Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2014
08/06/2014CN103972305A 用于低压瞬态电压抑制二极管芯片的制造方法 For low-voltage transient voltage suppression diode chip manufacturing method
08/06/2014CN103972304A 双向瞬态电压抑制半导体器件 Bidirectional transient voltage suppression of semiconductor devices
08/06/2014CN103972303A 二极管、esd保护电路及其制造方法 Diodes, esd protection circuit and its manufacturing method
08/06/2014CN103972302A 一种jfet器件及其制造方法 One kind jfet device and manufacturing method thereof
08/06/2014CN103972301A 半导体器件、集成电路和制造集成电路的方法 Semiconductor devices, integrated circuits and methods of manufacturing integrated circuits
08/06/2014CN103972300A 一种薄膜晶体管及其制备方法、阵列基板、显示装置 A thin film transistor and its preparation method, the array substrate, display device
08/06/2014CN103972299A 一种薄膜晶体管及其制作方法、显示基板、显示装置 A thin film transistor and its manufacturing method, display board, a display device
08/06/2014CN103972298A 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof
08/06/2014CN103972297A 半导体元件结构及其制造方法 The semiconductor device structure and manufacturing method
08/06/2014CN103972296A 薄膜晶体管 Thin film transistor
08/06/2014CN103972295A 一种jfet器件及其制造方法 One kind jfet device and manufacturing method thereof
08/06/2014CN103972294A 横向双重扩散式金属氧化物半导体晶体管及其制造方法 Lateral double diffused metal oxide semiconductor transistor and its manufacturing method
08/06/2014CN103972293A 侧墙结构、侧墙结构的制备方法、cmos器件 Preparation sidewall structure, side wall structure, cmos devices
08/06/2014CN103972292A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972291A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972290A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972289A 半导体装置及制造半导体装置的方法 Semiconductor device and method for manufacturing a semiconductor device
08/06/2014CN103972288A 超结沟槽式金属氧化物半导体场效应晶体管及其制备方法 Superjunction trench metal oxide semiconductor field effect transistor and its preparation method
08/06/2014CN103972287A 半导体装置 Semiconductor device
08/06/2014CN103972286A 具有p顶层与n能阶的半导体装置及其制造方法 Having a p top layer of the semiconductor device and manufacturing method thereof capable of order n
08/06/2014CN103972285A 半导体元件及其制作方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972284A 半导体器件 Semiconductor devices
08/06/2014CN103972283A 半导体器件 Semiconductor devices
08/06/2014CN103972282A 反向阻断半导体器件和制造反向阻断半导体器件的方法 Reverse blocking semiconductor device and manufacturing method of a semiconductor device reverse blocking
08/06/2014CN103972281A 包括边缘区域的半导体器件和制造半导体器件的方法 And a method of manufacturing a semiconductor device including a semiconductor device edge region
08/06/2014CN103972280A 一种具有场截止结构的igbt及其制造方法 A method of manufacturing the field stop igbt structure having
08/06/2014CN103972279A 双极型纵向平面式晶体管及其制造方法 Longitudinal bipolar transistor and method for manufacturing a planar-type
08/06/2014CN103972278A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972277A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972276A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972275A 半导体装置及用以制造半导体装置的方法 Semiconductor device and method for manufacturing a semiconductor device
08/06/2014CN103972274A 半导体装置 Semiconductor device
08/06/2014CN103972273A 低反向漏电流的单向瞬态电压抑制芯片 Low reverse leakage current unidirectional transient voltage suppression chip
08/06/2014CN103972272A 高可靠性表面安装器件 High reliability surface mount devices
08/06/2014CN103972246A 布线结构以及具备布线结构的显示装置 The display device includes a wiring structure and a wiring structure
08/06/2014CN103972245A 像素结构与其制造方法 Pixel structure and its manufacturing method
08/06/2014CN103972238A 一种存储器单元结构 A memory cell structure
08/06/2014CN103972237A 非易失性存储器件及其制造方法 Non-volatile memory device and manufacturing method thereof
08/06/2014CN103972236A 包含鳍式场效电晶体装置的集成电路及其制造方法 IC and its manufacturing method includes a fin field effect transistor device
08/06/2014CN103972235A 电子器件及其形成方法 Electronic device and method for forming
08/06/2014CN103972231A 低功耗的双向瞬态电压抑制器件 Low-power devices bidirectional transient voltage suppression
08/06/2014CN103972225A 具有静电放电防护功效的晶体管结构 Transistor structure with electrostatic discharge protection efficacy
08/06/2014CN103972178A 用于加工载体的方法和用于制作电荷储存存储基元的方法 A method for processing vectors and methods for making the charge storage element of the storage group
08/06/2014CN103972110A 薄膜晶体管及其制备方法、阵列基板、显示装置 Thin film transistor and its preparation method, the array substrate, display device
08/06/2014CN103972107A 具有SiGe源漏的FinFET及其形成方法 FinFET with a SiGe source and drain and method of forming
08/06/2014CN103972106A 具有SiGe源漏的MOSFET及其形成方法 SiGe source and drain of the MOSFET has its forming method
08/06/2014CN103972105A 具有SiGe沟道的MOSFET及其形成方法 SiGe channel MOSFET with a method of forming
