Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2014
09/11/2014US20140252535 Integrated Passive Device Having Improved Linearity and Isolation
09/11/2014US20140252534 Method of making deep trench, and devices formed by the method
09/11/2014US20140252533 Insulating structure, a method of forming an insulating structure, and a chip scale isolator including such an insulating structure
09/11/2014US20140252532 Semiconductor device and method for fabricating the same
09/11/2014US20140252518 High Moment Wrap-Around Shields for Magnetic Read Head Improvements
09/11/2014US20140252504 Method for Fabricating a Semiconductor Device
09/11/2014US20140252502 Multilayer dielectric structures for semiconductor nano-devices
09/11/2014US20140252501 Sacrificial replacement extension layer to obtain abrupt doping profile
09/11/2014US20140252500 Sacrificial replacement extension layer to obtain abrupt doping profile
09/11/2014US20140252499 Metal-Oxide-Semiconductor Field-Effect Transistor with Extended Gate Dielectric Layer
09/11/2014US20140252498 Method for fabricating a field effect transistor, and field effect transistor
09/11/2014US20140252495 Method of forming a cmos structure having gate insulation films of different thicknesses
09/11/2014US20140252493 Gate stack including a high-k gate dielectric that is optimized for low voltage applications
09/11/2014US20140252492 Gate stack including a high-k gate dielectric that is optimized for low voltage applications
09/11/2014US20140252489 FinFET with Rounded Source/Drain Profile
09/11/2014US20140252488 Channel Epitaxial Regrowth Flow (CRF)
09/11/2014US20140252486 Fin Shape For Fin Field-Effect Transistors And Method Of Forming
09/11/2014US20140252482 Finfet transistor structure and method for making the same
09/11/2014US20140252481 Transistor including a gate electrode extending all around one or more channel regions
09/11/2014US20140252480 Combination finfet and planar fet semiconductor device and methods of making such a device
09/11/2014US20140252479 Semiconductor fin isolation by a well trapping fin portion
09/11/2014US20140252478 FinFET with Channel Backside Passivation Layer Device and Method
09/11/2014US20140252477 FinFET with an Asymmetric Source/Drain Structure and Method of Making Same
09/11/2014US20140252475 FinFETs and Methods for Forming the Same
09/11/2014US20140252474 Method of forming finfet having fins of different height
09/11/2014US20140252473 Electronic Device Including a Vertical Conductive Structure and a Process of Forming the Same
09/11/2014US20140252472 Semiconductor device with increased safe operating area
09/11/2014US20140252469 FinFETs with Strained Well Regions
09/11/2014US20140252468 Engineered Source/Drain Region for N-Type MOSFET
09/11/2014US20140252467 Laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers
09/11/2014US20140252466 Electronic Device Including a Conductive Electrode and a Process of Forming the Same
09/11/2014US20140252465 Semiconductor device and method of producing the same
09/11/2014US20140252464 Method of forming stacked trench contacts and structures formed thereby
09/11/2014US20140252463 Schottky and mosfet+schottky structures, devices, and methods
09/11/2014US20140252462 Semiconductor device and method for fabricating the same
09/11/2014US20140252461 Semiconductor device and method for fabricating the same
09/11/2014US20140252460 High Density MOSFET Array with Self-Aligned Contacts Delimited by Nitride-Capped Trench Gate Stacks and Method
09/11/2014US20140252459 Method for fabricating semiconductor device
09/11/2014US20140252458 Semiconductor device having vertical channel transistor and method for fabricating the same
09/11/2014US20140252457 Multi-landing contact etching
09/11/2014US20140252456 Semiconductor device and its manufacturing method
09/11/2014US20140252455 Structure And Method For Static Random Access Memory Device Of Vertical Tunneling Field Effect Transistor
09/11/2014US20140252453 Nonvolatile semiconductor memory device and manufacturing method thereof
09/11/2014US20140252451 Memory device comprising electrically floating body transistor
09/11/2014US20140252449 Semiconductor devices comprising floating gate transistors and methods of forming such semiconductor devices
09/11/2014US20140252448 Extremely thin semiconductor on insulator (etsoi) logic and memory hybrid chip
