Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
03/2007
03/07/2007CN1303430C Sensor for detecting magnetic field direction
03/06/2007US7187525 Magnetoresistive device and method for manufacturing same
03/06/2007US7187167 Magnetic sensor
03/06/2007US7187166 Electrical property evaluation apparatus
03/06/2007US7186571 Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device
03/01/2007US20070045759 Passive elements in MRAM embedded integrated circuits
03/01/2007US20070045758 Bottom conductor for integrated MRAM
02/2007
02/28/2007EP1756868A1 Tunnel junction barrier layer comprising a diluted semiconductor with spin sensitivity
02/28/2007EP1756855A1 Manganese doped magnetic semiconductors
02/28/2007CN1921168A Ferroalloy nitride nanometer giant-magnetic resistant thin film material and its preparing method
02/28/2007CN1921167A Magnetoresistive effect element, magnetic head, magnetic storage device and magnetic memory device
02/28/2007CN1302548C Magnetic memory device and method of manufacturing the same
02/28/2007CN1302482C Magnetic film memory device with redundant repair function
02/27/2007US7184247 Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same
02/27/2007US7183893 TMR sensor with oxidized alloy barrier layer and method for forming the same
02/27/2007US7183621 MRAM memory cell having an electroplated bottom layer
02/27/2007US7183120 Etch-stop material for improved manufacture of magnetic devices
02/22/2007WO2007020823A1 Magnetic memory cell, magnetic random access memory and method for reading/writing data in magnetic random access memory
02/22/2007US20070041125 Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same
02/22/2007US20070041124 Narrow track CPP head with bias cancellation
02/22/2007US20070039166 Process to manufacture narrow track CPP head with bias cancellation
02/22/2007DE102005039280A1 Universeller Sensorchip Universal sensor chip
02/21/2007EP1754979A1 Magnetic digital signal coupler
02/21/2007EP1754533A2 The combinatorial synthesis of novel materials
02/20/2007US7180716 Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head
02/20/2007US7180713 Magnetoresistive element
02/20/2007US7180146 Miniature magnetic field sensor
02/20/2007US7179416 Heat treatment apparatus
02/20/2007US7178222 Method of manufacturing a tunneling magnetoresistive element
02/20/2007US7178221 Method of forming a thin film magnetic head
02/15/2007WO2006124252A3 Integrated magnetic flux concentrator
02/14/2007EP1266412B1 Method and device for transferring spin-polarized charge carriers
02/14/2007EP1108257B1 An mram cell requiring low switching field
02/14/2007CN1913190A Magnetoresistive sensor having an anistropic pinned layer for pinning improvement
02/13/2007US7177121 Magnetoresistive sensor with random crystal orientation underlayer and magnetic domain control film center aligned with free layer
02/13/2007US7176679 Sensor structure and magnetic field sensor
02/08/2007WO2007015358A1 Magnetic random access memory and operation method thereof
02/08/2007WO2007015355A1 Mram
02/08/2007WO2007015030A1 Variable resistance
02/08/2007US20070030728 High speed low power annular magnetic devices based on current induced spin-momentum transfer
02/08/2007US20070030604 Magnetoresistance effect elements, magnetic heads and magnetic storage apparatus
02/08/2007US20070029630 Integrated circuits with contemporaneously formed array electrodes and logic interconnects
02/07/2007EP1750097A2 Magnetic Sensor
02/07/2007CN1909068A Magnetic head, fabrication process of magnetic head, and magnetic disk storage apparatus mounting magnetic head
02/07/2007CN1298887C Precursor solution for controling MOCVD deposited PCMO component and method
02/06/2007US7173846 Magnetic RAM and array architecture using a two transistor, one MTJ cell
02/06/2007US7173791 Ferroelectric device including a unit element having a topological outline in a C-shape or a S-shape
02/06/2007US7173320 High performance lateral bipolar transistor
02/06/2007US7173300 Magnetoresistive element, method for making the same, and magnetic memory device incorporating the same
02/01/2007WO2007013295A1 Magnetoresistive element and magnetic random access memory
02/01/2007US20070026681 Dry etching process and method for manufacturing magnetic memory device
01/2007
01/31/2007CN1906701A Stress assisted current driven switching for magnetic memory applications
01/31/2007CN1906466A Magnetic sensor and its manufacturing method
