Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2014
08/21/2014US20140235028 High Voltage Resistor with Pin Diode Isolation
08/21/2014US20140235025 Semiconductor device and related fabrication methods
08/21/2014US20140235023 Trench metal oxide semiconductor with recessed trench material and remote contacts
08/21/2014US20140235021 Junction field effect transistor structure with p-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure
08/21/2014US20140235020 Method of manufacturing semiconductor device and semiconductor device
08/21/2014US20140235015 Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
08/21/2014US20140234990 Methodology and Apparatus for Tuning Driving Current of Semiconductor Transistors
08/21/2014US20140232513 Methods for manufacturing and manipulating semiconductor structure having active device
08/21/2014US20140232451 Three terminal semiconductor device with variable capacitance
08/21/2014US20140232433 Circuit element including a layer of a stress-creating material providing a variable stress and method for the formation thereof
08/21/2014US20140231970 Method for processing a carrier, a carrier, an electronic device and a lithographic mask
08/21/2014US20140231969 Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
08/21/2014US20140231968 Conformal Anti-Reflective Coating
08/21/2014US20140231967 Systems and methods for post-bonding wafer edge seal
08/21/2014US20140231965 Microfine structure formation method and microfine structure formed body
08/21/2014US20140231964 Multiple Layer Substrate
08/21/2014US20140231962 Bipolar junction transistor and method of manufacturing the same
08/21/2014US20140231961 Semiconductor device and related fabrication methods
08/21/2014US20140231933 Gas sensor and manufacturing method thereof
08/21/2014US20140231932 Methods and Apparatus of Metal Gate Transistors
08/21/2014US20140231931 In-situ nitridation of gate dielectric for semiconductor devices
08/21/2014US20140231930 Atomic Layer Deposition of Hafnium or Zirconium Alloy Films
08/21/2014US20140231929 Transistors with isolation regions
08/21/2014US20140231928 Super Junction Semiconductor Device with an Edge Area Having a Reverse Blocking Capability
08/21/2014US20140231927 Semiconductor device and manufacturing method thereof
08/21/2014US20140231924 Method For Fabricating A Multi-Gate Device
08/21/2014US20140231922 Semiconductor gate structure for threshold voltage modulation and method of making same
08/21/2014US20140231921 Apparatus for high speed rom cells
08/21/2014US20140231920 Integrated circuits with improved gate uniformity and methods for fabricating same
08/21/2014US20140231918 Finfets and fin isolation structures
08/21/2014US20140231917 Finfet and method for manufacturing the same
08/21/2014US20140231916 Transistor with coupled gate and ground plane
08/21/2014US20140231915 Trilayer SIT Process with Transfer Layer for FINFET Patterning
08/21/2014US20140231914 Fin field effect transistor fabricated with hollow replacement channel
08/21/2014US20140231913 Trilayer SIT Process with Transfer Layer for FINFET Patterning
08/21/2014US20140231912 Super Junction Semiconductor Device with a Nominal Breakdown Voltage in a Cell Area
08/21/2014US20140231911 Ldmos device with double-sloped field plate
08/21/2014US20140231910 Manufacturing a Super Junction Semiconductor Device and Semiconductor Device
08/21/2014US20140231909 Super Junction Semiconductor Device Comprising Implanted Zones
08/21/2014US20140231908 High Voltage Transistor Structure and Method
08/21/2014US20140231907 Methods of inducing a desired stress in the channel region of a transistor by performing ion implantation/anneal processes on the gate electrode
08/21/2014US20140231906 Semiconductor Device
08/21/2014US20140231905 Semiconductor device
08/21/2014US20140231904 Super Junction Semiconductor Device with Overcompensation Zones
08/21/2014US20140231903 Semiconductor Device with a Super Junction Structure Having a Vertical Impurity Distribution
08/21/2014US20140231902 Vertical Tunneling Field-Effect Transistor Cell
08/21/2014US20140231901 Monolithic MOSFET and Schottky Diode for Mobile Phone Boost Converter
08/21/2014US20140231900 Non-volatile memory
08/21/2014US20140231898 Nonvolatile semiconductor memory device
