Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2014
09/18/2014US20140264273 Superlattice crenelated gate field effect transistor
09/18/2014US20140264272 Semiconductor Diodes Fabricated by Aspect Ratio Trapping with Coalesced Films
09/18/2014US20140264271 Ferroelectric memory device
09/18/2014US20140264259 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
09/18/2014US20140264258 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
09/18/2014US20140264255 Method for Making a Sensor Device Using a Graphene Layer
09/18/2014US20140264253 Leakage reduction structures for nanowire transistors
09/18/2014US20140264252 Current Selector for Non-Volatile Memory in a Cross Bar Array Based on Defect and Band Engineering Metal-Dielectric-Metal Stacks
09/18/2014US20140264222 Resistive Switching Random Access Memory with Asymmetric Source and Drain
09/18/2014DE112011106049T5 Variable Gatebreite für Gate-All-Around-Transistoren Variable gate width of gate-all-around-transistors
09/18/2014DE112011105926T5 Belastungskompensation in Transistoren Strain compensation in transistors
09/18/2014DE112011105751T5 Antifuse-Element unter Verwendung von nicht-planarer Topologie Antifuse element using non-planar topology
09/18/2014DE102014203801A1 HK/MG-Prozessflüsse für p-Typ Halbleitervorrichtungen HK / MG process flows for p-type semiconductor devices
09/18/2014DE102014203524A1 Verfahren zum Ausbilden von defektarmen Ersatzflossen für ein FinFET-Halbleiterbauelement sowie daraus resultierende Bauelemente A method of forming low-defect replacement fins for a FinFET semiconductor device and the resulting components
09/18/2014DE102014202684A1 Fluor-dotierte Kanalsilizium-Germanium-Schicht Fluorine-doped silicon-germanium channel layer
09/18/2014DE102014103561A1 Einstellbares transistorbauelement Adjustable transistor-device
09/18/2014DE102014103518A1 Ein verfahren zum herstellen eines siliziumkarbidsubstrats für eine elektrische siliziumkarbidvorrichtung, ein siliziumkarbidsubstrat und eine elektrische siliziumkarbidvorrichtung A method for producing a silicon carbide substrate for electrical siliziumkarbidvorrichtung, a silicon carbide substrate and an electrical siliziumkarbidvorrichtung
09/18/2014DE102014103500A1 Treiber mit Verarmungs-Mosfet Drivers with depletion MOSFET
09/18/2014DE102014103325A1 Leistungsschaltmodul mit verringerter Oszillation und Verfahren zur Herstellung einer Leistungsschaltmodulschaltung Power switching module with a reduced oscillation and method for manufacturing a power switching circuit module
09/18/2014DE102014103264A1 Integrierte Schaltungsstruktur und Verfahren zum Schutz gegen Beschädigungen des Gatedielektrikums Integrated circuit structure and procedures to protect against damage of the gate dielectric
09/18/2014DE102014103049A1 Halbleitervorrichtung Semiconductor device
09/18/2014DE102014004235A1 Feldeffekttransistor Field-effect transistor
09/18/2014DE102013204614A1 Verfahren zum Bilden von einer Gateelektrode einer Halbleitervorrichtung, Gateelektrodenstruktur für eine Halbleitervorrichtung und entsprechende Halbleitervorrichtungsstruktur A method of forming a gate electrode of a semiconductor device, the gate electrode structure for a semiconductor device and semiconductor device structure corresponding
09/18/2014DE102013204234A1 Sensor und Verfahren zum Herstellen einer Lötverbindung zwischen einem Sensor und einer Leiterplatte Sensor and method for forming a solder connection between a sensor and a printed circuit board
09/18/2014DE102013105735A1 FinFET mit SiGe-Unterschicht in der Source und dem Drain FinFET with SiGe sublayer in the source and drain
09/18/2014DE102013105705A1 Halbleitervorrichtung und dessen Herstellung A semiconductor device and its manufacturing
09/18/2014DE102004021054B4 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
09/17/2014EP2779412A1 Energy harvesting device
09/17/2014EP2779249A1 Thin film transistor array substrate
09/17/2014EP2779248A2 Apparatus related to termination regions of a semiconductor device
09/17/2014EP2779247A2 High electron mobility semiconductor device and manufacturing method therefor
09/17/2014EP2779246A2 Method of forming a high electron mobility semiconductor device and structure therefor
09/17/2014EP2779245A2 Hemt semiconductor device and a process of forming the same
09/17/2014EP2779244A2 Method of forming a HEMT semiconductor device and structure therefor
09/17/2014EP2779243A1 Power semiconductor device and corresponding module
09/17/2014EP2779242A1 Schottky barrier diode
09/17/2014EP2779241A1 Bipolar transistor with lowered 1/F noise
09/17/2014EP2779225A1 Semiconductor device
09/17/2014EP2779218A2 Method of forming hemt semiconductor devices and structure therefor
09/17/2014EP2778124A1 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
