same |
| 06/22/2011 | CN102102222A Method for preparing three-dimensional titanate nano film on surface of titanium |
| 06/22/2011 | CN102102221A High-activity silver bromide sphaerocrystal and preparation method thereof |
| 06/22/2011 | CN102102219A Cooling device capable of increasing growth rate of single crystal furnace |
| 06/22/2011 | CN101514479B Large size hydrate potassium borate nonlinear optical crystal, preparation and use thereof |
| 06/22/2011 | CN101498040B K3B6O10 Br nonlinear optical crystal, preparation and use |
| 06/22/2011 | CN101476161B Method for synthesizing acicular ZnSe semiconductor nanocrystalline |
| 06/22/2011 | CN101363134B Preparation method of lanthanum molybdate base porous membrane material |
| 06/22/2011 | CN101338452B High-density carbon nanotube array and method for preparing same |
| 06/22/2011 | CN101319369B Method of preparing type p ZnO nano-wire |
| 06/22/2011 | CN101318656B Metallurgy purification method for polysilicon |
| 06/21/2011 | US7964483 Growth method for nitride semiconductor epitaxial layers |
| 06/21/2011 | US7964477 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device |
| 06/21/2011 | US7964456 Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method |