| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/24/2014 | US20140203352 Vertical Tunneling Field-Effect Transistor Cell and Fabricating the Same |
| 07/24/2014 | US20140203351 Vertical Tunneling Field-Effect Transistor Cell and Fabricating the Same |
| 07/24/2014 | US20140203350 Vertical Tunneling Field-Effect Transistor Cell and Fabricating the Same |
| 07/24/2014 | US20140203349 Method of producing a high-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure |
| 07/24/2014 | US20140203348 Semiconductor devices and methods of fabricating the same |
| 07/24/2014 | US20140203347 Method of making a non-volatile memory (nvm) cell structure |
| 07/24/2014 | US20140203346 Vertical type semiconductor devices including a metal gate and methods of forming the same |
| 07/24/2014 | US20140203344 3d memory |
| 07/24/2014 | US20140203343 Non-volatile Memory Cell Having A Floating Gate And A Coupling Gate With Improved Coupling Ratio Therebetween |
| 07/24/2014 | US20140203339 Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure |
| 07/24/2014 | US20140203338 FinFET Device with Epitaxial Structure |
| 07/24/2014 | US20140203337 Method of forming gate dielectric layer and method of fabricating semiconductor device |
| 07/24/2014 | US20140203336 ADHESION LAYER AND MULTIPHASE ULTRA-LOW k DIELECTRIC MATERIAL |
| 07/24/2014 | US20140203335 Semiconductor Devices and Methods for Fabricating the Same |
| 07/24/2014 | US20140203334 Method for fabricating a finfet device including a stem region of a fin element |
| 07/24/2014 | US20140203333 Semiconductor device having modified profile metal gate |
| 07/24/2014 | US20140203332 Self-aligned biosensors with enhanced sensitivity |
| 07/24/2014 | US20140203329 Nitride electronic device and method for fabricating nitride electronic device |
| 07/24/2014 | US20140203328 Method and system for a gallium nitride vertical jfet with self-aligned gate metallization |
| 07/24/2014 | US20140203327 Deep gate-all-around semiconductor device having germanium or group iii-v active layer |
| 07/24/2014 | US20140203326 Methods of forming hetero-layers with reduced surface roughness and bulk defect density on non-native surfaces and the structures formed thereby |
| 07/24/2014 | US20140203324 A strip-shaped gate-modulated tunneling field effect transistor and a preparation method thereof |
| 07/24/2014 | US20140203309 Electroluminescence display device |
| 07/24/2014 | US20140203300 SiC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF |
| 07/24/2014 | US20140203299 Semiconductor device |
| 07/24/2014 | US20140203298 Strained silicon carbide channel for electron mobility of nmos |
| 07/24/2014 | US20140203295 Integrated power device with iii-nitride half bridges |
| 07/24/2014 | US20140203294 Gallium Nitride Devices |
| 07/24/2014 | US20140203290 Wire-Last Integration Method and Structure for III-V Nanowire Devices |
| 07/24/2014 | US20140203289 High Electron Mobility Transistors |
| 07/24/2014 | US20140203288 Compound semiconductor device having gallium nitride gate structures |
| 07/24/2014 | US20140203284 Semiconductor Device and Method for Manufacturing the Same |
| 07/24/2014 | US20140203277 Semiconductor device and method for manufacturing the same |
| 07/24/2014 | US20140203274 Tft structure, lcd device, and method for manufacturing tft |
| 07/24/2014 | US20140203243 Three-dimensional quantum well transistor and fabrication method |
| 07/24/2014 | US20140203238 Wire-Last Integration Method and Structure for III-V Nanowire Devices |