09/17/2014EP2778123A1 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
09/17/2014EP2778122A1 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
09/16/2014US8837227 Non-volatile semiconductor device, and method of operating the same
09/16/2014US8837225 Nonvolatile semiconductor memory device and operation method of the same
09/16/2014US8837223 Nonvolatile semiconductor memory device and method for manufacuring the same
09/16/2014US8837219 Method of programming nonvolatile memory
09/16/2014US8837110 Graphene mounted on aerogel
09/16/2014US8836892 Backlight assembly, liquid crystal display having the backlight assembly and method of manufacturing the liquid crystal display
09/16/2014US8836877 Display substrate, display device, and method of manufacturing the display substrate
09/16/2014US8836555 Circuit, sensor circuit, and semiconductor device using the sensor circuit
09/16/2014US8836438 Oscillator element and method for producing the oscillator element
09/16/2014US8836429 CMOS integrated circuit and amplifying circuit
09/16/2014US8836351 Chloride detection
09/16/2014US8836150 Semiconductor device
09/16/2014US8836149 Hybrid substrates, semiconductor packages including the same and methods for fabricating semiconductor packages
09/16/2014US8836148 Interposer for stacked semiconductor devices
09/16/2014US8836145 Power semiconductor device with reduced contact resistance
09/16/2014US8836144 Wafer level package structure
09/16/2014US8836138 Wiring substrate and semiconductor package
09/16/2014US8836131 Semiconductor module with edge termination and process for its fabrication
09/16/2014US8836130 Light emitting semiconductor element bonded to a base by a silver coating
09/16/2014US8836129 Plug structure
09/16/2014US8836126 Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese
09/16/2014US8836124 Fuse and integrated conductor
09/16/2014US8836123 Methods for discretized formation of masking and capping layers on a substrate
09/16/2014US8836116 Wafer level packaging of micro-electro-mechanical systems (MEMS) and complementary metal-oxide-semiconductor (CMOS) substrates
09/16/2014US8836113 Electronic module
09/16/2014US8836090 Fast recovery switching diode with carrier storage area
09/16/2014US8836087 Gap-fill keyhole repair using printable dielectric material
09/16/2014US8836083 Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices
09/16/2014US8836082 Reversal lithography approach by selective deposition of nanoparticles
09/16/2014US8836081 Semiconductor structures, devices and engineered substrates including layers of semiconductor material having reduced lattice strain
09/16/2014US8836074 Semiconductor memory device
09/16/2014US8836073 Semiconductor device and structure
09/16/2014US8836072 Semiconductor system including a schottky diode
09/16/2014US8836071 Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer
09/16/2014US8836063 Integrated passive component
09/16/2014US8836061 Magnetic tunnel junction with non-metallic layer adjacent to free layer
09/16/2014US8836060 Spin device, driving method of the same, and production method of the same
09/16/2014US8836059 Shape enhanced pin read head magnetic transducer with stripe height defined first and method of making same
09/16/2014US8836058 Electrostatic control of magnetic devices
09/16/2014US8836057 Magnetoresistive elements having protrusion from free layer and memory devices including the same
09/16/2014US8836056 Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
09/16/2014US8836053 Hybrid integrated component and method for the manufacture thereof
09/16/2014US8836051 Method for producing semiconductor device and semiconductor device
09/16/2014US8836050 Structure and method to fabricate a body contact
09/16/2014US8836049 Semiconductor structure and process thereof
09/16/2014US8836046 Semiconductor devices including protruding insulation portions between active fins
09/16/2014US8836043 Lateral bipolar junction transistor
09/16/2014US8836042 Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel
09/16/2014US8836041 Dual EPI CMOS integration for planar substrates
09/16/2014US8836040 Shared-diffusion standard cell architecture
09/16/2014US8836039 Semiconductor device including high-k/metal gate electrode
09/16/2014US8836038 CMOS dual metal gate semiconductor device
09/16/2014US8836037 Structure and method to form input/output devices
09/16/2014US8836036 Method for fabricating semiconductor devices using stress engineering
09/16/2014US8836035 Method and apparatus for reducing gate resistance
09/16/2014US8836032 Fin-based adjustable resistor
09/16/2014US8836031 Electrical isolation structures for ultra-thin semiconductor-on-insulator devices
09/16/2014US8836030 Methods of forming memory cells, memory cells, and semiconductor devices
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