Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2014
07/17/2014US20140197449 Semiconductor rectifier device
07/17/2014US20140197422 Silicon carbide semiconductor device
07/17/2014US20140197421 Electrode configurations for semiconductor devices
07/17/2014US20140197418 Semiconductor structure having sets of iii-v compound layers and method of forming the same
07/17/2014US20140197416 Memories and methods of forming thin-film transistors using hydrogen plasma doping
07/17/2014US20140197413 Pixel structure and pixel array substrate
07/17/2014US20140197412 Circuit board and display device
07/17/2014US20140197411 Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device
07/17/2014US20140197410 Semiconductor Structure and Method for Manufacturing the Same
07/17/2014US20140197408 Thin-film transistor
07/17/2014US20140197407 Semiconductor device and method for manufacturing the same
07/17/2014US20140197406 Transistor and display device
07/17/2014US20140197405 Rfid tags based on self-assembly nanoparticles
07/17/2014US20140197382 Thin film transistor and display substrate having the same
07/17/2014US20140197377 Cmos nanowire structure
07/17/2014US20140197376 Semiconductor Device
07/17/2014US20140197375 Semiconductor component comprising micro-bridges for adjusting a tensile strain state and method for the production thereof
07/17/2014US20140197371 Overlap capacitance nanowire
07/17/2014US20140197370 Overlap capacitance nanowire
07/17/2014DE112012003083T5 Tunnel-Feldeffekttransistor Tunnel field-effect transistor
07/17/2014DE112011105702T5 Source-/Drain-Kontakte für nicht planare Transistoren Source / drain contacts for non-planar transistors
07/17/2014DE102014100249A1 Halbleiterbauelement mit igbt-zelle und entsättigungskanalstruktur A semiconductor device comprising IGBT cell and entsättigungskanalstruktur
07/17/2014DE102011088010B4 Halbleiterbauelement mit einer Metallgatestruktur mit einer Polysiliziumlegierung und Verfahren zur Herstellung des Halbleiterbauelements A semiconductor device having a metal gate structure comprising a polysilicon alloy and method of manufacturing the semiconductor device
07/17/2014DE102009035688B4 Halbleiterbauelement mit Trenchgatestruktur und Verfahren zur Herstellung desselben Of the same semiconductor device having a trench gate structure and methods for preparing
07/17/2014DE102007008389B4 Schaltungsanordnung zur Übertemperaturerkennung Circuit arrangement for overtemperature detection
07/16/2014EP2755239A1 Semiconductor device and display device
07/16/2014EP2755238A2 Multigate metal oxide semiconductor devices and fabrication methods
07/16/2014EP2755237A2 Trench MOS gate semiconductor device and method of fabricating the same
07/16/2014EP2755236A2 Semiconductor structure including a spatially confined dielectric region
07/16/2014EP2754181A1 Schottky diode
07/16/2014EP2754180A1 Edge termination structure employing recesses for edge termination elements
07/16/2014EP2754179A1 Schottky diode employing recesses for elements of junction barrier array
07/16/2014EP2754178A2 A small size and fully integrated power converter with magnetics on chip
07/16/2014EP2754177A1 High current density power module comprising transistors with improved layout
07/16/2014CN203721735U 电子装置 Electronic devices
07/16/2014CN203721734U 一种低vf的功率mosfet器件 A low power mosfet devices vf
07/16/2014CN203721733U 平面型功率mos器件 Planar type power mos devices
07/16/2014CN203721732U 集成电路和电子设备 Integrated circuits and electronic equipment
07/16/2014CN203721725U 半导体器件和互补金属氧化物半导体半导体器件 Semiconductor devices and complementary metal oxide semiconductor of the semiconductor device
07/16/2014CN203721722U 一种高压电路版图设计结构 A high voltage circuit layout structure
07/16/2014CN103930998A 薄体mosfet的阈值电压调节 Threshold voltage regulator mosfet thin body
07/16/2014CN103930997A 具有凹陷电极结构的半导体器件 Having a recessed electrode structure for a semiconductor device
07/16/2014CN103930996A 半导体器件 Semiconductor devices
07/16/2014CN103930995A 具有反向极化帽的增强模式iii-n族高电子迁移率晶体管 Enhanced mode has a reverse polarization cap iii-n aromatic high electron mobility transistor
07/16/2014CN103930994A 光学倾斜电荷装置及方法 The optical apparatus and method for tilting the charge
07/16/2014CN103930978A 场效应晶体管及其制造方法 The field effect transistor and manufacturing method thereof
07/16/2014CN103930973A 用于制造沟道迁移率增强的半导体器件的湿法化学法 Channel mobility enhancement for manufacturing a semiconductor device of a wet chemical method
07/16/2014CN103928532A 一种碳化硅沟槽mos结势垒肖特基二极管及其制备方法 A silicon carbide trench mos junction barrier Schottky diode and its preparation method
07/16/2014CN103928531A 基于自组装纳米颗粒的rfid标签 Rfid tag-based self-assembly of nanoparticles
07/16/2014CN103928530A 氧化物薄膜晶体管阵列基板及其制造方法 Oxide thin film transistor array substrate and a method of manufacturing
07/16/2014CN103928529A 4H-SiC金属半导体场效应晶体管 4H-SiC MESFET
