Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2014
07/23/2014CN103943502A 鳍式场效应晶体管及其形成方法 Fin-type field effect transistor and method of forming
07/23/2014CN103943500A 鳍式场效应晶体管的制作方法 The method of making the FinFET
07/23/2014CN103943498A 三维量子阱晶体管及其形成方法 Dimensional quantum well transistors and method of forming
07/23/2014CN103943493A 一种半导体加工方法以及一种半导体结构 A semiconductor processing method, and a semiconductor structure
07/23/2014CN103943492A 一种半导体器件及其制备方法 A semiconductor device and its preparation method
07/23/2014CN103943484A 自对准的栅极分离方法 Self-aligned to the gate electrode separation
07/23/2014CN103943477A 薄膜晶体管及其制备方法、双面显示器件、单面显示器件 The thin film transistor and a preparation method, double-sided display, single-sided display
07/23/2014CN103943476A 半导体栅堆叠结构及其形成方法 Semiconductor gate stack structure and method of forming
07/23/2014CN103943473A 具有修正轮廓的金属栅极的半导体器件 The semiconductor device having a metal gate contour correction
07/23/2014CN103943471A 外延层形成方法及半导体结构 The method of forming the epitaxial layer and the semiconductor structure
07/23/2014CN103180959B 半导体元件及其制造方法 Semiconductor device and manufacturing method
07/23/2014CN102683193B 晶体管的制作方法、晶体管、阵列基板以及显示装置 The method of making a transistor, the transistor array substrate and a display device
07/23/2014CN102664188B 一种具有复合缓冲层的氮化镓基高电子迁移率晶体管 A GaN-based high electron mobility transistor having a composite buffer layer
07/23/2014CN102655169B 具有过压保护的半导体器件及基于该器件的双向极性器件 Overvoltage protection of semiconductor devices and devices based on the bi-polar devices
07/23/2014CN102629585B 一种显示装置、薄膜晶体管、阵列基板及其制造方法 An apparatus, a thin film transistor array substrate and manufacturing method thereof
07/23/2014CN102487041B 阵列基板及其制造方法和电子纸显示器 Array substrate and manufacturing method and electronic paper displays
07/23/2014CN102473737B 发光显示装置及其制造方法 Light emitting display device and its manufacturing method
07/23/2014CN102446856B 半导体器件及制造半导体器件的方法 Semiconductor device and manufacturing method of a semiconductor device
07/23/2014CN102432631B 含氮官能团取代烷氧基稀土金属镧和钆配合物及其合成方法与应用 Alkoxy substituted nitrogen-containing functional groups of rare earth metals lanthanum and gadolinium complexes and synthetic methods and application
07/23/2014CN102386124B 直接接触的沟槽结构 Direct contact with the trench structure
07/23/2014CN102347349B 半导体结构及其制作方法 Semiconductor structure and fabrication method
07/23/2014CN102005470B 半导体元件用外延基板、半导体元件及半导体元件用外延基板的制作方法 The epitaxial substrate for semiconductor device, a semiconductor element and a method of manufacturing a semiconductor device using the epitaxial substrate,
07/22/2014US8787083 Memory circuit
07/22/2014US8786793 Display device and manufacturing method thereof
07/22/2014US8786646 Light-emitting chip, light-emitting device, print head and image forming apparatus
07/22/2014US8786362 Schottky diode having current leakage protection structure and current leakage protecting method of the same
07/22/2014US8786311 Semiconductor device
07/22/2014US8786107 Semiconductor module
07/22/2014US8786101 Contact structure in a memory device
07/22/2014US8786096 Nonvolatile semiconductor memory having a word line bent towards a select gate line side
07/22/2014US8786090 Al alloy film for display device, display device, and sputtering target
07/22/2014US8786061 Semiconductor device
07/22/2014US8786058 Semiconductor devices and methods of manufacturing the same
07/22/2014US8786057 Integrated circuit on corrugated substrate
07/22/2014US8786053 Gallium-nitride-on-handle substrate materials and devices and method of manufacture
07/22/2014US8786052 Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate
07/22/2014US8786046 Semiconductor device and method for manufacturing the same
07/22/2014US8786045 Power semiconductor devices having termination structures
07/22/2014US8786039 Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
07/22/2014US8786038 Semiconductor storage device and method of manufacturing the same
07/22/2014US8786035 Electronic device having MEMS element and resistive element
07/22/2014US8786034 Hot-melt sealing glass compositions and devices using the same
07/22/2014US8786032 P-type semiconductor device and method for manufacturing the same
07/22/2014US8786029 Semiconductor device and manufacturing method thereof
07/22/2014US8786027 Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stage
07/22/2014US8786024 Semiconductor device comprising bipolar and unipolar transistors including a concave and convex portion
