Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2014
09/04/2014WO2013126458A8 Improved structures, devices and methods related to copper interconnects for compound semiconductors
09/04/2014WO2010010482A9 Integrated circuit
09/04/2014US20140248760 Methods of forming dual gate structures
09/04/2014US20140248753 Analog transistor
09/04/2014US20140248752 Method for fabricating semiconductor device having spacer elements
09/04/2014US20140248751 Method and apparatus for enhancing channel strain
09/04/2014US20140248750 Vertical type semiconductor device and fabrication method thereof
09/04/2014US20140248749 Stress memorization technique
09/04/2014US20140247674 Vertical access device and apparatuses having a body connection line, and related method of operating the same
09/04/2014US20140247412 Semiconductor device and method of manufacturing the same
09/04/2014US20140247204 Pixel circuit, display device, and method of driving pixel circuit
09/04/2014US20140246762 Semiconductor device having deep wells and fabrication method thereof
09/04/2014US20140246761 Fast recovery switching diode with carrier storage area
09/04/2014US20140246760 Charge Protection for III-Nitride Devices
09/04/2014US20140246759 Semiconductor device structures comprising a polymer bonded to a base material and methods of fabrication
09/04/2014US20140246755 Semiconductor device and method for producing semiconductor device
09/04/2014US20140246752 Segmented guard ring structures with electrically insulated gap structures and design structures thereof
09/04/2014US20140246751 Integrated Circuit Using Deep Trench Through Silicon (DTS)
09/04/2014US20140246750 Semiconductor device and method for producing semiconductor device
09/04/2014US20140246736 High-K Film Apparatus and Method
09/04/2014US20140246735 Metal gate structure for semiconductor devices
09/04/2014US20140246734 Replacement metal gate with mulitiple titanium nitride laters
09/04/2014US20140246731 Voids in STI Regions for Forming Bulk FinFETs
09/04/2014US20140246728 Spacer elements for semiconductor device
09/04/2014US20140246726 Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices
09/04/2014US20140246723 Method for manufacturing a fin mos transistor
09/04/2014US20140246722 Power MOS Transistor with Improved Metal Contact
09/04/2014US20140246721 Semiconductor device
09/04/2014US20140246718 Semiconductor device and manufacturing method of the same
09/04/2014US20140246712 Integrated circuit metal gate structure having tapered profile
09/04/2014US20140246711 Semiconductor device, method of manufacturing the same, method of manufacturing display unit, and method of manufacturing electronic apparatus
09/04/2014US20140246710 Cyclic deposition etch chemical vapor deposition epitaxy to reduce epi abnormality
09/04/2014US20140246709 Semiconductor device having a spacer and a liner overlying a sidewall of a gate structure and method of forming the same
09/04/2014US20140246700 Nitride semiconductor device and method for manufacturing same
09/04/2014US20140246699 Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same
09/04/2014US20140246698 CHANNEL SiGe REMOVAL FROM PFET SOURCE/DRAIN REGION FOR IMPROVED SILICIDE FORMATION IN HKMG TECHNOLOGIES WITHOUT EMBEDDED SiGe
09/04/2014US20140246697 Semiconductor Device with Charge Compensation Structure
09/04/2014US20140246696 Transistor with embedded strain-inducing material formed in cavities formed in a silicon/germanium substrate
09/04/2014US20140246695 Isolation structure of semiconductor device
09/04/2014US20140246682 Semiconductor element
09/04/2014US20140246680 JFET Devices with Increased Barrier Height and Methods of Making Same
09/04/2014US20140246679 III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE
09/04/2014US20140246678 Display device and semiconductor device
09/04/2014US20140246676 Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region
09/04/2014US20140246674 Semiconductor device and method for manufacturing the same
09/04/2014US20140246673 Semiconductor device and method for manufacturing the same
09/04/2014US20140246671 Field Effect Transistor Devices
09/04/2014US20140246669 Semiconductor device and manufacturing method thereof
09/04/2014US20140246668 Semiconductor device and method for manufacturing the same
09/04/2014US20140246666 Semiconductor device and method for manufacturing the same
09/04/2014US20140246651 Grown nanofin transistors
09/04/2014US20140246650 Nanostructured device
09/04/2014DE19861495B3 Halbleitergeräte, Anzeigegerät und Vorrichtung Semiconductor devices, display device and device
