Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
04/2007
04/24/2007US7209327 Magnetoresistive head having magnetic domain control film in contact with underlayer and with ends of free layer
04/24/2007US7208947 Fluxgate sensor integrated in a semiconductor substrate and method for manufacturing the same
04/24/2007US7208808 Magnetic random access memory with lower switching field
04/24/2007US7208807 Structure and method to fabricate high performance MTJ devices for MRAM applications
04/24/2007US7208323 Method for forming magneto-resistive memory cells with shape anisotropy
04/19/2007WO2007042649A1 Method for making a magneto-impedance sensor
04/19/2007WO2007042563A1 A magnetoresistive tunnel junction magnetic device and its application to mram
04/18/2007EP1390978B1 Semiconductor memory device and method for the production thereof
04/18/2007CN1311569C Magnetic sensor and producing method thereof
04/18/2007CN1311472C Magnetoresistive memory and method for reading out from the same
04/18/2007CN1311241C Magnetic field sensor
04/18/2007CN1311096C Manganese alloy sputtering target and method for producing the same
04/17/2007US7206222 Thin-film magnetic memory device executing data writing with data write magnetic fields in two directions
04/17/2007US7206220 MRAM-cell and array-architecture with maximum read-out signal and reduced electromagnetic interference
04/17/2007US7206175 Magnetoresistive head having defined relationships between the tract width and magnetization film thickness product to permit no hysteresis in the transfer curve
04/17/2007US7206174 Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same
04/17/2007US7206173 Magnetoresistive-effect element having a prominent magnetoresistive effect, and method of manufacturing same
04/17/2007US7205590 Semiconductor memory device provided with magneto-resistive element and method for fabricating the same
04/17/2007US7205564 Resistance change memory having organic semiconductor layer
04/17/2007US7205163 Curvature anisotropy in magnetic bits for a magnetic random access memory
04/12/2007WO2007040189A1 Magnetic random access memory, and its actuation method
04/12/2007WO2007040167A1 Magnetic random access memory
04/12/2007WO2007040058A1 Hall element device and hall element circuit using same
04/12/2007US20070082413 Semiconductor memory device with a capacitor formed therein and a method for forming the same
04/12/2007US20070081276 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
04/12/2007US20070079498 Method of manufacturing a spin-valve giant magnetoresistive head
04/12/2007DE102006024722A1 Magnetfelddetektor sowie Verfahren zu seiner Herstellung Magnetic field detector, as well as method for its preparation
04/12/2007DE102005047482A1 Magneto restrictive sensor for magnetic signals in such as automobiles is produced as a semiconductor with a metal isolator structure
04/11/2007EP1466329B1 Magnetic device with magnetic tunnel junction, memory array and read/write methods using same
04/11/2007CN1947272A Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
04/11/2007CN1945870A Double mill process for patterning current perpendicular to plane magnetoresistive devices
04/11/2007CN1310212C Magnetic device and magnetic memory
04/10/2007US7203090 High output nonvolatile magnetic memory
04/10/2007US7202771 Magnetic field sensing device
04/10/2007US7202544 Giant magnetoresistance structure
04/05/2007WO2007038657A2 Variable reluctance position sensor
04/04/2007EP1683161A4 Stress assisted current driven switching for magnetic memory applications
04/04/2007CN1941450A Magnetoresistive effect device
04/04/2007CN1941449A Magneto-resistive element, method for manufacturing the same and magnetic random access memory
04/04/2007CN1941448A Self-rotary valve electromagnetic resistor based on hard magnetic material and its production
04/04/2007CN1941082A 磁性编码器 Magnetic encoder
04/04/2007CN1308960C 磁随机存取存储器及其写入方法 Magnetic random access memory and writing method
04/04/2007CN1308959C Magnetic RAM device containing offset conductor
04/04/2007CN1308921C Magnetic head with heat conductive non-magnetic metallic layer in a reader gap and method for manufacturing same
04/03/2007US7200035 Magneto-resistive memory cell structures with improved selectivity
04/03/2007US7199986 Magnetoresistive sensor with decoupled hard bias multilayers
04/03/2007US7199983 Magnetoresistive device utilizing a magnetoresistance effect for reading magnetic information
