Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2014
07/22/2014US8785929 Semiconductor device and method for manufacturing the same
07/22/2014US8785928 Semiconductor device
07/22/2014US8785927 Laminate structure including oxide semiconductor thin film layer, and thin film transistor
07/22/2014US8785926 Semiconductor device
07/22/2014US8785925 Thin film device
07/22/2014US8785924 High-sensitivity transparent gas sensor and method for manufacturing the same
07/22/2014US8785923 Semiconductor device
07/22/2014US8785922 Thin film transistor, organic luminescence display including the same, and method of manufacturing the organic luminescence display
07/22/2014US8785921 Device comprising positive hole injection transport layer, method for producing the same and ink for forming positive hole injection transport layer
07/22/2014US8785920 Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element
07/22/2014US8785912 Graphene electronic device including a plurality of graphene channel layers
07/22/2014US8785910 Thin film transistor, display device including the same, and method of manufacturing the display device
07/22/2014US8785909 Non-planar semiconductor device having channel region with low band-gap cladding layer
07/22/2014US8785908 Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
07/22/2014US8785907 Epitaxial film growth on patterned substrate
07/22/2014US8785906 Lamp with controllable spectrum
07/22/2014US8785905 Amber light-emitting diode comprising a group III-nitride nanowire active region
07/22/2014US8785904 Light-emitting device with low forward voltage and method for fabricating the same
07/22/2014US8785903 Memory cell array and variable resistive memory device including the same
07/22/2014US8785902 Resistive memory device and method for fabricating the same
07/22/2014US8785900 Resistive memory and methods of processing resistive memory
07/22/2014US8785315 Reacted conductive gate electrodes and methods of making the same
07/22/2014US8785312 Conductive layers for hafnium silicon oxynitride
07/22/2014US8785309 Spatial orientation of the carbon nanotubes in electrophoretic deposition process
07/22/2014US8785306 Manufacturing methods for accurately aligned and self-balanced superjunction devices
07/22/2014US8785283 Method for forming semiconductor structure having metal connection
07/22/2014US8785276 Methods for fabricating a cell string and a non-volatile memory device including the cell string
07/22/2014US8785275 Non-volatile FINFET memory device and manufacturing method thereof
07/22/2014US8785270 Integrating schottky diode into power MOSFET
07/22/2014US8785265 Semiconductor device and method for manufacturing the same
07/22/2014US8785262 Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition
07/22/2014US8785257 Array substrate for display device
07/22/2014US8785240 Light-emitting apparatus and production method thereof
07/22/2014US8785238 Nonvolatile memory element and method for manufacturing same
07/22/2014US8785231 Method of making semiconductor device
07/22/2014US8785225 Thin-film transistor pixel structure having shielding layer and manufacturing method thereof
07/22/2014US8784699 In-Ga-Zn-type oxide, oxide sintered body, and sputtering target
07/17/2014WO2014110195A1 Light emitting heterostructure with partially relaxed semiconductor layer
07/17/2014WO2014110173A1 High-performance amorphous semiconductors
07/17/2014WO2014110005A1 Strained finfet with an electrically isolated channel
07/17/2014WO2014109830A1 Metal oxynitride based heterojunction field effect transistor
07/17/2014WO2014109827A1 High mobility film through quantum confinement using metal oxynitrides and oxides
07/17/2014WO2014079836A3 Synthetic diamond heat spreaders
07/17/2014WO2014064264A3 Electronic device comprising nanowire(s), provided with a transition metal buffer layer, method for growing at least one nanowire and method for producing a device
07/17/2014WO2014064263A3 Method for growing at least one nanowire from a layer of a transition nitride metal, said layer being obtained in two steps
07/17/2014US20140199845 Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection
07/17/2014US20140199828 Scaled equivalent oxide thickness for field effect transistor devices
07/17/2014US20140199825 Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereof
07/17/2014US20140199818 Method for fabricating an esd protection device