09/04/2014DE112012005039T5 Halbleitervorrichtung Semiconductor device
09/04/2014DE112011106034T5 Verfahren zum Herstellen eines Halbleiterbauelementes A method of manufacturing a semiconductor device
09/04/2014DE112011105996T5 Halbleiterbauelement mit einem verengten Halbleiterkörper und Verfahren zum Ausbilden von Halbleiterkörpern variierender Breite A semiconductor device with a narrowed semiconductor body and method of forming semiconductor elements of varying width
09/04/2014DE112011105988T5 111-N-Materialstruktur für Gate-Aussparungstransistoren 111-N material structure for the gate recess transistors
09/04/2014DE112011105979T5 Halbleiterbauelement mit isolierten Gehäuseteilen Semiconductor component with insulated housing parts
09/04/2014DE10262345B4 Halbleiterbauelement mit einer Siliziumcarbidschicht mit vorbestimmtem Leitfähigkeitstyp Semiconductor device with a silicon carbide layer having a predetermined conductivity type
09/04/2014DE102014102467A1 Ladungsschutz für III-Nitrid-Vorrichtungen Overload protection for III-nitride devices
09/04/2014DE10196506B3 Herstellungsverfahren für einen Dünnfilmstrukturkörper Manufacturing method of a thin-film structure body
09/04/2014DE10162576B4 Ätzmittel und Verfahren zum Bilden eines Matrixsubstrats für Flüssigkristallanzeigevorrichtungen Etchant and method for forming a matrix substrate for liquid crystal display devices
09/03/2014EP2772943A1 Method for producing a microelectronic device and corresponding device
09/03/2014EP2772942A2 Capacitorless one transistor dram cell, integrated circuitry comprising an array of capacitorless one transistor dram cells, and method of forming lines of capacitorless one transistor dram cells
09/03/2014EP2772941A1 Method for manufacturing a finfet MOS transistor
09/03/2014EP2772940A2 Heterostructure Power Transistor with AlSiN Passivation Layer
09/03/2014EP2772071A1 Vented microphone module
09/03/2014EP2771277A1 Methods of enriching different species of carbon nanotubes
09/02/2014US8824994 Wireless communication system
09/02/2014US8824212 Thermally assisted flash memory with segmented word lines
09/02/2014US8824209 Non-volatile memory device having vertical structure and method of operating the same
09/02/2014US8824208 Non-volatile memory using pyramidal nanocrystals as electron storage elements
09/02/2014US8824177 Semiconductor device and snubber device having a SiC-MOSFET and a Zener diode
09/02/2014US8823893 Liquid crystal display device with transistor including oxide semiconductor layer and electronic device
09/02/2014US8823380 Capacitive charge pump
09/02/2014US8823182 Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant
09/02/2014US8823181 Stack semiconductor apparatus having a through silicon via and method of fabricating the same
09/02/2014US8823180 Package on package devices and methods of packaging semiconductor dies
09/02/2014US8823178 Bit cell with double patterned metal layer structures
09/02/2014US8823176 Discontinuous/non-uniform metal cap structure and process for interconnect integration
09/02/2014US8823174 Electronic device
09/02/2014US8823166 Pillar bumps and process for making same
09/02/2014US8823158 Semiconductor package and stacked semiconductor package having the same
09/02/2014US8823148 Diode with epitaxially grown semiconductor layers
09/02/2014US8823146 Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
09/02/2014US8823145 Multilayer board and light-emitting module having the same
09/02/2014US8823144 Semiconductor package with interface substrate having interposer
09/02/2014US8823142 GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)
09/02/2014US8823141 Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device
09/02/2014US8823140 GaN vertical bipolar transistor
09/02/2014US8823139 Low leakage diodes
09/02/2014US8823138 Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereof
09/02/2014US8823137 Semiconductor device
09/02/2014US8823135 Shielding structure for transmission lines
09/02/2014US8823132 Two-portion shallow-trench isolation
09/02/2014US8823131 Semiconductor devices having a trench isolation layer and methods of fabricating the same
09/02/2014US8823130 Silicon epitaxial wafer, method for manufacturing the same, bonded SOI wafer and method for manufacturing the same
09/02/2014US8823129 Latch-up prevention structure and method for ultra-small high voltage tolerant cell
09/02/2014US8823127 Multijunction photovoltaic cell fabrication
09/02/2014US8823120 Magnetic element with storage layer materials
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