Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
12/2010
12/22/2010EP2262934A1 Method and apparatus for growth of high purity 6h-sic single crystal
12/22/2010EP2262920A1 Method for growing monocrystalline diamonds
12/22/2010EP1846321B1 Method of fabricating a silicon-on-insulator structure
12/22/2010CN101925979A Method for manufacturing III nitride semiconductor, method for manufacturing III nitride semiconductor light emitting element, III nitride semiconductor light emitting element, and lamp
12/22/2010CN101925695A Iii-group nitride single-crystal ingot, iii-group nitride single-crystal substrate, method for manufacturing iii-group nitride single-crystal ingot, and method for manufacturing iii-group nitride single-crystal substrate
12/22/2010CN101924023A Vapor phase epitaxy apparatus of group III nitride semiconductor
12/22/2010CN101922045A GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture
12/22/2010CN101922042A Epitaxial wafer tray and support and rotation connecting device matched with same
12/22/2010CN101310043B Ald reactor
12/21/2010US7854974 Tube formed of bonded silicon staves
12/16/2010US20100317136 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer
12/16/2010DE102009025971A1 Verfahren zum Einrichten eines Epitaxie-Reaktors A method for establishing an epitaxial reactor
12/15/2010EP2261989A2 High voltage switching devices and process for forming same
12/15/2010EP2261988A2 High voltage switching devices and process for forming same
12/15/2010EP2261401A1 Nitride semiconductor crystal and manufacturing method thereof
12/15/2010EP1668173B1 Method and facility for the production of a layer-like part
12/15/2010EP1041610B1 GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
12/15/2010CN101918625A Method for growing gallium nitride crystal and method for producing gallium nitride substrate
12/15/2010CN101918624A Process for producing laminate comprising Al-based group III nitride single crystal layer, laminate produced by the process, process for producing Al-based group III nitride single crystal substrate using the laminate, and aluminum nitride single cry
12/15/2010CN101311339B Process for discriminating high growth rate chemical vapour deposition diamond single crystal
12/15/2010CN101148780B Method for preparing twist silicon nitride ceramics crystal whisker
12/09/2010WO2010140564A1 Nitride semiconductor crystal and method for manufacturing same
12/09/2010US20100308437 Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitrided-based compound semiconductor device
12/08/2010EP2259295A1 Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
12/08/2010EP2257658A1 Method of making nucleation layer for diamond growth
12/08/2010EP1569269B1 Epitaxial growing method and use of substrate for epitaxial growth
12/08/2010EP1493848B1 Seed crystal of silicon carbide single crystal and method for producing ingot using same
12/08/2010CN101910477A Method for growing group III nitride crystal
12/08/2010CN101910475A Epitaxial barrel susceptor having improved thickness uniformity
12/08/2010CN101509144B Method for improving nonpolar a face GaN film quality on lithium aluminate substrate
12/08/2010CN101488468B Wafer retaining system and semiconductor processing apparatus applying the system
12/08/2010CN101328609B Method for preparing tin doping zinc oxide nanowire by vapor deposition
12/08/2010CN101228013B Method and composition for adhering materials together
12/08/2010CN101163815B Source, an arrangement for installing a source, and a method for installing and removing a source
12/08/2010CN101091893B Vacuum tube furnace for preparing nano material
12/07/2010US7847293 Growth of reduced dislocation density non-polar gallium nitride
12/07/2010US7847218 System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
12/07/2010US7846840 Method for forming tungsten materials during vapor deposition processes
12/07/2010US7846819 Method of synthesizing nanoscale filamentary structures, and electronic components comprising such structures
12/07/2010US7846499 vaporizing a precursor from a source material container maintained at a vaporising temperature, repeatedly feeding pulses of the vaporized precursor via a feed line into the reaction chamber at a first pressure, purging reaction chamber with pulses of inactive gas fed via the feed line at a 2nd pressure
12/07/2010CA2486664C Vapor-phase growth apparatus and vapor-phase growth method
12/05/2010CA2705653A1 Humidity sensor and method of manufacturing the same
12/02/2010US20100301351 High voltage switching devices and process for forming same
12/02/2010DE102004060624B4 Halbleiterscheibe mit epitaktisch abgeschiedener Schicht und Verfahren zur Herstellung der Halbleiterscheibe Semiconductor wafer having epitaxially deposited layer and method for manufacturing the semiconductor wafer
12/01/2010EP2256786A1 Process for producing monocrystal thin film and monocrystal thin film device
12/01/2010EP2255029A2 Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device
12/01/2010EP1687841B1 Formation of lattice-tuning semiconductor substrates