07/16/2014CN103928528A 一种横向高压功率半导体器件的结终端结构 Junction termination structure of a lateral high-voltage power semiconductor devices
07/16/2014CN103928527A 一种横向高压功率半导体器件的结终端结构 Junction termination structure of a lateral high-voltage power semiconductor devices
07/16/2014CN103928526A 一种横向功率mos高压器件 A widthwise power mos high voltage devices
07/16/2014CN103928525A 场效应晶体管液体传感器及其制备方法 Field effect transistor liquid sensor and its preparation method
07/16/2014CN103928524A 带有n型漂移层台面的碳化硅umosfet器件及制作方法 SiC umosfet device and manufacturing method with the n-type drift layer mesa
07/16/2014CN103928523A 一种测试器件群场效应晶体管及其测试器件群测试方法 A field effect transistor device group and test group method of testing devices
07/16/2014CN103928522A 一种槽型积累层mosfet器件 One kind of groove accumulation layer mosfet devices
07/16/2014CN103928521A 一种鳍型半导体结构及其成型方法 One kind of fin-type semiconductor structure and method of forming
07/16/2014CN103928520A 一种背栅调制全耗尽mos器件及其制备方法 One kind of back gate fully depleted mos modulation device and its preparation method
07/16/2014CN103928519A 半导体元件 Semiconductor components
07/16/2014CN103928518A FinFET器件及其制造方法 FinFET device and its manufacturing method
07/16/2014CN103928517A FinFET器件及其制造方法 FinFET device and its manufacturing method
07/16/2014CN103928516A 具有双平行沟道结构的半导体器件及其制造方法 The method of manufacturing a semiconductor device and a parallel dual-channel structure of the
07/16/2014CN103928515A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/16/2014CN103928514A 功率mosfet及其形成方法 Power mosfet and forming method
07/16/2014CN103928513A 一种沟槽dmos器件及其制作方法 One kind of trench dmos device and manufacturing method thereof
07/16/2014CN103928512A 一种硅基片及横向扩散金属氧化物半导体 A silicon-based chip and LDMOS
07/16/2014CN103928511A 一种适用于氮化镓器件的欧姆接触系统 An ohmic contact system suitable for GaN devices
07/16/2014CN103928510A 晶闸管及其版图结构 Thyristor structure and layout
07/16/2014CN103928509A 具有不连续p型基区的沟槽双极型晶体管 With discrete p-type base region of the bipolar transistor trench
07/16/2014CN103928508A 一种低噪声低损耗绝缘栅双极型晶体管 A low-noise low-loss insulated gate bipolar transistor
07/16/2014CN103928507A 一种逆导型双栅绝缘栅双极型晶体管 One kind of inverse conductivity type double gate insulated gate bipolar transistor
07/16/2014CN103928506A 采用金属发射极的碳化硅双极型晶体管器件及其制作方法 Silicon carbide metal-emitter bipolar transistor device and manufacturing method thereof
07/16/2014CN103928505A 功率金属氧化物半导体晶体管元件 Power metal oxide semiconductor transistor element
07/16/2014CN103928504A 基于m面GaN上的极性InGaN纳米线材料及其制作方法 Polar InGaN based on m-plane GaN nano wire material and manufacturing method thereof
07/16/2014CN103928503A 基于m面GaN上的极性AlGaN纳米线材料及其制作方法 AlGaN-based nano-polar m-plane GaN on-line materials and production methods
07/16/2014CN103928502A 基于m面GaN上的极性GaN纳米线材料及其制作方法 Polar GaN based on m-plane GaN nano wire material and manufacturing method thereof
07/16/2014CN103928501A 基于m面GaN上的极性InN纳米线材料及其制作方法 Based on polar InN on m-plane GaN nano wire material and manufacturing method thereof
07/16/2014CN103928500A 一种横向高压功率半导体器件的结终端结构 Junction termination structure of a lateral high-voltage power semiconductor devices
07/16/2014CN103928499A 一种缓冲型衬底结构及其上的侧向外延生长方法 A buffered substrate structure and the epitaxial lateral overgrowth method
07/16/2014CN103928476A 显示装置及其制造方法 Display device and method of manufacturing
07/16/2014CN103928470A 一种氧化物半导体tft阵列基板及其制造方法 An oxide semiconductor tft array substrate and a method of manufacturing
07/16/2014CN103928468A 闪存结构 Flash memory structure
07/16/2014CN103928466A Flash闪存器件 Flash memory devices
07/16/2014CN103928464A 复合器件及开关电源 Composite devices and switching power supply
07/16/2014CN103928460A 一种射频横向扩散金属氧化物半导体版图结构 A radio frequency LDMOS layout structure
07/16/2014CN103928457A 天线二极管电路及其制造方法 The antenna diode circuit and its manufacturing method
07/16/2014CN103928455A 一种tft阵列基板及其制造方法 One kind of a method of manufacturing the array substrate tft
07/16/2014CN103928349A 鳍式场效晶体管中栅极的分离方法 A fin field effect transistor gate separation method
07/16/2014CN103928348A 双栅极的分离方法 Method for separating a double-gate
07/16/2014CN103928345A 离子注入形成n型重掺杂漂移层台面的碳化硅umosfet器件制备方法 Formed by ion implantation n-type heavily doped drift layer mesa device production method of silicon carbide umosfet
07/16/2014CN103928342A 一种硅纳米线隧穿场效应晶体管及其制作方法 A silicone nanowire tunneling field effect transistor and manufacturing method thereof
07/16/2014CN103928337A 双镶嵌式金属栅极 Dual inlaid metal gate
07/16/2014CN103928336A 一种pmos晶体管及其制备方法 One kind of pmos transistor and its preparation method
07/16/2014CN103928335A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/16/2014CN103928334A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/16/2014CN103928333A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/16/2014CN103928332A 晶体管及其形成方法 Transistor and method of forming
07/16/2014CN103928330A 半导体结构及其形成方法 And a method for forming a semiconductor structure
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