Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2014
08/07/2014US20140218652 Semiconductor device and manufacturing method thereof
08/07/2014US20140218100 A New E-fuse Structure Design in Electrical Programmable Redundancy for Embedded Memory Circuit
08/07/2014US20140217562 Power Semiconductor Device with an Edge Termination Region
08/07/2014US20140217561 Double trench rectifier
08/07/2014US20140217558 Semiconductor element
08/07/2014US20140217555 Semiconductor device and manufacturing method thereof
08/07/2014US20140217554 Crystal laminate structure and method for producing same
08/07/2014US20140217553 Template layers for heteroepitaxial deposition of iii nitride semiconductor materials using hvpe processes
08/07/2014US20140217552 Variable capacitance device
08/07/2014US20140217551 Trench isolation for bipolar junction transistors in bicmos technology
08/07/2014US20140217545 Semiconductor device and method for fabricating the same
08/07/2014US20140217544 Methods of forming a transistor device on a bulk substrate and the resulting device
08/07/2014US20140217523 Housing for a Semiconductor Chip and Semiconductor Chip with a Housing
08/07/2014US20140217520 Air-spacer mos transistor
08/07/2014US20140217519 Semiconductor device and method of manufacturing the same
08/07/2014US20140217516 CMOS Image Sensor
08/07/2014US20140217512 Integrated circuits having dummy gate electrodes and methods of forming the same
08/07/2014US20140217507 Diode Structure and Method for Gate All Around Silicon Nanowire Technologies
08/07/2014US20140217506 Diode Structure and Method for FINFET Technologies
08/07/2014US20140217505 Double patterning method for semiconductor devices
08/07/2014US20140217503 Silicon-on-insulator radio-frequency device and method of forming the same
08/07/2014US20140217502 Diode Structure and Method for Wire-Last Nanomesh Technologies
08/07/2014US20140217501 Semiconductor device and method for fabricating the same
08/07/2014US20140217500 Semiconductor Device with Low On Resistance and High Breakdown Voltage
08/07/2014US20140217499 Methods for Forming Semiconductor Regions in Trenches
08/07/2014US20140217498 Recessed access devices and gate electrodes
08/07/2014US20140217497 Mosfet with curved trench feature coupling termination trench to active trench
08/07/2014US20140217496 Semiconductor device and method of manufacturing the same
08/07/2014US20140217495 Integrated Circuit with Power and Sense Transistors
08/07/2014US20140217492 Charge-trap type flash memory device having low-high-low energy band structure as trapping layer
08/07/2014US20140217491 Dense arrays and charge storage devices
08/07/2014US20140217490 Nonvolatile memory device and method of fabricating the same
08/07/2014US20140217489 A method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby
08/07/2014US20140217488 3-D Memory Arrays
08/07/2014US20140217483 Semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer
08/07/2014US20140217482 Integrated circuits having replacement gate structures and methods for fabricating the same
08/07/2014US20140217481 Partial sacrificial dummy gate with cmos device with high-k metal gate
08/07/2014US20140217480 Methods of forming silicon/germanium protection layer above source/drain regions of a transistor and a device having such a protection layer
08/07/2014US20140217479 Finfet with dual workfunction gate structure
08/07/2014US20140217472 Method for fabricating mesa sidewall with spin coated dielectric material and semiconductor element thereof
08/07/2014US20140217471 Ga2O3 SEMICONDUCTOR ELEMENT
08/07/2014US20140217470 Ga2O3 SEMICONDUCTOR ELEMENT
08/07/2014US20140217469 Ga2O3 SEMICONDUCTOR ELEMENT
08/07/2014US20140217468 Planar semiconductor growth on iii-v material
08/07/2014US20140217467 Methods of forming substrates comprised of different semiconductor materials and the resulting device
08/07/2014US20140217466 Semiconductor device
08/07/2014US20140217465 Semiconductor device
08/07/2014US20140217464 Semiconductor device
08/07/2014US20140217463 Bipolar Semiconductor Switch and a Manufacturing Method Therefor
08/07/2014US20140217462 Vertical power component
08/07/2014US20140217424 Semiconductor device, electro-optic device, power conversion device, and electronic apparatus
08/07/2014US20140217422 Field effect silicon carbide transistor
08/07/2014US20140217421 Semiconductor structure and method of manufacturing the same