12/01/2010CN101899706A Method for preparing nonpolar GaN-based dilute magnetic semiconductor material by adopting MOCVD
12/01/2010CN101333680B Method and apparatus for quickly maintaining epitaxy end gas processor
11/2010
11/30/2010US7842134 Diamond based substrate for electronic devices
11/25/2010WO2010133386A1 Holding cone for silicon growth rods
11/25/2010US20100295056 Iii-nitride materials including low dislocation densities and methods associated with the same
11/25/2010US20100294196 Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate
11/25/2010DE4345602B4 Verfahren zum Zünden und Betreiben einer Niederspannungs-Bogenentladung, Vakuumbehandlungsanlage und Kathodenkammer hierfür sowie Verwendung des Verfahrens Method for starting and operating a low-voltage arc discharge, vacuum treatment plant and cathode chamber for this and using the method
11/25/2010DE102009022224A1 Verfahren zur Herstellung von epitaxierten Siliciumscheiben Process for producing epitaxially coated silicon wafers
11/24/2010EP2253745A2 Coloured Diamond
11/24/2010EP2253733A1 High colour diamond
11/24/2010EP1466041B1 Coloured diamond
11/24/2010CN101892521A Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate
11/23/2010US7838398 Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer
11/23/2010US7837795 Low temperature load and bake
11/18/2010US20100291769 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
11/18/2010US20100291408 Nanostructures including a metal
11/18/2010US20100289122 Iii-v nitride substrate boule and method of making and using the same
11/18/2010US20100288191 Method of growing gallium nitride crystal and method of manufacturing gallium nitride substrate
11/18/2010US20100288190 Growth Method of Non-Polarized-Plane InN
11/17/2010EP2251464A2 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
11/17/2010EP1841902B1 METHOD FOR THE PRODUCTION OF C-PLANE ORIENTED GaN SUBSTRATES OR AlxGa1-xN SUBSTRATES
11/17/2010EP1721031B1 Reduction of carrot defects in silicon carbide epitaxy
11/17/2010EP1532288B1 Hybrid beam deposition system and method for fabricating zno films
11/17/2010EP1411154B1 Oxide high-critical temperature superconductor acicular crystal and its production method
11/17/2010EP1405333B1 Wafer boat and method of making a slip free wafer boat
11/17/2010EP1371087B1 A device for epitaxially growing objects by cvd
11/17/2010CN101887935A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/17/2010CN101024895B Epitaxial wafer and method for production of epitaxial wafer
11/16/2010US7833352 Apparatus for fabrication of thin films
11/16/2010US7833348 Temperature control method of epitaxial growth apparatus
11/11/2010US20100285663 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
11/11/2010US20100282170 Vapor phase growth susceptor and vapor phase growth apparatus
11/10/2010EP2248931A2 Free-standing and parting method for forming same
11/10/2010CN101883881A Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitride-based compound semiconductor device
11/10/2010CN101333679B Method and apparatus for shortening maintenance time of epitaxy end gas processor
11/09/2010US7830027 Level realignment following an epitaxy step
11/09/2010US7829913 Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method
11/09/2010US7829442 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
11/04/2010WO2010124640A1 Epitaxial wafer and manufacturering method thereof
11/04/2010US20100276663 Gan semiconductor optical element, method for manufacturing gan semiconductor optical element, epitaxial wafer and method for growing gan semiconductor film
11/04/2010US20100275837 Opto-electronic and electronic devices using an n-face or m-plane gallium nitride substrate prepared via ammonothermal growth
11/03/2010EP2246462A1 Iii-group nitride single-crystal ingot, iii-group nitride single-crystal substrate, method for manufacturing iii-group nitride single-crystal ingot, and method for manufacturing iii-group nitride single-crystal substrate
11/03/2010CN101163818B Reactor
11/02/2010US7825417 Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers
11/02/2010US7824955 Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices
11/02/2010US7824493 Silicon wafer and method for manufacturing the same
11/02/2010US7824492 Method of growing oxide thin films
10/2010
10/28/2010WO2010122933A1 Method for manufacturing iii nitride crystal substrate
10/28/2010US20100273320 Device and method for selectively depositing crystalline layers using mocvd or hvpe
10/28/2010US20100272141 Nitride semiconductor freestanding substrate and manufacturing method of the same, and laser diode
10/28/2010US20100269887 Crystallographically textured metal substrate, crystallographically textured device, cell and photovoltaic module including such device and thin layer deposition method
10/27/2010EP2243869A2 Method for fabricating semiconductor device
10/27/2010EP2243868A1 Laminate and process for producing the laminate
1 ... 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 ... 134