Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2014
09/18/2014US20140264490 Replacement gate electrode with a self-aligned dielectric spacer
09/18/2014US20140264489 Wrap around stressor formation
09/18/2014US20140264488 Methods of forming low defect replacement fins for a finfet semiconductor device and the resulting devices
09/18/2014US20140264487 Methods of forming a semiconductor device with a protected gate cap layer and the resulting device
09/18/2014US20140264486 Methods of forming a semiconductor device with a protected gate cap layer and the resulting device
09/18/2014US20140264485 Fin-type semiconductor device
09/18/2014US20140264484 Fluorine-doped channel silicon-germanium layer
09/18/2014US20140264483 Metal gate structures for field effect transistors and method of fabrication
09/18/2014US20140264482 Carbon-doped cap for a raised active semiconductor region
09/18/2014US20140264480 Semiconductor device and method of forming the same
09/18/2014US20140264479 Methods of increasing space for contact elements by using a sacrificial liner and the resulting device
09/18/2014US20140264478 Interface for metal gate integration
09/18/2014US20140264477 Vjfet devices
09/18/2014US20140264476 Junction fet semiconductor device with dummy mask structures for improved dimension control and method for forming the same
09/18/2014US20140264473 Sensor with field effect transistor and method of fabricating this transistor
09/18/2014US20140264465 Chemical sensors with partially extended sensor surfaces
09/18/2014US20140264459 High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices
09/18/2014US20140264458 Heterojunction Bipolar Transistor having a Germanium Extrinsic Base Utilizing a Sacrificial Emitter Post
09/18/2014US20140264457 Heterojunction Bipolar Transistor having a Germanium Raised Extrinsic Base
09/18/2014US20140264456 Method of forming a high electron mobility semiconductor device
09/18/2014US20140264455 Carbon doping semiconductor devices
09/18/2014US20140264454 Ohmic contact structure for semiconductor device and method
09/18/2014US20140264453 Method of forming a high electron mobility semiconductor device and structure therefor
09/18/2014US20140264451 Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
09/18/2014US20140264450 Semiconductor device and manufcturing method thereof
09/18/2014US20140264449 Method of forming hemt semiconductor devices and structure therefor
09/18/2014US20140264448 Method of forming a gate contact
09/18/2014US20140264447 Apparatuses and methods comprising a channel region having different minority carrier lifetimes
09/18/2014US20140264446 Iii-v finfets on silicon substrate
09/18/2014US20140264445 Source/drain structure of semiconductor device
09/18/2014US20140264444 Stress-enhancing selective epitaxial deposition of embedded source and drain regions
09/18/2014US20140264443 SIGE Surface Passivation by Germanium Cap
09/18/2014US20140264442 Method for Fabricating a Semiconductor Device
09/18/2014US20140264441 Semiconductor device
09/18/2014US20140264440 V-shaped sige recess volume trim for improved device performance and layout dependence
09/18/2014US20140264439 Semiconductor structure
09/18/2014US20140264438 Heterostructures for Semiconductor Devices and Methods of Forming the Same
09/18/2014US20140264434 Monolithic ignition insulated-gate bipolar transistor
09/18/2014US20140264433 Dual-gate trench igbt with buried floating p-type shield
09/18/2014US20140264432 Semiconductor Device
09/18/2014US20140264431 Enhancement-mode iii-nitride devices
09/18/2014US20140264408 Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
09/18/2014US20140264391 Semiconductor device and manufacturing method thereof
09/18/2014US20140264387 Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials
09/18/2014US20140264386 Performance enhancement in pmos and nmos transistors on the basis of silicon/carbon material
09/18/2014US20140264385 Manufacture of wafers of wide energy gap semiconductor material for the integration of electronic and/or optical and/or optoelectronic devices
09/18/2014US20140264384 SiC SUBSTRATE WITH SiC EPITAXIAL FILM
09/18/2014US20140264383 Semiconductor device and manufacturing method of the same