07/17/2014US20140199817 Method for manufacturing multi-gate transistor device
07/17/2014US20140199816 Method of fabricating a super junction transistor
07/17/2014US20140199815 Methods of manufacturing a semiconductor device
07/17/2014US20140199814 Method of manufacture for a semiconductor device
07/17/2014US20140199813 Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation
07/17/2014US20140199809 Semiconductor device and manufacturing method thereof
07/17/2014US20140198577 Semiconductor device
07/17/2014US20140197889 Semiconductor device, method for manufacturing the same, power supply device, and high-frequency amplifier
07/17/2014US20140197876 Semiconductor Device with IGBT Cell and Desaturation Channel Structure
07/17/2014US20140197521 Semiconductor device having two-way conduction characteristics, and electrostatic discharge protection circuit incorporating the same
07/17/2014US20140197516 Integration of 3d stacked ic device with peripheral circuits
07/17/2014US20140197515 High voltage circuit layout structure
07/17/2014US20140197499 Self Aligned Contact Formation
07/17/2014US20140197498 Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts
07/17/2014US20140197497 Native pmos device with low threshold voltage and high drive current and method of fabricating the same
07/17/2014US20140197496 Semiconductor Structure with Suppressed STI Dishing Effect at Resistor Region
07/17/2014US20140197493 Defect reduction for formation of epitaxial layer in source and drain regions
07/17/2014US20140197492 Semiconductor device and fabrication method
07/17/2014US20140197491 Semiconductor device and manufacturing method thereof
07/17/2014US20140197490 Semiconductor device
07/17/2014US20140197489 Power MOSFETs and Methods for Forming the Same
07/17/2014US20140197487 Ldmos power semiconductor device and manufacturing method of the same
07/17/2014US20140197486 Power integrated circuit including series-connected source substrate and drain substrate power mosfets
07/17/2014US20140197485 Semiconductor device and manufacturing method thereof
07/17/2014US20140197484 Dual Work Function Recessed Access Device and Methods of Forming
07/17/2014US20140197483 Trench shielding structure for semiconductor device and method
07/17/2014US20140197482 Semiconductor device and method of forming the same
07/17/2014US20140197481 Vertical type semiconductor devices
07/17/2014US20140197480 Semiconductor structure having common gate and fabrication method thereof
07/17/2014US20140197479 Semiconductor device having dual parallel channel structure and method of fabricating the same
07/17/2014US20140197478 Power transistor device with super junction and manufacturing method thereof
07/17/2014US20140197477 Semiconductor device
07/17/2014US20140197476 Semiconductor device
07/17/2014US20140197475 Power mosfet device with a gate conductor surrounding source and drain pillars
07/17/2014US20140197474 Semiconductor integrated circuit device and a method of manufacturing the same
07/17/2014US20140197473 Nonvolatile semiconductor storage device and method of manufacturing the same
07/17/2014US20140197472 Non-volatile memory structure and manufacturing method thereof
07/17/2014US20140197471 Non-volatile memory devices having reduced susceptibility to leakage of stored charges and methods of forming same
07/17/2014US20140197468 Methods of forming semiconductor device with self-aligned contact elements and the resulting device
07/17/2014US20140197465 Nonvolatile memory devices with aligned trench isolation regions
07/17/2014US20140197463 Metal-programmable integrated circuits
07/17/2014US20140197462 III-Nitride Transistor with High Resistivity Substrate
07/17/2014US20140197461 Semiconductor Structure Including A Spatially Confined Dielectric Region
07/17/2014US20140197460 Semiconductor device, method for manufacturing the same, power supply device, and high-frequency amplifier
07/17/2014US20140197459 Semiconductor device
07/17/2014US20140197458 FinFET Device and Method of Fabricating Same
07/17/2014US20140197457 FinFET Device and Method of Fabricating Same
07/17/2014US20140197456 Semiconductor Device and Fabricating the Same
07/17/2014US20140197455 Semiconductor substructure having elevated strain material-sidewall interface and method of making the same
07/17/2014US20140197452 Electronic device comprising conductive regions and dummy regions
07/17/2014US20140197451 Semiconductor device
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