Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2014
08/13/2014CN103985750A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/13/2014CN103985749A 半导体设置及其制造方法 Set and method of manufacturing the semiconductor
08/13/2014CN103985748A 半导体设置及其制造方法 Set and method of manufacturing the semiconductor
08/13/2014CN103985747A GaAs/AlGaAs半导体异质结结构体及其制作方法 GaAs / AlGaAs semiconductor heterojunction structure and manufacturing method thereof
08/13/2014CN103985746A 沟槽型igbt器件及其制造方法 Igbt trench type device and its manufacturing method
08/13/2014CN103985745A 抑制输出非线性开启的隧穿场效应晶体管及制备方法 Suppress the output nonlinear tunneling field effect transistor is turned on and the preparation method
08/13/2014CN103985744A 半导体装置 Semiconductor device
08/13/2014CN103985743A 双极型功率晶体管基片及其制作方法 Bipolar power transistor substrate and manufacturing method thereof
08/13/2014CN103985742A 垂直氮化镓晶体管及其制造方法 Vertical transistor and method of manufacturing the gallium nitride
08/13/2014CN103985741A 一种基于ald的石墨烯基热电子晶体管及其制备方法 A graphene-based hot electron transistor and its preparation method based ald
08/13/2014CN103985740A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/13/2014CN103985718A 显示装置 The display device
08/13/2014CN103985713A Tft阵列基板及其制造方法 Tft array substrate and manufacturing method thereof
08/13/2014CN103985712A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/13/2014CN103985711A 具有减少的寄生电容量的FinFET及其制造方法 FinFET and its manufacturing method having a reduced parasitic capacitance
08/13/2014CN103985639A 一种薄膜晶体管及其制备方法、显示基板、显示装置 A thin film transistor and a preparation method thereof, a display substrate, a display device
08/13/2014CN103985638A 一种低温多晶硅薄膜晶体管及其制备方法和显示器件 Low-temperature polysilicon thin film transistor and its preparation method and display devices
08/13/2014CN103985637A 低温多晶硅薄膜晶体管及其制作方法和显示装置 Low-temperature polysilicon thin film transistor and a display device and manufacturing method thereof
08/13/2014CN103985636A 调整多阈值电压的FinFET/三栅极沟道掺杂 Adjust the multi-threshold voltage FinFET / tri-gate channel doping
08/13/2014CN103985608A 一种具有pn结的mems电容开关 Mems having a pn junction capacitance of the switch
08/13/2014CN103081079B 半导体装置及其制造方法 Semiconductor device and manufacturing method
08/13/2014CN103035694B 一种具有终端保护结构的igbt芯片及其制造方法 Igbt and method of manufacturing a chip terminal protection structure has
08/13/2014CN102738220B Ono结构及其制造方法 Ono structure and manufacturing method
08/13/2014CN102666643B 高分子化合物、含有该高分子化合物的薄膜和墨液组合物 The polymer compound, the polymer compound containing the ink composition of the film and
08/13/2014CN102655170B 锗硅异质结双极晶体管工艺中可变电容及制造方法 SiGe heterojunction bipolar transistor process variable capacitor and method of manufacture
08/13/2014CN102610659B 电压控制变容器及其制备方法 Voltage controlled varactors and preparation method
08/13/2014CN102610644B 抑制辐射引起的背栅泄漏电流的soi器件及其制备方法 Suppression device and fabrication method soi back gate radiation-induced leakage current
08/13/2014CN102569373B 一种具有低导通饱和压降的igbt及其制造方法 Igbt its manufacturing method having a low saturation voltage of the conduction
08/13/2014CN102544110B 具有寄生电容补正结构的薄膜晶体管及用该薄膜晶体管的液晶显示器 A liquid crystal display having a thin film transistor and the parasitic capacitance of the structure by correcting the thin film transistor
08/13/2014CN102487087B 应用于三维片上集成系统的薄膜晶体管的制造方法 Chip manufacturing method is applied to the three-dimensional thin-film transistor integrated system
08/13/2014CN102479801B 一种半导体器件及其形成方法 A semiconductor device and method of forming
08/13/2014CN102479752B 薄膜晶体管、有源矩阵背板及其制造方法和显示器 A thin film transistor and method of manufacturing the active matrix backplane and the display
08/13/2014CN102460664B 电子器件用外延衬底及其制造方法 An epitaxial substrate for electronic devices and manufacturing method
08/13/2014CN102456750B 用于提高电容器容量和兼容性的方法和装置 Method and apparatus to improve the capacity of the capacitor, and compatibility for
08/13/2014CN102446966B 一种集成反并联二极管的igbt结构及其制造方法 An integrated anti-parallel diode structure and manufacturing method igbt
08/13/2014CN102437201B SiC结势垒肖特基二极管及其制作方法 SiC junction barrier Schottky diode and manufacturing method thereof
08/13/2014CN102420232B 一种闪存器件及其形成方法 One kind of a flash memory device and method of forming
08/13/2014CN102412279B 锗硅bicmos工艺中垂直寄生型pnp三极管及制造方法 SiGe bicmos process parasitic vertical pnp type transistor and method of manufacture
08/13/2014CN102412278B 锗硅BiCMOS工艺中垂直型PNP三极管及制造方法 SiGe BiCMOS process, vertical PNP transistor and method of manufacture
08/13/2014CN102347358B 半导体器件结构及其制造方法 The semiconductor device structure and manufacturing method
