Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2014
08/21/2014DE112012005022T5 Halbleitervorrichtung und Verfahren zu deren Fertigung A semiconductor device and method of manufacturing
08/21/2014DE112012004966T5 Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung A process for producing a silicon carbide semiconductor device
08/21/2014DE112012004579T5 Halbleitervorrichtung Semiconductor device
08/21/2014DE112012002823T5 Bipolartransistor mit isoliertem Gate Insulated gate bipolar transistor
08/21/2014DE10334819B4 Siliziumkarbid-Halbleitervorrichtung Silicon carbide semiconductor device
08/21/2014DE102014102112A1 Bauelement und Verfahren zur Herstellung eines Bauelements Device and method for manufacturing a device
08/21/2014DE102014101951A1 Superjunction-Halbleitervorrichtung mit Implantationszonen Superjunction semiconductor device implantation zones
08/21/2014DE102014101937A1 Verfahren zum Herstellen einer Superübergang-Halbleitervorrichtung und Halbleitervorrichtung A method for manufacturing a superjunction semiconductor device and semiconductor device
08/21/2014DE102014101859A1 Superjunction-Halbleitervorrichtung mit Überkompensationszonen Superjunction semiconductor device with overcompensation zones
08/21/2014DE102014101847A1 Super-Junction-Halbleitervorrichtung mit einer nominalen Durchbruchsspannung in einem Zellbereich Super junction semiconductor device having a nominal breakdown voltage in a range of cells
08/21/2014DE102014100883A1 Halbleitervorrichtung mit einer Superübergangsstruktur, die eine vertikale Fremdstoffverteilung hat A semiconductor device having a super junction structure that has a vertical impurity distribution
08/21/2014DE102014001217A1 Package für Hochleistungs-Halbleitervorrichtungen Package for high power semiconductor devices
08/21/2014DE102013223503A1 Halbleitervorrichtung Semiconductor device
08/21/2014DE102013220852A1 Integrierte Schaltungen und Verfahren zum Herstellen von integrierten Schaltungen mit Metall-Gate-Elektroden Integrated circuits and methods for manufacturing integrated circuits with metal gate electrodes
08/21/2014DE102013105504A1 Vertikale Tunnel-Feldeffekttransistor-Zelle Vertical tunnel field-effect transistor cell
08/21/2014DE102013101732A1 Sensorsystem Sensor system
08/21/2014DE102010016371B4 Halbleitervorrichtung Semiconductor device
08/21/2014DE102009055328B4 Halbleiterbauelement mit einer Emittersteuerelektrode und IGBT eine solche aufweisend A semiconductor device having a control electrode and emitter IGBT having such a
08/21/2014DE102008054927B4 Halbleitergerät und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
08/21/2014DE102007004331B4 Halbleiterbauelement mit reduziertem mechanischen Stress Semiconductor device with reduced mechanical stress
08/20/2014EP2768027A1 Layer structure for a group-III-nitride normally-off transistor
08/20/2014EP2768021A2 Rectifier circuit and power source circuit
08/20/2014EP2768014A1 Drive circuit substrate and manufacturing method therefor, display device, and electronic device
08/20/2014EP2767620A1 P-doping of group-III-nitride buffer layer structure on a heterosubstrate
08/20/2014EP2767540A1 Dioxaanthanthrene-based compound, laminated structure and molding method thereof, and electronic device and production method thereof
08/20/2014EP2767505A1 Memory device using graphene as charge-trap layer and method of operating the same
08/20/2014EP2766934A2 Semiconductor devices having a recessed electrode structure
08/20/2014EP2766933A1 Systems, devices, and methods with integrable fet-controlled lateral thyristors
08/20/2014EP2766926A1 Planarized semiconductor particles positioned on a substrate
08/20/2014EP2766859A1 Quantum processing device
08/19/2014US8813014 Semiconductor device and method for making the same using semiconductor fin density design rules
08/19/2014US8810130 Light-emitting device and method of manufacturing the same
08/19/2014US8810044 Dicing tape-integrated wafer back surface protective film
08/19/2014US8810043 Semiconductor device
08/19/2014US8810038 Semiconductor device and wiring board
08/19/2014US8810037 Semiconductor device and method for manufacturing the same
08/19/2014US8810033 Barrier layer for integrated circuit contacts
08/19/2014US8810030 MEMS device with stress isolation and method of fabrication
08/19/2014US8810023 Cantilever packages for sensor MEMS (micro-electro-mechanical system)
08/19/2014US8810022 Power and ground planes in package substrate
08/19/2014US8810010 Semiconductor device and method for fabricating the same
08/19/2014US8810009 Method of fabricating a planar semiconductor nanowire