09/11/2014US20140252447 Nanodot-Enhanced Hybrid Floating Gate for Non-Volatile Memory Devices
09/11/2014US20140252446 Extremely thin semiconductor on insulator (etsoi) logic and memory hybrid chip
09/11/2014US20140252445 Method of forming split-gate cell for non-volative memory devices
09/11/2014US20140252443 Nonvolatile semiconductor memory device
09/11/2014US20140252436 Semiconductor device
09/11/2014US20140252434 Semiconductor device and method of manufacturing the same
09/11/2014US20140252433 Multi-Layer Metal Contacts
09/11/2014US20140252432 Semiconductor Device and Method for Forming the Same
09/11/2014US20140252431 Semiconductor Device Structure and Method of Forming Same
09/11/2014US20140252430 Electronic Device Including a Dielectric Layer Having a Non-Uniform Thickness and a Process of Forming The Same
09/11/2014US20140252429 Contact geometry having a gate silicon length decoupled from a transistor length
09/11/2014US20140252428 Semiconductor Fin Structures and Methods for Forming the Same
09/11/2014US20140252427 Self-aligned Contacts For Replacement Metal Gate Transistors
09/11/2014US20140252426 Semiconductor Structure with Dielectric-Sealed Doped Region
09/11/2014US20140252425 Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
09/11/2014US20140252424 Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
09/11/2014US20140252423 Semiconductor device having metal gate and manufacturing method thereof
09/11/2014US20140252417 Semiconductor device and electronic apparatus
09/11/2014US20140252416 Field effect transitor and semiconductor device using the same
09/11/2014US20140252415 High mobility, thin film transistors using semiconductor/insulator transition-metaldichalcogenide based interfaces
09/11/2014US20140252414 Passivated III-V or Ge Fin-Shaped Field Effect Transistor
09/11/2014US20140252413 Silicon-germanium fins and silicon fins on a bulk substrate
09/11/2014US20140252412 Strained and Uniform Doping Technique for FINFETs
09/11/2014US20140252410 Module and Assembly with Dual DC-Links for Three-Level NPC Applications
09/11/2014US20140252408 Reverse conducting igbt
09/11/2014US20140252407 Tunnel effect transistor
09/11/2014US20140252396 Highly efficient gallium nitride based light emitting diodes via surface roughening
09/11/2014US20140252378 Semiconductor substrate and semiconductor device
09/11/2014US20140252377 Semiconductor device and method of manufacturing thereof
09/11/2014US20140252376 Silicon carbide substrate, method for manufacturing same and method for manufacturing silicon carbide semiconductor device
09/11/2014US20140252375 Delamination and Crack Prevention in III-Nitride Wafers
09/11/2014US20140252374 Silicon carbide semiconductor device
09/11/2014US20140252373 Semiconductor Device and Method for Producing the Same
09/11/2014US20140252372 Vertical gallium nitride schottky diode
09/11/2014US20140252371 Heterojunction transistor and method of fabricating the same
09/11/2014US20140252370 Nitride semiconductor device and method of manufacturing the same
09/11/2014US20140252369 Nitride-based semiconductor device
09/11/2014US20140252368 High-electron-mobility transistor
09/11/2014US20140252366 Semiconductor Structure Including Buffer With Strain Compensation Layers
09/11/2014US20140252362 Thin film apparatus
09/11/2014US20140252360 Semiconductor device and manufacturing method of the same
09/11/2014US20140252359 Semiconductor Device and Method of Making
09/11/2014US20140252355 Semiconductor device and method for producing same
09/11/2014US20140252354 Sputtering target
09/11/2014US20140252353 Field-Effect Transistor, and Memory and Semiconductor Circuit Including the Same
09/11/2014US20140252351 Semiconductor device and method for manufacturing the same
09/11/2014US20140252350 Thin film transistor and method of manufacturing the same
09/11/2014US20140252349 Thin film transistor
09/11/2014US20140252348 Semiconductor device and method for manufacturing the same
09/11/2014US20140252347 Semiconductor device
09/11/2014US20140252346 Semiconductor device
09/11/2014US20140252344 P-type oxide composition, and method for producing p-type oxide composition
09/11/2014US20140252316 Quantum dots, rods, wires, sheets, and ribbons, and uses thereof
09/11/2014US20140252312 Tunnel Diodes Incorporating Strain-Balanced, Quantum-Confined Heterostructures
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