Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2014
08/19/2014US8809915 Gate conductor with a diffusion barrier
08/19/2014US8809912 Epitaxial base layers for heterojunction bipolar transistors
08/19/2014US8809911 Semiconductor device
08/19/2014US8809907 Leakage barrier for GaN based HEMT active device
08/19/2014US8809905 Vertical BJT and SCR for ESD
08/19/2014US8809904 Electronic device structure with a semiconductor ledge layer for surface passivation
08/19/2014US8809903 Semiconductor device and power conversion apparatus using the same
08/19/2014US8809902 Power semiconductor diode, IGBT, and method for manufacturing thereof
08/19/2014US8809891 Light-emitting element and display device
08/19/2014US8809881 Light-emitting device
08/19/2014US8809877 Semiconductor voltage transformation structure
08/19/2014US8809876 Absorbing film
08/19/2014US8809875 Micro light emitting diode
08/19/2014US8809872 Bulk finFET with super steep retrograde well
08/19/2014US8809871 Semiconductor element and semiconductor device
08/19/2014US8809870 Semiconductor device
08/19/2014US8809869 Diode with heterojunction of nitride semiconductor layers
08/19/2014US8809868 Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate
08/19/2014US8809867 Dislocation reduction in non-polar III-nitride thin films
08/19/2014US8809863 Thin-film transistor array substrate, organic light-emitting display having the same, and method of manufacturing the organic light-emitting display
08/19/2014US8809862 Semiconductor device and manufacturing method of the same
08/19/2014US8809861 Thin film metal-dielectric-metal transistor
08/19/2014US8809860 III-V compound semiconductor material passivation with crystalline interlayer
08/19/2014US8809859 Devices and methods for embedding semiconductors in printed circuit boards
08/19/2014US8809858 Device for protecting an integrated circuit against back side attacks
08/19/2014US8809857 Thin film transistor comprising oxide semiconductor
08/19/2014US8809856 Semiconductor device
08/19/2014US8809855 Semiconductor device and manufacturing method thereof
08/19/2014US8809854 Semiconductor device
08/19/2014US8809853 Semiconductor device
08/19/2014US8809852 Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
08/19/2014US8809851 Semiconductor device
08/19/2014US8809850 Semiconductor device having switching transistor that includes oxide semiconductor material
08/19/2014US8809847 Photoelectric conversion device and imaging device
08/19/2014US8809845 Display apparatus and image pickup apparatus
08/19/2014US8809840 Organic light emitting device
08/19/2014US8809839 Organic semiconductor polymer, transistor including an organic semiconductor polymer and methods of fabricating the same
08/19/2014US8809838 Organic light emitting diode display
08/19/2014US8809837 Vertical stacking of graphene in a field-effect transistor
08/19/2014US8809836 Techniques for forming contacts to quantum well transistors
08/19/2014US8809835 RF circuits including transistors having strained material layers
08/19/2014US8809834 Photodetector capable of detecting long wavelength radiation
08/19/2014US8809832 Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure
08/19/2014US8809827 Thermally assisted MRAM with multilayer strap and top contact for low thermal conductivity
08/19/2014US8809826 Memory element and memory device
08/19/2014US8809247 Cleaning composition and method for cleaning substrate for electronic device
08/19/2014US8809186 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
08/19/2014US8809177 Semiconductor device and method for manufacturing the same
08/19/2014US8809168 Growing compressively strained silicon directly on silicon at low temperatures
08/19/2014US8809163 Fabricating method of trench-gate metal oxide semiconductor device
08/19/2014US8809153 Graphene transistors with self-aligned gates
08/19/2014US8809151 Transistor comprising an embedded sigma shaped sequentially formed semiconductor alloy
08/19/2014US8809149 High density serial capacitor device and methods of making such a capacitor device
08/19/2014US8809147 Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the same
08/19/2014US8809141 High performance CMOS transistors using PMD liner stress
08/19/2014US8809138 Method of forming a semiconductor device