| 07/24/2014 | US20140203235 Conductive bridge resistive memory device and method of manufacturing the same |
| 07/24/2014 | DE112012004043T5 Halbleitereinrichtung Semiconductor device |
| 07/24/2014 | DE112012004026T5 Halbleitervorrichtung Semiconductor device |
| 07/24/2014 | DE112007000092B4 Gruppe-III-Nitrid-Leistungshalbleiter mit einem Feld-Relaxations-Merkmal Group III-nitride power semiconductor with a field-relaxation characteristic |
| 07/24/2014 | DE112006002876B4 MOSFETs und Verfahren zum Herstellen eines MOSFETs MOSFET and method of manufacturing a MOSFET |
| 07/24/2014 | DE102014100744A1 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same |
| 07/24/2014 | DE102014100397A1 Halbleitervorrichtung und Herstellungsverfahren dafür A semiconductor device and manufacturing method thereof |
| 07/24/2014 | DE102013105701A1 Verbindungshalbleiterbauteil, das Galliumnitrid-Gatestrukturen aufweist Compound semiconductor component, the gallium nitride gate structures |
| 07/24/2014 | DE102013105449A1 Vertikale Tunnel-Feldeffekttransistorzelle und Herstellung derselben Vertical tunnel field-effect transistor cell and preparation thereof |
| 07/24/2014 | DE102013104523A1 Verfahren zur Herstellung einer FinFET-Vorrichtung einschließlich eines Fußbereichs eines Grat-Elements A method of manufacturing a FinFET device including a root portion of a ridge element |
| 07/23/2014 | EP2757812A1 Semiconductor device and microphone |
| 07/23/2014 | EP2757590A1 Transistor with a gate coupled to the ground plane |
| 07/23/2014 | EP2757589A2 Methods for fabricating a thin film transistor and an array substrate |
| 07/23/2014 | EP2757588A1 Silicon carbide semiconductor device and method for manufacturing same |
| 07/23/2014 | EP2756524A1 Resistive switching devices having alloyed electrodes and methods of formation thereof |
| 07/23/2014 | EP2755978A1 Compounds having semiconducting properties and related compositions and devices |
| 07/23/2014 | CN203733810U 一种基于电容结构的hemt栅泄漏电流分离结构 Based hemt gate leakage current of the capacitor structure separated structure |
| 07/23/2014 | CN203733809U 一种软快恢复二极管 A soft fast recovery diode |
| 07/23/2014 | CN203733808U 整流二极管器件 Rectifier diode device |
| 07/23/2014 | CN203733807U 高可靠性表面贴装二极管 High Reliability Surface Mount Diode |
| 07/23/2014 | CN203733806U 轴向型贴片二极管器件 Axial SMD diode device |
| 07/23/2014 | CN203733805U 低功耗整流器件 Low-power rectifier |
| 07/23/2014 | CN203733804U 晶体管 Transistor |
| 07/23/2014 | CN203733803U 半导体器件 Semiconductor devices |
| 07/23/2014 | CN203733802U 一种具有超结结构的半导体器件 A semiconductor device having a super junction structure |
| 07/23/2014 | CN203733801U 晶圆减薄结构 Wafer thinning structure |
| 07/23/2014 | CN203733800U 半导体装置及其终端区结构 Semiconductor device and terminal area structure |
| 07/23/2014 | CN103946985A 半导体装置及半导体装置的制造方法 Semiconductor device and manufacturing method of a semiconductor device |
| 07/23/2014 | CN103946984A 半导体装置 Semiconductor device |
| 07/23/2014 | CN103946983A 半导体装置和半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device |
| 07/23/2014 | CN103946974A 存储元件、存储装置 Storage element, the storage device |
| 07/23/2014 | CN103946964A 掺杂碳纳米管和石墨烯用于改善电子迁移率 The doped carbon nanotubes and graphene for improving electron mobility |
| 07/23/2014 | CN103946930A 无定形导电性氧化物膜的形成方法 The method for forming the amorphous oxide film, the conductive |
| 07/23/2014 | CN103946742A 半导体装置、显示装置和半导体装置的制造方法 A semiconductor device, a display device and a method of manufacturing a semiconductor device |
