Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2014
08/28/2014US20140239356 Semiconductor device
08/28/2014US20140239355 Fin field-effect transistors and fabrication method thereof
08/28/2014US20140239354 FinFETs and Methods for Forming the Same
08/28/2014US20140239350 Semiconductor device containing hemt and misfet and method of forming the same
08/28/2014US20140239349 Drain Pad Having a Reduced Termination Electric Field
08/28/2014US20140239348 Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
08/28/2014US20140239347 Structure and Method for Defect Passivation To Reduce Junction Leakage For FinFET Device
08/28/2014US20140239346 Mishfet and schottky device integration
08/28/2014US20140239345 Strained transistor integration for cmos
08/28/2014US20140239344 Power semiconductor device and method of fabricating the same
08/28/2014US20140239343 Bi-directional silicon controlled rectifier structure
08/28/2014US20140239311 Semiconductor device
08/28/2014US20140239309 Heterostructure Power Transistor With AlSiN Passivation Layer
08/28/2014US20140239308 Mix doping of a semi-insulating group iii nitride
08/28/2014US20140239307 REO GATE DIELECTRIC FOR III-N DEVICE ON Si SUBSTRATE
08/28/2014US20140239306 High electron mobility transistor and method of forming the same
08/28/2014US20140239305 Method of optimizing a ga-nitride device material structure for a frequency multiplication device
08/28/2014US20140239299 Semiconductor Device, Power Circuit, And Manufacturing Method Of Semiconductor Device
08/28/2014US20140239298 Semiconductor device and method for manufacturing semiconductor device
08/28/2014US20140239297 Semiconductor device and method of manufacturing the same
08/28/2014US20140239296 Semiconductor Device and Method for Manufacturing the Same
08/28/2014US20140239295 Zinc oxide-based sputtering target, method of preparing the same, and thin film transistor including a barrier layer deposited by the zinc oxide-based sputtering target
08/28/2014US20140239294 Semiconductor device
08/28/2014US20140239293 Semiconductor device
08/28/2014US20140239292 Methods of forming oxide thin film and electrical devices and thin film transistors using the methods
08/28/2014US20140239291 Metal-oxide semiconductor thin film transistors and methods of manufacturing the same
08/28/2014US20140239290 Thin-film transistor substrate and method of manufacturing the same
08/28/2014US20140239289 Semiconductor device and method for manufacturing the same
08/28/2014US20140239267 Thin Film Semiconductor Device, Organic Light-Emitting Display Apparatus, and Method of Manufacturing the Thin Film Semiconductor Device
08/28/2014US20140239258 TFET with Nanowire Source
08/28/2014US20140239257 Graphene heterostructure field effect transistors
08/28/2014US20140239256 Method of manufacturing graphene laminated structure, graphene laminated structure, and electronic device including the graphene laminated structure
08/28/2014US20140239255 Integrated circuit devices and fabricating method thereof
08/28/2014US20140239254 Generation of multiple diameter nanowire field effect transistors
08/28/2014US20140239249 Rapid biological synthesis process to produce semiconducting chalcogenide nanostructures for transistor or solar cell applications
08/28/2014US20140239247 Transistor, resistance variable memory device including the same, and manufacturing method thereof
08/28/2014US20140239244 Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
08/28/2014DE112013000360T5 Halbleitereinheit mit einem Low-k-Abstandhalter und Verfahren zur Herstellung derselben Semiconductor device with a low-k spacers and methods for making same
08/28/2014DE112012005166T5 Verfahren und Struktur zum Bilden von On-Chip-Kondensatoren hoher Qualität mit ETSOI-Transistoren A method and structure for forming on-chip capacitors of high quality with ETSOI transistors
08/28/2014DE112011106033T5 Halbleiterbauelemente mit einer aktiven Germaniumschicht mit darunterliegender Diffusionssperrschicht Semiconductor devices with an active layer with germanium underlying diffusion barrier layer
08/28/2014DE112011105633T5 Siliziumkarbidhalbleitervorrichtung und Verfahren zu ihrer Herstellung Silicon carbide semiconductor device and process for their preparation
08/28/2014DE102014101074A1 Durchkontaktierungen und Verfahren zu ihrer Ausbildung Vias and methods of training
08/28/2014DE102013104015A1 Verfahren für die Ausbildung eines Halbleiterbauteils A method for forming a semiconductor device
08/28/2014DE102012205320B4 Verfahren mit Polysiliziumentfernung durch Trockenätzung in Austauschgates Method with polysilicon removal by dry etching in exchange Gates
08/28/2014DE102008047378B4 Leistungsbauelemente und Verfahren zum Herstellen eines Leistungsbauelements sowie zum Herstellen einer Maske für eine Metallisierung Power devices and methods for producing a power component and for producing a mask for metallization