08/07/2014US20140217420 Methods and structures for preparing single crystal silicon wafers for use as substrates for epitaxial arowth of crack-free aallium nitride fi ms and devices
08/07/2014US20140217419 Semiconductor structures including stacks of indium gallium nitride layers
08/07/2014US20140217416 Nitrides based semiconductor device
08/07/2014US20140217413 Semiconductor device and manufacturing method thereof
08/07/2014US20140217409 Thin film transistor
08/07/2014US20140217405 Ga2O3 SEMICONDUCTOR ELEMENT
08/07/2014US20140217403 Semiconductor device
08/07/2014US20140217402 Method for manufacturing semiconductor device
08/07/2014US20140217401 Semiconductor device and method for manufacturing the same
08/07/2014US20140217400 Semiconductor element structure and manufacturing method for the same
08/07/2014US20140217398 Thin-film transistor device and thin-film transistor display apparatus
08/07/2014US20140217396 Thin film transistor, method of manufacturing the same, and image display device equipped with thin film transistor
08/07/2014US20140217395 Polymeric Materials for Use in Metal-Oxide-Semiconductor Field-Effect Transistors
08/07/2014US20140217363 Low-Resistivity p-Type GaSb Quantum Wells
08/07/2014US20140217362 Semiconductor Device and Method for Manufacturing The Same
08/07/2014DE112012004541T5 Halbleitervorrichtung Semiconductor device
08/07/2014DE112011105785T5 Halbleitervorrichtung Semiconductor device
08/07/2014DE112010004367B4 Selbstausgerichteter Graphentransistor Self-Aligned graphene transistor
08/07/2014DE102014101430A1 Verfahren zum Herstellen eines Halbleiterbauelements mit einer vertikalen Dielektrikumsschicht A method of manufacturing a semiconductor device with a vertical dielectric layer
08/07/2014DE102014101239A1 Bipolarer halbleiterschalter und ein herstellungsverfahren dafür Bipolar semiconductor switch and a manufacturing method for
08/06/2014EP2763181A1 Semiconductor device and method for producing semiconductor device
08/06/2014EP2763180A1 Silicon carbide semiconductor device
08/06/2014EP2763179A2 High Electron Mobility Transistor (HEMT)
08/06/2014EP2763178A1 Igbt and manufacturing method therefor
08/06/2014EP2763177A1 Method of manufacturing a MOS transistor with air spacers
08/06/2014EP2763176A1 Silicon carbide semiconductor device fabrication method
08/06/2014EP2762615A2 Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device
08/06/2014EP2761664A1 Capping dielectric structure for transistor gates
08/06/2014EP2761663A1 Electropositive metal containing layers for semiconductor applications
08/06/2014EP2761662A1 Tungsten gates for non-planar transistors
08/06/2014EP2761661A2 Mct device with base-width-determined latching and non-latching states
08/06/2014EP2761660A1 Bipolar junction transistor with spacer layer and method of manufacturing the same
08/06/2014EP2761648A1 Non-planar transitor fin fabrication
08/06/2014EP2761647A1 Non-planar transistors and methods of fabrication thereof
08/06/2014CN203760484U 改进结构的平面工艺二极管 Improved diode structure planar process
08/06/2014CN203760483U 一种可集成的高压ldmos器件 One kind of devices can be integrated high ldmos
08/06/2014CN203760482U 在硅衬底上的全隔离FinFET晶体管及电隔离晶体管 On a silicon substrate and electrically fully isolated FinFET transistor isolation transistor
08/06/2014CN203760476U 半导体器件 Semiconductor devices
08/06/2014CN203760475U 经抗辐射加固的铝栅cmos反相器和cmos半导体器件 After anti-radiation hardened aluminum gate cmos cmos inverter and semiconductor devices
08/06/2014CN103975441A 薄膜晶体管和图像显示装置 A thin film transistor and an image display apparatus
08/06/2014CN103975440A 半导体器件 Semiconductor devices
08/06/2014CN103975439A 用于降低的电流拥挤的双极性结型晶体管结构及制造其的方法 Reduce current crowding bipolar junction transistor structure and method for manufacturing thereof
08/06/2014CN103975438A 在再生长栅极上具有栅电极和源电极的垂直GaN JFET Having a gate electrode and the source electrode of the vertical GaN JFET gate regrowth
08/06/2014CN103975424A 用于非平面晶体管的夹层电介质 Interlayer dielectric for non-planar transistor
08/06/2014CN103975422A 树脂封装型半导体装置的制造方法以及树脂封装型半导体装置 The method of manufacturing a resin-molded semiconductor device and a resin-molded semiconductor device
08/06/2014CN103972381A 装置结构及其制造方法 Device structure and manufacturing method
08/06/2014CN103972306A 一种具有非连续沟槽设计的肖特基器件结构及其制作方法 Schottky devices having a structure and method of making a non-continuous groove design
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