| 07/23/2014 | CN103946431A 制造碳化硅半导体器件的方法 The method of manufacturing a silicon carbide semiconductor device |
| 07/23/2014 | CN103943688A 一种肖特基势垒二极管器件结构及其制作方法 One kind of a Schottky barrier diode device structure and manufacturing method thereof |
| 07/23/2014 | CN103943687A 具有CrCu合金势垒的肖特基势垒二极管 Has CrCu alloy barrier Schottky barrier diode |
| 07/23/2014 | CN103943686A 一种封装免焊片的肖特基势垒二极管芯片制备方法 A packaged-free solder tabs Schottky barrier diode chip preparation |
| 07/23/2014 | CN103943685A 一种薄膜晶体管 A thin film transistor |
| 07/23/2014 | CN103943684A 薄膜晶体管及其制作方法、阵列基板、显示装置 Thin film transistor and manufacturing method, the array substrate, a display device |
| 07/23/2014 | CN103943683A 一种铟锡锌氧化物同质薄膜晶体管及其制备方法 One kind of indium-tin-zinc oxide thin film transistor homogeneity and preparation method |
| 07/23/2014 | CN103943682A 薄膜晶体管及具有薄膜晶体管的显示装置 A thin film transistor and a display device having a thin film transistor, |
| 07/23/2014 | CN103943681A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 07/23/2014 | CN103943680A 半导体装置 Semiconductor device |
| 07/23/2014 | CN103943679A 用于电流控制的半导体装置及其制造方法 Semiconductor device and manufacturing method for the current control |
| 07/23/2014 | CN103943678A 一种半导体器件及其制造方法 A semiconductor device and its manufacturing method |
| 07/23/2014 | CN103943677A 一种芯片尺寸级氮化镓基晶体管及其制备方法 A chip size of the gallium nitride-based transistor stage and preparation method |
| 07/23/2014 | CN103943676A 半导体装置及其制造方法、电源装置和高频放大器 Semiconductor device and manufacturing method of the power supply apparatus and a high-frequency amplifier |
| 07/23/2014 | CN103943675A 半导体装置及其制造方法、电源装置和高频放大器 Semiconductor device and manufacturing method of the power supply apparatus and a high-frequency amplifier |
| 07/23/2014 | CN103943674A 高电子迁移率晶体管 High electron mobility transistor |
| 07/23/2014 | CN103943673A 具有不连续沟槽的沟槽双极型晶体管 A trench having a discontinuous groove bipolar transistor |
| 07/23/2014 | CN103943672A 处理含氧半导体晶片的方法及半导体元件 An oxygen-containing semiconductor wafer processing method and a semiconductor element |
| 07/23/2014 | CN103943671A 一种功率半导体器件及其形成方法 A power semiconductor device and method of forming |
| 07/23/2014 | CN103943670A 超结集电区应变硅异质结双极晶体管 Super Collection of electric District strained silicon heterojunction bipolar transistor |
| 07/23/2014 | CN103943669A 一种反熔丝结构及其制备方法 An anti-fuse structure and preparation method |
| 07/23/2014 | CN103943668A 带有加强的3d resurf的半导体器件 Semiconductor devices with enhanced 3d resurf of |
| 07/23/2014 | CN103943667A 一种化学配比失配绝缘材料电荷补偿的半导体结装置及其制备方法 A stoichiometric semiconductor junction device mismatch charge compensation of insulating material and its preparation method |
| 07/23/2014 | CN103943666A 一种沟槽半导体装置及其制备方法 A semiconductor device and a method for preparing a trench |
| 07/23/2014 | CN103943665A 半导体装置及其制造方法与操作方法 The semiconductor device and its manufacturing method and operating method |
| 07/23/2014 | CN103943636A 一种薄膜晶体管阵列基板及其制作方法 A thin film transistor array substrate and manufacturing method thereof |
| 07/23/2014 | CN103943622A 半导体装置结构及形成cmos集成电路结构的方法 The semiconductor device structure and method of forming an integrated circuit structure cmos |
| 07/23/2014 | CN103943505A 一种半导体器件及其制造方法 A semiconductor device and its manufacturing method |
| 07/23/2014 | CN103943504A 一种半导体器件及其制备方法 A semiconductor device and its preparation method |
| 07/23/2014 | CN103943503A Mosfet的bto结构制造工艺方法 Bto manufacturing process for the structure of Mosfet |