08/28/2014DE102004039981B4 MOS-Gatterverknüpfte Vorrichtung vom Grabentyp mit einer verspannten Schicht an der Grabenseitenwand MOS gate Linked device type from the grave with a strained layer at the grave side wall
08/27/2014EP2770538A1 Fin type semiconductor structure suitable for producing esd protection device
08/27/2014EP2770537A1 Silicon carbide semiconductor device and method for manufacturing same
08/27/2014EP2770536A1 Thin film transistor and manufacturing method thereof
08/27/2014EP2770535A2 Semiconductor device
08/27/2014EP2770534A1 Semiconductor device and method of manufacturing the same
08/27/2014EP2770369A1 Pixel unit, array substrate, liquid crystal panel and manufacturing method for array substrate
08/27/2014EP2769417A1 Systems and methods for deterministic emitter switch microscopy
08/27/2014EP2769416A2 Method for producing an organised network of semiconductor nanowires made of zno
08/27/2014EP2769006A2 Ordered stacked sheets of layered inorganic compounds, nanostructures comprising them, processes for their preparation and uses thereof
08/27/2014EP2769003A1 A single crystal high dielectric constant material
08/26/2014US8818265 Interface for communication between voltage domains
08/26/2014US8817563 Sensing circuit for programmable resistive device using diode as program selector
08/26/2014US8817534 Techniques for providing a semiconductor memory device
08/26/2014US8817435 Integrated electrostatic discharge (ESD) device
08/26/2014US8816515 Semiconductor module having sliding case and manufacturing method thereof
08/26/2014US8816514 Microelectronic assembly with joined bond elements having lowered inductance
08/26/2014US8816513 Electronic assembly with three dimensional inkjet printed traces
08/26/2014US8816512 Light emitting device module
08/26/2014US8816509 Semiconductor package including underfill layers
08/26/2014US8816508 Integrated lighting apparatus having a control device and method of manufacturing the same
08/26/2014US8816504 Device including two semiconductor chips and manufacturing thereof
08/26/2014US8816502 Integrated circuit device and method for manufacturing same
08/26/2014US8816500 Semiconductor device having peripheral polymer structures
08/26/2014US8816493 Semiconductor device
08/26/2014US8816480 Electronic device packages and methods of manufacturing the same
08/26/2014US8816478 Semiconductor device having penetration electrode penetrating through semiconductor substrate
08/26/2014US8816477 Semiconductor package having a contamination preventing layer formed in the semiconductor chip
08/26/2014US8816476 Through silicon via processing techniques for lateral double-diffused MOSFETS
08/26/2014US8816474 Capacitor structure
08/26/2014US8816473 Planar polysilicon regions for precision resistors and electrical fuses and method of fabrication
08/26/2014US8816472 Semiconductor device and method for manufacturing the same
08/26/2014US8816471 Electrical signal isolation and linearity in SOI structures
08/26/2014US8816470 Independently voltage controlled volume of silicon on a silicon on insulator chip
08/26/2014US8816469 Semiconductor device comprising protection circuit with oxide semiconductor
08/26/2014US8816468 Schottky rectifier
08/26/2014US8816467 Semiconductor device and method for manufacturing same
08/26/2014US8816466 Protective element for electronic circuits
08/26/2014US8816456 Magnetoresistive device and a method of forming the same
08/26/2014US8816455 Memory devices with magnetic random access memory (MRAM) cells and associated structures for connecting the MRAM cells
08/26/2014US8816454 Component having a micromechanical microphone pattern
08/26/2014US8816453 MEMS component and a semiconductor component in a common housing having at least one access opening
08/26/2014US8816452 Electric device and method of manufacturing the same
08/26/2014US8816451 MEMS structure and manufacturing method thereof
08/26/2014US8816450 Fibrous projections structure
08/26/2014US8816449 Self-aligned MOS structure with local interconnects and self-aligned source/drain polysilicon contacts
08/26/2014US8816448 Semiconductor device and manufacturing method thereof
08/26/2014US8816447 Transistor with reduced depletion field width
08/26/2014US8816446 Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal
08/26/2014US8816445 Power MOSFET device with a gate conductor surrounding source and drain pillars
08/26/2014US8816440 Low noise and high performance LSI device
08/26/2014US8816439 Gate structure of semiconductor device
08/26/2014US8816438 Process charging protection for split gate charge trapping flash
08/26/2014US8816437 Semiconductor device and method for manufacturing same
08/26/2014US8816436 Method and structure for forming fin resistors
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