| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 11/28/2001 | EP1157428A1 Thin multi-well active layer led with controlled o doping |
| 11/28/2001 | EP1157420A1 Light extractor apparatus |
| 11/28/2001 | CN1324498A Method and apparatus for performing wavelength-cnversion using phosphors with light emitting diodes |
| 11/28/2001 | CN1324494A Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| 11/28/2001 | CN1324116A Light emitting diode and its manufacture and blank chip |
| 11/27/2001 | US6324201 Light emitting semiconductor element capable of suppressing change of driving current |
| 11/27/2001 | US6323063 Forming LED having angled sides for increased side light extraction |
| 11/27/2001 | US6323059 Method of fabricating a semiconductor device |
| 11/27/2001 | US6323052 Compound semiconductor light emitting device and method of fabricating the same |
| 11/27/2001 | US6322901 Highly luminescent color-selective nano-crystalline materials |
| 11/27/2001 | CA2222845C An inexpensive single-fiber bidirectional data link |
| 11/26/2001 | CA2341092A1 Photographic image acquisition device using led chips |
| 11/26/2001 | CA2340474A1 Photographic image capturing device with light emitting diodes |
| 11/22/2001 | WO2001089046A1 Light emitting semi-conductor component |
| 11/22/2001 | WO2001089001A2 White light emitting phosphor blends for led devices |
| 11/22/2001 | WO2001089000A1 A white light emitting phosphor blend for led devices |
| 11/22/2001 | WO2001088993A2 A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES |
| 11/22/2001 | WO2001088430A1 Image display device |
| 11/22/2001 | WO2001024324A3 High-power laser with transverse mode filter |
| 11/22/2001 | US20010043629 Opto-electronic devices with multiple oxide apertures |
| 11/22/2001 | US20010043627 Light -emitting device |
| 11/22/2001 | US20010042866 Inxalygazn optical emitters fabricated via substrate removal |
| 11/22/2001 | US20010042865 Semiconductor light emitting device and its manufacturing method |
| 11/22/2001 | US20010042860 Nitride gallium compound semiconductor light emission device |
| 11/22/2001 | US20010042859 Semiconductor device with quantum-wave interference layers |
| 11/22/2001 | US20010042858 Backside light emitting chip type light emitting element and insulating substrate therefor |
| 11/22/2001 | US20010042853 Oxygen-containing, such as metal oxides, silicates, borates or titanates, small particle size, narrow particle size distribution; displays |
| 11/22/2001 | US20010042503 Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates |
| 11/22/2001 | US20010042502 Method of self-assembly silicon quantum dots |
| 11/22/2001 | DE10122666A1 Light emitting element of rear side light emitting chip type |
| 11/22/2001 | CA2375069A1 A white light emitting phosphor blend for led devices |
| 11/21/2001 | EP1156535A1 Light-emitting chip device with case and method of manufacture thereof |
| 11/21/2001 | EP1156534A1 Gallium phosphide luminescent device |
| 11/21/2001 | EP1156140A1 A method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device |
| 11/21/2001 | EP1155455A1 Hybrid white light source comprising led and phosphor-led |
| 11/21/2001 | EP1155443A1 Heteroepitaxial growth with thermal expansion and lattice mismatch |
| 11/21/2001 | EP1155170A1 Method for producing nitride monocrystals |
| 11/21/2001 | EP1155096A1 Fluorene copolymers and devices made therefrom |
| 11/21/2001 | CN1323446A Low temperature formation of backside ohmic contacts of vertical devices |
| 11/21/2001 | CN1323069A Surface illuminating device |
| 11/21/2001 | CN1075068C Coumarin derivatives, producing process thereof and their use as intermediates |
| 11/20/2001 | US6320686 Component for optical data transmission |
| 11/20/2001 | US6320568 Control system for display panels |
| 11/20/2001 | US6320330 Illuminating electronic device and illumination method |
| 11/20/2001 | US6320208 II-VI compound semiconductor device |
| 11/20/2001 | US6320207 Light emitting device having flat growth GaN layer |
| 11/20/2001 | US6320206 Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
| 11/20/2001 | US6319808 Ohmic contact to semiconductor devices and method of manufacturing the same |
| 11/20/2001 | US6319778 Method of making light emitting diode |
| 11/20/2001 | US6319746 Optical semiconductor device and method for fabricating the same |
| 11/20/2001 | US6319742 Method of forming nitride based semiconductor layer |
| 11/20/2001 | US6319738 Two-dimensionally arrayed quantum device fabrication method |
| 11/20/2001 | US6319427 Fast luminescent silicon |
