| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/06/1998 | US5705449 Mixing and sintering a silicon nitride mixture for a tough high strength bodies |
| 01/06/1998 | US5705423 Epitaxial wafer |
| 01/06/1998 | US5705271 Good adhesion and wear resistance, tools |
| 01/06/1998 | US5704985 Device and a method for epitaxially growing objects by CVD |
| 01/06/1998 | US5704974 Growth of silicon crystal from melt having extraordinary eddy flows on its surface |
| 01/06/1998 | US5704973 Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal |
| 12/30/1997 | US5702822 Method for producing single crystal, and needle-like single crystal |
| 12/30/1997 | US5702586 Polishing diamond surface |
| 12/29/1997 | EP0814176A2 Method and apparatus for depositing diamond film |
| 12/29/1997 | EP0706425A4 Selective plasma deposition |
| 12/24/1997 | WO1997048828A1 Nickel-base superalloy |
| 12/24/1997 | WO1997048827A1 Nickel-base superalloy |
| 12/23/1997 | US5701578 Providing sintered substrate that includes hard grains bonded by metallic binder, annealing to reduce stress, resintering, adherently depositing coating |
| 12/23/1997 | US5700321 Method of feeding a dopant in a continuously charging method |
| 12/18/1997 | DE19624056A1 Nickel-Basis-Superlegierung Nickel-base superalloy |
| 12/18/1997 | DE19624055A1 Nickel-Basis-Superlegierung Nickel-base superalloy |
| 12/17/1997 | EP0813232A2 Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate |
| 12/17/1997 | EP0812932A2 Production of diamond film |
| 12/11/1997 | WO1997046742A1 Method and apparatus for making directional solidification castings |
| 12/10/1997 | EP0812013A2 Multilayer coating for microelectronic devices |
| 12/10/1997 | EP0811851A2 Faraday rotator having a rectangular shaped hysteresis |
| 12/10/1997 | EP0811708A2 Single crystal of nitride and process for preparing it |
| 12/10/1997 | EP0811707A1 Process and apparatus for making single crystals |
| 12/10/1997 | EP0811703A2 Apparatus for treatment of a substrate |
| 12/10/1997 | EP0811702A2 Method and apparatus for depositing a layer by CVD |
| 12/10/1997 | EP0811085A1 St-cut and at-cut oriented seed bodies for quartz crystal synthesis and method for making the same |
| 12/10/1997 | EP0811084A1 Process of diamond growth from c 70? |
| 12/10/1997 | CN1167511A Epitaxial growth of silicon carbide and resulting silicon carbide structure |
| 12/09/1997 | US5696035 Etchant, etching method, and method of fabricating semiconductor device |
| 12/09/1997 | US5695627 Subjecting substrate to electrodeposition in aqueous solution containing copper sulfate, indium sulfate, selenium dioxide, and thiourea |
| 12/07/1997 | CA2206232A1 Method and apparatus for depositing diamond film |
| 12/04/1997 | DE19721784A1 Czochralski-type single crystal pulling apparatus |
| 12/04/1997 | DE19621912A1 Thin structure production by electromagnetic ribbon technique |
| 12/03/1997 | EP0810674A2 Light emitting device, wafer for light emitting device, and method of preparing the same |
| 12/03/1997 | EP0810307A2 Method of forming a compound semiconductor film |
| 12/03/1997 | EP0810305A1 An apparatus for pulling silicon single crystal |
| 12/03/1997 | CN1166864A Method of forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cathodes |
| 12/03/1997 | CN1166540A Method and apparatus for producing silicon carbide by chemical vapour-deposition |
| 12/02/1997 | US5693146 Optical apparatus for forming a nondiffusing thin film by laser evaporation in oxygen atmosphere |
| 11/27/1997 | WO1997044712A1 Photosensitive solutions and use thereof in making thin films |
| 11/27/1997 | DE19717380A1 Two=part holder for melting crucible mounting |
| 11/27/1997 | DE19642540A1 Semiconductor device e.g. MOSFET or diode device |
| 11/26/1997 | CN1036535C Method for growth of single-crystal of salt mercuric rhodanate |
| 11/25/1997 | US5691837 Garnet |
| 11/25/1997 | US5690794 High pressure, laser |
| 11/25/1997 | US5690733 Method for recharging of silicon granules in a Czochralski single crystal growing operation |
| 11/20/1997 | DE19629456C1 Tool, in particular, for cutting materials |
| 11/19/1997 | EP0807839A1 Optical window and method of manufacturing the same |
| 11/19/1997 | EP0807191A1 Method and device for protecting the susceptor during epitaxial growth by cvd |
| 11/19/1997 | CN1165380A Ferroelectric element and method of producing the same |
| 11/19/1997 | CN1165209A Order arranged carbon Nanometre tube and its preparing method and special device |
| 11/18/1997 | US5688980 Organometallic lead precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor |
| 11/18/1997 | US5688480 Roastinf a mixture of metal elements to form oxides in hydrogen halide and halogen |