04/03/2007US7199055 Magnetic memory cell junction and method for forming a magnetic memory cell junction
04/03/2007US7198818 Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors
04/03/2007US7197813 Method of accurate evaluation on magnetoresistive read element
03/2007
03/29/2007US20070069849 Magnetic field detector and manufacturing method thereof
03/29/2007US20070068499 Variable reluctance position sensor
03/28/2007CN2884541Y 磁传感器 Magnetic sensors
03/28/2007CN1938874A Spin transfer magnetic element having low saturation magnetization free layers
03/28/2007CN1307644C Film magnetic memory
03/28/2007CN1307643C Reading method for magnet resistance device with soft reference layer
03/27/2007US7196882 Magnetic tunnel junction device and its method of fabrication
03/27/2007US7196879 Exchange coupling film and magnetoresistive element using the same
03/27/2007US7196877 Magnetoresistive element, magnetoresistive head and magnetic reproducing apparatus
03/27/2007US7196875 Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy
03/27/2007US7196387 Memory cell with an asymmetrical area
03/27/2007US7196386 Memory element and memory device
03/27/2007US7195929 MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same
03/27/2007US7195927 Process for making magnetic memory structures having different-sized memory cell layers
03/27/2007US7195749 For use in magnetic sensing applications and spin electronics
03/22/2007WO2007032379A1 Method and apparatus for manufacturing magnetoresistive device
03/22/2007WO2007032257A1 Magnetic random access memory waveform shaping circuit
03/22/2007WO2007032149A1 High-frequency device using magnetic multi-layer film dot
03/22/2007WO2007030964A1 Spintronics components without non-magnetic interlayers
03/22/2007US20070063298 Magneto-resistance transistor and method thereof
03/22/2007DE102006035661A1 Magnetfelderfassungsvorrichtung und Verfahren zu deren Einstellung Magnetic field detecting device and methods of setting
03/21/2007EP1547101B1 Amorphous alloys for magnetic devices
03/21/2007CN2881967Y Film low dissipation strong magnet reluctance sensing device
03/21/2007CN1306475C Thin film magnetic head, head gimbal assembly, and hard disk device
03/20/2007US7193891 Spin based sensor device
03/20/2007US7193823 Magnetoresistive device exhibiting small and stable bias fields independent of device size variation
03/20/2007US7193822 Thin film magnetic head, head gimbal assembly, and hard disk drive
03/20/2007US7193821 Thin film magnetic head and method for manufacturing the same
03/20/2007US7193411 Angle sensor having low waveform distortion
03/20/2007US7193288 Magnetoelectric transducer and its manufacturing method
03/20/2007US7193287 Magnetic memory device, a method for manufacturing a magnetic memory device, and an integrated circuit device including such magnetic memory device
03/20/2007US7193286 Radial field generating selection conductor device
03/20/2007US7193285 Tilted array geometry for improved MRAM switching
03/20/2007US7193284 Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof
03/20/2007US7192792 Method of changing an electrically programmable resistance cross point memory bit
03/15/2007WO2007029754A1 Alumina film substrate and its fabrication method
03/15/2007US20070058302 Tunnel junction element
03/14/2007EP1763094A2 Structure and fabrication of an MRAM cell
03/14/2007CN1305140C Magnetic RAM and its data reading method
03/13/2007US7190613 Magnetic random access memory device having thermal agitation property and high write efficiency
03/13/2007US7190611 Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
03/13/2007US7190558 Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
03/13/2007US7190156 Device for measuring a B-component of a magnetic field, a magnetic field sensor and an ammeter
03/13/2007US7190049 Coupling the self-assembly of copolymers, in thin films with subsequent chemical modification to remove one component of the copolymer; magnetic storage media, magnetoresistance devices
03/13/2007US7189583 Method for production of MRAM elements
03/13/2007US7189435 Three dimensional multilayer nanostructure
03/07/2007EP1332498B1 An analog functional module using magnetoresistive memory technology
03/07/2007CN1924603A Magnetic field detection apparatus and method of adjusting the same
03/07/2007CN1303665C Dual-trench isolated crosspoint memory array and method for fabricating same
03/07/2007CN1303611C Thin film magnetic memory device suppressing internal magnetic noises
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