Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2014
09/02/2014US8822295 Low extension dose implants in SRAM fabrication
09/02/2014US8822293 Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devices
09/02/2014US8822292 Method for forming and controlling molecular level SiO2 interface layer
09/02/2014US8822291 High voltage device
09/02/2014US8822290 FinFETs and methods for forming the same
09/02/2014US8822289 High voltage gate formation
09/02/2014US8822288 NAND memory device containing nanodots and method of making thereof
09/02/2014US8822285 Nonvolatile memory device and method of manufacturing the same
09/02/2014US8822284 Method for fabricating FinFETs and semiconductor structure fabricated using the method
09/02/2014US8822283 Self-aligned insulated film for high-k metal gate device
09/02/2014US8822282 Methods of fabricating contact regions for FET incorporating SiGe
09/02/2014US8822280 Semiconductor device and method of manufacturing semiconductor device
09/02/2014US8822273 Dual lead frame semiconductor package and method of manufacture
09/02/2014US8822272 Semiconductor device, manufacturing method thereof, and measuring method thereof
09/02/2014US8822254 MEMS device and manufacturing method
09/02/2014US8822243 Light emitting devices having light coupling layers with recessed electrodes
09/02/2014US8822045 Passivation of aluminum nitride substrates
09/02/2014US8821762 Anthra[2,3-b]benzo[d]thiophene derivatives and their use as organic semiconductors
08/2014
08/28/2014WO2014130931A1 Strain relief structures for stretchable interconnects
08/28/2014WO2014130802A1 Mix doping of a semi-insulating group iii nitride
08/28/2014WO2014130394A1 Three terminal semiconductor device with variable capacitance
08/28/2014WO2014130185A1 Graphene heterostructure field effect transistors
08/28/2014WO2014129669A1 Display device and electronic device
08/28/2014WO2014129519A1 Peeling method, semiconductor device, and peeling apparatus
08/28/2014WO2014129137A1 Sic single crystal, sic wafer, sic substrate, and sic device
08/28/2014WO2014116316A3 Fully-printed carbon nanotube thin film transistor circuits for organic light emitting diode
08/28/2014WO2014111944A8 Systems and methods for identifying explosives
08/28/2014WO2014051740A3 Non-planar iii-v field effect transistors with conformal metal gate electrode & nitrogen doping of gate dielectric interface
08/28/2014US20140242786 Method of manufacturing nonvolatile semiconductor memory device
08/28/2014US20140242778 Methods of Forming Strained-Semiconductor-on-Insulator Device Structures
08/28/2014US20140242776 Strained Isolation Regions
08/28/2014US20140242771 Method for manufacturing a semiconductor device
08/28/2014US20140242770 Semiconductor process
08/28/2014US20140242769 Method of manufacturing a super-junciton semiconductor device
08/28/2014US20140242768 Reducing wafer distortion through a high cte layer
08/28/2014US20140242766 Method for manufacturing semiconductor device and semiconductor device
08/28/2014US20140242763 Method for fabricating nonvolatile memory structure
08/28/2014US20140242762 Tunable Schottky Diode with Depleted Conduction Path
08/28/2014US20140242761 High electron mobility transistor and method of forming the same
08/28/2014US20140242759 Reducing wafer distortion through a high cte layer
08/28/2014US20140242749 Method for manufacturing semiconductor device
08/28/2014US20140241487 Semiconductor device, driver circuit, and display device
08/28/2014US20140240027 Vertical insulated-gate turn-off device having a planar gate
08/28/2014US20140240025 Lateral insulated gate turn-off devices
08/28/2014US20140239461 Oxygen Monolayer on a Semiconductor
08/28/2014US20140239460 Semiconductor Device Having an Insulating Layer Structure and Method of Manufacturing the Same
08/28/2014US20140239454 Wafer edge protection
08/28/2014US20140239452 Substrate for epitaxial growth, and crystal laminate structure
08/28/2014US20140239451 Semiconductor Devices Including A Lateral Bipolar Structure And Fabrication Methods
08/28/2014US20140239450 Guard structure for semiconductor structure and method of forming guard layout pattern for semiconductor layout pattern