08/21/2014US20140231897 Nonvolatile semiconductor memory device
08/21/2014US20140231896 Nonvolatile semiconductor storage device and method of manufacturing the same
08/21/2014US20140231895 One-Time Programming Device and a Semiconductor Device
08/21/2014US20140231891 Mim capacitor in finfet structure
08/21/2014US20140231890 Mim capacitor in finfet structure
08/21/2014US20140231888 Magneto-Electric Voltage Controlled Spin Transistors
08/21/2014US20140231885 Integrated circuits and methods for fabricating integrated circuits having metal gate electrodes
08/21/2014US20140231884 Bootstrap mos for high voltage applications
08/21/2014US20140231883 Vertical JFET with Integrated Body Diode
08/21/2014US20140231882 Wireless Processor, Wireless Memory, Information System, And Semiconductor Device
08/21/2014US20140231878 Collector-up bipolar junction transistors in bicmos technology
08/21/2014US20140231877 Collector-up bipolar junction transistors in bicmos technology
08/21/2014US20140231876 pHEMT and HBT integrated epitaxial structure
08/21/2014US20140231874 Semiconductor device
08/21/2014US20140231873 Nitride semiconductor device
08/21/2014US20140231872 Method for inducing strain in finfet channels
08/21/2014US20140231871 Methods of containing defects for non-silicon device engineering
08/21/2014US20140231870 Semiconductor structure having silicon devices, column iii-nitride devices, and column iii-non-nitride or column ii-vi devices
08/21/2014US20140231868 Semiconductor device
08/21/2014US20140231867 Diode and semiconductor device including built-in diode
08/21/2014US20140231866 Igbt and method of manufacturing the same
08/21/2014US20140231865 Insulated gate semiconductor device and method for manufacturing the same
08/21/2014US20140231864 High voltage electrostatic discharge protection device
08/21/2014US20140231830 Crystal layered structure and method for manufacturing same, and semiconductor element
08/21/2014US20140231829 Semiconductor device
08/21/2014US20140231828 Semiconductor device
08/21/2014US20140231827 Semiconductor device and manufacturing method thereof
08/21/2014US20140231826 Methods of Growing a Silicon Carbide Epitaxial Layer on a Substrate to Increase and Control Carrier Lifetime
08/21/2014US20140231825 DIAMOND GaN DEVICES AND ASSOCIATED METHODS
08/21/2014US20140231823 Electrodes for semiconductor devices and methods of forming the same
08/21/2014US20140231820 Memory device using graphene as charge-trap layer and method of operating the same
08/21/2014US20140231818 AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE
08/21/2014US20140231817 Iii-n material grown on alo/aln buffer on si substrate
08/21/2014US20140231816 High electron mobility transistor and method of forming the same
08/21/2014US20140231814 Thin film transistor array panel and method of manufacturing the same
08/21/2014US20140231812 Substrate having thin film and method of thin film formation
08/21/2014US20140231811 Semiconductor device structure, method for manufacturing the same and pixel structure using the same
08/21/2014US20140231810 Thin film transistor and manufacturing method thereof
08/21/2014US20140231809 Methodology for fabricating isotropically recessed source regions of cmos transistors
08/21/2014US20140231804 Sensor and method for fabricating the same
08/21/2014US20140231803 Semiconductor device
08/21/2014US20140231801 Semiconductor Memory Device And Manufacturing Method Thereof
08/21/2014US20140231800 Method for manufacturing semiconductor device
08/21/2014US20140231799 Semiconductor device
08/21/2014US20140231798 Thin film transistor and method of producing the same, display device, image sensor, x-ray sensor, and x-ray digital imaging device
08/21/2014US20140231797 Semiconductor device
08/21/2014US20140231752 Graphene device and electronic apparatus
08/21/2014US20140231751 Semiconductor device
08/21/2014US20140231725 Doped aluminum nitride crystals and methods of making them
08/21/2014US20140230730 Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
08/21/2014DE112012005031T5 Randabschluss für Super -Junction -MOSFET -Vorrichtungen Edge termination for Super -Junction -MOSFET flashbulbs
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