| 11/20/2001 | US6319426 Nanocrystal core having a selected band gap energy; shell of a semiconductor material having a band gap energy greater than that of the core; outer layer molecule having at least two linking groups and at least one hydrophilic group |
| 11/20/2001 | US6319425 Molded body of preferably silicon rubber, and light diffusion substance; sand blasting one of the surfaces |
| 11/20/2001 | US6318901 Socket and a system for optoelectronic interconnection and a method of fabricating such socket and system |
| 11/20/2001 | US6318886 High flux led assembly |
| 11/19/2001 | CA2348124A1 A method for the heat treatment of a znse crystal substrate, heat treated substrate and light emission device |
| 11/19/2001 | CA2343694A1 A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures |
| 11/15/2001 | WO2001086730A2 Optoelectronic component and method for the production thereof |
| 11/15/2001 | WO2001059821A8 A process for forming a semiconductor structure |
| 11/15/2001 | WO2001059820A8 Semiconductor structure |
| 11/15/2001 | US20010041427 Etching underlying gallium nitride layer on sapphire substrate to selectively expose sapphire substrate and define post and trench in underlying gallium nitride layer, and laterally growing sidewall of post into trench |
| 11/15/2001 | US20010041410 Method for production and formation of semiconductor light emitting diodes |
| 11/15/2001 | US20010041034 Substrate, optical fiber connection end member, optical element housing member, and method of fabrication of an optical module and the substrate |
| 11/15/2001 | US20010041031 Optical head |
| 11/15/2001 | US20010040907 Optical device including carbon-doped contact layers |
| 11/15/2001 | US20010040713 Receiving apparatus, transmitting apparatus, and communication system |
| 11/15/2001 | US20010040644 Bonded layer semiconductor device |
| 11/15/2001 | US20010040620 Optical write head, and method of assembling the same |
| 11/15/2001 | US20010040245 Semiconductor device and its manufacturing method |
| 11/15/2001 | US20010040239 Chip-type semiconductor light-emitting device |
| 11/15/2001 | US20010040236 Semiconductor device and method for manufacturing the same |
| 11/15/2001 | US20010040232 Emit light in visible energy range |
| 11/15/2001 | DE10122705A1 Device with functional component has insulating substrate with recess, wiring layer formed as pattern on substrate surface extending continuously from recess floor to substrate surface |
| 11/15/2001 | DE10108700A1 Optisches Material und optisches Element Optical material and optical element |
| 11/14/2001 | EP1154676A1 Display device |
| 11/14/2001 | EP1154494A2 Porous semiconductor material |
| 11/14/2001 | EP1154493A2 Light-emitting semiconductor device having quantum dots |
| 11/14/2001 | EP1153752A2 Semiconductor device, ink tank provided with such device and method of manufacturing such device |
| 11/14/2001 | EP1153739A1 Aerogel substrate and method for preparing the same |
| 11/14/2001 | EP1153698A1 Article comprising creep-resistant and stress-reducing solder |
| 11/14/2001 | EP1153442A1 Semiconductor component for generating mixed-color electromagnetic radiation |
| 11/14/2001 | EP1153101A1 Light source using a yellow-to-red-emitting phosphor |
| 11/14/2001 | CN2459759Y Led |
| 11/14/2001 | CN1322284A Apparatus for mixing light from different color LEDs |
| 11/14/2001 | CN1322169A Circuit for driving self-scanned luminescent array |
| 11/14/2001 | CN1322018A Semiconductor luminescent device and mfg method thereof |
| 11/14/2001 | CN1322017A Production method of gallium nitride compound semiconductor |
| 11/14/2001 | CN1322006A Growth method of gallium nitride series compound semiconductor with amorphous and polycrystalline structure |
| 11/14/2001 | CN1321965A Pedal mechanism buit up into unit and key musical instrument provided with same |
| 11/14/2001 | CN1321961A Modulating circuit and image display device thereby |
| 11/14/2001 | CN1321897A Platform and optical module, its mfg. method and optical transmission device |
| 11/13/2001 | US6317444 Optical device including carbon-doped contact layers |
| 11/13/2001 | US6317175 Single crystal silicon arrayed devices with optical shield between transistor and substrate |
| 11/13/2001 | US6316792 Compound semiconductor light emitter and a method for manufacturing the same |
| 11/13/2001 | US6316785 Nitride-compound semiconductor device |
| 11/13/2001 | US6315440 Multicolored illuminator and portable information apparatus having the same |
| 11/13/2001 | US6315432 Light-emitting diode (LED) device |
| 11/08/2001 | WO2001084680A1 Passivation of semiconductor laser facets |