08/28/2014US20140239437 Semiconductor device
08/28/2014US20140239436 High voltage fast recovery trench diode
08/28/2014US20140239435 Super-junction schottky pin diode
08/28/2014US20140239420 Silicon nitride gate encapsulation by implantation
08/28/2014US20140239419 Semiconductor device and method of manufacturing the same
08/28/2014US20140239418 Semiconductor Dielectric Interface and Gate Stack
08/28/2014US20140239417 Semiconductor Device Having Electrode and Manufacturing Method Thereof
08/28/2014US20140239416 Semiconductor device
08/28/2014US20140239415 Stress memorization in rmg finfets
08/28/2014US20140239414 FinFETs and the Methods for Forming the Same
08/28/2014US20140239405 Semiconductor device and fabricating method thereof
08/28/2014US20140239403 Semiconductor device
08/28/2014US20140239402 FinFETs with Strained Well Regions
08/28/2014US20140239401 Silicon nitride gate encapsulation by implantation
08/28/2014US20140239400 Stress in trigate devices using complimentary gate fill materials
08/28/2014US20140239399 Semiconductor device having compressively strained channel region and method of making same
08/28/2014US20140239398 U-shaped semiconductor structure
08/28/2014US20140239397 Jlt (junction-less transistor) device and method for fabricating the same
08/28/2014US20140239396 Metal Gate and Gate Contact Structure for FinFET
08/28/2014US20140239395 Contact resistance reduction in finfets
08/28/2014US20140239394 U-shaped semiconductor structure
08/28/2014US20140239393 Finfet device and method of manufacturing same
08/28/2014US20140239392 Semiconductor device and manufacturing method of semiconductor device
08/28/2014US20140239391 Ldmos with improved breakdown voltage
08/28/2014US20140239390 Lateral devices containing permanent charge
08/28/2014US20140239386 Trench Gated Power Device With Multiple Trench Width and its Fabrication Process
08/28/2014US20140239385 Field effect transistor and method of manufacturing the same
08/28/2014US20140239384 Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing system
08/28/2014US20140239383 Wafer level chip scale package and process of manufacture
08/28/2014US20140239382 High frequency switching mosfets with low output capacitance using a depletable p-shield
08/28/2014US20140239381 Insulated gate field effect transistor and method of manufacturing the same
08/28/2014US20140239379 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
08/28/2014US20140239378 Semiconductor device and method of manufacturing the same
08/28/2014US20140239377 Manufacturing method of semiconductor device, and semiconductor device
08/28/2014US20140239376 Vertical memory devices and methods of manufacturing the same
08/28/2014US20140239375 Memory devices and methods of manufacturing the same
08/28/2014US20140239374 Embedded sonos based memory cells
08/28/2014US20140239373 Semiconductor memory device and method for manufacturing same
08/28/2014US20140239372 Split gate non-volatile memory (nvm) cell and method therefor
08/28/2014US20140239371 Field effect transistor with self-adjusting threshold voltage
08/28/2014US20140239370 Memory device and method of forming the same
08/28/2014US20140239369 Self-aligned charge-trapping layers for non-volatile data storage, processes of forming same, and devices containing same
08/28/2014US20140239368 Semiconductor storage device and method of manufacturing the same
08/28/2014US20140239367 Semiconductor device and a manufacturing method thereof
08/28/2014US20140239365 Method for using nanoparticles to make uniform discrete floating gate layer
08/28/2014US20140239364 MOS Varactor Optimized Layout and Methods
08/28/2014US20140239360 Semiconductor device and a method of manufacturing the same, and solid-state image pickup device using the same
08/28/2014US20140239359 Semiconductor device
08/28/2014US20140239358 Nonplanar device with thinned lower body portion and method of fabrication
08/28/2014US20140239357 Thin film transistor on fiber and manufacturing method of the same
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