08/19/2014US8810008 Semiconductor element-embedded substrate, and method of manufacturing the substrate
08/19/2014US8810007 Wiring board, semiconductor device, and method for manufacturing wiring board
08/19/2014US8810006 Interposer system and method
08/19/2014US8810005 Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region
08/19/2014US8810004 Methods, systems and devices for electrostatic discharge protection
08/19/2014US8810003 Semiconductor device and method of fabricating the same
08/19/2014US8809999 Semiconductor integrated circuit device and method of fabricating the same
08/19/2014US8809996 Package with passive devices and method of forming the same
08/19/2014US8809993 Semiconductor device having isolation region
08/19/2014US8809992 Semiconductor device and manufacturing method thereof
08/19/2014US8809990 Semiconductor device and method of manufacturing the same
08/19/2014US8809989 Semiconductor device
08/19/2014US8809988 Low leakage and/or low turn-on voltage Schottky diode
08/19/2014US8809987 Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors
08/19/2014US8809986 Semiconductor device
08/19/2014US8809982 Robust high aspect ratio semiconductor device
08/19/2014US8809978 Magnetic memory element and memory apparatus having multiple magnetization directions
08/19/2014US8809977 Semicondcutor device and method for fabricating the same
08/19/2014US8809976 Method and structure for a MRAM device with a bilayer passivation
08/19/2014US8809975 Semiconductor pressure sensor
08/19/2014US8809974 Semiconductor package for MEMS device and method of manufacturing same
08/19/2014US8809973 Chip package comprising a microphone structure and a method of manufacturing the same
08/19/2014US8809971 Semiconductor component
08/19/2014US8809970 Semiconductor device and method for manufacturing the same
08/19/2014US8809969 Semiconductor device
08/19/2014US8809968 Semiconductor layer structure
08/19/2014US8809964 Method of adjusting the threshold voltage of a transistor by a buried trapping layer
08/19/2014US8809962 Transistor with reduced parasitic capacitance
08/19/2014US8809961 Electrostatic discharge (ESD) guard ring protective structure
08/19/2014US8809955 Semiconductor structure and method for manufacturing the same
08/19/2014US8809953 FET structures with trench implantation to improve back channel leakage and body resistance
08/19/2014US8809952 Lateral transistor component and method for producing same
08/19/2014US8809951 Chip packages having dual DMOS devices with power management integrated circuits
08/19/2014US8809950 Semiconductor structure and fabrication method thereof
08/19/2014US8809949 Transistor component having an amorphous channel control layer
08/19/2014US8809948 Device structure and methods of making high density MOSFETs for load switch and DC-DC applications
08/19/2014US8809947 Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures
08/19/2014US8809946 Wide trench termination structure for semiconductor device
08/19/2014US8809945 Semiconductor device having angled trench walls
08/19/2014US8809944 Semiconductor device including a transistor with gate in a trench and a doped region under the trench to modify the threshold voltage
08/19/2014US8809943 Three dimensional semiconductor memory devices and methods of fabricating the same
08/19/2014US8809942 Semiconductor device having trench structure
08/19/2014US8809941 Semiconductor device and method for fabricating the same
08/19/2014US8809939 Semiconductor device
08/19/2014US8809938 Three dimensional semiconductor memory devices
08/19/2014US8809937 Semiconductor devices including device isolation structures and method of forming the same
08/19/2014US8809936 Memory cell system with multiple nitride layers
08/19/2014US8809935 Semiconductor device and method for manufacturing the same
08/19/2014US8809934 Semiconductor device and a manufacturing method thereof
08/19/2014US8809933 Bit line structure, semiconductor device and method of forming the same
08/19/2014US8809932 Semiconductor memory device, method of fabricating the same, and devices employing the semiconductor memory device
08/19/2014US8809931 Nonvolatile semiconductor memory device
08/19/2014US8809930 Semiconductor memory devices
08/19/2014US8809928 Semiconductor device, memory device, and method for manufacturing the semiconductor device
08/19/2014US8809920 Prevention of fin erosion for semiconductor devices
08/19/2014US8809919 Semiconductor device with inverted trapezoidal cross sectional profile in surface areas of substrate
08/19/2014US8809918 MOSFETs with multiple dislocation planes
08/19/2014US8809917 Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
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