01/31/2007CN1905229A Magnetoresistive device and nonvolatile magnetic memory equipped with the same
01/30/2007US7170778 High speed low power magnetic devices based on current induced spin-momentum transfer
01/30/2007US7170724 Magnetic sensor and manufacturing method therefor
01/30/2007US7170287 Thin film magnetic sensor and method of manufacturing the same
01/30/2007US7170173 Magnetically lined conductors
01/30/2007US7170123 Antiferromagnetically stabilized pseudo spin valve for memory applications
01/25/2007WO2007010904A1 Switch device
01/25/2007US20070019462 Magnetic memory cell, magnetic memory device, and magnetic memory device manufacturing method
01/24/2007CN1296895C Magnetic recording/reproducing apparatus
01/23/2007US7167347 Magnetoresistance effect element and magnetic head with nano-contact portion not more than a fermi length placed between dual layers
01/23/2007US7167345 Magnetoresistive effect sensor including a magnet array of a plurality of permanent magnets
01/23/2007US7166996 Position sensor utilizing a linear hall-effect sensor
01/23/2007US7166479 Methods of forming magnetic shielding for a thin-film memory element
01/23/2007US7166470 Dissolving two or more reagents in solvent, mixing together in different ratios, dispensing on subtrate, heating for calcining
01/23/2007US7166261 Method of patterning products using chemical reaction
01/23/2007US7166173 Method of simultaneously initializing two antiferromagnetic layers in a magnetic sensor
01/18/2007US20070015294 Novel structure/method to fabricate a high-performance magnetic tunneling junction MRAM
01/18/2007US20070014172 Memory device capable of performing high speed reading while realizing redundancy replacement
01/18/2007US20070013016 Method and structure for generating offset fields for use in mram devices
01/18/2007US20070013015 Magnetoresistive effect element and magnetic memory
01/18/2007US20070012952 Segmented magnetic shielding elements
01/17/2007EP1743387A2 Semiconductor device using location and sign of the spin of electrons
01/17/2007EP1743386A2 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
01/17/2007EP1743383A2 Magnetoresistive memory soi cell
01/17/2007EP1012617B1 Magnetic multilayer sensor
01/17/2007CN1295789C Memory cell and memory device
01/17/2007CN1295712C Compounds having giant magnetoresistance and spin-polarized tunnels, the production thereof and their use
01/17/2007CN1295708C Film magnet memory with high precision data reading structure
01/17/2007CN1295518C Magnetic sensor
01/16/2007US7165197 Apparatus and method of analyzing a magnetic random access memory
01/16/2007US7164181 Spin injection devices
01/16/2007US7164180 Magnetoresistive random-access memory device
01/16/2007US7163755 Magneto-resistive element
01/16/2007US7162791 Method of manufacturing integrated spin valve head
01/11/2007WO2007004444A1 Semiconductor memory
01/11/2007US20070008661 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
01/11/2007US20070007610 Magneto-resistive effect element and magnetic memory
01/11/2007US20070007609 Magnetoresistive effect element and magnetic memory
01/11/2007US20070007608 Tilted array geometry for improved MRAM switching
01/11/2007US20070007569 Semiconductor memory device comprising magneto resistive element and its manufacturing method
01/11/2007US20070007536 Thin film magnetic memory device capable of conducting stable data read and write operations
01/11/2007DE10220983B4 Sensor für schwach magnetische Felder unter Verwendung der Herstellungstechnik für gedruckte Leiterplatten und Verfahren zum Herstellen eines solchen Sensors Sensor for weak magnetic fields using the manufacturing technology for printed circuit boards and methods for manufacturing of such a sensor
01/11/2007DE10220982B4 Sensor für schwach magnetische Felder unter Verwendung der Herstellungstechnik für gedruckte Leiterplatten und Verfahren zum Herstellen eines solchen Sensors Sensor for weak magnetic fields using the manufacturing technology for printed circuit boards and methods for manufacturing of such a sensor
01/10/2007EP1559107B1 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology
01/10/2007CN1894801A Synthetic antiferromagnet structures for use in mtjs in mram technology
01/09/2007US7161875 Thermal-assisted magnetic memory storage device
01/09/2007US7161219 MRAM devices with fine tuned offset
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