07/22/2014US8786020 Method of fabricating a semiconductor device including a gate having a plurality of fingers extended over a plurality of isolation regions
07/22/2014US8786019 CMOS FinFET device
07/22/2014US8786018 Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition
07/22/2014US8786016 Semiconductor device and method of forming the same
07/22/2014US8786015 Super-junction semiconductor device
07/22/2014US8786014 Vertical channel transistor array and manufacturing method thereof
07/22/2014US8786013 Trench transistor
07/22/2014US8786012 Power semiconductor device and a method for forming a semiconductor device
07/22/2014US8786011 Semiconductor device
07/22/2014US8786010 Superjunction structures for power devices and methods of manufacture
07/22/2014US8786009 Substrate structures including buried wiring, semiconductor devices including substrate structures, and method of fabricating the same
07/22/2014US8786008 Nonvolatile semiconductor memory device and method for manufacturing the same
07/22/2014US8786007 Three-dimensional nonvolatile memory device
07/22/2014US8786006 Flash memory device having a graded composition, high dielectric constant gate insulator
07/22/2014US8786005 One-transistor composite-gate memory
07/22/2014US8786004 3D stacked array having cut-off gate line and fabrication method thereof
07/22/2014US8786003 Nonvolatile semiconductor memory device and method for manufacturing same
07/22/2014US8786002 Semiconductor device
07/22/2014US8786000 Semiconductor device suppressing peeling of lower electrode of capacitor
07/22/2014US8785999 Semiconductor device
07/22/2014US8785997 Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
07/22/2014US8785990 Semiconductor device including first and second or drain electrodes and manufacturing method thereof
07/22/2014US8785989 Semiconductor constructions
07/22/2014US8785988 N-channel metal-oxide field effect transistor with embedded high voltage junction gate field-effect transistor
07/22/2014US8785987 IGFET device having an RF capability
07/22/2014US8785983 Solid-state image pickup device
07/22/2014US8785981 Non-replacement gate nanomesh field effect transistor with pad regions
07/22/2014US8785980 Semiconductor memory device having a low resistance wiring line and method of manufacturing the same
07/22/2014US8785977 High speed SiGe HBT and manufacturing method thereof
07/22/2014US8785976 Polarization super-junction low-loss gallium nitride semiconductor device
07/22/2014US8785975 GAN vertical superjunction device structures and fabrication methods
07/22/2014US8785974 Bumped, self-isolated GaN transistor chip with electrically isolated back surface
07/22/2014US8785973 Ultra high voltage GaN ESD protection device
07/22/2014US8785972 Semiconductor electrostatic protection circuit device
07/22/2014US8785971 Transient voltage suppressor without leakage current
07/22/2014US8785970 HF-controlled bidirectional switch
07/22/2014US8785969 Resurf structure and LDMOS device
07/22/2014US8785968 Silicon controlled rectifier (SCR) device for bulk FinFET technology
07/22/2014US8785949 Light emitting apparatus and method for manufacturing the same
07/22/2014US8785948 Light-emitting device and electronic apparatus
07/22/2014US8785947 Semiconductor substrate for growth of an epitaxial semiconductor device
07/22/2014US8785946 Low 1C screw dislocation 3 inch silicon carbide wafer
07/22/2014US8785945 SiC bipolar junction transistor with overgrown emitter
07/22/2014US8785944 High electron mobility transistor
07/22/2014US8785943 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
07/22/2014US8785942 Nitride semiconductor substrate and method of manufacturing the same
07/22/2014US8785941 Thin-film semiconductor device, display apparatus, and method for manufacturing thin-film semiconductor device
07/22/2014US8785939 Transparent and conductive nanostructure-film pixel electrode and method of making the same
07/22/2014US8785938 Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film
07/22/2014US8785937 Organic light-emitting display apparatus and method of manufacturing the same
07/22/2014US8785935 Etchant, display device and method for manufacturing display device using the same
07/22/2014US8785934 Thin film transistor substrate for display panel
07/22/2014US8785933 Semiconductor device
07/22/2014US8785931 Semiconductor device
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