| 11/18/1997 | US5688321 Apparatus for producing a silicon single crystal by a float-zone method |
| 11/18/1997 | US5688320 Reducing aluminum oxide in nitrogen atmosphere |
| 11/12/1997 | EP0806499A1 Method and apparatus for fabricating semiconductor |
| 11/12/1997 | CN1164759A Process for vapor phase epitaxy of compound semiconductor |
| 11/12/1997 | CN1164582A Method for preparation of nitride nanometre whisker by using carbon nanometre tube |
| 11/12/1997 | CN1164461A Method of manufacturing resonator pieces |
| 11/11/1997 | US5686738 Highly insulating monocrystalline gallium nitride thin films |
| 11/11/1997 | US5686350 Oxidation of algaas to al2o3 |
| 11/06/1997 | DE19718401A1 Removing metal impurities from silicon metalloid surface |
| 11/06/1997 | DE19710672A1 Quartz glass crucible for silicon single crystal production |
| 11/05/1997 | EP0804638A1 Polishing diamond surface |
| 11/04/1997 | US5683949 Conversion of doped polycrystalline material to single crystal material |
| 11/04/1997 | US5683506 Method of manufacturing a bismuth-substituted rare earth iron garnet single crystal film for short wavelength |
| 11/04/1997 | US5683504 Growth of silicon single crystal |
| 11/04/1997 | CA2127916C Layered structure comprising insulator thin film and oxide superconductor thin film |
| 10/30/1997 | DE19712796A1 Epitaxial silicon carbide wafer with conductivity correction |
| 10/30/1997 | CA2803760A1 Cathode materials comprising rhombohedral nasicon for secondary (rechargeable) lithium batteries |
| 10/29/1997 | EP0803593A1 Method of preparing group III-V compound semiconductor crystal |
| 10/29/1997 | EP0803590A2 Sliding parts and process for producing same |
| 10/29/1997 | EP0802991A1 Method for harvesting single crystals from a peritectic melt |
| 10/29/1997 | EP0802988A1 Method of forming diamond-like carbon film (dlc), dlc film formed thereby, use of the same, field emitter array and field emitter cathodes |
| 10/28/1997 | US5681758 Method for fabricating semiconductor single crystal |
| 10/22/1997 | EP0802265A1 Method of making a diamond-coated composite body |
| 10/22/1997 | CA2203214A1 Sliding parts and process for producing same |
| 10/21/1997 | US5679625 Method of making an oxide superconducting thin film |
| 10/21/1997 | US5679446 First layer having first thickness and low intrinsic stress, second layer having second thickness and high intrinsic stress |
| 10/21/1997 | US5679404 Providing cooling block having surface that is cooled by heat exchange, spacing bottom of substrate from cooling block by gap, providing gas in gap, depositing substance on substrate surface, heat flowing to cooling block |
| 10/21/1997 | US5679164 Molybdenum cylinder used to guide source gas; barrel within and spaced from cylinder; axially extending separation plate; flange |
| 10/21/1997 | US5679159 Spinning substrate holder for cutting tool inserts for improved arc-jet diamond deposition |
| 10/21/1997 | US5679153 Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 10/16/1997 | DE19649409A1 Diamond film fine processing method |
| 10/16/1997 | DE19622402C1 Substrate induction heating apparatus especially for CVD |
| 10/15/1997 | EP0801156A2 Process for vapor phase epitaxy of compound semiconductor |
| 10/15/1997 | EP0801155A1 Process and apparatus for forming single crystal silicon carbide (SiC) on a seed |
| 10/15/1997 | EP0800592A1 Method of producing boron-doped monocrystalline silicon carbide |
| 10/15/1997 | CN1162028A Single crystal drawing device |
| 10/15/1997 | CN1162027A Single crystal drawing device |
| 10/14/1997 | US5677235 Supplying disilane process gas to targets in heated, depressurized reaction vessel |
| 10/14/1997 | US5676751 Czochralski method wherein single crystal silicon rod is pulled from silicon melt in crucible in chamber comprising cooling chamber with flow of gas having specified thermoconductivity |
| 10/09/1997 | WO1997037064A1 Method and apparatus for growing oriented whisker arrays |
| 10/07/1997 | US5674793 Method for producing a high-strength, high-toughness silicon nitride sinter |
| 10/07/1997 | US5674620 Passivated cobalt matrix holding tungsten carbide to improve adhesion by preventing reaction between cobalt and diamond |
| 10/07/1997 | US5674563 Method for ferroelectric thin film production |
| 10/02/1997 | WO1997036025A1 Process for producing silicon single crystal |
| 10/01/1997 | EP0798404A2 Apparatus for manufacturing single crystal of silicon |
| 10/01/1997 | EP0798403A1 Continuously charged czochralski method of manufacturing silicon monocrystal, and dopant feeding apparatus |
| 10/01/1997 | EP0797688A1 Method for deposition of diamondlike carbon films |