09/18/2014US20140264382 Silicon carbide semiconductor devices
09/18/2014US20140264381 Semiconductor device with self-aligned ohmic contacts
09/18/2014US20140264380 Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material
09/18/2014US20140264379 III-Nitride P-Channel Field Effect Transistor with Hole Carriers in the Channel
09/18/2014US20140264378 Semiconductor structure
09/18/2014US20140264376 Power Switching Module with Reduced Oscillation and Method for Manufacturing a Power Switching Module Circuit
09/18/2014US20140264375 Lattice mismatched heterojunction structures and devices made therefrom
09/18/2014US20140264374 Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
09/18/2014US20140264373 III-Nitride Heterojunction Device
09/18/2014US20140264372 Structure and manufacturing method of the structure, and gallium nitride-based semiconductor light-emitting device using the structure and manufacturing method of the device
09/18/2014US20140264371 Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
09/18/2014US20140264370 Carbon doping semiconductor devices
09/18/2014US20140264369 High electron mobility semiconductor device and method therefor
09/18/2014US20140264368 Semiconductor Wafer and a Process of Forming the Same
09/18/2014US20140264367 HEMT Semiconductor Device and a Process of Forming the Same
09/18/2014US20140264366 Semiconductor apparatus and method of manufacturing the same
09/18/2014US20140264365 Rectifier Structures with Low Leakage
09/18/2014US20140264364 Semiconductor device
09/18/2014US20140264363 Oxygen Controlled PVD Aluminum Nitride Buffer for Gallium Nitride-Based Optoelectronic and Electronic Devices
09/18/2014US20140264362 Method and Apparatus for Forming a CMOS Device
09/18/2014US20140264361 Iii-nitride transistor with engineered substrate
09/18/2014US20140264360 Transistor with charge enhanced field plate structure and method
09/18/2014US20140264354 Buffer layers for metal oxide semiconductors for tft
09/18/2014US20140264352 Mask layer and method of formation
09/18/2014US20140264351 Peeling Method and Method of Manufacturing Semiconductor Device
09/18/2014US20140264350 Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel
09/18/2014US20140264349 Low thermal budget schemes in semiconductor device fabrication
09/18/2014US20140264348 Asymmetric Cyclic Desposition Etch Epitaxy
09/18/2014US20140264347 Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment
09/18/2014US20140264345 Wafer warpage reduction
09/18/2014US20140264344 Wafers, Panels, Semiconductor Devices, and Glass Treatment Methods
09/18/2014US20140264343 Device architecture and method for temperature compensation of vertical field effect devices
09/18/2014US20140264341 Bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance
09/18/2014US20140264329 Display device
09/18/2014US20140264328 Semiconductor element
09/18/2014US20140264327 Semiconductor device and manufacturing method thereof
09/18/2014US20140264326 Field effect transistor
09/18/2014US20140264325 Double Sided Sl(GE)/Sapphire/lll-Nitride Hybrid Structure
09/18/2014US20140264324 Semiconductor device
09/18/2014US20140264323 Semiconductor device and manufacturing method thereof
09/18/2014US20140264319 Low temperature, thin film crystallization method and products prepared therefrom
09/18/2014US20140264312 Novel organic compound and organic light-emitting device
09/18/2014US20140264289 Structure and Method for Vertical Tunneling Field Effect Transistor with Leveled Source and Drain
09/18/2014US20140264286 Suspended superconducting qubits
09/18/2014US20140264282 Heterogeneous layered structure, method of preparing the heterogeneous layered structure, and electronic device including the heterogeneous layered structure
09/18/2014US20140264281 Channel-Last Methods for Making FETS
09/18/2014US20140264280 Nanowire transistor with underlayer etch stops
09/18/2014US20140264279 Faceted semiconductor nanowire
09/18/2014US20140264278 Strained InGaAs Quantum Wells for Complementary Transistors
09/18/2014US20140264277 Intra-Band Tunnel FET
09/18/2014US20140264276 Non-replacement gate nanomesh field effect transistor with pad regions
09/18/2014US20140264274 Semiconductor device
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