08/19/2014US8809137 Leakage barrier for GaN based HEMT active device
08/19/2014US8809136 Semiconductor device and method for manufacturing the same
08/19/2014US8809134 Semiconductor structure and method for manufacturing the same
08/19/2014US8809132 Capping layers for metal oxynitride TFTs
08/19/2014US8809115 Method for manufacturing semiconductor device
08/19/2014US8809114 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
08/19/2014US8809093 Methods for fabricating self-aligning semicondutor heterostructures using silicon nanowires
08/19/2014US8809089 Method of manufacturing surface emitting laser, and surface emitting laser, surface emitting laser array, optical scanning device and image forming apparatus
08/19/2014US8808789 Process for forming conductive features
08/14/2014WO2014124044A1 Self-similar and fractal design for stretchable electronics
08/14/2014WO2014123705A1 Three dimensional nand device with semiconductor, metal or silicide floating gates and method of making thereof
08/14/2014WO2014123559A1 Well-oriented 6,13-bis(triisopropylsilylethynyl) pentacene crystals and a temperature-gradient method for producing the same
08/14/2014WO2014122472A1 A bipolar junction transistor structure
08/14/2014US20140227869 Methods of forming a semiconductor device by performing a wet acid etching process while preventing or reducing loss of active area and/or isolation regions
08/14/2014US20140227867 Self-aligned insulating etchstop layer on a metal contact
08/14/2014US20140227857 Methods of Fabricating Semiconductor Devices Including Fin-Shaped Active Regions
08/14/2014US20140227850 FinFET/Tri-Gate Channel Doping for Multiple Threshold Voltage Tuning
08/14/2014US20140227849 Methods of trimming nanowire structures
08/14/2014US20140227847 Method for fabricating a semiconductor device
08/14/2014US20140227846 Double Channel Doping in Transistor Formation
08/14/2014US20140227837 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
08/14/2014US20140227836 Nitride based semiconductor device and method for manufacturing the same
08/14/2014US20140226690 Device package and methods for the fabrication and testing thereof
08/14/2014US20140225884 Light Emitting Device, Method of Driving a Light Emitting Device, Element Substrate, and Electronic Equipment
08/14/2014US20140225647 Semiconductor Device and a Display Device
08/14/2014US20140225234 Semiconductor device having lateral diode
08/14/2014US20140225229 Group iii nitride composite substrate and method for manufacturing the same, and method for manufacturing group iii nitride semiconductor device
08/14/2014US20140225227 Protecting element having first and second high concentration impurity regions separated by insulating region and method
08/14/2014US20140225219 FinFETs with Reduced Parasitic Capacitance and Methods of Forming the Same
08/14/2014US20140225217 Semiconductor device and method of manufacturing the same
08/14/2014US20140225201 Edge and strap cell design for sram array
08/14/2014US20140225199 Changing effective work function using ion implantation during dual work function metal gate integration
08/14/2014US20140225197 Finfet transistor structure and method for making the same
08/14/2014US20140225196 Semiconductor device and method of manufacturing the same
08/14/2014US20140225195 Thin film transistor substrate and method of manufacturing the same
08/14/2014US20140225194 Oxide semiconductor thin film transistor and method for manufacturing the same
08/14/2014US20140225193 Carbon nanostructure device fabrication utilizing protect layers
08/14/2014US20140225192 Semiconductor structure and method for manufacturing the same
08/14/2014US20140225191 Laterally difffused metal oxide semiconductor device and method of forming the same
08/14/2014US20140225190 Semiconductor device employing trenches for active gate and isolation
08/14/2014US20140225189 Method of fabricating semiconductor device
08/14/2014US20140225188 Source and body contact structure for trench-dmos devices using polysilicon
08/14/2014US20140225187 Device structure and manufacturing method using hdp deposited source-body implant block
08/14/2014US20140225186 Lateral extended drain metal oxide semiconductor field effect transistor (ledmosfet) with tapered airgap field plates
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