Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2014
07/31/2014US20140209862 Group iii nitride epitaxial substrate and method for manufacturing the same
07/31/2014US20140209861 Semiconductor device and fabrication method therefor, and power supply apparatus
07/31/2014US20140209855 Nanowire structures having wrap-around contacts
07/31/2014US20140209854 Nanowire Capacitor for Bidirectional Operation
07/31/2014US20140209840 Thixotropic composition
07/31/2014US20140209156 Bipolar diode having an optical quantum structure absorber
07/31/2014DE102014201521A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
07/31/2014DE102014101164A1 Halbleitervorrichtung mit einem randbereich und verfahren zur herstellung einer halbleitervorrichtung A semiconductor device having an edge portion and method of manufacturing a semiconductor device
07/31/2014DE102014101130A1 Rückwärts sperrende Halbleitervorrichtung, Halbleitervorrichtung mit lokaler Emittereffizienzmodifikation und Methode zur Herstellung einer rückwärtssperrenden Halbleitervorrichtung Reverse blocking semiconductor device, the semiconductor device with local modification emitter efficiency and method for manufacturing a reverse-blocking semiconductor device
07/31/2014DE102014100877A1 Integrierte Schaltung, Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung An integrated circuit semiconductor device and method of manufacturing a semiconductor device
07/31/2014DE102013104197B3 Gate Kontaktstruktur für FinFET und Verfahren zur Herstellung FinFET gate contact structure for and method for producing
07/31/2014DE102013103812A1 Halbleiterbauteil mit Verbindungen über mehrere Ebenen sowie Verfahren zur Ausbildung desselben The same semiconductor component with connections across multiple layers and method of forming
07/31/2014DE102004042348B4 ESD-Halbleiterbauelement mit erhöhter ESD-Robustheit ESD semiconductor device with increased ESD robustness
07/30/2014EP2760051A2 High Electron Mobility Transistor (HEMT)
07/30/2014EP2760050A1 Quantum-dot device
07/30/2014EP2760048A2 Manufacturing method of semiconductor device
07/30/2014EP2759874A1 Circuit for preventing static electricity and display device having the same
07/30/2014CN203746865U 一种薄膜晶体管、阵列基板及显示装置 A thin film transistor array substrate and a display device
07/30/2014CN203746864U 一种薄膜晶体管、阵列基板及显示装置 A thin film transistor array substrate and a display device
07/30/2014CN203746863U 沟槽式功率金氧半场效晶体管 Trench power metal oxide halftime effect transistors
07/30/2014CN203746862U 一种新型碳化硅mosfet器件 A novel SiC mosfet devices
07/30/2014CN203746861U 一种igbt终端结构 One kind igbt terminal structure
07/30/2014CN203746860U 一种igbt芯片结构 One kind igbt chip architecture
07/30/2014CN203746859U 双极栅低电压功率器件用外延片 Gate bipolar power devices with low voltage wafer
07/30/2014CN203746851U 新型耐高压二极管 The new high voltage diode
07/30/2014CN103959479A 高压沟槽结势垒肖特基二极管 High voltage junction barrier Schottky diode trench
07/30/2014CN103959478A 用于制造高效能和电稳定的半导体金属氧化物层的方法，用该方法制造的层及其用途 For the manufacture of high performance and stability of the method of electrically semiconductive metal oxide layer, a layer manufactured by the method and use thereof
07/30/2014CN103959477A 非晶氧化物半导体薄膜晶体管制造方法 An amorphous oxide semiconductor thin film transistor manufacturing method
07/30/2014CN103959476A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/30/2014CN103959475A 半导体装置 Semiconductor device
07/30/2014CN103959474A 单片集成的垂直jfet和肖特基二极管 Monolithically integrated Schottky diode and vertical jfet
07/30/2014CN103959473A 半导体器件 Semiconductor devices
07/30/2014CN103959472A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/30/2014CN103959471A 用于制造碳化硅半导体器件的方法 The method for manufacturing a silicon carbide semiconductor device
07/30/2014CN103959463A 片上电容器及其组装方法 The on-chip capacitor and method of assembly
07/30/2014CN103959458A 用于将电压浮置或者将电压施加置集成电路的阱的方法和设备 A method and apparatus for applying a voltage to the well voltage of the floating or set of integrated circuits
07/30/2014CN103959456A 具有改进的电特性的绝缘体上半导体结构 The insulator having improved electrical characteristics of the semiconductor structure
07/30/2014CN103958520A 具有半导体特性的化合物及相关组合物和装置 Compounds and related compositions and devices having semiconductor characteristics
07/30/2014CN103956390A 一种沟槽式肖特基芯片及其制造方法 One kind of trench Schottky chip and its manufacturing method
07/30/2014CN103956389A 一种阶梯式沟槽mos肖特基二极管器件 One kind of stepped trench Schottky diode device mos
07/30/2014CN103956388A 肖特基二极管半导体器件及其制备方法 Schottky diode semiconductor device and its preparation method
07/30/2014CN103956387A 一种浪涌防护器件 One kind of surge protection devices
07/30/2014CN103956386A 薄膜晶体管及制备方法、阵列基板及制备方法和显示装置 Thin film transistor and method of preparation, array substrate preparation method and display device
07/30/2014CN103956385A 一种jfet器件及其制造方法 One kind jfet device and manufacturing method thereof
07/30/2014CN103956384A 一种高压pmos晶体管及其制备方法 A high voltage pmos transistor and its preparation method
07/30/2014CN103956383A 一种基于多顶栅结构的晶体管 A top-gate transistor structure-based multi-