08/13/2014CN102339857B Dmos器件及制造方法 Dmos device and method of manufacture
08/13/2014CN102308390B 半导体异质结构二极管 Semiconductor heterostructure diode
08/13/2014CN102239547B 用于以厚度降低的有源层形成应变晶体管的结构应变基板 Strain used for the substrate to reduce the thickness of the active layer of a transistor forming a strained
08/13/2014CN102147550B 液晶显示装置及其制造方法 The liquid crystal display device and manufacturing method
08/13/2014CN101771048B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
08/13/2014CN101714576B 半导体装置及其制造方法和操作方法 Semiconductor device and manufacturing method and method of operation
08/12/2014US8804416 Memory devices having select gates with p type bodies, memory strings having separate source lines and methods
08/12/2014US8804415 Adaptive voltage range management in non-volatile memory
08/12/2014US8804404 Memory device and manufacturing method the same
08/12/2014US8804295 Configurable multi-gate switch circuitry
08/12/2014US8804059 Pixel structure having metal-insulator-semiconductor capacitor
08/12/2014US8803781 Semiconductor device and display device
08/12/2014US8803773 Display apparatus
08/12/2014US8803339 Bump out for differential signals
08/12/2014US8803337 Integrated circuit structure having dies with connectors
08/12/2014US8803333 Three-dimensional chip stack and method of forming the same
08/12/2014US8803332 Delamination resistance of stacked dies in die saw
08/12/2014US8803330 Integrated circuit package system with mounting structure
08/12/2014US8803327 Semiconductor package
08/12/2014US8803326 Chip package
08/12/2014US8803323 Package structures and methods for forming the same
08/12/2014US8803320 Integrated circuits and fabrication methods thereof
08/12/2014US8803317 Structures for improving current carrying capability of interconnects and methods of fabricating the same
08/12/2014US8803313 Group III nitride based flip-chip integrated circuit and method for fabricating
08/12/2014US8803303 Semiconductor device
08/12/2014US8803294 Semiconductor device and method for manufacturing same
08/12/2014US8803293 Method to reduce magnetic film stress for better yield
08/12/2014US8803292 Through-substrate vias and methods for forming the same
08/12/2014US8803288 Analog transcap device
08/12/2014US8803286 Low cost metal-insulator-metal capacitors
08/12/2014US8803285 Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereof
08/12/2014US8803282 Electronic device including a nonvolatile memory structure having an antifuse component
08/12/2014US8803281 Semiconductor device
08/12/2014US8803280 High-voltage ESD protection device
08/12/2014US8803278 Semiconductor device
08/12/2014US8803277 Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
08/12/2014US8803273 High sensitivity image sensors
08/12/2014US8803269 Wafer scale packaging platform for transceivers
08/12/2014US8803266 Storage nodes, magnetic memory devices, and methods of manufacturing the same
08/12/2014US8803265 Magnetic memory layer and magnetic memory device including the same
08/12/2014US8803264 Room-temperature magnetoelectric multiferroic thin films and applications thereof
08/12/2014US8803263 Magnetic memory element and storage device using the same
08/12/2014US8803261 MEMS process and device
08/12/2014US8803260 Low frequency CMUT with vent holes
08/12/2014US8803257 Capacitive vibration sensor
08/12/2014US8803255 Gate electrode having a capping layer
08/12/2014US8803253 Replacement metal gate process for CMOS integrated circuits
08/12/2014US8803252 Silicon carbide semiconductor device
08/12/2014US8803251 Termination of high voltage (HV) devices with new configurations and methods
08/12/2014US8803250 Metal-oxide-semiconductor field-effect transistor and method for manufacturing the same
08/12/2014US8803249 Profile pre-shaping for replacement poly gate interlayer dielectric
08/12/2014US8803247 Fin-type field effect transistor
08/12/2014US8803242 High mobility enhancement mode FET
08/12/2014US8803240 Electronic device with asymmetric gate strain
08/12/2014US8803239 High temperature operating package and circuit design
08/12/2014US8803238 Plasma-induced damage (PID) protective diode in an open region of a well guard to increase the degree of integration of transustor of semiconductor device
08/12/2014US8803236 Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same
08/12/2014US8803235 Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
08/12/2014US8803234 High voltage semiconductor device and method for fabricating the same
08/12/2014US8803233 Junctionless transistor
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