08/06/2014CN103972104A 具有SiGe沟道的鳍式场效应晶体管及其形成方法 With a SiGe channel FinFET and method of forming
08/06/2014CN103972103A 增加光刻对准的栅极分离方法 Increase in the gate lithography alignment separation method
08/06/2014CN103972101A 用于产生具有垂直电介质层的半导体器件的方法 The method for producing a semiconductor device having a dielectric layer of a vertical
08/06/2014CN103972099A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972091A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972090A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972089A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972087A 半导体器件制造方法 The semiconductor device manufacturing method
08/06/2014CN103972085A 一种形成高压igbt的fs层的方法及igbt器件 A method of high-pressure igbt igbt fs layer and devices
08/06/2014CN103972072A 半导体器件和用于制造半导体器件的方法 A semiconductor device and a method for manufacturing a semiconductor device
08/06/2014CN103972067A 具有取代栅极结构的集成电路及其制造方法 Gate structure having a substituent and a manufacturing method of an integrated circuit
08/06/2014CN103972066A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN103972061A 将掺杂剂注入到iii族氮化物结构中的方法及形成的器件 Iii implanting a dopant into the nitride structure formed in a method and device
08/06/2014CN103972050A 多晶硅薄膜、多晶硅薄膜晶体管及阵列基板的制备方法 Preparation polycrystalline silicon thin film, polycrystalline silicon thin film transistor array substrate and
08/06/2014CN102790097B 功率二极管器件及其制备方法 Power diode device and its preparation method
08/06/2014CN102779858B 一种功率二极管器件及其制备方法 A power diode device and its preparation method
08/06/2014CN102664197B Jfet及其制造方法以及使用该jfet的微型逆变器 Jfet its manufacturing method and the use of the micro-inverter jfet
08/06/2014CN102629627B 异质栅隧穿晶体管的形成方法 Heterojunction tunneling method for forming a gate transistor
08/06/2014CN102543821B 浅沟槽隔离结构的形成方法 The method for forming a shallow trench isolation structure
08/06/2014CN102460660B 半导体装置的制造方法 The method of manufacturing a semiconductor device
08/06/2014CN102428519B 驱动半导体存储装置的方法 The method of driving a semiconductor memory device
08/06/2014CN102403341B 横向绝缘栅双极晶体管 Lateral insulated gate bipolar transistor
08/06/2014CN102347365B 双向开关以及其制造方法 Bidirectional switch and a manufacturing method thereof
08/06/2014CN102347355B 最小化场阑igbt的缓冲区及发射极电荷差异的方法 Igbt minimize field stop buffer and method emitter charge differences
08/06/2014CN102347353B 半导体装置 Semiconductor device
08/06/2014CN102332468B 电流传感器、逆变器电路以及具有其的半导体器件 Current sensors, an inverter circuit and a semiconductor device having its
08/06/2014CN102318045B 改良式击穿电压的边缘端点 Modified breakdown voltage edge endpoints
08/06/2014CN102306651B 棋盘式高电压垂直晶体管布局 Checkerboard high voltage vertical transistor layout
08/06/2014CN102289118B 液晶显示元件 Liquid crystal display element
08/06/2014CN102246283B 双极晶体管 Bipolar Transistors
08/06/2014CN102160183B 半导体装置 Semiconductor device
08/06/2014CN101887704B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN101794820B 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN101728434B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/06/2014CN101510564B 一种基于锆钛酸铅材料的隧道开关 Based on lead zirconate titanate materials tunnel switch
08/06/2014CN101308876B 存储器结构及其操作方法 Memory structure and method of operation
08/06/2014CN101263605B 包括含铟和锌的氧化物半导体材料的沟道的场效应晶体管 Comprising indium-containing zinc oxide semiconductor material and a channel field effect transistor
08/05/2014US8797791 Semiconductor integrated circuit device with reduced leakage current
08/05/2014US8797303 Amorphous oxide semiconductor thin film transistor fabrication method
08/05/2014US8797249 Thin-film transistor (TFT) array structure and liquid crystal display (LCD) panel thereof
08/05/2014US8797239 Organic light-emitting display device
08/05/2014US8796932 Microscale digital vacuum electronic gates
08/05/2014US8796867 Semiconductor package and fabrication method thereof
08/05/2014US8796866 Micro-electromechanical pressure sensor having reduced thermally-induced stress
08/05/2014US8796863 Semiconductor memory devices and semiconductor packages
08/05/2014US8796860 Semiconductor device
08/05/2014US8796859 Multilayer interconnect structure and method for integrated circuits
08/05/2014US8796855 Semiconductor devices with nonconductive vias
08/05/2014US8796827 Semiconductor device including a DC-DC converter
08/05/2014US8796824 Semiconductor structure
08/05/2014US8796823 Semiconductor device having through electrodes, a manufacturing method thereof, and an electronic apparatus
08/05/2014US8796822 Stacked semiconductor devices
08/05/2014US8796820 Semiconductor wafer and semiconductor device wafer
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