07/30/2014CN103956382A 一种沟槽功率器件结构及其制造方法 One kind of a trench power device structure and manufacturing method
07/30/2014CN103956381A 一种mos栅控晶闸管 One kind mos gated thyristor
07/30/2014CN103956380A 一种igbt芯片及其制造方法 One kind igbt chip and its manufacturing method
07/30/2014CN103956379A 具有优化嵌入原胞结构的cstbt器件 With optimized embedded devices cstbt original cell structure
07/30/2014CN103956378A 形成镍硅化物的方法、半导体器件及其形成方法 The method of forming a nickel silicide, a semiconductor device and method of forming
07/30/2014CN103956377A 双高阻层槽形栅多晶硅结构的联栅晶体管 Union high resistance layer trough double-gate transistor gate polysilicon structure
07/30/2014CN103956341A 一种汽车发电机用旋接式二极管 An automobile generators screwing diode
07/30/2014CN103956336A 用于制造可转移半导体结构、器件和器件构件的松脱策略 For the manufacture of semiconductor structures can be transferred, devices and device components loose strategy
07/30/2014CN103956323A 半导体器件及其形成方法、非瞬时计算机可读存储介质 Semiconductor device and method for forming a non-transitory computer-readable storage medium
07/30/2014CN102986012B 薄膜晶体管基板及其制造方法和液晶显示面板 A thin film transistor substrate and a method of manufacturing the liquid crystal display panel
07/30/2014CN102610607B 可挠式显示器 Flexible type display
07/30/2014CN102522427B 半导体装置 Semiconductor device
07/30/2014CN102484132B 隧道场效应器件 Tunnel field effect device
07/30/2014CN102437185B 半导体器件的金属栅结构 Metal gate structure of a semiconductor device
07/30/2014CN102365747B 补偿门极misfet及其制造方法 Compensating a gate and method of manufacturing misfet
07/30/2014CN102244098B 半导体装置及其制造方法 Semiconductor device and manufacturing method
07/30/2014CN102239562B 制造隧穿晶体管的方法和包括隧穿晶体管的ic The method of manufacturing a transistor, and includes a tunneling tunneling transistor ic
07/30/2014CN102169905B 薄膜晶体管基板及显示器件 Thin film transistor substrate and display device
07/30/2014CN102137959B 晶体制造装置、使用该晶体制造装置制造的半导体设备以及使用该晶体制造装置制造半导体设备的方法 Crystal manufacturing apparatus using the semiconductor device manufacturing apparatus for manufacturing a crystal of the crystal and the use of a method of manufacturing a semiconductor device manufacturing apparatus
07/30/2014CN101208805B 纳米尺度沟道晶体管的块接触结构 Block contact structure nanoscale channel transistors
07/30/2014CN101124672B 非易失性半导体存储装置 The nonvolatile semiconductor memory device
07/29/2014US8791577 Bit cell with triple patterned metal layer structures
07/29/2014US8791571 System and method for preventing etch arcing during semiconductor processing
07/29/2014US8791570 Semiconductor device having a multilayer interconnection structure
07/29/2014US8791569 Semiconductor apparatus
07/29/2014US8791566 Aluminum nitride substrate, aluminum nitride circuit board, semiconductor apparatus, and method for manufacturing aluminum nitride substrate
07/29/2014US8791558 Stacked semiconductor package
07/29/2014US8791552 Semiconductor memory device and method for manufacturing the same
07/29/2014US8791551 Well-through type diode element/component and manufacturing method for them
07/29/2014US8791549 Wafer backside interconnect structure connected to TSVs
07/29/2014US8791547 Avalanche diode having an enhanced defect concentration level and method of making the same
07/29/2014US8791546 Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations
07/29/2014US8791543 Composite reconstituted wafer structures
07/29/2014US8791540 Thin semiconductor device having embedded die support and methods of making the same
07/29/2014US8791539 Thin semiconductor device having embedded die support and methods of making the same
07/29/2014US8791535 Semiconductor storage device
07/29/2014US8791533 Semiconductor package having an interposer configured for magnetic signaling
07/29/2014US8791532 Sensor mounted in flip-chip technology on a substrate
07/29/2014US8791531 Package with a CMOS die positioned underneath a MEMS die
07/29/2014US8791529 Semiconductor device including gate and conductor electrodes
07/29/2014US8791528 Methods of manufacturing metal-silicide features
07/29/2014US8791527 Device layout in integrated circuits to reduce stress from embedded silicon—germanium
07/29/2014US8791526 Vertical type integrated circuit devices and memory devices including conductive lines supported by Mesa structures and methods of fabricating the same
07/29/2014US8791525 Power semiconductor device including a double metal contact
07/29/2014US8791524 Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device
07/29/2014US8791523 Nonvolatile semiconductor storage device and method for manufacturing same
07/29/2014US8791522 Non-volatile memory
07/29/2014US8791521 Semiconductor device and method of manufacturing the same
07/29/2014US8791520 Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer
07/29/2014US8791519 High dielectric constant transition metal oxide materials
07/29/2014US8791517 Semiconductor device
07/29/2014US8791515 Spin field effect logic devices
07/29/2014US8791513 Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same
07/29/2014US8791511 Semiconductor device and manufacturing method thereof
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